JP2017520118A - 小型光源を有する波長変換発光デバイス - Google Patents
小型光源を有する波長変換発光デバイス Download PDFInfo
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- JP2017520118A JP2017520118A JP2016573841A JP2016573841A JP2017520118A JP 2017520118 A JP2017520118 A JP 2017520118A JP 2016573841 A JP2016573841 A JP 2016573841A JP 2016573841 A JP2016573841 A JP 2016573841A JP 2017520118 A JP2017520118 A JP 2017520118A
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- light emitting
- wavelength conversion
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- conversion element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
Description
本発明は、波長変換発光デバイスに関する。
Claims (14)
- 発光構造体であって:
半導体発光デバイスと;
前記半導体発光デバイスに付着された平坦な波長変換素子と;
を含み、
前記平坦な波長変換素子が、
前記半導体発光デバイスにより発光された光を吸収し、異なる波長の光を発光する波長変換層と;
透明層と;
を含み、前記波長変換層が前記透明層の上に形成されている、
発光構造体。 - 請求項1に記載の発光構造体であり、前記平坦な波長変換素子が前記半導体発光デバイスの頂部表面と同じ面積である、発光構造体。
- 請求項1に記載の発光構造体であり、前記平坦な波長変換素子の面積が前記半導体発光デバイスの頂部表面の面積の150%以下である、発光構造体。
- 請求項1に記載の発光構造体であり、前記透明層がガラスであり、前記波長変換層が透明材料と混合され前記ガラスの上に積層された蛍光体である、発光構造体。
- 請求項1に記載の発光構造体であり、さらに、
前記半導体発光デバイスの側部及び前記平坦な波長変換素子の側部に配置された反射性材料、
を含む発光構造体。 - 請求項1に記載の発光構造体であり、前記平坦な波長変換素子が前記半導体発光デバイスの端部を越えて延びる長さが30μm以下である、発光構造体。
- 透明層の上に配置された波長変換層を含む波長変換素子を形成する形成ステップと;
前記形成ステップの後に、前記波長変換素子を半導体発光デバイスのウェファに付着する付着ステップと;
前記付着ステップの後に、前記波長変換素子及び前記半導体発光デバイスのウェファをダイシングし、複数の発光素子を形成するダイシングステップと;
前記ダイシングステップの後に、ハンドリング基板上に複数の発光素子を配置するステップと;
前記複数の発光素子の間に反射性材料を配置するステップと;
を含む方法。 - 請求項7に記載の方法であり、前記形成ステップが、ガラス層の上に波長変換層を積層するステップを含む、方法。
- 請求項7に記載の方法であり、さらに、前記付着ステップの後に透明層を除去するステップを含む、方法。
- 透明層の上に配置された波長変換層を含む波長変換素子を形成する形成ステップと;
前記形成ステップの後に、前記波長変換素子を、ハンドリング基板の上に配置された複数のダイシングされた半導体発光デバイスに付着する付着ステップと;
前記付着ステップの後に、前記波長変換素子をダイシングし、複数の発光素子を形成するダイシングステップと;
を含む方法。 - 請求項10に記載の方法であり、さらに、
前記ダイシングステップの後に、ハンドリング基板の上に複数の発光素子を配置するステップと;
前記複数の発光素子の間に反射性材料を配置するステップと;
を含む方法。 - 請求項10に記載の方法であり、前記形成ステップが、透明層の上に波長変換層を積層するステップを含む、方法。
- 請求項10に記載の方法であり、さらに、前記ダイシングステップの後に前記透明層を除去する除去ステップを含む、方法。
- 請求項13に記載の方法であり、
前記波長変換素子が、前記波長変換層と前記透明層との間に配置された熱開放層を含み;かつ、
前記除去ステップが、熱開放により前記透明層を除去するステップを含む;
方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201462014288P | 2014-06-19 | 2014-06-19 | |
US62/014,288 | 2014-06-19 | ||
PCT/IB2015/054261 WO2015193763A1 (en) | 2014-06-19 | 2015-06-05 | Wavelength converted light emitting device with small source size |
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JP2020092052A Division JP7136834B2 (ja) | 2014-06-19 | 2020-05-27 | 小型光源を有する波長変換発光デバイス |
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JP2017520118A true JP2017520118A (ja) | 2017-07-20 |
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JP2016573841A Pending JP2017520118A (ja) | 2014-06-19 | 2015-06-05 | 小型光源を有する波長変換発光デバイス |
JP2020092052A Active JP7136834B2 (ja) | 2014-06-19 | 2020-05-27 | 小型光源を有する波長変換発光デバイス |
JP2022139025A Pending JP2022177058A (ja) | 2014-06-19 | 2022-09-01 | 小型光源を有する波長変換発光デバイス |
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JP2022139025A Pending JP2022177058A (ja) | 2014-06-19 | 2022-09-01 | 小型光源を有する波長変換発光デバイス |
Country Status (7)
Country | Link |
---|---|
US (3) | US10090444B2 (ja) |
EP (1) | EP3158594A1 (ja) |
JP (3) | JP2017520118A (ja) |
KR (1) | KR102408839B1 (ja) |
CN (2) | CN111816750A (ja) |
TW (2) | TWI734110B (ja) |
WO (1) | WO2015193763A1 (ja) |
Cited By (3)
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JP2019106502A (ja) * | 2017-12-14 | 2019-06-27 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2020013981A (ja) * | 2018-07-18 | 2020-01-23 | ルミレッズ ホールディング ベーフェー | 発光デバイス |
JP2020061543A (ja) * | 2018-10-04 | 2020-04-16 | 日亜化学工業株式会社 | 発光装置 |
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US10193043B2 (en) | 2016-07-28 | 2019-01-29 | Lumileds Llc | Light emitting device package with reflective side coating |
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2015
- 2015-06-05 KR KR1020177001561A patent/KR102408839B1/ko active IP Right Grant
- 2015-06-05 CN CN202010631364.5A patent/CN111816750A/zh active Pending
- 2015-06-05 CN CN201580044286.6A patent/CN106575693B/zh active Active
- 2015-06-05 EP EP15730288.6A patent/EP3158594A1/en active Pending
- 2015-06-05 US US15/318,143 patent/US10090444B2/en active Active
- 2015-06-05 JP JP2016573841A patent/JP2017520118A/ja active Pending
- 2015-06-05 WO PCT/IB2015/054261 patent/WO2015193763A1/en active Application Filing
- 2015-06-17 TW TW108115939A patent/TWI734110B/zh active
- 2015-06-17 TW TW104119623A patent/TWI663752B/zh active
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2018
- 2018-07-23 US US16/042,660 patent/US20180331261A1/en not_active Abandoned
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2020
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KR20170023097A (ko) | 2017-03-02 |
US20180331261A1 (en) | 2018-11-15 |
CN111816750A (zh) | 2020-10-23 |
TWI734110B (zh) | 2021-07-21 |
JP7136834B2 (ja) | 2022-09-13 |
US11133442B2 (en) | 2021-09-28 |
JP2022177058A (ja) | 2022-11-30 |
US20200295241A1 (en) | 2020-09-17 |
EP3158594A1 (en) | 2017-04-26 |
JP2020145472A (ja) | 2020-09-10 |
TW201933632A (zh) | 2019-08-16 |
KR102408839B1 (ko) | 2022-06-14 |
WO2015193763A1 (en) | 2015-12-23 |
US20170133559A1 (en) | 2017-05-11 |
US10090444B2 (en) | 2018-10-02 |
TW201608739A (zh) | 2016-03-01 |
CN106575693A (zh) | 2017-04-19 |
CN106575693B (zh) | 2020-07-31 |
TWI663752B (zh) | 2019-06-21 |
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