JP2021508088A - 複合単結晶薄膜 - Google Patents
複合単結晶薄膜 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 304
- 239000013078 crystal Substances 0.000 title claims abstract description 137
- 239000002131 composite material Substances 0.000 title claims abstract description 59
- 230000007704 transition Effects 0.000 claims abstract description 164
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000002955 isolation Methods 0.000 claims abstract description 66
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 230000007423 decrease Effects 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 description 15
- -1 helium ions Chemical class 0.000 description 13
- 238000002513 implantation Methods 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000000926 separation method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 239000001307 helium Substances 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/704—Crystalline
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
実施例1:シリコン基板/SiO2層/ニオブ酸リチウム単結晶薄膜/シリコン単結晶薄膜複合単結晶薄膜
サイズが3インチで、厚さが0.4mmであり且つ滑面を有する単結晶シリコン基板ウェハーを使用し、シリコン基板を洗浄した後、熱酸化法を利用して単結晶シリコン基板ウェハーの滑面に厚さが2μmの二酸化ケイ素層を形成する。
サイズが3インチで、厚さが0.4mmであり且つ滑面を有する単結晶シリコンウェハーを基板として使用し、基板ウェハーを洗浄した後、熱酸化法を利用して基板ウェハーの滑面に厚さが2.5μmの二酸化ケイ素層を形成する。
サイズが3インチで、厚さが0.4mmであり且つ滑面を有する単結晶シリコン基板ウェハーを使用し、基板ウェハーを洗浄した後、熱酸化の方法を利用して基板ウェハーの滑面に厚さが600nmの二酸化ケイ素層を酸化形成する。
サイズが3インチで、厚さが0.4mmであり且つ滑面を有するタンタル酸リチウム基板ウェハーを使用し、基板ウェハーを洗浄した後、堆積法を用いて基板ウェハーの滑面に厚さが1.0μmの二酸化ケイ素層を堆積させる。次に、二酸化ケイ素層が堆積された基板ウェハーにアニーリング処理を行う。次に、二酸化ケイ素層を所定の厚さ600nmに研磨する。
Claims (10)
- 基板と、
基板上に配置される第1の遷移層と、
第1の遷移層上に配置される第1の隔離層と、
第1の隔離層上に配置される第2の遷移層と、
第2の遷移層上に配置される第1の薄膜層と、
第1の薄膜層上に配置される第3の遷移層と、
第3の遷移層上に配置される第2の薄膜層とを含み、
第1の遷移層と、第2の遷移層と、第3の遷移層はHとArを含む、複合単結晶薄膜。 - 第1の薄膜層と第2の薄膜層との間に配置される第2の隔離層をさらに含み、且つ、第1の隔離層及び第2の隔離層は二酸化ケイ素層又は窒化ケイ素層であり、その厚さは0.005μm〜4μmである、請求項1に記載の複合単結晶薄膜。
- 第1の遷移層と、第2の遷移層と、第3の遷移層におけるHの濃度は1×1019原子/cc〜1×1022原子/ccであり、第1の遷移層と、第2の遷移層と、第3の遷移層におけるArの濃度は1×1020原子/cc〜1×1023原子/ccである、請求項1に記載の複合単結晶薄膜。
- 第2の遷移層におけるHの濃度は第1の隔離層と第1の薄膜層におけるHの濃度よりそれぞれ高く、第3の遷移層におけるHの濃度は第1の薄膜層と第2の薄膜層におけるHの濃度よりそれぞれ高い、請求項1に記載の複合単結晶薄膜。
- 第1の遷移層の厚さは0.5nm〜15nmであり、第2の遷移層の厚さは0.5nm〜10nmであり、第3の遷移層の厚さは0.5nm〜15nmである、請求項1に記載の複合単結晶薄膜。
- 第3の遷移層は第1の薄膜層に隣接する第1の下位遷移層と、第2の薄膜層に隣接する第2の下位遷移層とを含み、
第1の下位遷移層において、第1の薄膜層の元素の濃度は第2の薄膜層における元素の濃度より高く、且つ、第1の薄膜層の元素の濃度が第1の下位遷移層から第2の下位遷移層に向けて漸次低減し、
第2の下位遷移層において、第2の薄膜層の元素の濃度は第1の薄膜層の元素の濃度より高く、且つ、第2の薄膜層の元素の濃度が第2の下位遷移層から第1の下位遷移層に向けて漸次低減する、請求項1に記載の複合単結晶薄膜。 - 第1の薄膜層と、第2の薄膜層はいずれもナノメートルレベルの厚さの単結晶薄膜であり、その厚さは10nm〜2000nmである、請求項1に記載の複合単結晶薄膜。
- 第1の薄膜層はニオブ酸リチウム単結晶薄膜又はタンタル酸リチウム単結晶薄膜であり、第2の薄膜層はシリコン単結晶薄膜である、請求項1に記載の複合単結晶薄膜。
- 第3の遷移層は、
濃度がシリコン単結晶薄膜層からニオブ酸リチウム単結晶薄膜又はタンタル酸リチウム単結晶薄膜層に向けて漸次低減するように第3の遷移層の全体に遍在するSiと、
濃度がニオブ酸リチウム単結晶薄膜又はタンタル酸リチウム単結晶薄膜層からシリコン単結晶薄膜層に向けて漸次低減し、且つ、第3の遷移層の全体に遍在しないTa又はNbとを含む、請求項8に記載の複合単結晶薄膜。 - 基板はシリコン基板、ニオブ酸リチウム基板又はタンタル酸リチウム基板であり、基板の厚さは0.1mm〜1mmである、請求項1又は2に記載の複合単結晶薄膜。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2018/092190 WO2019241960A1 (zh) | 2018-06-21 | 2018-06-21 | 复合单晶薄膜 |
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JP2021508088A true JP2021508088A (ja) | 2021-02-25 |
JP7124088B2 JP7124088B2 (ja) | 2022-08-23 |
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US (1) | US20200338860A1 (ja) |
EP (1) | EP3731259B1 (ja) |
JP (1) | JP7124088B2 (ja) |
KR (1) | KR102449216B1 (ja) |
WO (1) | WO2019241960A1 (ja) |
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JP6454606B2 (ja) * | 2015-06-02 | 2019-01-16 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
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- 2018-06-21 EP EP18923149.1A patent/EP3731259B1/en active Active
- 2018-06-21 US US16/958,998 patent/US20200338860A1/en not_active Abandoned
- 2018-06-21 JP JP2020534967A patent/JP7124088B2/ja active Active
- 2018-06-21 KR KR1020207009018A patent/KR102449216B1/ko active IP Right Grant
- 2018-06-21 WO PCT/CN2018/092190 patent/WO2019241960A1/zh unknown
Patent Citations (10)
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JPH09315811A (ja) * | 1996-03-22 | 1997-12-09 | Sanyo Electric Co Ltd | 非晶質半導体及びその製造方法並びに光起電力装置 |
CN1385906A (zh) * | 2002-05-24 | 2002-12-18 | 中国科学院上海微系统与信息技术研究所 | 一种广义的绝缘体上半导体薄膜材料及制备方法 |
JP2009021573A (ja) * | 2007-06-12 | 2009-01-29 | Kyoto Institute Of Technology | 半導体基板の製造方法および半導体基板 |
JP2009272619A (ja) * | 2008-04-10 | 2009-11-19 | Shin Etsu Chem Co Ltd | 貼り合わせ基板の製造方法 |
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WO2014192873A1 (ja) * | 2013-05-31 | 2014-12-04 | 京セラ株式会社 | 複合基板およびその製造方法 |
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JP7124088B2 (ja) | 2022-08-23 |
WO2019241960A1 (zh) | 2019-12-26 |
EP3731259B1 (en) | 2024-05-08 |
KR20200045540A (ko) | 2020-05-04 |
EP3731259A1 (en) | 2020-10-28 |
EP3731259A4 (en) | 2021-08-04 |
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KR102449216B1 (ko) | 2022-09-29 |
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