KR102911060B1 - 승화 sic 기판 상의 탄소 버퍼를 사용하는 에피택셜 성장 템플릿 - Google Patents

승화 sic 기판 상의 탄소 버퍼를 사용하는 에피택셜 성장 템플릿

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Publication number
KR102911060B1
KR102911060B1 KR1020217014717A KR20217014717A KR102911060B1 KR 102911060 B1 KR102911060 B1 KR 102911060B1 KR 1020217014717 A KR1020217014717 A KR 1020217014717A KR 20217014717 A KR20217014717 A KR 20217014717A KR 102911060 B1 KR102911060 B1 KR 102911060B1
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layer
substrate
carbon buffer
buffer layer
epitaxial layer
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Korean (ko)
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KR20210080440A (ko
Inventor
지환 김
웨이 공
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메사추세츠 인스티튜트 오브 테크놀로지
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
    • B32B2310/0409—Treatment by energy or chemical effects using liquids, gas or steam using liquids
    • B32B2310/0427—Liquified gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2313/00—Elements other than metals
    • B32B2313/04—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020217014717A 2018-10-16 2019-10-16 승화 sic 기판 상의 탄소 버퍼를 사용하는 에피택셜 성장 템플릿 Active KR102911060B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862746072P 2018-10-16 2018-10-16
US62/746,072 2018-10-16
PCT/US2019/056428 WO2020081623A1 (en) 2018-10-16 2019-10-16 Epitaxial growth template using carbon buffer on sublimated sic substrate

Publications (2)

Publication Number Publication Date
KR20210080440A KR20210080440A (ko) 2021-06-30
KR102911060B1 true KR102911060B1 (ko) 2026-01-12

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Country Status (6)

Country Link
US (1) US12308227B2 (https=)
EP (1) EP3867064A4 (https=)
JP (2) JP7689371B2 (https=)
KR (1) KR102911060B1 (https=)
CN (1) CN112839813A (https=)
WO (1) WO2020081623A1 (https=)

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KR102750647B1 (ko) * 2022-02-10 2025-01-06 아주대학교산학협력단 층수가 제어된 2차원 물질의 제조 방법
US20240047203A1 (en) * 2022-08-04 2024-02-08 Future Semiconductor Business, Inc Monolithic remote epitaxy of compound semi conductors and 2d materials
KR20250150609A (ko) * 2023-03-27 2025-10-20 미쓰비시덴키 가부시키가이샤 반도체 디바이스의 제조 방법 및 접합 웨이퍼
WO2025062658A1 (ja) * 2023-09-22 2025-03-27 日本碍子株式会社 半導体ウエハ、半導体ウエハ製造方法
WO2025135578A1 (ko) * 2023-12-19 2025-06-26 주식회사 엘엑스세미콘 전력반도체 제조용 반도체 기판과 이의 제조방법 및 이를 이용한 전력반도체 소자의 제조방법
KR102892761B1 (ko) * 2024-02-05 2025-11-27 성균관대학교산학협력단 결정 및 준결정 접합 구조체, 및 그 제조 방법

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US20140342127A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
US20150084074A1 (en) 2013-09-26 2015-03-26 International Business Machines Corporation Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
US20160197146A1 (en) 2013-09-23 2016-07-07 Quantum Semiconductor Llc Superlattice materials and applications

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US20120141799A1 (en) 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
JPWO2012099209A1 (ja) * 2011-01-21 2014-06-30 株式会社ブリヂストン 炭化ケイ素単結晶基板及び半導体素子の製造方法
CN103378223B (zh) * 2012-04-25 2016-07-06 清华大学 外延结构体的制备方法
CN103779396B (zh) * 2012-10-22 2016-10-19 清华大学 石墨烯基复合结构及其制备方法
CN103117317B (zh) * 2013-01-31 2015-08-19 电子科技大学 一种硅面SiC衬底上的石墨烯光电器件及其制备方法
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CN101931035A (zh) 2009-06-23 2010-12-29 日本冲信息株式会社 氮化物半导体层分离方法、半导体器件和晶片及制造方法
US20140342127A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
US20160197146A1 (en) 2013-09-23 2016-07-07 Quantum Semiconductor Llc Superlattice materials and applications
US20150084074A1 (en) 2013-09-26 2015-03-26 International Business Machines Corporation Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Also Published As

Publication number Publication date
CN112839813A (zh) 2021-05-25
JP7689371B2 (ja) 2025-06-06
EP3867064A1 (en) 2021-08-25
JP2022504927A (ja) 2022-01-13
WO2020081623A1 (en) 2020-04-23
JP2025074197A (ja) 2025-05-13
EP3867064A4 (en) 2022-07-13
US20210351033A1 (en) 2021-11-11
KR20210080440A (ko) 2021-06-30
US12308227B2 (en) 2025-05-20

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