JP2021531667A5 - - Google Patents
Info
- Publication number
- JP2021531667A5 JP2021531667A5 JP2021527015A JP2021527015A JP2021531667A5 JP 2021531667 A5 JP2021531667 A5 JP 2021531667A5 JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021531667 A5 JP2021531667 A5 JP 2021531667A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tfr
- vertical metal
- metal
- metal wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/047,889 US10784193B2 (en) | 2018-07-27 | 2018-07-27 | IC with thin film resistor with metal walls |
| US16/047,889 | 2018-07-27 | ||
| PCT/US2019/043432 WO2020023743A1 (en) | 2018-07-27 | 2019-07-25 | Ic with thin film resistor with metal walls |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021531667A JP2021531667A (ja) | 2021-11-18 |
| JP2021531667A5 true JP2021531667A5 (https=) | 2022-08-02 |
| JP7469815B2 JP7469815B2 (ja) | 2024-04-17 |
Family
ID=69178626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021527015A Active JP7469815B2 (ja) | 2018-07-27 | 2019-07-25 | 金属壁を備えた薄膜抵抗器を備える集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10784193B2 (https=) |
| EP (1) | EP3830865A4 (https=) |
| JP (1) | JP7469815B2 (https=) |
| WO (1) | WO2020023743A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10784193B2 (en) * | 2018-07-27 | 2020-09-22 | Texas Instruments Incorporated | IC with thin film resistor with metal walls |
| US11990257B2 (en) * | 2020-02-27 | 2024-05-21 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136334A (ja) * | 1983-12-21 | 1985-07-19 | アドバンスト・マイクロ・デバイシズ・インコーポレイテッド | 集積回路用ヒユ−ズ素子及びその製造方法 |
| JP2821316B2 (ja) * | 1992-06-10 | 1998-11-05 | 株式会社デンソー | 半導体装置及びその製造方法 |
| US5389814A (en) * | 1993-02-26 | 1995-02-14 | International Business Machines Corporation | Electrically blowable fuse structure for organic insulators |
| JPH07153910A (ja) * | 1993-11-30 | 1995-06-16 | Sony Corp | 半導体基板上の絶縁構造 |
| US6081014A (en) * | 1998-11-06 | 2000-06-27 | National Semiconductor Corporation | Silicon carbide chrome thin-film resistor |
| US6475873B1 (en) * | 2000-08-04 | 2002-11-05 | Maxim Integrated Products, Inc. | Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology |
| JP2002237524A (ja) | 2001-02-09 | 2002-08-23 | Seiko Instruments Inc | 相補型ｍｏｓ半導体装置 |
| US6872655B2 (en) | 2003-02-04 | 2005-03-29 | Texas Instruments Incorporated | Method of forming an integrated circuit thin film resistor |
| JP2005268749A (ja) | 2004-02-19 | 2005-09-29 | Ricoh Co Ltd | 半導体装置 |
| US7193292B2 (en) | 2004-12-02 | 2007-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd | Fuse structure with charge protection circuit |
| US7403094B2 (en) | 2005-04-11 | 2008-07-22 | Texas Instruments Incorporated | Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating |
| JP2008021726A (ja) | 2006-07-11 | 2008-01-31 | Ricoh Co Ltd | トリミング回路及び半導体装置 |
| US7838429B2 (en) | 2007-07-18 | 2010-11-23 | Texas Instruments Incorporated | Method to manufacture a thin film resistor |
| JP2009141266A (ja) | 2007-12-10 | 2009-06-25 | Nec Electronics Corp | 半導体装置 |
| JP5561668B2 (ja) | 2009-11-16 | 2014-07-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR101730784B1 (ko) * | 2010-11-29 | 2017-04-26 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 |
| US8980723B2 (en) | 2012-06-15 | 2015-03-17 | Texas Instruments Incorporated | Multiple depth vias in an integrated circuit |
| JP6075114B2 (ja) * | 2013-02-27 | 2017-02-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6115277B2 (ja) | 2013-04-16 | 2017-04-19 | 富士電機株式会社 | 半導体装置 |
| US9627467B2 (en) | 2013-09-06 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion |
| US10269904B2 (en) | 2014-10-31 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| JP2016021586A (ja) | 2015-09-07 | 2016-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9893119B2 (en) | 2016-03-15 | 2018-02-13 | Texas Instruments Incorporated | Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors |
| WO2018004645A1 (en) | 2016-07-01 | 2018-01-04 | Intel Corporation | Thin film resistor integrated into local interconnect production |
| US10276648B1 (en) * | 2017-12-27 | 2019-04-30 | Texas Instruments Incorporated | Plasma treatment for thin film resistors on integrated circuits |
| US10784193B2 (en) * | 2018-07-27 | 2020-09-22 | Texas Instruments Incorporated | IC with thin film resistor with metal walls |
-
2018
- 2018-07-27 US US16/047,889 patent/US10784193B2/en active Active
-
2019
- 2019-07-25 JP JP2021527015A patent/JP7469815B2/ja active Active
- 2019-07-25 EP EP19841050.8A patent/EP3830865A4/en active Pending
- 2019-07-25 WO PCT/US2019/043432 patent/WO2020023743A1/en not_active Ceased
-
2020
- 2020-08-17 US US16/995,288 patent/US11424183B2/en active Active
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