JP2021520630A5 - - Google Patents
Info
- Publication number
- JP2021520630A5 JP2021520630A5 JP2020553607A JP2020553607A JP2021520630A5 JP 2021520630 A5 JP2021520630 A5 JP 2021520630A5 JP 2020553607 A JP2020553607 A JP 2020553607A JP 2020553607 A JP2020553607 A JP 2020553607A JP 2021520630 A5 JP2021520630 A5 JP 2021520630A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- plasma
- amorphous silicon
- approximately
- processing
- Prior art date
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN201841012612 | 2018-04-03 | ||
| IN201841012612 | 2018-04-03 | ||
| PCT/US2019/025227 WO2019195188A1 (en) | 2018-04-03 | 2019-04-01 | Flowable film curing using h2 plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021520630A JP2021520630A (ja) | 2021-08-19 |
| JP2021520630A5 true JP2021520630A5 (https=) | 2022-04-08 |
| JPWO2019195188A5 JPWO2019195188A5 (https=) | 2022-04-08 |
Family
ID=68100158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020553607A Pending JP2021520630A (ja) | 2018-04-03 | 2019-04-01 | Ｈ２プラズマを用いた流動性膜の硬化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12054827B2 (https=) |
| JP (1) | JP2021520630A (https=) |
| KR (2) | KR20250041199A (https=) |
| CN (1) | CN112219261A (https=) |
| SG (1) | SG11202009405VA (https=) |
| WO (1) | WO2019195188A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11202112688QA (en) | 2019-06-08 | 2021-12-30 | Applied Materials Inc | Low deposition rates for flowable pecvd |
| CN111725297B (zh) * | 2020-06-08 | 2023-06-02 | 武汉华星光电半导体显示技术有限公司 | 有源层结构及其制作方法 |
| US11562902B2 (en) * | 2020-07-19 | 2023-01-24 | Applied Materials, Inc. | Hydrogen management in plasma deposited films |
| US11615966B2 (en) * | 2020-07-19 | 2023-03-28 | Applied Materials, Inc. | Flowable film formation and treatments |
| US12142459B2 (en) * | 2020-09-08 | 2024-11-12 | Applied Materials, Inc. | Single chamber flowable film formation and treatments |
| US11887811B2 (en) | 2020-09-08 | 2024-01-30 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
| US11699571B2 (en) | 2020-09-08 | 2023-07-11 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
| US12412741B2 (en) * | 2020-11-18 | 2025-09-09 | Applied Materials, Inc. | Silicon oxide gap fill using capacitively coupled plasmas |
| KR20220102569A (ko) * | 2021-01-13 | 2022-07-20 | 에이에스엠 아이피 홀딩 비.브이. | 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치 |
| KR20250003043A (ko) * | 2023-06-30 | 2025-01-07 | 세메스 주식회사 | 안테나 유닛 및 이를 포함하는 기판 처리 장치 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0562913A (ja) * | 1991-09-04 | 1993-03-12 | Canon Inc | 堆積膜の成膜方法 |
| JPH0613329A (ja) * | 1992-06-25 | 1994-01-21 | Canon Inc | 半導体装置及び半導体製造装置及び製造方法 |
| JP2945234B2 (ja) * | 1993-03-15 | 1999-09-06 | 三洋電機株式会社 | 半導体薄膜の形成方法 |
| KR100327086B1 (ko) * | 1994-06-15 | 2002-03-06 | 구사마 사부로 | 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기 |
| JP4223012B2 (ja) * | 2005-02-09 | 2009-02-12 | 富士通マイクロエレクトロニクス株式会社 | 絶縁膜の形成方法、多層構造の形成方法および半導体装置の製造方法 |
| US20070299239A1 (en) * | 2006-06-27 | 2007-12-27 | Air Products And Chemicals, Inc. | Curing Dielectric Films Under A Reducing Atmosphere |
| WO2009059238A1 (en) | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Plasma treatment between deposition processes |
| US20120083133A1 (en) | 2010-10-05 | 2012-04-05 | Applied Materials, Inc. | Amine curing silicon-nitride-hydride films |
| US20120202315A1 (en) * | 2011-02-03 | 2012-08-09 | Applied Materials, Inc. | In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers |
| CN103053026A (zh) * | 2011-08-10 | 2013-04-17 | 松下电器产业株式会社 | 薄膜晶体管器件以及薄膜晶体管器件的制造方法 |
| KR101901361B1 (ko) * | 2011-12-02 | 2018-09-27 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| US20130288485A1 (en) * | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US9048099B2 (en) * | 2013-05-09 | 2015-06-02 | Applied Materials, Inc. | Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal |
| US9818606B2 (en) | 2013-05-31 | 2017-11-14 | Applied Materials, Inc. | Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture |
| US9029272B1 (en) | 2013-10-31 | 2015-05-12 | Asm Ip Holding B.V. | Method for treating SiOCH film with hydrogen plasma |
| US9130014B2 (en) | 2013-11-21 | 2015-09-08 | United Microelectronics Corp. | Method for fabricating shallow trench isolation structure |
| US9190290B2 (en) * | 2014-03-31 | 2015-11-17 | Applied Materials, Inc. | Halogen-free gas-phase silicon etch |
| CN104157552B (zh) * | 2014-08-15 | 2017-04-12 | 上海华力微电子有限公司 | 改善多孔低介电常数材料垂直均匀性的方法 |
| US9777378B2 (en) | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
| US10041167B2 (en) * | 2015-02-23 | 2018-08-07 | Applied Materials, Inc. | Cyclic sequential processes for forming high quality thin films |
| US9576788B2 (en) * | 2015-04-24 | 2017-02-21 | Applied Materials, Inc. | Cleaning high aspect ratio vias |
| CN106373908B (zh) * | 2015-07-20 | 2019-07-02 | 成均馆大学校产学协力团 | 多晶硅沉积方法及用于其的沉积装置 |
| WO2017223323A1 (en) * | 2016-06-25 | 2017-12-28 | Applied Materials, Inc. | Flowable amorphous silicon films for gapfill applications |
-
2019
- 2019-04-01 WO PCT/US2019/025227 patent/WO2019195188A1/en not_active Ceased
- 2019-04-01 KR KR1020257009224A patent/KR20250041199A/ko active Pending
- 2019-04-01 CN CN201980035901.5A patent/CN112219261A/zh active Pending
- 2019-04-01 US US17/041,403 patent/US12054827B2/en active Active
- 2019-04-01 JP JP2020553607A patent/JP2021520630A/ja active Pending
- 2019-04-01 SG SG11202009405VA patent/SG11202009405VA/en unknown
- 2019-04-01 KR KR1020207031432A patent/KR20200128445A/ko not_active Ceased
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