JP2021515384A - 静電チャックヒータおよびその製造方法 - Google Patents
静電チャックヒータおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims description 71
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 1
- 238000003754 machining Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 51
- 230000008021 deposition Effects 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
- H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
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Abstract
Description
Claims (16)
- 接地電極、および前記接地電極の外側に一定距離離れて形成された静電チャック電極を含む静電チャックヒータ。
- 前記接地電極および前記静電チャック電極は同一平面上に形成されていることを特徴とする、請求項1に記載の静電チャックヒータ。
- 前記静電チャック電極は、シートタイプ(SHEET TYPE)またはメッシュタイプ(MESH TYPE)のいずれか一つであることを特徴とする、請求項1に記載の静電チャックヒータ。
- 前記接地電極は、285mmの直径を有する円板形状であり、
前記静電チャック電極は、内側直径が290mm、外側直径が320mmのリング形状であることを特徴とする、請求項1に記載の静電チャックヒータ。 - 前記静電チャック電極は0.2mmの厚さを有することを特徴とする、請求項1に記載の静電チャックヒータ。
- 前記静電チャック電極に電力を供給するための静電チャック連結部材をさらに含み、
前記静電チャック連結部材の素材はモリブデン(Mo)であることを特徴とする、請求項1に記載の静電チャックヒータ。 - 前記静電チャック連結部材は、シートタイプ(SHEET TYPE)またはメッシュタイプ(MESH TYPE)のいずれか一つであることを特徴とする、請求項6に記載の静電チャックヒータ。
- 第1セラミック粉末層と第2セラミック粉末層との間に、接地電極および静電チャック電極が埋め込まれたセラミック成形体が介在するセラミック粉末層構造を成形するステップ、および
前記セラミック粉末層構造を焼結するステップを含み、
前記静電チャック電極は前記接地電極の外側に一定距離離れて形成されることを特徴とする静電チャックヒータの製造方法。 - 前記セラミック粉末層構造は、前記第2セラミック粉末層と第3セラミック粉末層との間に発熱体をさらに含むことを特徴とする、請求項8に記載の静電チャックヒータの製造方法。
- 前記セラミック成形体の成形ステップは、
成形体の加工ステップ、
静電チャック連結部材の提供ステップ、
接地ロッド連結部材および静電チャックロッド連結部材の提供ステップ、および
前記接地電極および前記静電チャック電極の提供ステップを含むことを特徴とする、請求項8に記載の静電チャックヒータの製造方法。 - 前記接地電極および前記静電チャック電極は同一平面上に提供されることを特徴とする、請求項10に記載の静電チャックヒータ。
- 前記静電チャック電極は、シートタイプ(SHEET TYPE)またはメッシュタイプ(MESH TYPE)のいずれか一つであることを特徴とする、請求項10に記載の静電チャックヒータ。
- 前記接地電極は、285mmの直径を有する円板形状であり、
前記静電チャック電極は、内側直径が290mm、外側直径が320mmのリング形状であることを特徴とする、請求項10に記載の静電チャックヒータ。 - 前記静電チャック電極は0.2mmの厚さを有することを特徴とする、請求項10に記載の静電チャックヒータ。
- 前記静電チャック連結部材の素材はモリブデン(Mo)であることを特徴とする、請求項10に記載の静電チャックヒータ。
- 前記静電チャック連結部材は、シートタイプ(SHEET TYPE)またはメッシュタイプ(MESH TYPE)のいずれか一つであることを特徴とする、請求項10に記載の静電チャックヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020180024661A KR102450476B1 (ko) | 2018-02-28 | 2018-02-28 | 정전척 히터 및 그 제조 방법 |
KR10-2018-0024661 | 2018-02-28 | ||
PCT/KR2019/001029 WO2019168271A1 (ko) | 2018-02-28 | 2019-01-24 | 정전척 히터 및 그 제조 방법 |
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JP2021515384A true JP2021515384A (ja) | 2021-06-17 |
JP7337064B2 JP7337064B2 (ja) | 2023-09-01 |
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US (1) | US20210242062A1 (ja) |
JP (1) | JP7337064B2 (ja) |
KR (1) | KR102450476B1 (ja) |
CN (1) | CN111480221B (ja) |
WO (1) | WO2019168271A1 (ja) |
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WO2020117371A1 (en) * | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Ground electrode formed in an electrostatic chuck for a plasma processing chamber |
KR20210047462A (ko) * | 2019-10-22 | 2021-04-30 | 주식회사 미코세라믹스 | 세라믹 히터 및 그 제조방법 |
KR20210047464A (ko) * | 2019-10-22 | 2021-04-30 | 주식회사 미코세라믹스 | 세라믹 히터 및 그 제조방법 |
KR20210143653A (ko) * | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2022060859A (ja) * | 2020-10-05 | 2022-04-15 | キオクシア株式会社 | 静電チャック装置及び半導体製造装置 |
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- 2019-01-24 US US16/770,006 patent/US20210242062A1/en active Pending
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- 2019-01-24 CN CN201980006360.3A patent/CN111480221B/zh active Active
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JP2000277595A (ja) * | 1999-03-25 | 2000-10-06 | Ibiden Co Ltd | 静電チャック |
JP2001319967A (ja) * | 2000-05-11 | 2001-11-16 | Ibiden Co Ltd | セラミック基板の製造方法 |
JP2002293655A (ja) * | 2001-03-29 | 2002-10-09 | Ngk Insulators Ltd | 金属端子とセラミック部材との接合構造、金属部材とセラミック部材との接合構造および金属端子とセラミック部材との接合材 |
JP2004259721A (ja) * | 2003-02-24 | 2004-09-16 | Hitachi High-Technologies Corp | 試料処理装置 |
JP2007311399A (ja) * | 2006-05-16 | 2007-11-29 | Sumitomo Osaka Cement Co Ltd | 静電チャック |
JP2008251737A (ja) * | 2007-03-29 | 2008-10-16 | Tomoegawa Paper Co Ltd | 静電チャック装置用電極部材ならびにそれを用いた静電チャック装置および静電吸着解除方法 |
JP2009170509A (ja) * | 2008-01-11 | 2009-07-30 | Hitachi High-Technologies Corp | ヒータ内蔵静電チャックを備えたプラズマ処理装置 |
JP2015135960A (ja) * | 2013-12-20 | 2015-07-27 | ラム リサーチ コーポレーションLam Research Corporation | デクランプ電極を備えた静電チャックと脱離方法 |
JP2017212375A (ja) * | 2016-05-26 | 2017-11-30 | 日本特殊陶業株式会社 | 静電チャック又は電極内蔵サセプタ |
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JP7337064B2 (ja) | 2023-09-01 |
KR20190103795A (ko) | 2019-09-05 |
US20210242062A1 (en) | 2021-08-05 |
KR102450476B1 (ko) | 2022-10-05 |
CN111480221A (zh) | 2020-07-31 |
WO2019168271A1 (ko) | 2019-09-06 |
CN111480221B (zh) | 2024-04-05 |
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