JP7689371B2 - 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート - Google Patents

昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート Download PDF

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JP7689371B2
JP7689371B2 JP2021520542A JP2021520542A JP7689371B2 JP 7689371 B2 JP7689371 B2 JP 7689371B2 JP 2021520542 A JP2021520542 A JP 2021520542A JP 2021520542 A JP2021520542 A JP 2021520542A JP 7689371 B2 JP7689371 B2 JP 7689371B2
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layer
substrate
carbon buffer
buffer layer
epitaxial layer
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JP2022504927A (ja
JP2022504927A5 (https=
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ジファン キム，
ウェイ コン，
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Massachusetts Institute of Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
    • B32B2310/0409—Treatment by energy or chemical effects using liquids, gas or steam using liquids
    • B32B2310/0427—Liquified gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2313/00—Elements other than metals
    • B32B2313/04—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021520542A 2018-10-16 2019-10-16 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート Active JP7689371B2 (ja)

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JP2025031453A JP2025074197A (ja) 2018-10-16 2025-02-28 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862746072P 2018-10-16 2018-10-16
US62/746,072 2018-10-16
PCT/US2019/056428 WO2020081623A1 (en) 2018-10-16 2019-10-16 Epitaxial growth template using carbon buffer on sublimated sic substrate

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JP2025031453A Division JP2025074197A (ja) 2018-10-16 2025-02-28 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート

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JP2022504927A JP2022504927A (ja) 2022-01-13
JP2022504927A5 JP2022504927A5 (https=) 2022-11-09
JP7689371B2 true JP7689371B2 (ja) 2025-06-06

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JP2021520542A Active JP7689371B2 (ja) 2018-10-16 2019-10-16 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート
JP2025031453A Pending JP2025074197A (ja) 2018-10-16 2025-02-28 昇華させられたｓｉｃ基板上のカーボンバッファを用いたエピタキシャル成長テンプレート

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US (1) US12308227B2 (https=)
EP (1) EP3867064A4 (https=)
JP (2) JP7689371B2 (https=)
KR (1) KR102911060B1 (https=)
CN (1) CN112839813A (https=)
WO (1) WO2020081623A1 (https=)

Families Citing this family (6)

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KR102750647B1 (ko) * 2022-02-10 2025-01-06 아주대학교산학협력단 층수가 제어된 2차원 물질의 제조 방법
US20240047203A1 (en) * 2022-08-04 2024-02-08 Future Semiconductor Business, Inc Monolithic remote epitaxy of compound semi conductors and 2d materials
KR20250150609A (ko) * 2023-03-27 2025-10-20 미쓰비시덴키 가부시키가이샤 반도체 디바이스의 제조 방법 및 접합 웨이퍼
WO2025062658A1 (ja) * 2023-09-22 2025-03-27 日本碍子株式会社 半導体ウエハ、半導体ウエハ製造方法
WO2025135578A1 (ko) * 2023-12-19 2025-06-26 주식회사 엘엑스세미콘 전력반도체 제조용 반도체 기판과 이의 제조방법 및 이를 이용한 전력반도체 소자의 제조방법
KR102892761B1 (ko) * 2024-02-05 2025-11-27 성균관대학교산학협력단 결정 및 준결정 접합 구조체, 및 그 제조 방법

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WO2017044577A1 (en) 2015-09-08 2017-03-16 Massachusetts Institute Of Technology Systems and methods for graphene based layer transfer

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JPWO2012099209A1 (ja) * 2011-01-21 2014-06-30 株式会社ブリヂストン 炭化ケイ素単結晶基板及び半導体素子の製造方法
CN103378223B (zh) * 2012-04-25 2016-07-06 清华大学 外延结构体的制备方法
CN103779396B (zh) * 2012-10-22 2016-10-19 清华大学 石墨烯基复合结构及其制备方法
CN103117317B (zh) * 2013-01-31 2015-08-19 电子科技大学 一种硅面SiC衬底上的石墨烯光电器件及其制备方法
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JP6041346B2 (ja) * 2013-02-06 2016-12-07 国立大学法人名古屋大学 グラフェン／ＳｉＣ複合材料の製造方法及びそれにより得られるグラフェン／ＳｉＣ複合材料
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US20140342127A1 (en) 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
WO2017044577A1 (en) 2015-09-08 2017-03-16 Massachusetts Institute Of Technology Systems and methods for graphene based layer transfer
JP2018535536A (ja) 2015-09-08 2018-11-29 マサチューセッツ インスティテュート オブ テクノロジー グラフェンベースの層転写のためのシステム及び方法

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Publication number Publication date
CN112839813A (zh) 2021-05-25
EP3867064A1 (en) 2021-08-25
JP2022504927A (ja) 2022-01-13
WO2020081623A1 (en) 2020-04-23
KR102911060B1 (ko) 2026-01-12
JP2025074197A (ja) 2025-05-13
EP3867064A4 (en) 2022-07-13
US20210351033A1 (en) 2021-11-11
KR20210080440A (ko) 2021-06-30
US12308227B2 (en) 2025-05-20

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