JP2022006418A - シリコンウェーハ、及び、シリコンウェーハの製造方法 - Google Patents
シリコンウェーハ、及び、シリコンウェーハの製造方法 Download PDFInfo
- Publication number
- JP2022006418A JP2022006418A JP2020108627A JP2020108627A JP2022006418A JP 2022006418 A JP2022006418 A JP 2022006418A JP 2020108627 A JP2020108627 A JP 2020108627A JP 2020108627 A JP2020108627 A JP 2020108627A JP 2022006418 A JP2022006418 A JP 2022006418A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- silicon
- concentration
- silicon wafer
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 117
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 117
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000002344 surface layer Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 39
- 239000011148 porous material Substances 0.000 claims description 33
- 239000002244 precipitate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 230000007547 defect Effects 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 15
- 239000011800 void material Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 76
- 230000003028 elevating effect Effects 0.000 description 23
- 230000000694 effects Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 9
- 238000004088 simulation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005247 gettering Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000002926 oxygen Chemical class 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
シリコンからなるチョクラルスキーウェーハであって、
バルク層の酸素濃度が、0.5×1018/cm3以上であり、
表面から深さ300nmまでの表面層における酸素濃度が2×1018/cm3以上であるシリコンウェーハを構成した。
チョクラルスキー法で育成された単結晶シリコンのインゴットをスライスして得られたシリコンウェーハに対し、酸化性雰囲気下において、1315℃以上1375℃以下の範囲内の最高温度に5秒以上30秒以下の間保持した後に、前記最高温度から1100℃まで50℃/秒以上150℃/秒以下の冷却速度で冷却し、前記冷却後に、酸素濃度が2×1018/cm3以上となる深さまで表面層を除去するシリコンウェーハの製造方法を構成した。
2 表面層
3 バルク層
Claims (11)
- シリコンからなるチョクラルスキーウェーハ(1)であって、
バルク層(3)の酸素濃度が、0.5×1018/cm3以上であり、
表面から深さ300nmまでの表面層(2)における酸素濃度が2×1018/cm3以上であるシリコンウェーハ。 - 表面から深さ300nmまでの表面層(2)における酸素濃度が2.5×1018/cm3以上である請求項1に記載のシリコンウェーハ。
- 表面から深さ30μmまでの領域において、サイズ15nm以上のボイド欠陥の密度が1×106/cm3以下であり、かつ、球形換算での直径が15nm以上の酸素析出物の密度が1×106/cm3以下である請求項1又は2に記載のシリコンウェーハ。
- 深さ100μmから厚み中心までの空孔濃度が1×1012/cm3以上である請求項1から3のいずれか1項に記載のシリコンウェーハ。
- 前記単結晶シリコンの空孔濃度CVと格子間シリコン原子濃度CIの濃度差CV-CIが、-2.0×1012/cm3以上、6.0×1012/cm3以下の範囲内である請求項1から4のいずれか1項に記載のシリコンウェーハ。
- チョクラルスキー法で育成された単結晶シリコンのインゴットをスライスして得られたシリコンウェーハ(1)に対し、酸化性雰囲気下において、1315℃以上1375℃以下の範囲内の最高温度に5秒以上30秒以下の間保持した後に、前記最高温度から1100℃まで50℃/秒以上150℃/秒以下の冷却速度で冷却し、前記冷却後に、酸素濃度が2×1018/cm3以上となる深さまで表面層(2)を除去するシリコンウェーハの製造方法。
- 前記最高温度が1325℃以上1350℃以下の範囲内である請求項6に記載のシリコンウェーハの製造方法。
- 前記酸化性雰囲気が酸素雰囲気であって、その酸素分圧が1%以上100%以下の範囲内である請求項6又は7に記載のシリコンウェーハの製造方法。
- 800℃以上1000℃以下の範囲内で1時間以上4時間以下の範囲内で熱処理を行い、深さ100μmから厚み中心までの領域内に、球形換算での直径が15nm以上の酸素析出物を1×108/cm3以上の密度で形成した請求項6から8のいずれか1項に記載のシリコンウェーハの製造方法。
- 前記酸化性雰囲気での熱処理によって、深さ100μmから厚み中心までの空孔濃度が1×1012/cm3以上となるよう空孔を導入する請求項6から9のいずれか1項に記載のシリコンウェーハの製造方法。
- 前記単結晶シリコンの空孔濃度CVと格子間シリコン原子濃度CIの濃度差CV-CIが、-2.0×1012/cm3以上、6.0×1012/cm3以下の範囲内となるよう空孔及び格子間シリコン原子を導入する請求項6から10のいずれか1項に記載のシリコンウェーハの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020108627A JP7090295B2 (ja) | 2020-06-24 | 2020-06-24 | シリコンウェーハ、及び、シリコンウェーハの製造方法 |
US18/011,422 US20230243062A1 (en) | 2020-06-24 | 2021-06-14 | Silicon wafer and method for producing silicon wafer |
KR1020227045493A KR20230015460A (ko) | 2020-06-24 | 2021-06-14 | 실리콘 웨이퍼 및 실리콘 웨이퍼의 제조 방법 |
PCT/JP2021/022485 WO2021261309A1 (ja) | 2020-06-24 | 2021-06-14 | シリコンウェーハ、及び、シリコンウェーハの製造方法 |
TW110122408A TWI809428B (zh) | 2020-06-24 | 2021-06-18 | 矽晶圓、及矽晶圓之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020108627A JP7090295B2 (ja) | 2020-06-24 | 2020-06-24 | シリコンウェーハ、及び、シリコンウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022006418A true JP2022006418A (ja) | 2022-01-13 |
JP7090295B2 JP7090295B2 (ja) | 2022-06-24 |
Family
ID=79281126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020108627A Active JP7090295B2 (ja) | 2020-06-24 | 2020-06-24 | シリコンウェーハ、及び、シリコンウェーハの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230243062A1 (ja) |
JP (1) | JP7090295B2 (ja) |
KR (1) | KR20230015460A (ja) |
TW (1) | TWI809428B (ja) |
WO (1) | WO2021261309A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008207991A (ja) * | 2007-02-26 | 2008-09-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの製造方法 |
WO2010016586A1 (ja) * | 2008-08-08 | 2010-02-11 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
JP2010040587A (ja) * | 2008-07-31 | 2010-02-18 | Covalent Materials Corp | シリコンウェーハの製造方法 |
JP2013143504A (ja) * | 2012-01-11 | 2013-07-22 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハの製造方法及び電子デバイス |
JP2015032810A (ja) * | 2013-08-07 | 2015-02-16 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
WO2017208582A1 (ja) * | 2016-06-01 | 2017-12-07 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013010188A1 (de) | 2012-06-21 | 2013-12-24 | Fairchild Semiconductor Corp. | Schalt-Schaltkreis und Steuer- bzw. Regelschaltkreis |
KR102370145B1 (ko) | 2017-08-11 | 2022-03-04 | 현대자동차주식회사 | 배터리 관리 장치, 그를 가지는 차량 및 그 제어 방법 |
-
2020
- 2020-06-24 JP JP2020108627A patent/JP7090295B2/ja active Active
-
2021
- 2021-06-14 WO PCT/JP2021/022485 patent/WO2021261309A1/ja active Application Filing
- 2021-06-14 KR KR1020227045493A patent/KR20230015460A/ko not_active Application Discontinuation
- 2021-06-14 US US18/011,422 patent/US20230243062A1/en active Pending
- 2021-06-18 TW TW110122408A patent/TWI809428B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008207991A (ja) * | 2007-02-26 | 2008-09-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの製造方法 |
JP2010040587A (ja) * | 2008-07-31 | 2010-02-18 | Covalent Materials Corp | シリコンウェーハの製造方法 |
WO2010016586A1 (ja) * | 2008-08-08 | 2010-02-11 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
JP2013143504A (ja) * | 2012-01-11 | 2013-07-22 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハの製造方法及び電子デバイス |
JP2015032810A (ja) * | 2013-08-07 | 2015-02-16 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
WO2017208582A1 (ja) * | 2016-06-01 | 2017-12-07 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI809428B (zh) | 2023-07-21 |
US20230243062A1 (en) | 2023-08-03 |
JP7090295B2 (ja) | 2022-06-24 |
TW202217093A (zh) | 2022-05-01 |
WO2021261309A1 (ja) | 2021-12-30 |
KR20230015460A (ko) | 2023-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100913635B1 (ko) | 실리콘 단결정의 제조 방법 및 실리콘 웨이퍼 | |
TWI553173B (zh) | An annealing wafer, an annealing wafer, and a method of manufacturing the device | |
WO2001017024A1 (fr) | Procede de fabrication d'une tranche du type silicium sur isolant collee et tranche du type silicium sur isolant collee | |
JP6115651B2 (ja) | シリコンウェーハの製造方法 | |
JP6044660B2 (ja) | シリコンウェーハの製造方法 | |
TWI428483B (zh) | 矽晶圓及其製造方法 | |
KR20140001815A (ko) | 실리콘 기판의 제조 방법 및 실리콘 기판 | |
JP2007045662A (ja) | 半導体シリコンウェーハおよびその製造方法 | |
JP6447351B2 (ja) | シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ | |
US10861990B2 (en) | Epitaxial silicon wafer | |
KR20140021543A (ko) | 실리콘 기판의 제조방법 및 실리콘 기판 | |
TWI628317B (zh) | 柴氏拉晶法生長單晶矽的方法 | |
JPH06295912A (ja) | シリコンウエハの製造方法およびシリコンウエハ | |
JP7090295B2 (ja) | シリコンウェーハ、及び、シリコンウェーハの製造方法 | |
JP2013048137A (ja) | シリコンウェーハの製造方法 | |
JP2002198375A (ja) | 半導体ウェーハの熱処理方法及びその方法で製造された半導体ウェーハ | |
KR20130033985A (ko) | 실리콘 웨이퍼의 열처리 방법 | |
JP2013030723A (ja) | シリコンウェーハの製造方法 | |
KR20220029585A (ko) | 탄소도프 실리콘 단결정 웨이퍼 및 그의 제조방법 | |
JP2006040972A (ja) | シリコンエピタキシャルウェーハおよびその製造方法 | |
JP5965607B2 (ja) | シリコンウェーハの製造方法 | |
JPH06295913A (ja) | シリコンウエハの製造方法及びシリコンウエハ | |
JP2003073191A (ja) | エピタキシャルウェーハの製造方法 | |
JPH0897222A (ja) | シリコンウェーハの製造方法およびシリコンウェーハ | |
CN115135818B (zh) | 半导体硅晶片的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7426 Effective date: 20200728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20200728 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210604 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210817 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20211011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7090295 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |