CN112514048B - 具有金属壁的薄膜电阻器的集成电路 - Google Patents

具有金属壁的薄膜电阻器的集成电路

Info

Publication number
CN112514048B
CN112514048B CN201980050140.0A CN201980050140A CN112514048B CN 112514048 B CN112514048 B CN 112514048B CN 201980050140 A CN201980050140 A CN 201980050140A CN 112514048 B CN112514048 B CN 112514048B
Authority
CN
China
Prior art keywords
metal
layer
tfr
metal wall
semiconductor surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980050140.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN112514048A (zh
Inventor
Q·Z·洪
H·郭
B·J·蒂默
G·B·希恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN112514048A publication Critical patent/CN112514048A/zh
Application granted granted Critical
Publication of CN112514048B publication Critical patent/CN112514048B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201980050140.0A 2018-07-27 2019-07-25 具有金属壁的薄膜电阻器的集成电路 Active CN112514048B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/047,889 US10784193B2 (en) 2018-07-27 2018-07-27 IC with thin film resistor with metal walls
US16/047,889 2018-07-27
PCT/US2019/043432 WO2020023743A1 (en) 2018-07-27 2019-07-25 Ic with thin film resistor with metal walls

Publications (2)

Publication Number Publication Date
CN112514048A CN112514048A (zh) 2021-03-16
CN112514048B true CN112514048B (zh) 2026-05-05

Family

ID=69178626

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980050140.0A Active CN112514048B (zh) 2018-07-27 2019-07-25 具有金属壁的薄膜电阻器的集成电路

Country Status (5)

Country Link
US (2) US10784193B2 (enExample)
EP (1) EP3830865A4 (enExample)
JP (1) JP7469815B2 (enExample)
CN (1) CN112514048B (enExample)
WO (1) WO2020023743A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US20220102271A1 (en) * 2020-09-25 2022-03-31 Intel Corporation Tunable resistance thin film resistor for integrated circuits

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136334A (ja) * 1983-12-21 1985-07-19 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 集積回路用ヒユ−ズ素子及びその製造方法
JP2821316B2 (ja) * 1992-06-10 1998-11-05 株式会社デンソー 半導体装置及びその製造方法
US5389814A (en) * 1993-02-26 1995-02-14 International Business Machines Corporation Electrically blowable fuse structure for organic insulators
JPH07153910A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体基板上の絶縁構造
US6081014A (en) * 1998-11-06 2000-06-27 National Semiconductor Corporation Silicon carbide chrome thin-film resistor
US6475873B1 (en) * 2000-08-04 2002-11-05 Maxim Integrated Products, Inc. Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology
JP2002237524A (ja) 2001-02-09 2002-08-23 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
US6872655B2 (en) 2003-02-04 2005-03-29 Texas Instruments Incorporated Method of forming an integrated circuit thin film resistor
US7323751B2 (en) * 2003-06-03 2008-01-29 Texas Instruments Incorporated Thin film resistor integration in a dual damascene structure
JP2005268749A (ja) 2004-02-19 2005-09-29 Ricoh Co Ltd 半導体装置
US7193292B2 (en) * 2004-12-02 2007-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Fuse structure with charge protection circuit
US7403094B2 (en) 2005-04-11 2008-07-22 Texas Instruments Incorporated Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating
JP2008021726A (ja) 2006-07-11 2008-01-31 Ricoh Co Ltd トリミング回路及び半導体装置
US7838429B2 (en) 2007-07-18 2010-11-23 Texas Instruments Incorporated Method to manufacture a thin film resistor
JP2009141266A (ja) 2007-12-10 2009-06-25 Nec Electronics Corp 半導体装置
JP5561668B2 (ja) 2009-11-16 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
CN103229291B (zh) * 2010-11-29 2015-11-25 瑞萨电子株式会社 半导体器件
US8980723B2 (en) 2012-06-15 2015-03-17 Texas Instruments Incorporated Multiple depth vias in an integrated circuit
JP6075114B2 (ja) 2013-02-27 2017-02-08 ローム株式会社 半導体装置および半導体装置の製造方法
JP6115277B2 (ja) 2013-04-16 2017-04-19 富士電機株式会社 半導体装置
US9627467B2 (en) 2013-09-06 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion
US10269904B2 (en) * 2014-10-31 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9773736B2 (en) * 2015-01-28 2017-09-26 Infineon Technologies Ag Intermediate layer for copper structuring and methods of formation thereof
JP2016021586A (ja) 2015-09-07 2016-02-04 ルネサスエレクトロニクス株式会社 半導体装置
US9893119B2 (en) 2016-03-15 2018-02-13 Texas Instruments Incorporated Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
WO2018004645A1 (en) 2016-07-01 2018-01-04 Intel Corporation Thin film resistor integrated into local interconnect production
US10276648B1 (en) * 2017-12-27 2019-04-30 Texas Instruments Incorporated Plasma treatment for thin film resistors on integrated circuits
US10784193B2 (en) * 2018-07-27 2020-09-22 Texas Instruments Incorporated IC with thin film resistor with metal walls

Also Published As

Publication number Publication date
US11424183B2 (en) 2022-08-23
JP2021531667A (ja) 2021-11-18
WO2020023743A1 (en) 2020-01-30
EP3830865A1 (en) 2021-06-09
CN112514048A (zh) 2021-03-16
EP3830865A4 (en) 2021-09-08
JP7469815B2 (ja) 2024-04-17
US10784193B2 (en) 2020-09-22
US20200035598A1 (en) 2020-01-30
US20200381358A1 (en) 2020-12-03

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