JP2021502001A - エンハンスメント型トランジスタ構造を有する半導体素子 - Google Patents
エンハンスメント型トランジスタ構造を有する半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 33
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 238000001459 lithography Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001127 nanoimprint lithography Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002090 nanochannel Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
ゲート電極指間の相対距離をもう一度増加でき、孔の密度をさらに低下させることができる。
合計されたフィン断面積とは、ゲート電極領域の残ったフィンの全面積である。
図2に模式的に示されているように、第1の半導体層16および第2の半導体層18を有する層構造が、ベース基板14上に配置されている。
Claims (12)
- エンハンスメント型トランジスタ構造(12)を有する半導体素子であって、
前記トランジスタ構造(12)は、第1の方向(20)に沿って層状に配置されたベース基板(14)、第1の半導体層(16)および第2の半導体層(18)を含む層構造を有し、
前記トランジスタ構造(12)は、第2の方向(28)に沿って互いから離れて間隔を置かれて配置されたソース電極(22)、ゲート電極(24)およびドレイン電極(26)を有し、
前記第1の半導体層(16)は、ベース基板(14)上に配置されたIII族第1グループ窒化物材料によって形成され、
前記第2の半導体層(18)は、前記第1の半導体層(16)上に配置されたIII族第2グループ窒化物材料によって形成され、前記第III族第1グループおよび第2グループの窒化物は材料が互いに異なり、
前記第1および第2の半導体層(16、18)の境界領域において2D電子ガス(19)が形成され、
前記第1の半導体層(16)および第2の半導体層(18)は、前記ゲート電極(24)の領域において、複数の穴(32)を有し、前記複数の穴(32)の間に第1および第2の第III族窒化物材料を含む複数のフィン(44)が残留し、
前記ゲート電極(24)は、前記穴(32)に延びる複数のゲート電極指(42)を有し、
前記ゲート電極指(42)を含む前記穴(32)が、穴の前記第1列(34)および前記第2列(36)を形成し、
前記第1列および第2列(34、36)は、いずれの場合においても第2の方向(28)を横断する方向に走る第3の方向(40)を定め、
前記第2列(36)の各穴(32)は、前記第1列(34)の各穴(32)に対して、前記第2の方向(28)および前記第3の方向(40)にずれている、半導体素子。 - 前記第1列および第2列(34、36)は、互いに平行に走っている、請求項1に記載の半導体素子。
- 前記複数の穴(32)が第3列(38)を形成し、前記第3列(38)の各穴(32)は、前記第2列(34)の各穴(32)に対して、前記第2の方向(28)および前記第3の方向(40)にずれている、請求項1または請求項2に記載の半導体素子。
- 前記第1列(34)の各穴(32)の間のフィン(44)と、前記第2列(36)の各穴(32)の間のフィン(44)とは、第3の方向(40)にずれており、そのずれている距離は、第2の方向の穴径(DL)および穴間距離(DA1)の合計の半分に対応する、請求項1〜請求項3のいずれか1項に記載の半導体素子。
- 前記第1列(34)の2つの隣接する穴(32)の第1の穴間距離(DA1)が、前記第2列(36)の2つの隣接する穴(32)の第2の穴間距離に等しい、請求項1〜請求項4のいずれか1項に記載の半導体素子。
- 前記第1列(34)の穴(32)と前記第2列(36)の隣接する穴(32)との間のさらなる穴間距離(DA2)が、前記第1列(34)の2つの隣接する穴(32)の第1の穴間距離(DA1)に等しい、請求項1〜請求項5のいずれか1項に記載の半導体素子。
- 隣接する穴の穴間距離(DA1、DA2、DA3)は、50nmから150nmの範囲にあり、好ましくは50nmから100nmの範囲にある、請求項1〜請求項6のいずれか1項に記載の半導体素子。
- 前記穴(32)が第3の方向に穴径(DL)を有し、当該穴径(DL)は、50nmから150nmの範囲にあり、好ましくは50nmから100nmまでの範囲にある、請求項1〜請求項7のいずれか1項に記載の半導体素子。
- 前記ゲート電極(24)の領域の各穴(32)は、合計された穴断面積(46)を形成し、前記ゲート電極(24)の領域のフィン(44)は、合計されたフィン断面積(48)を形成し、
前記合計された穴断面積(46)および前記合計されたフィン断面積(48)は、大きさにおいてほぼ等しい、請求項1〜請求項8のいずれか1項に記載の半導体素子。 - 前記穴(32)が電気絶縁誘電体(30)によって埋められている、請求項1〜請求項9のいずれか1項に記載の半導体素子。
- 前記フィン(44)は、第3の方向(40)の2本の絶縁ゲート電極指(42)によって横につながっている、請求項1〜請求項10のいずれか1項に記載の半導体素子。
- 前記穴(32)は円形である、請求項1〜請求項11のいずれか1項に記載の半導体素子。
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DE102017125803.5A DE102017125803B4 (de) | 2017-11-06 | 2017-11-06 | Halbleiterbauelement mit einer Transistorstruktur vom Anreicherungstyp |
DE102017125803.5 | 2017-11-06 | ||
PCT/EP2018/080166 WO2019086664A1 (de) | 2017-11-06 | 2018-11-05 | Halbleiterbauelement mit einer transistorstruktur vom anreicherungstyp |
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JP2021502001A true JP2021502001A (ja) | 2021-01-21 |
JP7433225B2 JP7433225B2 (ja) | 2024-02-19 |
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US (1) | US11257915B2 (ja) |
EP (1) | EP3707753B1 (ja) |
JP (1) | JP7433225B2 (ja) |
CN (1) | CN111448667B (ja) |
DE (1) | DE102017125803B4 (ja) |
WO (1) | WO2019086664A1 (ja) |
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JP2010114219A (ja) * | 2008-11-05 | 2010-05-20 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2013527987A (ja) * | 2010-04-28 | 2013-07-04 | クリー インコーポレイテッド | 改良された接着力を有する半導体デバイス及びその製造方法 |
US20130168687A1 (en) * | 2011-06-29 | 2013-07-04 | Industrial Technology Research Institute | Enhancement mode gallium nitride based transistor device |
JP2014534632A (ja) * | 2011-10-11 | 2014-12-18 | マサチューセッツ インスティテュート オブ テクノロジー | 凹型電極構造を有する半導体装置 |
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- 2017-11-06 DE DE102017125803.5A patent/DE102017125803B4/de active Active
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Patent Citations (4)
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JP2010114219A (ja) * | 2008-11-05 | 2010-05-20 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2013527987A (ja) * | 2010-04-28 | 2013-07-04 | クリー インコーポレイテッド | 改良された接着力を有する半導体デバイス及びその製造方法 |
US20130168687A1 (en) * | 2011-06-29 | 2013-07-04 | Industrial Technology Research Institute | Enhancement mode gallium nitride based transistor device |
JP2014534632A (ja) * | 2011-10-11 | 2014-12-18 | マサチューセッツ インスティテュート オブ テクノロジー | 凹型電極構造を有する半導体装置 |
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US11257915B2 (en) | 2022-02-22 |
DE102017125803B4 (de) | 2021-04-29 |
CN111448667B (zh) | 2024-03-08 |
JP7433225B2 (ja) | 2024-02-19 |
WO2019086664A1 (de) | 2019-05-09 |
EP3707753A1 (de) | 2020-09-16 |
CN111448667A (zh) | 2020-07-24 |
US20200373399A1 (en) | 2020-11-26 |
EP3707753B1 (de) | 2022-08-31 |
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