JP2021501986A - 基板に流体をコーティングする方法及びシステム - Google Patents
基板に流体をコーティングする方法及びシステム Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 130
- 239000012530 fluid Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000000576 coating method Methods 0.000 title abstract description 39
- 239000011248 coating agent Substances 0.000 title abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 19
- 238000003754 machining Methods 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 239000006185 dispersion Substances 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims 2
- 238000003631 wet chemical etching Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 66
- 239000000243 solution Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 15
- 239000007788 liquid Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001079 digestive effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 hydroperoxyl groups Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000009249 intrinsic sympathomimetic activity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Abstract
Description
本出願は、参照により開示内容が完全な形で本明細書に明示的に組み込まれている、2017年9月29日に出願された米国仮特許出願第62/565,864号明細書、件名「METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID」の優先権を主張するものである。
Claims (20)
- 1つ以上の物理的フィーチャが表面に形成された基板を、基板加工ユニットにおいて受け取るステップと、
前記基板の表面の環境にガスを導入するステップと、
前記基板の表面に流体を塗布するステップであって、前記ガスは、前記基板の表面に形成された前記1つ以上の物理的フィーチャに対する前記流体の分散を促進する、前記塗布するステップと、
デバイス形成目標を達成するように、前記流体の分散に関連する1つ以上の加工パラメータを制御するステップと、
を含む方法。 - 前記基板の表面全体にわたって前記流体を回転させるステップを更に含む、請求項1に記載の方法。
- 前記ガスは有機である、請求項1に記載の方法。
- 前記ガスは、CxHy、CxHyFz、CxHyClz、及びCxFyClz(x、y、zは整数)から成る群から選択される、請求項3に記載の方法。
- 前記流体は有機材料である、請求項1に記載の方法。
- 前記有機材料はフォトレジストである、請求項5に記載の方法。
- 前記基板の表面を洗浄するステップを更に含む、請求項1に記載の方法。
- 前記流体は水を含む、請求項7に記載の方法。
- 前記流体は洗浄液である、請求項7に記載の方法。
- 前記ガスは親水性である、請求項7に記載の方法。
- 前記基板の表面をウェットエッチング液でエッチングするステップを更に含む、請求項1に記載の方法。
- 前記流体はウェット化学エッチング液を含む、請求項11に記載の方法。
- 前記ガスは、前記ウェット化学エッチング液に溶けるように選択されている、請求項12に記載の方法。
- 前記ガスをチャンバ全体に注入するステップを更に含む、請求項1に記載の方法。
- 前記ガスを前記基板の表面に沿って注入するステップを更に含む、請求項1に記載の方法。
- 前記ガスは前記流体の蒸気を含む、請求項1に記載の方法。
- 前記1つ以上の加工パラメータを制御する前記ステップは、前記基板の表面におけるガス濃度を制御することを含む、請求項1に記載の方法。
- 前記1つ以上の加工パラメータを制御する前記ステップは、チャンバ内のガス圧を制御することを含む、請求項1に記載の方法。
- 前記デバイス形成目標は、前記基板の表面にあるフィーチャの高さ及び形状が均一であることを含む、請求項1に記載の方法。
- 1つ以上の物理的フィーチャが表面に形成された基板を、基板加工ユニットにおいて受け取るステップと、
第1の流体に溶ける第1のガスを識別するステップと、
前記第1のガスを前記基板の表面の環境に導入して、前記基板上に形成された前記物理的フィーチャ間の空間を前記第1のガスで満たすステップと、
前記基板の表面に前記第1の流体を堆積させるステップであって、前記第1のガスは前記第1の流体に溶け、結果として、前記第1の流体は、前記基板上に形成された前記物理的フィーチャ間の前記空間を満たし、前記基板上に形成された前記物理的フィーチャ間の前記空間にガスがとどまらない、前記堆積させるステップと、
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201762565864P | 2017-09-29 | 2017-09-29 | |
US62/565,864 | 2017-09-29 | ||
PCT/US2018/052853 WO2019067538A1 (en) | 2017-09-29 | 2018-09-26 | METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID |
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JP2021501986A true JP2021501986A (ja) | 2021-01-21 |
JP7074956B2 JP7074956B2 (ja) | 2022-05-25 |
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US (1) | US10707070B2 (ja) |
JP (1) | JP7074956B2 (ja) |
KR (1) | KR102433947B1 (ja) |
TW (1) | TWI746891B (ja) |
WO (1) | WO2019067538A1 (ja) |
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WO2020226329A1 (ko) | 2019-05-03 | 2020-11-12 | 주식회사 엘지화학 | 촉매점이 도입된 기능성 분리막, 그 제조 방법 및 이를 포함하는 리튬 이차전지 |
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- 2018-09-26 WO PCT/US2018/052853 patent/WO2019067538A1/en active Application Filing
- 2018-09-26 US US16/142,537 patent/US10707070B2/en active Active
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JP2005159292A (ja) * | 2003-09-18 | 2005-06-16 | Nec Kagoshima Ltd | 基板処理方法及びそれに用いる薬液 |
JP2008505484A (ja) * | 2004-06-30 | 2008-02-21 | 東京エレクトロン株式会社 | 超臨界二酸化炭素処理を用いて基板を処理するためのシステム及び方法 |
JP2014516205A (ja) * | 2011-05-12 | 2014-07-07 | アプライド マテリアルズ インコーポレイテッド | ホウ素炭素膜をドライストリッピングする方法 |
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US10707070B2 (en) | 2020-07-07 |
WO2019067538A1 (en) | 2019-04-04 |
US20190103268A1 (en) | 2019-04-04 |
KR20200049799A (ko) | 2020-05-08 |
TW201929038A (zh) | 2019-07-16 |
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JP7074956B2 (ja) | 2022-05-25 |
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