JP2021145153A - 試料の処理方法およびプラズマ処理装置 - Google Patents
試料の処理方法およびプラズマ処理装置 Download PDFInfo
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- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 58
- 150000003624 transition metals Chemical class 0.000 claims abstract description 48
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- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000000376 reactant Substances 0.000 claims abstract description 5
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- 230000003647 oxidation Effects 0.000 claims description 38
- 238000007254 oxidation reaction Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 32
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- 230000007935 neutral effect Effects 0.000 claims description 5
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- 230000003595 spectral effect Effects 0.000 claims description 4
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- 230000001419 dependent effect Effects 0.000 claims description 3
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- 150000002367 halogens Chemical class 0.000 claims description 3
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- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
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- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
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- 230000003287 optical effect Effects 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000008139 complexing agent Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- -1 oxygen ions Chemical class 0.000 description 4
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
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- 230000001276 controlling effect Effects 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- 150000004820 halides Chemical class 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- FJDJVBXSSLDNJB-LNTINUHCSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FJDJVBXSSLDNJB-LNTINUHCSA-N 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 238000005469 granulation Methods 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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Abstract
Description
Claims (12)
- 予め試料に形成された遷移金属元素を含む遷移金属膜を所定の膜厚まで当該遷移金属膜を残してエッチングするエッチング工程を含む試料の処理方法であって、
前記エッチング工程は、
前記試料の温度を100℃以下に保ちつつ、前記遷移金属膜の表面に遷移金属酸化物層を等方的に生成する第1の工程と、
前記遷移金属酸化物層にβ−ジケトンを含む錯化ガスを供給しつつ、前記試料の温度を150℃以上250℃以下の所定の温度まで昇温させる第2の工程と、
前記試料の温度を150℃以上250℃以下に保ちつつ、前記錯化ガスと前記第1の工程で形成された遷移金属酸化物との反応により生じた反応物を昇華させて除去する第3の工程と、
前記試料を冷却する第4の工程とを有する試料の処理方法。 - 請求項1において、
前記エッチング工程において、前記第1〜第4の工程が繰り返し行われる試料の処理方法。 - 請求項1において、
前記第1の工程において、酸素ラジカルを前記遷移金属膜に照射することにより、前記遷移金属酸化物層を生成する試料の処理方法。 - 請求項1において、
前記錯化ガスはハロゲン元素を含まないβ−ジケトンを含む試料の処理方法。 - 請求項1において、
前記第2の工程において、電磁波により前記試料の温度を昇温させる試料の処理方法。 - 請求項1において、
前記遷移金属膜は、Co(コバルト)を含む金属膜である試料の処理方法。 - プラズマ源と、
遷移金属元素を含む遷移金属膜が形成された試料が載置されるステージが設置された処理室と、
前記プラズマ源に酸化ガスを供給するガス供給部と、
β−ジケトンを含む錯化ガスを前記処理室に供給する錯化ガス供給器と、
前記プラズマ源と前記ステージとの間に設置されるスリット板と、
前記処理室を排気する排気機構と、
制御部とを有し、
前記制御部は、前記遷移金属膜を所定の膜厚まで当該遷移金属膜を残してエッチングするエッチング工程において、試料の温度を100℃以下に保ちつつ、前記ガス供給部から酸化ガスを前記プラズマ源に供給しながらプラズマを発生させ、前記スリット板を通過した中性の前記酸化ガスとラジカルとを前記試料に照射することにより前記遷移金属膜の表面に遷移金属酸化物層を生成し、その後前記排気機構により前記処理室を排気する第1の工程と、前記錯化ガス供給器から前記処理室に前記錯化ガスを供給させつつ前記試料の温度を150℃以上250℃以下の所定の温度まで昇温させる第2の工程と、前記試料の温度を150℃以上250℃以下に保つことにより、前記錯化ガスと前記第1の工程で形成された遷移金属酸化物との反応により生じた反応物を昇華させ、その後前記排気機構により前記処理室を排気する第3の工程と、前記試料を冷却する第4の工程とを実行するプラズマ処理装置。 - 請求項7において、
前記制御部は、前記エッチング工程において前記第1〜第4の工程を繰り返し実行するプラズマ処理装置。 - 請求項7において、
前記試料を加熱するランプユニットを有し、
前記制御部は、前記エッチング工程において、前記ランプユニットが発生する電磁波により前記試料の温度を昇温させるプラズマ処理装置。 - 請求項9において、
前記ステージの内部に形成される冷媒流路に冷媒を循環供給するチラーを有し、
前記制御部は、前記チラーを制御して前記試料を冷却するプラズマ処理装置。 - 請求項10において、
前記ステージの温度を測定する温度計と、
前記制御部は、前記エッチング工程において、前記温度計により測定された前記ステージの温度、及び前記試料に照射された電磁波が前記試料に吸収された電磁波のスペクトル強度の波長依存性データに基づいて求めた前記試料の温度分布情報に基づき、前記ランプユニット及び前記チラーを制御するプラズマ処理装置。 - 請求項10において、
前記ガス供給部は、前記試料を冷却する冷却ガスを前記試料と前記ステージとの間に供給可能であり、
前記制御部は、前記エッチング工程の前記第1の工程と前記第4の工程において、前記ガス供給部に前記冷却ガスを供給させるプラズマ処理装置。
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