JP2022002253A - ガスノズル、基板処理装置及び基板処理方法 - Google Patents
ガスノズル、基板処理装置及び基板処理方法 Download PDFInfo
- Publication number
- JP2022002253A JP2022002253A JP2020106472A JP2020106472A JP2022002253A JP 2022002253 A JP2022002253 A JP 2022002253A JP 2020106472 A JP2020106472 A JP 2020106472A JP 2020106472 A JP2020106472 A JP 2020106472A JP 2022002253 A JP2022002253 A JP 2022002253A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas nozzle
- tip
- hole
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 20
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 385
- 239000012495 reaction gas Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 21
- 238000009826 distribution Methods 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 16
- 238000010926 purge Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000014759 maintenance of location Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009849 deactivation Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
図1及び図2を参照し、実施形態の基板処理装置の一例について説明する。図1は、実施形態の基板処理装置の一例を示す概略図である。図2は、ガスノズルの配置を説明するための図である。
図3〜図5を参照し、実施形態の基板処理装置1が備えるガスノズル32の構成例について説明する。
図6を参照し、パーティクル発生のメカニズムについて説明する。図6は、パーティクル発生のメカニズムを説明するための図である。図6は、互いに反応するAガスとBガスとをパージを挟んで交互に供給してAガスとBガスとの反応生成物を堆積させる原子層堆積(ALD:Atomic Layer Deposition)法の動作を示す。
実施形態の基板処理方法について、前述の基板処理装置1を用いてALD法により、ウエハWにシリコン酸化膜を成膜する方法を例に挙げて説明する。
実施例では、実施形態に係る基板処理装置1の効果を確認するために、先端孔の孔径、数及び管軸に対する配向角度(以下「配向角度」という。)が異なるガスノズルからオゾンガスを吐出させたときのオゾンガスの流速分布及び濃度分布について数値解析を行った。数値解析では、Ansys社製の流体解析ソフトウェアFluentを用いた。
実施例1では、3種類のガスノズルA1〜A3からオゾンガスを吐出させたときのオゾンガスの流速分布を解析した。
実施例2では、3種類のガスノズルA1、A4、A5からオゾンガスを吐出させたときのオゾンガスの流速分布を解析した。
実施例3では、4種類のガスノズルA6〜A9からオゾンガスを吐出させたときのオゾンガスの流速分布について数値解析を行った。
実施例4では、ガスノズルA10からオゾンガスを吐出させたときのオゾンガスの流速分布について数値解析を行った。
実施例5では、実施例3と同じ4種類のガスノズルA6〜A9からオゾンガスを吐出させたときのオゾンガスの濃度分布について数値解析を行った。
実施例6では、実施例4と同じガスノズルA10からオゾンガスを吐出させたときのオゾンガスの濃度分布について数値解析を行った。
10 処理容器
31、32 ガスノズル
31a、32a ガス孔
31b、32b 先端孔
31c、32c 第2の先端孔
Claims (8)
- 略円筒形状の処理容器の内壁内側に沿って鉛直方向に延設するガスノズルであって、
前記ガスノズルは、
長手方向に沿って間隔を空けて設けられた複数の第1のガス孔と、
先端に設けられ、長手方向からの平面視で前記複数の第1のガス孔が設けられる側と反対側に配向し、開口面積が前記複数の第1のガス孔の各々よりも大きい第2のガス孔と、
を有する、
ガスノズル。 - 前記第2のガス孔は、前記長手方向に対する配向角度が30度〜90度である、
請求項1に記載のガスノズル。 - 前記第2のガス孔は、円形、楕円形、長方形又は角丸長方形の開口である、
請求項1又は2に記載のガスノズル。 - 前記先端に設けられ、前記長手方向からの平面視で前記複数の第1のガス孔が設けられる側と反対側であり、前記第2のガス孔と異なる方向に配向する第3のガス孔を有する、
請求項1乃至3のいずれか一項に記載のガスノズル。 - 前記第1のガス孔は、前記処理容器の中心側に配向し、
前記第2のガス孔は、前記処理容器の近傍の内壁側に配向する、
請求項1乃至4のいずれか一項に記載のガスノズル。 - 略円筒形状の処理容器と、
前記処理容器の内壁内側に沿って鉛直方向に延設するガスノズルと、
を備え、
前記ガスノズルは、
長手方向に沿って間隔を空けて設けられた複数の第1のガス孔と、
先端に設けられ、長手方向からの平面視で前記複数の第1のガス孔が設けられる側と反対側に配向し、開口面積が前記複数の第1のガス孔の各々よりも大きい第2のガス孔と、
を有する、
基板処理装置。 - 第1のガスノズルから処理容器内に第1の処理ガスを吐出する工程と、
第2のガスノズルから前記処理容器内に前記第1の処理ガスと反応して反応生成物を生成する第2の処理ガスを吐出する工程と、
前記第1の処理ガスを吐出する工程と前記第2の処理ガスを吐出する工程とを含むサイクルを繰り返す工程と、
を有し、
前記第1のガスノズル及び前記第2のガスノズルは、略円筒形状の処理容器の内壁内側に沿って鉛直方向に延設し、
前記第2のガスノズルは、
長手方向に沿って間隔を空けて設けられた複数の第1のガス孔と、
先端に設けられ、長手方向からの平面視で前記複数の第1のガス孔が設けられる側と反対側に配向し、開口面積が前記複数の第1のガス孔の各々よりも大きい第2のガス孔と、
を有する、
基板処理方法。 - 前記第1の処理ガスは、シリコン又は金属を含有する原料ガスであり、
前記第2の処理ガスは、酸素又は窒素を含有する反応ガスである、
請求項7に記載の基板処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020106472A JP7365973B2 (ja) | 2020-06-19 | 2020-06-19 | ガスノズル、基板処理装置及び基板処理方法 |
KR1020210075529A KR20210157332A (ko) | 2020-06-19 | 2021-06-10 | 가스 노즐, 기판 처리 장치 및 기판 처리 방법 |
CN202110652056.5A CN113818008A (zh) | 2020-06-19 | 2021-06-11 | 气体喷嘴、基板处理装置以及基板处理方法 |
US17/304,119 US11993848B2 (en) | 2020-06-19 | 2021-06-15 | Gas nozzle, substrate processing apparatus, and substrate processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020106472A JP7365973B2 (ja) | 2020-06-19 | 2020-06-19 | ガスノズル、基板処理装置及び基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022002253A true JP2022002253A (ja) | 2022-01-06 |
JP7365973B2 JP7365973B2 (ja) | 2023-10-20 |
Family
ID=78923847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020106472A Active JP7365973B2 (ja) | 2020-06-19 | 2020-06-19 | ガスノズル、基板処理装置及び基板処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11993848B2 (ja) |
JP (1) | JP7365973B2 (ja) |
KR (1) | KR20210157332A (ja) |
CN (1) | CN113818008A (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017147262A (ja) * | 2016-02-15 | 2017-08-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
JP2019110269A (ja) * | 2017-12-20 | 2019-07-04 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11219908A (ja) * | 1998-02-03 | 1999-08-10 | Kokusai Electric Co Ltd | 基板処理装置および基板処理方法 |
TW432488B (en) * | 1999-04-12 | 2001-05-01 | Mosel Vitelic Inc | Reaction facility for forming film and method of air intake |
KR100766196B1 (ko) | 2003-08-26 | 2007-10-10 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
JP2010093131A (ja) * | 2008-10-09 | 2010-04-22 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5887962B2 (ja) | 2012-01-31 | 2016-03-16 | 東京エレクトロン株式会社 | 成膜装置 |
JP2013197329A (ja) | 2012-03-21 | 2013-09-30 | Renesas Electronics Corp | 半導体装置の製造装置および半導体装置の製造方法 |
KR101929481B1 (ko) * | 2012-03-26 | 2018-12-14 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
JP2014175494A (ja) | 2013-03-08 | 2014-09-22 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法、半導体装置の製造方法および基板の製造方法 |
JP6128969B2 (ja) | 2013-06-03 | 2017-05-17 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
WO2015045137A1 (ja) * | 2013-09-30 | 2015-04-02 | 株式会社日立国際電気 | 基板処理装置、基板処理方法および半導体装置の製造方法 |
JP6578243B2 (ja) * | 2015-07-17 | 2019-09-18 | 株式会社Kokusai Electric | ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム |
JP6695975B2 (ja) | 2016-07-05 | 2020-05-20 | 株式会社Kokusai Electric | 基板処理装置、ガスノズルおよび半導体装置の製造方法 |
JP6710149B2 (ja) * | 2016-11-21 | 2020-06-17 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6737215B2 (ja) * | 2017-03-16 | 2020-08-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP6759137B2 (ja) | 2017-03-24 | 2020-09-23 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP6703496B2 (ja) * | 2017-03-27 | 2020-06-03 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP6856576B2 (ja) * | 2018-05-25 | 2021-04-07 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7308241B2 (ja) * | 2021-08-20 | 2023-07-13 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
-
2020
- 2020-06-19 JP JP2020106472A patent/JP7365973B2/ja active Active
-
2021
- 2021-06-10 KR KR1020210075529A patent/KR20210157332A/ko active Search and Examination
- 2021-06-11 CN CN202110652056.5A patent/CN113818008A/zh active Pending
- 2021-06-15 US US17/304,119 patent/US11993848B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017147262A (ja) * | 2016-02-15 | 2017-08-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
JP2019110269A (ja) * | 2017-12-20 | 2019-07-04 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN113818008A (zh) | 2021-12-21 |
JP7365973B2 (ja) | 2023-10-20 |
US11993848B2 (en) | 2024-05-28 |
KR20210157332A (ko) | 2021-12-28 |
US20210395893A1 (en) | 2021-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5589878B2 (ja) | 成膜装置 | |
KR101753736B1 (ko) | 처리 장치 및 성막 방법 | |
JP2018107255A (ja) | 成膜装置、成膜方法及び断熱部材 | |
JP6478847B2 (ja) | 基板処理装置 | |
US20090088001A1 (en) | Substrate processing apparatus and manufacturing method of semiconductor device | |
KR102003585B1 (ko) | 기판 보유 지지구 및 기판 처리 장치 | |
JP2018095901A (ja) | 基板処理装置 | |
TWI807192B (zh) | 氣體導入構造、熱處理裝置及氣體供給方法 | |
US11970778B2 (en) | Processing apparatus | |
JP3960987B2 (ja) | 反応容器 | |
JP7365973B2 (ja) | ガスノズル、基板処理装置及び基板処理方法 | |
JP7433178B2 (ja) | 処理装置 | |
US20220081771A1 (en) | Processing apparatus and processing method | |
US11859285B2 (en) | Processing apparatus and processing method | |
JP7486388B2 (ja) | ガス導入構造及び処理装置 | |
JPWO2020194433A1 (ja) | 半導体装置の製造方法、基板処理装置及びプログラム | |
JP7418287B2 (ja) | 基板処理装置及び基板処理方法 | |
WO2022059170A1 (ja) | 半導体装置の製造方法、記録媒体及び基板処理装置 | |
JP2017055034A (ja) | 熱処理装置 | |
JP2024088766A (ja) | 処理装置及び処理方法 | |
JP2022152978A (ja) | シリコン膜の形成方法及び処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230711 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230808 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230912 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231010 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7365973 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |