CN111480221A - 静电吸盘加热器及其制造方法 - Google Patents

静电吸盘加热器及其制造方法 Download PDF

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CN111480221A
CN111480221A CN201980006360.3A CN201980006360A CN111480221A CN 111480221 A CN111480221 A CN 111480221A CN 201980006360 A CN201980006360 A CN 201980006360A CN 111480221 A CN111480221 A CN 111480221A
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郑哲镐
崔晋荣
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Meike Ceramic Technology Co ltd
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Abstract

本发明涉及静电吸盘加热器及其制造方法,更详细而言,涉及一种包括接地电极及向所述接地电极外侧隔开既定距离形成的静电吸盘电极的静电吸盘加热器,通过减小晶片边缘翘起现象,晶片等对象体加热面各位置的温度偏差显著减少,具有能够提高加热面的温度均一性(TEMPERATURE UNIFORMITY)的效果。

Description

静电吸盘加热器及其制造方法
技术领域
本发明涉及静电吸盘加热器及其制造方法,涉及一种为了提高晶片吸附均一性而包括在向接地电极外侧隔开既定距离的位置形成的静电吸盘电极的静电吸盘加热器及其制造方法。
背景技术
陶瓷加热器用于在既定的加热温度下,对半导体晶片、玻璃基板、柔性基板等多样目的的热处理对象体进行热处理。为了半导体晶片处理,陶瓷加热器也与静电吸盘功能结合而用作静电吸盘加热器。而且,在基于陶瓷加热器的薄膜工序时,为了去除陶瓷加热器内部产生的残留电流,还埋设接地电极。
图1是图示静电吸盘加热器的一个示例的图。
如果参照图1,陶瓷加热器一般包括从外部电极接受供电并发热的陶瓷板。陶瓷板100包括埋设于陶瓷烧结体的具有既定电阻的发热体。而且,所述陶瓷板可以包括接地电极和/或静电吸盘电极。
图2是图示以往发明的包括接地电极的陶瓷加热器的一个示例的图。
如果参考图2,以往发明的陶瓷加热器为了固定晶片(WAFER)而在陶瓷加热器上部面加工有晶片大小的穴(POKET),工序气体流动时,借助于晶片边缘的错层而产生气体涡流,存在降低晶片边缘部分的吸附均一性(DEPOSITION UNIFORMITY)的问题。其结果,发生连晶片温度均一性也下降的问题。
发明内容
技术问题
本发明目的在于解决前述问题及其他问题。
又一目的在于提供一种静电吸盘加热器及其制造方法,用于防止在工序时因气体流动导致的晶片边缘翘起现象,增加晶片的吸附均一性,改善温度均一性。
技术方案
为了达成所述又一目的,根据本发明一个方面,提供一种包括接地电极及向所述接地电极外侧隔开既定距离形成的静电吸盘电极的静电吸盘加热器。
而且,根据本发明一个方面,所述接地电极及所述静电吸盘电极可以在同一平面上形成。
另外,根据本发明一个方面,所述静电吸盘电极可以为片型或网型中任意一种。
另外,根据本发明一个方面,所述接地电极可以为具有285mm直径的圆板形状,所述静电吸盘电极可以为内径290mm、外径320mm的环形状。
另外,根据本发明一个方面,所述静电吸盘电极可以具有0.2mm的厚度。
另外,根据本发明一个方面,可以还包括用于向所述静电吸盘电极供应电力的静电吸盘连接构件,且所述静电吸盘连接构件的材料可以为钼(Mo)。
另外,根据本发明一个方面,所述静电吸盘连接构件可以为片型或网型中任意一种。
而且,根据本发明又一方面,提供一种静电吸盘加热器制造方法,其特征在于,包括:对在第一陶瓷粉末层及第二陶瓷粉末层之间插入有埋设了接地电极及静电吸盘电极的陶瓷成型体的陶瓷粉末层结构进行成型的步骤;及烧结所述陶瓷粉末层结构的步骤;且所述静电吸盘电极向所述接地电极外侧隔开既定距离形成。
另外,根据本发明一个方面,所述陶瓷粉末层结构在所述第二陶瓷粉末层及第三陶瓷粉末层之间可以还包括发热体。
另外,根据本发明一个方面,所述陶瓷成型体的成型步骤可以包括:
成型体加工步骤;静电吸盘连接构件提供步骤;接地棒连接构件及静电吸盘棒连接构件提供步骤;及所述接地电极及所述静电吸盘电极提供步骤。
另外,根据本发明一个方面,所述接地电极及所述静电吸盘电极可以在同一平面上提供。
另外,根据本发明一个方面,所述静电吸盘电极可以为片型或网型中任意一种。
另外,根据本发明一个方面,所述接地电极可以为具有285mm直径的圆板形状,所述静电吸盘电极可以为内径290mm、外径320mm的环形状。
另外,根据本发明一个方面,所述静电吸盘电极可以具有0.2mm的厚度。
另外,根据本发明的一个方面,所述静电吸盘连接构件的材料可以为钼(Mo)。
另外,根据本发明一个方面,所述静电吸盘连接构件可以为片型或网型中任意一种。
有益效果
根据本发明的静电吸盘加热器,借助埋设于静电吸盘加热器边缘的静电吸盘电极,具有使得能够提高位于静电吸盘上部的晶片的吸附均一性,对晶片等对象体加热面施加均匀的热的效果。换言之,减小在工序时因气体流动而发生的晶片边缘翘起现象,从而晶片等对象体加热面各位置的温度偏差显著减小,具有可以提高加热面的温度均一性的效果。
附图说明
图1是图示静电吸盘加热器的一个示例的图。
图2是图示以往发明的包括接地电极的陶瓷加热器的一个示例的图。
图3是图示本发明一个实施例的静电吸盘加热器的结构的剖面图。
图4是测量并图示以往技术的陶瓷加热器与本发明的静电吸盘加热器的边缘温度的图表。
图5是测量并图示本发明一个实施例的静电吸盘加热器的静电吸盘电极类型(TYPE)、接地电极直径、不同静电吸盘电极直径的晶片边缘温度变化范围的图。
图6是图示本发明一个实施例的静电吸盘加热器的制造方法的顺序图。
图7是用于说明本发明一个实施例的静电吸盘加热器的制造方法的图。
图8是图示本发明一个实施例的陶瓷成型体制造方法的顺序图。
图9至图13是用于说明本发明一个实施例的陶瓷成型体制造方法的图。
图14是图示本发明一个实施例的陶瓷成型体的上/下部形状的图。
具体实施方式
下面参照附图,对本发明进行详细说明。此时,在各个图中,相同的构成要素尽可能用相同的标记代表。另外,省略对已经公知的功能和/或构成的详细说明。以下公开的内容重点说明理解多样实施例的动作所需的部分,省略对可能混淆本说明要旨的要素的说明。另外,附图的一部分构成要素可以夸张、省略或概略地图示。各构成要素的大小并非全部反映实际大小,因此,在此记载的内容不由各个图中绘制的构成要素的相对大小或间隔所限制。
另外,在本发明中,所谓“层叠”,用作规定各层的相对位置关系的意义。“A层上的B层”字样的表述,表现了A层与B层的相对位置关系,不要求A层与B层必须接触,也可以在其之间插入有第三层。类似地,“在A层与B层之间插入有C层”的表述,也不排除在A层与C之间或B层与C层之间插入有第三层的情形。
图1是图示静电吸盘加热器的一个示例的图。
如果参考图1,在静电吸盘加热器的上部,存在埋设了发热体、接地电极及静电吸盘电极的圆板形的陶瓷板。静电吸盘加热器内部的发热体产生的热能传递到陶瓷板的上部面,热能可以传递给放在静电吸盘加热器上部面上的物体。
图2是图示以往发明的包括接地电极的陶瓷加热器的一个示例的图。
如果参照图2,以往技术的陶瓷板包括接地电极210及发热体220,在静电吸盘加热器上部可以形成有凹陷的空间(POCKET),以便诸如晶片等的加热对象体可以放置。在薄膜工序时,借助于静电吸盘加热器而对诸如晶片等的加热对象体施加热,腔室(CHAMBER)内部的气流(GAS FLOW)不够均一,在静电吸盘加热器的凹陷的空间(POCKT)与晶片的外侧边缘之间空间部分230产生气流涡流,发生晶片边缘弯曲(WAFER EDGE BENDING)现象,晶片边缘的吸附均一性低下,因此,会发生施加于晶片边缘的温度均一性低下的现象。
图3是图示本发明一个实施例的静电吸盘加热器的结构的剖面图。
如果参照图3,本发明一个实施例的静电吸盘加热器可以在陶瓷板100内部包括接地电极310、静电吸盘电极320、发热体220、静电吸盘连接构件325、棒(ROD)312、322、332及棒连接构件311、321、331。
在晶片吸附工序时,当腔室内部生成等离子体时陶瓷板带电,接地电极310是用于使陶瓷板带电的电流接地的电极。接地电极310可以为圆板形态,可以为网型或片型。而且,接地电极310的成分可以为钼(Mo)。
静电吸盘电极320发挥使得带电的诸如晶片等的加热对象体可以良好地吸附于陶瓷板的作用,从外部向静电吸盘电极320施加电压,因而借助于带电压的静电吸盘电极320,可以使得位于陶瓷板上部面的诸如晶片等的加热对象体能够贴紧陶瓷板。其结果,静电吸盘加热器的热能可以良好地传递给诸如晶片等的加热对象体。
如果参照图3,静电吸盘电极320可以在与接地电极310同一平面上形成。作为一个示例,接地电极310可以在陶瓷板中央部分以圆板形态形成,静电吸盘电极320可以在所述接地电极310外侧部分,在与所述接地电极310隔开既定距离的位置形成。静电吸盘电极320可以为环形状,可以为网型或片型。而且,静电吸盘电极320的成分可以为钼(Mo)。另外,静电吸盘电极320的厚度可以为0.2mm。
而且,在同一平面上形成的接地电极310及静电吸盘电极320可以具有多样大小,当接地电极310为直径285mm的圆板形态时,静电吸盘电极320的直径可以为280mm至320mm范围的环形状。
如果再次说明图3中的静电吸盘加热器的构成,可以还包括发热体220,可以包括将接地电极310、静电吸盘电极320及发热体220与接地棒312、静电吸盘棒322及发热体220棒连接的接地棒连接构件311、静电吸盘棒连接构件321及发热体220棒连接构件。而且,就静电吸盘电极320而言,与接地电极310在平面上形成,在接地电极310外侧与接地电极310隔开既定距离的位置形成,因而难以与在陶瓷板中央部分形成的静电吸盘棒322直接连接。因此,陶瓷板可以包括用于将所述静电吸盘电极320与静电吸盘棒322电气连接的静电吸盘连接构件325。所述静电吸盘连接构件325的材料可以为钼(Mo),所述静电吸盘连接构件325可以为片型或网型中任意一种。根据所述静电吸盘连接构件325,位于陶瓷板中央部分的静电吸盘棒322与在陶瓷板边缘部分以环形状包括的静电吸盘电极320可以电气连接。因此,可以具有陶瓷板包括的接地电极310、静电吸盘电极320及发热体220的各棒能够一同位于静电吸盘加热器中央部分的效果。
根据本发明的静电吸盘加热器,分为诸如晶片等的加热对象体的吸附均一性良好的内侧部分与不够良好的外侧部分,使得静电吸盘电极320在静电吸盘加热器外侧部分形成,具有使得诸如晶片等的带电的加热对象体可以固定于静电吸盘加热器的效果。
其结果,诸如晶片等的加热对象体边缘(EDGE)部与静电吸盘加热器的接触面增加,提高热传导,具有提高诸如晶片等的加热对象体边缘部的吸附均一性及温度均一性的效果。
图4是测量并图示以往技术的陶瓷加热器与本发明的静电吸盘加热器的边缘温度的图表。
为了实验本发明的效果,使用T/C晶片,测量并比较了加热器边缘8个部分的温度。各加热器的设置温度设置为550度。以往技术的陶瓷加热器内部的接地电极310使用直径320mm的网型(24目)的电极,本发明的静电吸盘加热器的接地电极310使用直径285mm的网型(24目)的电极,静电吸盘电极320使用直径290~320mm的环形状的网型(24目)电极进行实验。
其结果,以往技术的陶瓷加热器的温度范围约7.5度,本发明的静电吸盘加热器的温度范围约2.7度。确认了本发明的静电吸盘加热器相比以往技术的陶瓷加热器,加热器边缘温度变化范围极大地减小,具体而言,确认了其温度变化范围减小为以往范围的36%左右。
本发明的静电吸盘加热器相比以往发明的陶瓷加热器,具有边缘吸附均一性极大提高的效果,因此,具有施加于诸如晶片等的加热对象体的热能的均一性也极大提高的效果。
图5是测量并图示本发明一个实施例的静电吸盘加热器的静电吸盘电极320类型(TYPE)、接地电极310直径、不同静电吸盘电极320直径的晶片边缘温度变化范围的图。
在该实验中,接地电极310使用网型(24目),直径使用275mm、280mm及285mm进行实验。而且,静电吸盘电极320使用环形状的片型及网型(24目),直径使用280mm~320mm、285mm~320mm及290mm~320mm(内径~外径)。
其结果显示,当接地电极310的直径为285mm、静电吸盘电极320为网型(24目)、静电吸盘电极320的直径为290mm~320mm(内径~外径)时,晶片边缘温度变化范围为2.7度,具有最小幅度。换言之,在所述条件下,静电吸盘加热器的吸附均一性及温度均一性最卓越。
图6是图示本发明一个实施例的静电吸盘加热器的制造方法的顺序图。
图7是用于说明本发明一个实施例的静电吸盘加热器的制造方法的图。
下面参考图7,详细说明图6所示的本发明的静电吸盘加热器制造方法。
向碳模具(CARBON MOLD)705提供第一陶瓷粉末层710(S610),提供埋设了接地电极310及静电吸盘电极320的陶瓷成型体720(S620)。然后,提供第二陶瓷粉末层730(S630),提供发热体220后(S640),再提供第三陶瓷粉末层740(S740)。此时,所述陶瓷成型体720可以以利用既定压力进行加压而能够保持形状的成型体形态提供。当然,所述整个陶瓷粉末层结构700也可以以加压成型的成型体形态提供。最后,烧结所述形成的陶瓷粉末层结构(S660)。
图8是图示本发明一个实施例的陶瓷成型体制造方法的顺序图。
图9至图13是用于说明本发明一个实施例的陶瓷成型体制造方法的图。
下面参考图9至13,详细说明图8所示的本发明一个实施例的陶瓷成型体制造方法。
首先,加工成型体900,在成型体900上部面内侧形成能够埋设接地电极310的槽(GROOVE)910,在成型体900上部面外侧形成能够埋设静电吸盘电极320的槽920,在能够埋设接地电极310的槽910中央特定部位形成能够埋设接地棒连接构件311的槽930,以便接地电极310与静电吸盘电极320能够在陶瓷板同一平面上形成(S810,图9)。
然后,将静电吸盘连接构件325提供给成型体900(S820,图10)。静电吸盘连接构件325可以是加工成“匚”形状的薄而长的板形态,如图10所示,可以贯通成型体900上下地插入于成型体900。然后,静电吸盘连接构件325的两末端可以沿着折弯线326向内侧(或外侧)折弯,在埋设静电吸盘电极320的位置与成型体900并列形成1000,以便静电吸盘连接构件325可以与静电吸盘电极320电气连接。在图10中,更详细地图示了图9的静电吸盘连接构件325沿着折弯线326向内侧(或外侧)折弯而与成型体900并列形成的样子1000。所述静电吸盘连接构件325的材料可以为钼(Mo),所述静电吸盘连接构件325类型(YTPE)可以为片型或网型中任意一种。
然后,可以提供接地棒连接构件311及静电吸盘连接构件325(S830,图12)。
而且,提供接地电极310及静电吸盘电极320(S840,图13)。接地电极310与接地棒连接构件311接触形成,以便能够电气连接,静电吸盘电极320可以与静电吸盘连接构件325接触形成,以便能够电气连接。
接地电极310可以为圆板形态,可以为网型或片型。而且,接地电极310的成分可以为钼(Mo)。
静电吸盘电极320可以为环形状,可以为网型或片型。而且,静电吸盘电极320的成分可以为钼(Mo)。另外,静电吸盘电极320的厚度可以为0.2mm。
图14是图示本发明一个实施例的陶瓷成型体的上/下部形状的图。
图14图示根据所述图8至图13所示制造方法形成的已完成成型体900的一个示例。在成型体900上部面形成有接地电极310及静电吸盘电极320,在成型体下部面形成有能够使上部面的静电吸盘电极320与静电吸盘棒连接构件321电气连接的静电吸盘连接构件325。
根据本发明的静电吸盘加热器,借助于夹持(Chucking),诸如晶片等的加热对象体边缘部与静电吸盘加热器的接触面增加,提高热传导,具有提高诸如晶片等的加热对象体边缘部的吸附均一性及温度均一性的效果。
如上所述,本发明根据诸如具体构成要素等的特定事项和限定的实施例及附图进行了说明,但这只是为了帮助本发明的更全面理解而提供的,并非本发明限定于所述实施例,只要是本发明所属领域的普通技术人员,便可以在不超出本发明的本质性特性的范围内进行多样修改及变形。因此,本发明的思想并非局限于说明的实施例而确定,不仅本申请专利范围,而且具有与该权利要求书均等或等价的变形的所有技术思想,应解释为包含于本发明的权利范围。

Claims (16)

1.一种静电吸盘加热器,包括:
接地电极(310)及向所述接地电极(310)外侧隔开既定距离形成的静电吸盘电极(320)。
2.根据权利要求1所述的静电吸盘加热器,其特征在于,
所述接地电极(310)及所述静电吸盘电极(320)在同一平面上形成。
3.根据权利要求1所述的静电吸盘加热器,其特征在于,
所述静电吸盘电极(320)为片型或网型中任意一种。
4.根据权利要求1所述的静电吸盘加热器,其特征在于,
所述接地电极(310)为具有285mm直径的圆板形状,所述静电吸盘电极(320)为内径290mm、外径320mm的环形状。
5.根据权利要求1所述的静电吸盘加热器,其特征在于,
所述静电吸盘电极(320)具有0.2mm的厚度。
6.根据权利要求1所述的静电吸盘加热器,其特征在于,
还包括用于向所述静电吸盘电极(320)供应电力的静电吸盘连接构件(325),
且所述静电吸盘连接构件(325)的材料为钼。
7.根据权利要求6所述的静电吸盘加热器,其特征在于,
所述静电吸盘连接构件(325)为片型或网型中任意一种。
8.一种静电吸盘加热器制造方法,其特征在于,包括:
对在第一陶瓷粉末层(710)及第二陶瓷粉末层(730)之间插入有埋设了接地电极(310)及静电吸盘电极(320)的陶瓷成型体(720)的陶瓷粉末层结构(700)进行成型的步骤;及
烧结所述陶瓷粉末层结构(700)的步骤;且
所述静电吸盘电极(320)向所述接地电极(310)外侧隔开既定距离形成。
9.根据权利要求8所述的静电吸盘加热器制造方法,其特征在于,
所述陶瓷粉末层结构(700)在所述第二陶瓷粉末层(730)及第三陶瓷粉末层(740)之间还包括发热体。
10.根据权利要求8所述的静电吸盘加热器制造方法,其特征在于,
所述陶瓷成型体(720)的成型步骤包括:
成型体加工步骤;
静电吸盘连接构件(325)提供步骤;
接地棒连接构件及静电吸盘棒连接构件提供步骤;及
所述接地电极(310)及所述静电吸盘电极(320)提供步骤。
11.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述接地电极(310)及所述静电吸盘电极在同一平面上提供。
12.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述静电吸盘电极(320)为片型或网型中任意一种。
13.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述接地电极(310)为具有285mm直径的圆板形状,所述静电吸盘电极(320)为内径290mm、外径320mm的环形状。
14.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述静电吸盘电极(320)具有0.2mm的厚度。
15.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述静电吸盘连接构件(325)的材料为钼。
16.根据权利要求10所述的静电吸盘加热器,其特征在于,
所述静电吸盘连接构件(325)为片型或网型中任意一种。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210047464A (ko) * 2019-10-22 2021-04-30 주식회사 미코세라믹스 세라믹 히터 및 그 제조방법
KR20210047462A (ko) * 2019-10-22 2021-04-30 주식회사 미코세라믹스 세라믹 히터 및 그 제조방법
KR20210143653A (ko) * 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP2022060859A (ja) * 2020-10-05 2022-04-15 キオクシア株式会社 静電チャック装置及び半導体製造装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452510A (en) * 1993-12-20 1995-09-26 International Business Machines Corporation Method of making an electrostatic chuck with oxide insulator
JP2000277595A (ja) * 1999-03-25 2000-10-06 Ibiden Co Ltd 静電チャック
JP2001319967A (ja) * 2000-05-11 2001-11-16 Ibiden Co Ltd セラミック基板の製造方法
US20020139563A1 (en) * 2001-03-29 2002-10-03 Ngk Insulators, Ltd. Joined structures of metal terminals and ceramic members, joined structures of metal members and ceramic members, and adhesive materials
JP2004022979A (ja) * 2002-06-19 2004-01-22 Shibaura Mechatronics Corp 吸着ステージおよびそれを用いた基板貼り合せ装置
JP2004259721A (ja) * 2003-02-24 2004-09-16 Hitachi High-Technologies Corp 試料処理装置
KR100655813B1 (ko) * 2004-04-12 2006-12-13 니뽄 가이시 가부시키가이샤 기판 가열 장치
CN101278385A (zh) * 2004-11-04 2008-10-01 株式会社爱发科 静电吸盘装置
US20090178764A1 (en) * 2008-01-11 2009-07-16 Hitachi High-Technologies Corporation Plasma processing apparatus including electrostatic chuck with built-in heater
KR101397133B1 (ko) * 2013-04-29 2014-05-19 주식회사 메카로닉스 정전척의 제조방법
JP2017212375A (ja) * 2016-05-26 2017-11-30 日本特殊陶業株式会社 静電チャック又は電極内蔵サセプタ
KR101813289B1 (ko) * 2011-03-30 2017-12-28 엔지케이 인슐레이터 엘티디 정전 척의 제조법 및 정전 척

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101000329B1 (ko) * 2006-03-08 2010-12-13 엘아이지에이디피 주식회사 플라즈마 처리장치
JP4275682B2 (ja) * 2006-05-16 2009-06-10 住友大阪セメント株式会社 静電チャック
JP2008251737A (ja) * 2007-03-29 2008-10-16 Tomoegawa Paper Co Ltd 静電チャック装置用電極部材ならびにそれを用いた静電チャック装置および静電吸着解除方法
US8607731B2 (en) * 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
WO2010047311A1 (ja) * 2008-10-20 2010-04-29 株式会社クリエイティブ テクノロジー 静電チャックの検査方法及び静電チャック装置
US9101038B2 (en) * 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
JP6868553B2 (ja) * 2014-08-15 2021-05-12 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated プラズマ化学気相堆積システムにおいて高温で圧縮又は引張応力を有するウェハを処理する方法及び装置
US10017857B2 (en) * 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
JP7073098B2 (ja) * 2017-12-27 2022-05-23 株式会社日立ハイテク ウエハ処理方法およびウエハ処理装置
SG11202007851PA (en) * 2018-02-28 2020-09-29 Applied Materials Inc Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity
JP2023067767A (ja) * 2021-10-29 2023-05-16 東京エレクトロン株式会社 基板支持器、プラズマ処理装置及びプラズマ処理方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452510A (en) * 1993-12-20 1995-09-26 International Business Machines Corporation Method of making an electrostatic chuck with oxide insulator
JP2000277595A (ja) * 1999-03-25 2000-10-06 Ibiden Co Ltd 静電チャック
JP2001319967A (ja) * 2000-05-11 2001-11-16 Ibiden Co Ltd セラミック基板の製造方法
US20020139563A1 (en) * 2001-03-29 2002-10-03 Ngk Insulators, Ltd. Joined structures of metal terminals and ceramic members, joined structures of metal members and ceramic members, and adhesive materials
JP2004022979A (ja) * 2002-06-19 2004-01-22 Shibaura Mechatronics Corp 吸着ステージおよびそれを用いた基板貼り合せ装置
JP2004259721A (ja) * 2003-02-24 2004-09-16 Hitachi High-Technologies Corp 試料処理装置
KR100655813B1 (ko) * 2004-04-12 2006-12-13 니뽄 가이시 가부시키가이샤 기판 가열 장치
CN101278385A (zh) * 2004-11-04 2008-10-01 株式会社爱发科 静电吸盘装置
US20090178764A1 (en) * 2008-01-11 2009-07-16 Hitachi High-Technologies Corporation Plasma processing apparatus including electrostatic chuck with built-in heater
KR101813289B1 (ko) * 2011-03-30 2017-12-28 엔지케이 인슐레이터 엘티디 정전 척의 제조법 및 정전 척
KR101397133B1 (ko) * 2013-04-29 2014-05-19 주식회사 메카로닉스 정전척의 제조방법
JP2017212375A (ja) * 2016-05-26 2017-11-30 日本特殊陶業株式会社 静電チャック又は電極内蔵サセプタ

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JP2021515384A (ja) 2021-06-17
US20210242062A1 (en) 2021-08-05
WO2019168271A1 (ko) 2019-09-06
KR102450476B1 (ko) 2022-10-05
CN111480221B (zh) 2024-04-05

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