JP7469815B2 - 金属壁を備えた薄膜抵抗器を備える集積回路 - Google Patents

金属壁を備えた薄膜抵抗器を備える集積回路 Download PDF

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JP7469815B2
JP7469815B2 JP2021527015A JP2021527015A JP7469815B2 JP 7469815 B2 JP7469815 B2 JP 7469815B2 JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021527015 A JP2021527015 A JP 2021527015A JP 7469815 B2 JP7469815 B2 JP 7469815B2
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layer
tfr
metal
ild
metal wall
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JP2021531667A5 (https=
JP2021531667A (ja
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ホン チージョン
グオ ホンリン
ジェーブズ タイマー ベンジャミン
ボイド シン グレゴリー
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021527015A 2018-07-27 2019-07-25 金属壁を備えた薄膜抵抗器を備える集積回路 Active JP7469815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/047,889 US10784193B2 (en) 2018-07-27 2018-07-27 IC with thin film resistor with metal walls
US16/047,889 2018-07-27
PCT/US2019/043432 WO2020023743A1 (en) 2018-07-27 2019-07-25 Ic with thin film resistor with metal walls

Publications (3)

Publication Number Publication Date
JP2021531667A JP2021531667A (ja) 2021-11-18
JP2021531667A5 JP2021531667A5 (https=) 2022-08-02
JP7469815B2 true JP7469815B2 (ja) 2024-04-17

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ID=69178626

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JP2021527015A Active JP7469815B2 (ja) 2018-07-27 2019-07-25 金属壁を備えた薄膜抵抗器を備える集積回路

Country Status (4)

Country Link
US (2) US10784193B2 (https=)
EP (1) EP3830865A4 (https=)
JP (1) JP7469815B2 (https=)
WO (1) WO2020023743A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237524A (ja) 2001-02-09 2002-08-23 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
JP2005268749A (ja) 2004-02-19 2005-09-29 Ricoh Co Ltd 半導体装置
US20060118904A1 (en) 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co. Ltd. Fuse structure with charge protection circuit
JP2008021726A (ja) 2006-07-11 2008-01-31 Ricoh Co Ltd トリミング回路及び半導体装置
JP2009141266A (ja) 2007-12-10 2009-06-25 Nec Electronics Corp 半導体装置
JP2011108777A (ja) 2009-11-16 2011-06-02 Renesas Electronics Corp 半導体装置
JP2014207413A (ja) 2013-04-16 2014-10-30 富士電機株式会社 半導体装置
JP2016021586A (ja) 2015-09-07 2016-02-04 ルネサスエレクトロニクス株式会社 半導体装置

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JPS60136334A (ja) * 1983-12-21 1985-07-19 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 集積回路用ヒユ−ズ素子及びその製造方法
JP2821316B2 (ja) * 1992-06-10 1998-11-05 株式会社デンソー 半導体装置及びその製造方法
US5389814A (en) * 1993-02-26 1995-02-14 International Business Machines Corporation Electrically blowable fuse structure for organic insulators
JPH07153910A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体基板上の絶縁構造
US6081014A (en) * 1998-11-06 2000-06-27 National Semiconductor Corporation Silicon carbide chrome thin-film resistor
US6475873B1 (en) * 2000-08-04 2002-11-05 Maxim Integrated Products, Inc. Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology
US6872655B2 (en) 2003-02-04 2005-03-29 Texas Instruments Incorporated Method of forming an integrated circuit thin film resistor
US7403094B2 (en) 2005-04-11 2008-07-22 Texas Instruments Incorporated Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating
US7838429B2 (en) 2007-07-18 2010-11-23 Texas Instruments Incorporated Method to manufacture a thin film resistor
KR101730784B1 (ko) * 2010-11-29 2017-04-26 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
US8980723B2 (en) 2012-06-15 2015-03-17 Texas Instruments Incorporated Multiple depth vias in an integrated circuit
JP6075114B2 (ja) * 2013-02-27 2017-02-08 ローム株式会社 半導体装置および半導体装置の製造方法
US9627467B2 (en) 2013-09-06 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion
US10269904B2 (en) 2014-10-31 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9893119B2 (en) 2016-03-15 2018-02-13 Texas Instruments Incorporated Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
WO2018004645A1 (en) 2016-07-01 2018-01-04 Intel Corporation Thin film resistor integrated into local interconnect production
US10276648B1 (en) * 2017-12-27 2019-04-30 Texas Instruments Incorporated Plasma treatment for thin film resistors on integrated circuits
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237524A (ja) 2001-02-09 2002-08-23 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
JP2005268749A (ja) 2004-02-19 2005-09-29 Ricoh Co Ltd 半導体装置
US20060118904A1 (en) 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co. Ltd. Fuse structure with charge protection circuit
JP2008021726A (ja) 2006-07-11 2008-01-31 Ricoh Co Ltd トリミング回路及び半導体装置
JP2009141266A (ja) 2007-12-10 2009-06-25 Nec Electronics Corp 半導体装置
JP2011108777A (ja) 2009-11-16 2011-06-02 Renesas Electronics Corp 半導体装置
JP2014207413A (ja) 2013-04-16 2014-10-30 富士電機株式会社 半導体装置
JP2016021586A (ja) 2015-09-07 2016-02-04 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US11424183B2 (en) 2022-08-23
US20200381358A1 (en) 2020-12-03
WO2020023743A1 (en) 2020-01-30
US10784193B2 (en) 2020-09-22
JP2021531667A (ja) 2021-11-18
CN112514048A (zh) 2021-03-16
EP3830865A1 (en) 2021-06-09
US20200035598A1 (en) 2020-01-30
EP3830865A4 (en) 2021-09-08

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