JP2021525814A5 - - Google Patents
Info
- Publication number
- JP2021525814A5 JP2021525814A5 JP2020566594A JP2020566594A JP2021525814A5 JP 2021525814 A5 JP2021525814 A5 JP 2021525814A5 JP 2020566594 A JP2020566594 A JP 2020566594A JP 2020566594 A JP2020566594 A JP 2020566594A JP 2021525814 A5 JP2021525814 A5 JP 2021525814A5
- Authority
- JP
- Japan
- Prior art keywords
- zinc
- nanostructure
- selenide
- source
- telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862677853P | 2018-05-30 | 2018-05-30 | |
| US62/677,853 | 2018-05-30 | ||
| PCT/US2019/033795 WO2019231828A1 (en) | 2018-05-30 | 2019-05-23 | METHOD FOR SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021525814A JP2021525814A (ja) | 2021-09-27 |
| JP2021525814A5 true JP2021525814A5 (https=) | 2022-05-24 |
| JP7357185B2 JP7357185B2 (ja) | 2023-10-06 |
Family
ID=67003643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020566594A Active JP7357185B2 (ja) | 2018-05-30 | 2019-05-23 | 青色発光ＺｎＳｅ１－ｘＴｅｘ合金ナノ結晶の合成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11753587B2 (https=) |
| EP (1) | EP3844240B1 (https=) |
| JP (1) | JP7357185B2 (https=) |
| KR (1) | KR102874538B1 (https=) |
| CN (1) | CN113039256B (https=) |
| WO (1) | WO2019231828A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3401380B1 (en) | 2017-05-11 | 2020-12-23 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal particles and devices including the same |
| CN110240896B (zh) | 2018-03-09 | 2024-03-05 | 三星电子株式会社 | 量子点以及包括其的电致发光器件和电子器件 |
| CN110858632B (zh) * | 2018-08-23 | 2024-07-12 | 三星电子株式会社 | 量子点器件和量子点 |
| US10978658B2 (en) * | 2018-08-24 | 2021-04-13 | Samsung Electronics Co., Ltd. | Light emitting device and display device including the same |
| KR102652436B1 (ko) | 2019-04-18 | 2024-03-27 | 삼성전자주식회사 | ZnTeSe 기반의 양자점 |
| KR102711311B1 (ko) * | 2019-04-18 | 2024-09-26 | 삼성전자주식회사 | 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
| KR102711312B1 (ko) | 2019-04-18 | 2024-09-26 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
| US11312905B2 (en) | 2019-07-11 | 2022-04-26 | Nanosys, Inc. | Blue-emitting nanocrystals with cubic shape and fluoride passivation |
| KR102871616B1 (ko) | 2019-08-12 | 2025-10-15 | 소에이 가가쿠 고교 가부시키가이샤 | 반치전폭이 낮은 청색 방출 ZnSe1-xTex 합금 나노결정의 합성 |
| KR102881894B1 (ko) | 2019-09-11 | 2025-11-05 | 소에이 가가쿠 고교 가부시키가이샤 | 잉크젯 프린팅용 나노구조체 잉크 조성물들 |
| WO2021054355A1 (ja) * | 2019-09-20 | 2021-03-25 | Ｎｓマテリアルズ株式会社 | 量子ドット及び、その製造方法 |
| WO2021178491A1 (en) * | 2020-03-03 | 2021-09-10 | Nanosys, Inc. | Blue-emitting nanocrystals with cubic shape and group iv metal fluoride passivation |
| KR102897920B1 (ko) * | 2020-08-14 | 2025-12-09 | 삼성디스플레이 주식회사 | 반도체 나노입자, 이를 포함한 색변환 부재 및 이를 포함한 표시 장치 |
| KR102573072B1 (ko) * | 2020-11-18 | 2023-08-31 | 주식회사 한솔케미칼 | 양자점의 제조방법, 및 이에 의해 제조된 양자점 |
| KR102664869B1 (ko) * | 2020-12-17 | 2024-05-17 | 한국전자통신연구원 | 표시 장치 |
| US20230174861A1 (en) * | 2021-12-03 | 2023-06-08 | Applied Materials, Inc. | Narrowband quantum dots and methods of making them |
| KR20260037168A (ko) | 2022-01-19 | 2026-03-17 | 소에이 가가쿠 고교 가부시키가이샤 | Uv-경화성 양자 도트 제형 |
| KR20240162142A (ko) | 2022-03-25 | 2024-11-14 | 소에이 가가쿠 고교 가부시키가이샤 | 나노구조체를 포함하는 실리카 복합 마이크로입자 |
| CN117778011B (zh) * | 2023-12-25 | 2025-09-26 | 利亚德光电股份有限公司 | 改性锌基纳米片及其制备方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
| US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
| US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
| US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
| AU2003268487A1 (en) | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanocomposites |
| US6949206B2 (en) | 2002-09-05 | 2005-09-27 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
| KR100657891B1 (ko) | 2003-07-19 | 2006-12-14 | 삼성전자주식회사 | 반도체 나노결정 및 그 제조방법 |
| KR100796122B1 (ko) * | 2003-09-09 | 2008-01-21 | 삼성전자주식회사 | 화합물 반도체 나노결정의 표면 처리를 통한 양자효율 향상 |
| JP4789809B2 (ja) | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | ナノ結晶をドーピングしたマトリックス |
| US7645397B2 (en) | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
| CN102064102B (zh) | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
| US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
| JP4817298B2 (ja) | 2005-03-17 | 2011-11-16 | 独立行政法人産業技術総合研究所 | 半導体ナノ粒子を分散した青色発光蛍光体 |
| US20100110728A1 (en) | 2007-03-19 | 2010-05-06 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
| US20100155749A1 (en) | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
| WO2008115498A1 (en) | 2007-03-19 | 2008-09-25 | Nanosys, Inc. | Methods for encapsulating nanocrystals |
| WO2010040032A2 (en) * | 2008-10-03 | 2010-04-08 | Life Technologies Corporation | Methods for preparation of znte nanocrystals |
| WO2010126606A2 (en) | 2009-05-01 | 2010-11-04 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
| KR101978691B1 (ko) * | 2010-09-16 | 2019-05-15 | 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시 티 오브 예루살렘 엘티디. | 이방성 반도체 나노입자 |
| EP2638321B1 (en) | 2010-11-10 | 2019-05-08 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
| US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
| TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
| JP6250785B2 (ja) | 2013-03-14 | 2017-12-20 | ナノシス・インク． | 無溶媒量子ドット交換方法 |
| CN105555706B (zh) | 2013-07-01 | 2020-10-16 | 耶路撒冷希伯来大学伊森姆研究发展有限公司 | 胶态半导体金属硫族化物纳米结构 |
| CA2949556C (en) | 2014-05-29 | 2023-03-21 | Crystalplex Corporation | Dispersion system for quantum dots |
| KR102446858B1 (ko) * | 2015-08-07 | 2022-09-23 | 삼성디스플레이 주식회사 | 양자점 제조 방법 |
| EP3347433A1 (en) | 2015-09-09 | 2018-07-18 | Nanosys, Inc. | Highly luminescent cadmium-free nanocrystals with blue emission |
| JP2018115315A (ja) | 2017-01-18 | 2018-07-26 | 三菱マテリアル株式会社 | 可視蛍光を発するＣｄを含まないコロイダル量子ドット及びその製造方法 |
| EP3401380B1 (en) * | 2017-05-11 | 2020-12-23 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal particles and devices including the same |
| CN110240896B (zh) * | 2018-03-09 | 2024-03-05 | 三星电子株式会社 | 量子点以及包括其的电致发光器件和电子器件 |
-
2019
- 2019-05-23 EP EP19733229.9A patent/EP3844240B1/en active Active
- 2019-05-23 WO PCT/US2019/033795 patent/WO2019231828A1/en not_active Ceased
- 2019-05-23 CN CN201980049102.3A patent/CN113039256B/zh active Active
- 2019-05-23 JP JP2020566594A patent/JP7357185B2/ja active Active
- 2019-05-23 KR KR1020207037273A patent/KR102874538B1/ko active Active
- 2019-05-24 US US16/422,242 patent/US11753587B2/en active Active
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