JP2022177058A - 小型光源を有する波長変換発光デバイス - Google Patents
小型光源を有する波長変換発光デバイス Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
Description
Claims (18)
- 発光構造体であって:
半導体発光デバイスと;
前記半導体発光デバイスに付着された平坦な波長変換素子であり、前記半導体発光デバイスに面する該波長変換素子の底部表面の面積が、前記半導体発光デバイスの頂部表面の面積よりも大きく、
前記底部表面から上方へ延びる第1側端部を有する波長変換層;及び
透明層であり、該透明層に前記波長変換層が形成され、前記波長変換素子の上方表面から延びる第2側端部を有する透明層;
を含む波長変換素子と;
前記半導体発光デバイスの側部、前記第1側端部及び前記半導体発光デバイスの前記頂部表面を越えて延在する前記底部表面の一部に接触する反射体と;
を含む発光構造体。 - 請求項1に記載の発光構造体であり、前記波長変換素子の面積が前記半導体発光デバイスの前記頂部表面の面積の150%以下である、発光構造体。
- 請求項1に記載の発光構造体であり、前記透明層がガラスであり、前記波長変換層が透明材料と混合され前記ガラスの上に積層された蛍光体である、発光構造体。
- 請求項1に記載の発光構造体であり、前記波長変換素子が前記半導体発光デバイスの端部を越えて延びる長さが30μm以下である、発光構造体。
- 請求項1に記載の発光構造体であり、前記半導体発光デバイスが、成長基板上に配置された半導体構造物を含み、前記波長変換素子が前記成長基板に取り付けられ、前記反射体が前記成長基板の側部に接触する、発光構造体。
- 請求項1に記載の発光構造体であり、前記反射体が透明材料中に配置された粒子を含む、発光構造体。
- 発光構造体であって:
半導体発光デバイスと;
前記半導体発光デバイスに付着された平坦な波長変換素子であり、前記半導体発光デバイスに面する該波長変換素子の底部表面の面積が、前記半導体発光デバイスの頂部表面の面積よりも大きく、
前記底部表面から上方へ延びる第1側端部を有する波長変換層;及び
透明層であり、該透明層に前記波長変換層が形成され、頂部表面及び該頂部表面から延び前記波長変換層の第1側端部に揃う第2側端部を有する透明層;
を含む波長変換素子と;
前記半導体発光デバイスの側部、前記第1側端部及び前記半導体発光デバイスの前記頂部表面を越えて延在する前記底部表面の一部に接触する反射体であり、該反射体の頂部が前記波長変換素子の上方にある、反射体と;
を含む発光構造体。 - 請求項7に記載の発光構造体であり、前記波長変換素子の面積が前記半導体発光デバイスの前記頂部表面の面積の150%以下である、発光構造体。
- 請求項7に記載の発光構造体であり、前記透明層がガラスであり、前記波長変換層が透明材料と混合され前記ガラスの上に積層された蛍光体である、発光構造体。
- 請求項7に記載の発光構造体であり、前記波長変換素子が前記半導体発光デバイスの端部を越えて延びる長さが30μm以下である、発光構造体。
- 請求項7に記載の発光構造体であり、前記半導体発光デバイスが、成長基板上に配置された半導体構造物を含み、前記波長変換素子が前記成長基板に取り付けられ、前記反射体が前記成長基板の側部に接触する、発光構造体。
- 請求項7に記載の発光構造体であり、前記反射体が透明材料中に配置された粒子を含む、発光構造体。
- 発光構造体であって:
半導体発光デバイスと;
前記半導体発光デバイスに付着された平坦な波長変換素子であり、前記半導体発光デバイスに面する該波長変換素子の底部表面の面積が、前記半導体発光デバイスの頂部表面の面積と等しく、
前記底部表面から上方へ延びる第1側端部を有する波長変換層;及び
透明層であり、該透明層に前記波長変換層が形成され、頂部表面及び該頂部表面から延び前記波長変換層の第1側端部に揃う第2側端部を有する透明層;
を含む波長変換素子と;
前記半導体発光デバイスの側部、前記第1側端部及び前記半導体発光デバイスの前記頂部表面を越えて延在する前記底部表面の一部に接触する反射体であり、該反射体の頂部が前記波長変換素子と同一平面である、反射体と;
を含む発光構造体。 - 請求項13に記載の発光構造体であり、前記透明層がガラスであり、前記波長変換層が透明材料と混合され前記ガラスの上に積層された蛍光体である、発光構造体。
- 請求項13に記載の発光構造体であり、前記半導体発光デバイスが、成長基板上に配置された半導体構造物を含み、前記波長変換素子が前記成長基板に取り付けられ、前記反射体が前記成長基板の側部に接触する、発光構造体。
- 請求項15に記載の発光構造体であり、前記成長基板が、前記半導体発光デバイスの前記頂部表面の面積と等しい頂部表面を有する、発光構造体。
- 請求項13に記載の発光構造体であり、前記反射体が透明材料中に配置された粒子を含む、発光構造体。
- 請求項13に記載の発光構造体であり、前記反射体が前記波長変換素子の頂部表面に配置された、発光構造体。
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US201462014288P | 2014-06-19 | 2014-06-19 | |
US62/014,288 | 2014-06-19 | ||
JP2020092052A JP7136834B2 (ja) | 2014-06-19 | 2020-05-27 | 小型光源を有する波長変換発光デバイス |
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JP2020092052A Active JP7136834B2 (ja) | 2014-06-19 | 2020-05-27 | 小型光源を有する波長変換発光デバイス |
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EP (1) | EP3158594A1 (ja) |
JP (3) | JP2017520118A (ja) |
KR (1) | KR102408839B1 (ja) |
CN (2) | CN106575693B (ja) |
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WO2015193763A1 (en) * | 2014-06-19 | 2015-12-23 | Koninklijke Philips N.V. | Wavelength converted light emitting device with small source size |
KR102527387B1 (ko) * | 2016-02-24 | 2023-04-28 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
WO2017146476A1 (ko) * | 2016-02-26 | 2017-08-31 | 서울반도체주식회사 | 디스플레이 장치 및 그의 제조 방법 |
JP6447548B2 (ja) | 2016-03-14 | 2019-01-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2018023027A1 (en) * | 2016-07-28 | 2018-02-01 | Lumileds Llc | Light emitting device package with reflective side coating |
US10193043B2 (en) | 2016-07-28 | 2019-01-29 | Lumileds Llc | Light emitting device package with reflective side coating |
JP7046917B2 (ja) * | 2017-03-29 | 2022-04-04 | ヌヴォトンテクノロジージャパン株式会社 | 波長変換素子及び発光装置 |
US10700245B2 (en) | 2017-07-04 | 2020-06-30 | Nichia Corporation | Light-emitting device |
JP2019016780A (ja) * | 2017-07-04 | 2019-01-31 | 日亜化学工業株式会社 | 発光装置 |
JP6963177B2 (ja) * | 2017-12-14 | 2021-11-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN110112123A (zh) * | 2018-02-01 | 2019-08-09 | 晶元光电股份有限公司 | 发光装置及其制造方法 |
EP3598510B1 (en) * | 2018-07-18 | 2022-02-23 | Lumileds LLC | Light emitting diode device and producing methods thereof |
US11233180B2 (en) | 2018-08-31 | 2022-01-25 | Lumileds Llc | Phosphor converted LED with high color quality |
JP6959548B2 (ja) * | 2018-10-04 | 2021-11-02 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP6601552B2 (ja) * | 2018-12-05 | 2019-11-06 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10903266B2 (en) * | 2018-12-31 | 2021-01-26 | Lumileds Llc | Ultra-smooth sidewall pixelated array LEDs |
US11189757B2 (en) * | 2019-12-12 | 2021-11-30 | Lumileds Llc | Light emitting diodes with reflective sidewalls comprising porous particles |
DE102022101579A1 (de) * | 2022-01-24 | 2023-07-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement |
CN117497525A (zh) * | 2023-12-28 | 2024-02-02 | 江西晶亮光电科技协同创新有限公司 | 多晶发光装置及其制备方法 |
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EP3158594A1 (en) | 2017-04-26 |
JP7136834B2 (ja) | 2022-09-13 |
TWI663752B (zh) | 2019-06-21 |
US20200295241A1 (en) | 2020-09-17 |
KR20170023097A (ko) | 2017-03-02 |
CN106575693B (zh) | 2020-07-31 |
US10090444B2 (en) | 2018-10-02 |
TW201608739A (zh) | 2016-03-01 |
TW201933632A (zh) | 2019-08-16 |
CN106575693A (zh) | 2017-04-19 |
KR102408839B1 (ko) | 2022-06-14 |
US20180331261A1 (en) | 2018-11-15 |
JP2020145472A (ja) | 2020-09-10 |
CN111816750A (zh) | 2020-10-23 |
JP2017520118A (ja) | 2017-07-20 |
US20170133559A1 (en) | 2017-05-11 |
TWI734110B (zh) | 2021-07-21 |
US11133442B2 (en) | 2021-09-28 |
WO2015193763A1 (en) | 2015-12-23 |
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