JP2021530109A - 基板処理システムにおける基板支持体の動的温度制御 - Google Patents
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Abstract
Description
本願は、2018年7月5日出願の米国仮出願第62/694,171号の利益を主張する。上記出願の全ての開示は、本明細書に参照として援用される。
Claims (23)
- 基板処理システムのための温度制御式基板支持体であって、
NのゾーンおよびNの抵抗発熱体をそれぞれ備える基板支持体であって、Nは1より大きい整数であり、前記Nのゾーンの1つには温度センサが設置されている、基板支持体と、
コントローラであって、
動作中の前記Nの抵抗発熱体のNの抵抗を算出し、
前記基板処理システムの動作中に、
前記温度センサによって測定された前記Nのゾーンの前記1つにおける前記温度と、
前記Nの抵抗発熱体の前記Nの抵抗と、
N−1の抵抗比と、
に応答して、前記Nの抵抗発熱体のN−1への電力を調節するように構成された、コントローラと、
を備える、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記N−1の抵抗比は、前記基板支持体が均一な温度にあるときに、前記Nのゾーンにおける前記Nの抵抗発熱体の前記Nの抵抗をそれぞれ測定し、前記NのゾーンのN−1の前記Nの抵抗のN−1を、前記Nのゾーンの前記1つに対応する前記Nの抵抗の1つで割ることによって決定される、温度制御式基板支持体。 - 請求項2に記載の温度制御式基板支持体であって、
前記均一な温度は、大気温度に相当する、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記N−1のゾーンは、温度センサを備えない、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記コントローラは、
前記Nの抵抗発熱体に供給されるNの電圧をそれぞれ監視することと、
前記Nの抵抗発熱体に供給された前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出することと、
によって、動作中の前記Nの抵抗発熱体の前記Nの抵抗を算出する、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記コントローラは、
前記Nの抵抗発熱体に供給されるNの電流をそれぞれ監視することと、
前記Nの抵抗発熱体に供給された前記Nの電流に基づいて前記Nの抵抗をそれぞれ算出することと、
によって、動作中の前記Nの抵抗発熱体の前記Nの抵抗を算出する、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記コントローラは、
前記Nの抵抗発熱体に供給されるNの電流およびNの電圧をそれぞれ監視することと、
前記Nの抵抗発熱体に供給された前記Nの電流および前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出することと、
によって、動作中の前記Nの抵抗発熱体の前記Nの抵抗を算出する、温度制御式基板支持体。 - 請求項1に記載の温度制御式基板支持体であって、
前記コントローラは、前記温度センサによって測定された前記温度に基づいて、前記Nのゾーンの前記1つへの電力を制御するように構成されている、温度制御式基板支持体。 - 基板処理システムのための温度制御式基板支持体を製造する方法であって、
基板支持体のNのゾーンにNの抵抗発熱体を埋め込む工程と、
前記基板支持体の前記Nのゾーンの1つに温度センサを埋め込む工程と、
前記基板支持体の前記Nのゾーンにおける前記Nの抵抗発熱体のNの抵抗を測定する工程と、
前記Nの抵抗に基づいてN−1の抵抗比を決定する工程と、
前記Nの抵抗発熱体および前記温度センサにコントローラを接続する工程と、
前記基板処理システムの動作中に、
前記Nのゾーンの前記1つにおける測定された温度と、
前記Nの抵抗発熱体の前記Nの抵抗と、
前記N−1の抵抗比と、
に応答して、前記NのゾーンのN−1における前記Nの抵抗発熱体のN−1の温度をそれぞれ制御するように前記コントローラをプログラミングする工程と、
を含む、方法。 - 請求項9に記載の方法であって、
前記N−1の抵抗比は、
前記基板支持体が均一の温度であるときの前記抵抗発熱体の前記Nの抵抗をそれぞれ決定することと、
前記Nのゾーンの前記N−1の前記Nの抵抗の前記N−1を、前記Nのゾーンの前記1つに対応する前記Nの抵抗の1つで割ることと、
によって算出される、方法。 - 請求項9に記載の方法であって、
前記均一な温度は、大気温度に相当する、方法。 - 請求項9に記載の方法であって、
前記Nのゾーンの前記N−1は、温度センサを備えない、方法。 - 請求項9に記載の方法であって、
前記Nの抵抗発熱体の前記Nの抵抗を測定する工程は、
前記Nの抵抗発熱体に供給されるNの電圧をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 請求項9に記載の方法であって、
前記Nのゾーンの前記Nの抵抗を測定する工程は、
前記Nの抵抗発熱体に供給されるNの電流をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電流に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 請求項9に記載の方法であって、
動作中の前記Nのゾーンの前記Nの抵抗を測定する工程は、
Nの抵抗発熱体に供給されるNの電流およびNの電圧をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電流および前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 基板処理システムの基板支持体におけるゾーンの温度を制御するための方法であって、
前記基板処理システムの動作中に、Nのゾーンの1つに設置された温度センサを用いて、基板支持体の前記Nのゾーンの前記1つにおける温度を測定する工程であって、Nは1より大きい整数である、工程と、
前記基板処理システムの動作中に、前記Nのゾーンに設置されたNの抵抗発熱体のNの抵抗をそれぞれ測定する工程と、
前記基板処理システムの動作中に、
前記Nのゾーンの前記1つにおける前記測定された温度と、
前記Nの抵抗発熱体の前記Nの抵抗と、
N−1の抵抗比と、
に応答して前記NのゾーンのN−1における温度を制御するように、前記NのゾーンのN−1における前記Nの抵抗発熱体のN−1への電力をそれぞれ調節する工程と、
を含む、方法。 - 請求項16に記載の方法であって、
前記N−1の抵抗比は、
前記基板支持体が均一の温度であるときの前記Nの抵抗発熱体の前記Nの抵抗をそれぞれ決定することと、
前記NのゾーンのN−1の前記Nの抵抗のN−1を、前記Nのゾーンの前記1つに対応する前記Nの抵抗の1つで割ることと、
によって算出される、方法。 - 請求項17に記載の方法であって、
前記均一な温度は、大気温度に相当する、方法。 - 請求項16に記載の方法であって、
前記Nのゾーンの前記N−1は、温度センサを備えない、方法。 - 請求項16に記載の方法であって、
前記Nの抵抗発熱体の前記Nの抵抗を測定する工程は、
前記Nの抵抗発熱体に供給されるNの電圧をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 請求項16に記載の方法であって、
前記Nのゾーンの前記Nの抵抗を測定する工程は、
前記Nの抵抗発熱体に供給されるNの電流をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電流に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 請求項16に記載の方法であって、
動作中の前記Nのゾーンの前記Nの抵抗を測定する工程は、
Nの抵抗発熱体に供給されるNの電流およびNの電圧をそれぞれ監視する工程と、
前記Nの抵抗発熱体に供給された前記Nの電流および前記Nの電圧に基づいて前記Nの抵抗をそれぞれ算出する工程と、
を含む、方法。 - 請求項16に記載の方法であって、さらに、
前記温度センサによって測定された前記温度に基づいて、前記Nのゾーンの前記1つへの電力を制御する工程を含む、方法。
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