JP2021520630A - Ｈ２プラズマを用いた流動性膜の硬化 - Google Patents

Ｈ２プラズマを用いた流動性膜の硬化 Download PDF

Info

Publication number
JP2021520630A
JP2021520630A JP2020553607A JP2020553607A JP2021520630A JP 2021520630 A JP2021520630 A JP 2021520630A JP 2020553607 A JP2020553607 A JP 2020553607A JP 2020553607 A JP2020553607 A JP 2020553607A JP 2021520630 A JP2021520630 A JP 2021520630A
Authority
JP
Japan
Prior art keywords
plasma
substrate
silicon layer
amorphous silicon
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020553607A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021520630A5 (https=
JPWO2019195188A5 (https=
Inventor
シーシー チアン，
シーシー チアン，
プラミット マンナ，
プラミット マンナ，
アブヒジット バス マリック，
アブヒジット バス マリック，
スレッシュ チャンド セス，
スレッシュ チャンド セス，
シュリニヴァス ディ． ネマニ，
シュリニヴァス ディ． ネマニ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2021520630A publication Critical patent/JP2021520630A/ja
Publication of JP2021520630A5 publication Critical patent/JP2021520630A5/ja
Publication of JPWO2019195188A5 publication Critical patent/JPWO2019195188A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2020553607A 2018-04-03 2019-04-01 Ｈ２プラズマを用いた流動性膜の硬化 Pending JP2021520630A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN201841012612 2018-04-03
IN201841012612 2018-04-03
PCT/US2019/025227 WO2019195188A1 (en) 2018-04-03 2019-04-01 Flowable film curing using h2 plasma

Publications (3)

Publication Number Publication Date
JP2021520630A true JP2021520630A (ja) 2021-08-19
JP2021520630A5 JP2021520630A5 (https=) 2022-04-08
JPWO2019195188A5 JPWO2019195188A5 (https=) 2022-04-08

Family

ID=68100158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020553607A Pending JP2021520630A (ja) 2018-04-03 2019-04-01 Ｈ２プラズマを用いた流動性膜の硬化

Country Status (6)

Country Link
US (1) US12054827B2 (https=)
JP (1) JP2021520630A (https=)
KR (2) KR20250041199A (https=)
CN (1) CN112219261A (https=)
SG (1) SG11202009405VA (https=)
WO (1) WO2019195188A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11202112688QA (en) 2019-06-08 2021-12-30 Applied Materials Inc Low deposition rates for flowable pecvd
CN111725297B (zh) * 2020-06-08 2023-06-02 武汉华星光电半导体显示技术有限公司 有源层结构及其制作方法
US11562902B2 (en) * 2020-07-19 2023-01-24 Applied Materials, Inc. Hydrogen management in plasma deposited films
US11615966B2 (en) * 2020-07-19 2023-03-28 Applied Materials, Inc. Flowable film formation and treatments
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11887811B2 (en) 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US12412741B2 (en) * 2020-11-18 2025-09-09 Applied Materials, Inc. Silicon oxide gap fill using capacitively coupled plasmas
KR20220102569A (ko) * 2021-01-13 2022-07-20 에이에스엠 아이피 홀딩 비.브이. 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
KR20250003043A (ko) * 2023-06-30 2025-01-07 세메스 주식회사 안테나 유닛 및 이를 포함하는 기판 처리 장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562913A (ja) * 1991-09-04 1993-03-12 Canon Inc 堆積膜の成膜方法
JPH0613329A (ja) * 1992-06-25 1994-01-21 Canon Inc 半導体装置及び半導体製造装置及び製造方法
JPH06267861A (ja) * 1993-03-15 1994-09-22 Sanyo Electric Co Ltd 半導体薄膜の形成方法
JP2009044171A (ja) * 1994-06-15 2009-02-26 Seiko Epson Corp 薄膜半導体装置の製造方法
US20120202315A1 (en) * 2011-02-03 2012-08-09 Applied Materials, Inc. In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers
WO2013021426A1 (ja) * 2011-08-10 2013-02-14 パナソニック株式会社 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
JP2015521375A (ja) * 2012-04-30 2015-07-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 流動性膜のための改善された緻密化
US20170372919A1 (en) * 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable Amorphous Silicon Films For Gapfill Applications
JP2018512727A (ja) * 2015-02-23 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高品質薄膜を形成するための周期的連続処理

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4223012B2 (ja) * 2005-02-09 2009-02-12 富士通マイクロエレクトロニクス株式会社 絶縁膜の形成方法、多層構造の形成方法および半導体装置の製造方法
US20070299239A1 (en) * 2006-06-27 2007-12-27 Air Products And Chemicals, Inc. Curing Dielectric Films Under A Reducing Atmosphere
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
US20120083133A1 (en) 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
KR101901361B1 (ko) * 2011-12-02 2018-09-27 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법
US9048099B2 (en) * 2013-05-09 2015-06-02 Applied Materials, Inc. Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal
US9818606B2 (en) 2013-05-31 2017-11-14 Applied Materials, Inc. Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
US9130014B2 (en) 2013-11-21 2015-09-08 United Microelectronics Corp. Method for fabricating shallow trench isolation structure
US9190290B2 (en) * 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
CN104157552B (zh) * 2014-08-15 2017-04-12 上海华力微电子有限公司 改善多孔低介电常数材料垂直均匀性的方法
US9777378B2 (en) 2015-01-07 2017-10-03 Applied Materials, Inc. Advanced process flow for high quality FCVD films
US9576788B2 (en) * 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
CN106373908B (zh) * 2015-07-20 2019-07-02 成均馆大学校产学协力团 多晶硅沉积方法及用于其的沉积装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562913A (ja) * 1991-09-04 1993-03-12 Canon Inc 堆積膜の成膜方法
JPH0613329A (ja) * 1992-06-25 1994-01-21 Canon Inc 半導体装置及び半導体製造装置及び製造方法
JPH06267861A (ja) * 1993-03-15 1994-09-22 Sanyo Electric Co Ltd 半導体薄膜の形成方法
JP2009044171A (ja) * 1994-06-15 2009-02-26 Seiko Epson Corp 薄膜半導体装置の製造方法
US20120202315A1 (en) * 2011-02-03 2012-08-09 Applied Materials, Inc. In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers
WO2013021426A1 (ja) * 2011-08-10 2013-02-14 パナソニック株式会社 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
JP2015521375A (ja) * 2012-04-30 2015-07-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 流動性膜のための改善された緻密化
JP2018512727A (ja) * 2015-02-23 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高品質薄膜を形成するための周期的連続処理
US20170372919A1 (en) * 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable Amorphous Silicon Films For Gapfill Applications

Also Published As

Publication number Publication date
WO2019195188A1 (en) 2019-10-10
KR20200128445A (ko) 2020-11-12
KR20250041199A (ko) 2025-03-25
US12054827B2 (en) 2024-08-06
CN112219261A (zh) 2021-01-12
SG11202009405VA (en) 2020-10-29
US20210025058A1 (en) 2021-01-28

Similar Documents

Publication Publication Date Title
JP2021520630A (ja) Ｈ２プラズマを用いた流動性膜の硬化
US10699903B2 (en) Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film
KR102233755B1 (ko) SiC막의 성막 방법
JP7126381B2 (ja) 成膜装置および成膜方法
JP7711312B2 (ja) 指向性選択的堆積
JP2016503966A (ja) 高密度プラズマを実施する窒化ケイ素間隙充填
JP2005089823A (ja) 成膜装置および成膜方法
KR102184690B1 (ko) 오목부의 매립 방법 및 처리 장치
US10483102B2 (en) Surface modification to improve amorphous silicon gapfill
US20260114195A1 (en) Large area gapfill using volumetric expansion
KR102946687B1 (ko) 고 종횡비 갭 충전에서 시임 제거
US20230386829A1 (en) Low temperature silicon oxide gap fill
TW202445663A (zh) 緻密的無縫矽間隙填充製程
US20240332001A1 (en) Atomic layer deposition of silicon-carbon-and-nitrogen-containing materials
TW202514725A (zh) 緻密無縫之含矽材料間隙填充製程
KR20260057490A (ko) 갭 충전을 위한 히드록실화를 사용한 이음매 성능 개선
KR20030064489A (ko) 플라즈마를 이용한 화학기상증착장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220331

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220331

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230411

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230711

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230912