JP2021531667A5 - - Google Patents

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Publication number
JP2021531667A5
JP2021531667A5 JP2021527015A JP2021527015A JP2021531667A5 JP 2021531667 A5 JP2021531667 A5 JP 2021531667A5 JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021527015 A JP2021527015 A JP 2021527015A JP 2021531667 A5 JP2021531667 A5 JP 2021531667A5
Authority
JP
Japan
Prior art keywords
layer
tfr
vertical metal
metal
metal wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021527015A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021531667A (ja
JP7469815B2 (ja
Filing date
Publication date
Priority claimed from US16/047,889 external-priority patent/US10784193B2/en
Application filed filed Critical
Publication of JP2021531667A publication Critical patent/JP2021531667A/ja
Publication of JP2021531667A5 publication Critical patent/JP2021531667A5/ja
Application granted granted Critical
Publication of JP7469815B2 publication Critical patent/JP7469815B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021527015A 2018-07-27 2019-07-25 金属壁を備えた薄膜抵抗器を備える集積回路 Active JP7469815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/047,889 US10784193B2 (en) 2018-07-27 2018-07-27 IC with thin film resistor with metal walls
US16/047,889 2018-07-27
PCT/US2019/043432 WO2020023743A1 (en) 2018-07-27 2019-07-25 Ic with thin film resistor with metal walls

Publications (3)

Publication Number Publication Date
JP2021531667A JP2021531667A (ja) 2021-11-18
JP2021531667A5 true JP2021531667A5 (enExample) 2022-08-02
JP7469815B2 JP7469815B2 (ja) 2024-04-17

Family

ID=69178626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021527015A Active JP7469815B2 (ja) 2018-07-27 2019-07-25 金属壁を備えた薄膜抵抗器を備える集積回路

Country Status (5)

Country Link
US (2) US10784193B2 (enExample)
EP (1) EP3830865A4 (enExample)
JP (1) JP7469815B2 (enExample)
CN (1) CN112514048B (enExample)
WO (1) WO2020023743A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US20220102271A1 (en) * 2020-09-25 2022-03-31 Intel Corporation Tunable resistance thin film resistor for integrated circuits

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136334A (ja) * 1983-12-21 1985-07-19 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 集積回路用ヒユ−ズ素子及びその製造方法
JP2821316B2 (ja) * 1992-06-10 1998-11-05 株式会社デンソー 半導体装置及びその製造方法
US5389814A (en) * 1993-02-26 1995-02-14 International Business Machines Corporation Electrically blowable fuse structure for organic insulators
JPH07153910A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体基板上の絶縁構造
US6081014A (en) * 1998-11-06 2000-06-27 National Semiconductor Corporation Silicon carbide chrome thin-film resistor
US6475873B1 (en) * 2000-08-04 2002-11-05 Maxim Integrated Products, Inc. Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology
JP2002237524A (ja) 2001-02-09 2002-08-23 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
US6872655B2 (en) 2003-02-04 2005-03-29 Texas Instruments Incorporated Method of forming an integrated circuit thin film resistor
US7323751B2 (en) * 2003-06-03 2008-01-29 Texas Instruments Incorporated Thin film resistor integration in a dual damascene structure
JP2005268749A (ja) 2004-02-19 2005-09-29 Ricoh Co Ltd 半導体装置
US7193292B2 (en) * 2004-12-02 2007-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Fuse structure with charge protection circuit
US7403094B2 (en) 2005-04-11 2008-07-22 Texas Instruments Incorporated Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating
JP2008021726A (ja) 2006-07-11 2008-01-31 Ricoh Co Ltd トリミング回路及び半導体装置
US7838429B2 (en) 2007-07-18 2010-11-23 Texas Instruments Incorporated Method to manufacture a thin film resistor
JP2009141266A (ja) 2007-12-10 2009-06-25 Nec Electronics Corp 半導体装置
JP5561668B2 (ja) 2009-11-16 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
CN103229291B (zh) * 2010-11-29 2015-11-25 瑞萨电子株式会社 半导体器件
US8980723B2 (en) 2012-06-15 2015-03-17 Texas Instruments Incorporated Multiple depth vias in an integrated circuit
JP6075114B2 (ja) 2013-02-27 2017-02-08 ローム株式会社 半導体装置および半導体装置の製造方法
JP6115277B2 (ja) 2013-04-16 2017-04-19 富士電機株式会社 半導体装置
US9627467B2 (en) 2013-09-06 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion
US10269904B2 (en) * 2014-10-31 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9773736B2 (en) * 2015-01-28 2017-09-26 Infineon Technologies Ag Intermediate layer for copper structuring and methods of formation thereof
JP2016021586A (ja) 2015-09-07 2016-02-04 ルネサスエレクトロニクス株式会社 半導体装置
US9893119B2 (en) 2016-03-15 2018-02-13 Texas Instruments Incorporated Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
WO2018004645A1 (en) 2016-07-01 2018-01-04 Intel Corporation Thin film resistor integrated into local interconnect production
US10276648B1 (en) * 2017-12-27 2019-04-30 Texas Instruments Incorporated Plasma treatment for thin film resistors on integrated circuits
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls

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