JP2021531667A - 金属壁を備えた薄膜抵抗器を備える集積回路 - Google Patents
金属壁を備えた薄膜抵抗器を備える集積回路 Download PDFInfo
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- JP2021531667A JP2021531667A JP2021527015A JP2021527015A JP2021531667A JP 2021531667 A JP2021531667 A JP 2021531667A JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021531667 A JP2021531667 A JP 2021531667A
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- metal
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- tfr
- metal wall
- semiconductor surface
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 113
- 239000002184 metal Substances 0.000 title claims abstract description 113
- 239000010409 thin film Substances 0.000 title claims abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000002344 surface layer Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 43
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 7
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 7
- 238000009966 trimming Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 22
- 238000000151 deposition Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 carbon halogen Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
- 集積回路(IC)を製造する方法であって、
少なくとも1つの回路機能を実現するための機能回路要素を備える半導体表面層を有する基板であって、前記半導体表面層の上方にある金属層上のレベル間誘電体(ILD)層を備える、前記基板を提供すること、
前記ILD層上にTFR層を含む薄膜抵抗器(TFR)を形成すること、及び
前記TFRの少なくとも2つの側部上に少なくとも1つの垂直金属壁を形成すること、
を含み、
前記金属壁が、充填されたビアによって結合される少なくとも2つの金属レベルを含み、
前記機能回路要素が前記金属壁の外にある、
方法。 - 請求項1に記載の方法であって、前記TFR層が、シリコンクロム(SiCr)又はニッケルクロム(NiCr)を含む、方法。
- 請求項2に記載の方法であって、前記TFR層が、ドープされたポリシリコンを含む、方法。
- 請求項1に記載の方法であって、前記TFR層の厚みが1nm〜100nmである、方法。
- 請求項1に記載の方法であって、前記TFRをレーザートリミングすることを更に含む、方法。
- 請求項1に記載の方法であって、前記金属壁が各々前記金属壁の少なくとも2つを含む、方法。
- 請求項1に記載の方法であって、前記金属壁の前記少なくとも2つの金属レベルが、互い違いに配置された複数の金属アイランドを含む、方法。
- 請求項1に記載の方法であって、前記金属壁の前記少なくとも2つの金属レベルが、前記IC上で最小幅を共有する、方法。
- 請求項1に記載の方法であって、前記金属壁が前記半導体表面層から電気的に分離される、方法。
- 請求項1に記載の方法であって、前記TFRが100〜1,000Ω/平方のシート抵抗を有する、方法。
- 集積回路(IC)であって、
少なくとも1つの回路機能を実現するための機能回路要素を有する半導体表面層を有する基板であって、前記半導体表面層の上方にある金属層上にレベル間誘電体層を備える、前記基板、
前記ILD層上に薄膜抵抗器(TFR)層を含むTFR、及び
前記TFRの少なくとも2つの側部上の少なくとも1つの垂直金属壁、
を含み、
前記金属壁が、充填されたビアによって結合される少なくとも2つの金属レベルを含み、
前記機能回路要素が前記金属壁の外にある、
IC。 - 請求項11に記載のICであって、前記TFR層が、シリコンクロム(SiCr)又はニッケルクロム(NiCr)を含む、IC。
- 請求項11に記載のICであって、前記TFR層が、ドープされたポリシリコンを含む、IC。
- 請求項11に記載のICであって、前記TFR層の厚みが1nm〜100nmである、IC。
- 請求項11に記載のICであって、前記金属壁が各々前記金属壁の少なくとも2つを含む、IC。
- 請求項11に記載のICであって、前記金属壁の前記少なくとも2つ金属レベルが、互い違いに配置された複数の金属アイランドを含む、IC。
- 請求項11に記載のICであって、前記金属壁の前記少なくとも2つの金属レベルが、前記IC上で最小幅を共有する、IC。
- 請求項11に記載のICであって、前記金属壁が前記半導体表面層から電気的に分離される、IC。
- 請求項11に記載のICであって、前記TFRが100〜1,000Ω/平方のシート抵抗を有する、IC。
- 請求項11に記載のICであって、前記ICがアナログICを含む、IC。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/047,889 | 2018-07-27 | ||
US16/047,889 US10784193B2 (en) | 2018-07-27 | 2018-07-27 | IC with thin film resistor with metal walls |
PCT/US2019/043432 WO2020023743A1 (en) | 2018-07-27 | 2019-07-25 | Ic with thin film resistor with metal walls |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021531667A true JP2021531667A (ja) | 2021-11-18 |
JPWO2020023743A5 JPWO2020023743A5 (ja) | 2022-08-02 |
JP7469815B2 JP7469815B2 (ja) | 2024-04-17 |
Family
ID=69178626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021527015A Active JP7469815B2 (ja) | 2018-07-27 | 2019-07-25 | 金属壁を備えた薄膜抵抗器を備える集積回路 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10784193B2 (ja) |
EP (1) | EP3830865A4 (ja) |
JP (1) | JP7469815B2 (ja) |
CN (1) | CN112514048A (ja) |
WO (1) | WO2020023743A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10784193B2 (en) * | 2018-07-27 | 2020-09-22 | Texas Instruments Incorporated | IC with thin film resistor with metal walls |
US11990257B2 (en) * | 2020-02-27 | 2024-05-21 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60136334A (ja) * | 1983-12-21 | 1985-07-19 | アドバンスト・マイクロ・デバイシズ・インコーポレイテッド | 集積回路用ヒユ−ズ素子及びその製造方法 |
JPH0661353A (ja) * | 1992-06-10 | 1994-03-04 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
US5389814A (en) * | 1993-02-26 | 1995-02-14 | International Business Machines Corporation | Electrically blowable fuse structure for organic insulators |
JPH07153910A (ja) * | 1993-11-30 | 1995-06-16 | Sony Corp | 半導体基板上の絶縁構造 |
JP2002237524A (ja) * | 2001-02-09 | 2002-08-23 | Seiko Instruments Inc | 相補型mos半導体装置 |
JP2005268749A (ja) * | 2004-02-19 | 2005-09-29 | Ricoh Co Ltd | 半導体装置 |
US20060118904A1 (en) * | 2004-12-02 | 2006-06-08 | Taiwan Semiconductor Manufacturing Co. Ltd. | Fuse structure with charge protection circuit |
JP2008021726A (ja) * | 2006-07-11 | 2008-01-31 | Ricoh Co Ltd | トリミング回路及び半導体装置 |
JP2009141266A (ja) * | 2007-12-10 | 2009-06-25 | Nec Electronics Corp | 半導体装置 |
JP2011108777A (ja) * | 2009-11-16 | 2011-06-02 | Renesas Electronics Corp | 半導体装置 |
JP2014207413A (ja) * | 2013-04-16 | 2014-10-30 | 富士電機株式会社 | 半導体装置 |
JP2016021586A (ja) * | 2015-09-07 | 2016-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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US6475873B1 (en) * | 2000-08-04 | 2002-11-05 | Maxim Integrated Products, Inc. | Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology |
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US7403094B2 (en) | 2005-04-11 | 2008-07-22 | Texas Instruments Incorporated | Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating |
US7838429B2 (en) | 2007-07-18 | 2010-11-23 | Texas Instruments Incorporated | Method to manufacture a thin film resistor |
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US10269904B2 (en) | 2014-10-31 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
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-
2018
- 2018-07-27 US US16/047,889 patent/US10784193B2/en active Active
-
2019
- 2019-07-25 EP EP19841050.8A patent/EP3830865A4/en active Pending
- 2019-07-25 CN CN201980050140.0A patent/CN112514048A/zh active Pending
- 2019-07-25 JP JP2021527015A patent/JP7469815B2/ja active Active
- 2019-07-25 WO PCT/US2019/043432 patent/WO2020023743A1/en unknown
-
2020
- 2020-08-17 US US16/995,288 patent/US11424183B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60136334A (ja) * | 1983-12-21 | 1985-07-19 | アドバンスト・マイクロ・デバイシズ・インコーポレイテッド | 集積回路用ヒユ−ズ素子及びその製造方法 |
JPH0661353A (ja) * | 1992-06-10 | 1994-03-04 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
US5389814A (en) * | 1993-02-26 | 1995-02-14 | International Business Machines Corporation | Electrically blowable fuse structure for organic insulators |
JPH07153910A (ja) * | 1993-11-30 | 1995-06-16 | Sony Corp | 半導体基板上の絶縁構造 |
JP2002237524A (ja) * | 2001-02-09 | 2002-08-23 | Seiko Instruments Inc | 相補型mos半導体装置 |
JP2005268749A (ja) * | 2004-02-19 | 2005-09-29 | Ricoh Co Ltd | 半導体装置 |
US20060118904A1 (en) * | 2004-12-02 | 2006-06-08 | Taiwan Semiconductor Manufacturing Co. Ltd. | Fuse structure with charge protection circuit |
JP2008021726A (ja) * | 2006-07-11 | 2008-01-31 | Ricoh Co Ltd | トリミング回路及び半導体装置 |
JP2009141266A (ja) * | 2007-12-10 | 2009-06-25 | Nec Electronics Corp | 半導体装置 |
JP2011108777A (ja) * | 2009-11-16 | 2011-06-02 | Renesas Electronics Corp | 半導体装置 |
JP2014207413A (ja) * | 2013-04-16 | 2014-10-30 | 富士電機株式会社 | 半導体装置 |
JP2016021586A (ja) * | 2015-09-07 | 2016-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN112514048A (zh) | 2021-03-16 |
US20200035598A1 (en) | 2020-01-30 |
US11424183B2 (en) | 2022-08-23 |
EP3830865A1 (en) | 2021-06-09 |
JP7469815B2 (ja) | 2024-04-17 |
US10784193B2 (en) | 2020-09-22 |
US20200381358A1 (en) | 2020-12-03 |
EP3830865A4 (en) | 2021-09-08 |
WO2020023743A1 (en) | 2020-01-30 |
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