JP2021141229A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2021141229A JP2021141229A JP2020038628A JP2020038628A JP2021141229A JP 2021141229 A JP2021141229 A JP 2021141229A JP 2020038628 A JP2020038628 A JP 2020038628A JP 2020038628 A JP2020038628 A JP 2020038628A JP 2021141229 A JP2021141229 A JP 2021141229A
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- Prior art keywords
- gas
- oxidation
- processing container
- torr
- film
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 63
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims description 8
- NKPGVXFZFGXJDM-UHFFFAOYSA-N N,N,2,4,6,8-hexamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocan-2-amine Chemical compound CN([Si]1(O[SiH](O[SiH](O[SiH](O1)C)C)C)C)C NKPGVXFZFGXJDM-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 74
- 235000012431 wafers Nutrition 0.000 description 50
- 238000010438 heat treatment Methods 0.000 description 16
- 238000010926 purge Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910008051 Si-OH Inorganic materials 0.000 description 3
- 229910006358 Si—OH Inorganic materials 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- QDCRNCYAGDGTQH-UHFFFAOYSA-N 2,4,6-trimethyl-N-propan-2-yl-1,3,5,2,4,6-trioxatrisilinan-2-amine Chemical compound C(C)(C)N[Si]1(O[SiH](O[SiH](O1)C)C)C QDCRNCYAGDGTQH-UHFFFAOYSA-N 0.000 description 1
- MTJNSAWXHIGBMS-UHFFFAOYSA-N 4-ethyl-N,2,4,6,8-pentamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocan-2-amine Chemical compound C(C)[Si]1(O[SiH](O[SiH](O[Si](O1)(C)NC)C)C)C MTJNSAWXHIGBMS-UHFFFAOYSA-N 0.000 description 1
- SNXXOXVWWPTYGV-UHFFFAOYSA-N 4-ethyl-N,2,4,6-tetramethyl-1,3,5,2,4,6-trioxatrisilinan-2-amine Chemical compound C(C)[Si]1(O[SiH](O[Si](O1)(C)NC)C)C SNXXOXVWWPTYGV-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RETAJXBHGQGDGX-UHFFFAOYSA-N C(C)(C)N[Si]1(O[Si](O[Si](O1)(C)C)(C)C)C Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O1)(C)C)(C)C)C RETAJXBHGQGDGX-UHFFFAOYSA-N 0.000 description 1
- BOCIVJYHXSPLFJ-UHFFFAOYSA-N C(C)(C)N[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C Chemical compound C(C)(C)N[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C BOCIVJYHXSPLFJ-UHFFFAOYSA-N 0.000 description 1
- BLWBMTUVLGKNLI-UHFFFAOYSA-N C(C)N([Si]1(O[Si](O[Si](O1)(C)C)(C)C)C)CC Chemical compound C(C)N([Si]1(O[Si](O[Si](O1)(C)C)(C)C)C)CC BLWBMTUVLGKNLI-UHFFFAOYSA-N 0.000 description 1
- MYULOUNVWZGCEP-UHFFFAOYSA-N C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C)CC Chemical compound C(C)N([Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(C)C)C)CC MYULOUNVWZGCEP-UHFFFAOYSA-N 0.000 description 1
- GBMZTZLPQUYUBH-UHFFFAOYSA-N C(C)[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(CNC)C)C Chemical compound C(C)[Si]1(O[Si](O[Si](O[Si](O1)(C)C)(C)C)(CNC)C)C GBMZTZLPQUYUBH-UHFFFAOYSA-N 0.000 description 1
- RHWMIBRHTQLEHS-UHFFFAOYSA-N CN(C)[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C Chemical compound CN(C)[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C RHWMIBRHTQLEHS-UHFFFAOYSA-N 0.000 description 1
- JUOWAYTZODYNGX-UHFFFAOYSA-N CN([Si](O[Si](O[Si](OC(C)=O)(C)C)(C)C)(C)C)C Chemical compound CN([Si](O[Si](O[Si](OC(C)=O)(C)C)(C)C)(C)C)C JUOWAYTZODYNGX-UHFFFAOYSA-N 0.000 description 1
- VTNUYJADCMSQMI-UHFFFAOYSA-N CN([Si](O[Si](O[Si](OC)(C)C)(C)C)(C)C)C Chemical compound CN([Si](O[Si](O[Si](OC)(C)C)(C)C)(C)C)C VTNUYJADCMSQMI-UHFFFAOYSA-N 0.000 description 1
- LDHLKNHLSRTTLI-UHFFFAOYSA-N CN([Si]1(O[Si](O[Si](O1)(C)C)(C)C)C)C Chemical compound CN([Si]1(O[Si](O[Si](O1)(C)C)(C)C)C)C LDHLKNHLSRTTLI-UHFFFAOYSA-N 0.000 description 1
- FEWLMMBBQFROHM-UHFFFAOYSA-N C[SiH]1O[SiH](C)O[Si](C)(N)O[SiH](C)O1 Chemical compound C[SiH]1O[SiH](C)O[Si](C)(N)O[SiH](C)O1 FEWLMMBBQFROHM-UHFFFAOYSA-N 0.000 description 1
- ACIZBKBJJRPJBG-UHFFFAOYSA-N N,N,2,4,6-pentamethyl-1,3,5,2,4,6-trioxatrisilinan-2-amine Chemical compound CN([Si]1(O[SiH](O[SiH](O1)C)C)C)C ACIZBKBJJRPJBG-UHFFFAOYSA-N 0.000 description 1
- ZSZKCNJZDBDPAU-UHFFFAOYSA-N N,N-diethyl-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocan-2-amine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O[SiH](O1)C)C)C)C)CC ZSZKCNJZDBDPAU-UHFFFAOYSA-N 0.000 description 1
- FUPBVOQTVXEWIK-UHFFFAOYSA-N N,N-diethyl-2,4,6-trimethyl-1,3,5,2,4,6-trioxatrisilinan-2-amine Chemical compound C(C)N([Si]1(O[SiH](O[SiH](O1)C)C)C)CC FUPBVOQTVXEWIK-UHFFFAOYSA-N 0.000 description 1
- AZSFXEYQOYOTLO-UHFFFAOYSA-N N-[[[[dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilyl]oxy-dimethylsilyl]oxy-methylsilyl]-N-methylmethanamine Chemical compound CN([SiH](O[Si](O[Si](O[Si](O[Si](C)(C)C)(C)C)(C)C)(C)C)C)C AZSFXEYQOYOTLO-UHFFFAOYSA-N 0.000 description 1
- XGXDQDQORVDBTK-UHFFFAOYSA-N N-[[[[dimethylsilyloxy(dimethyl)silyl]oxy-dimethylsilyl]oxy-dimethylsilyl]oxy-dimethylsilyl]-N-methylmethanamine Chemical compound CN([Si](O[Si](O[Si](O[Si](O[SiH](C)C)(C)C)(C)C)(C)C)(C)C)C XGXDQDQORVDBTK-UHFFFAOYSA-N 0.000 description 1
- FPNAMOMLTPRYKU-UHFFFAOYSA-N N-[[[dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilyl]oxy-dimethylsilyl]oxysilyl-N-methylmethanamine Chemical compound CN([SiH2]O[Si](O[Si](O[Si](O[Si](C)(C)C)(C)C)(C)C)(C)C)C FPNAMOMLTPRYKU-UHFFFAOYSA-N 0.000 description 1
- DUDSDBXUSIWSIU-UHFFFAOYSA-N N-[[[dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilyl]oxy-methylsilyl]-N-methylmethanamine Chemical compound CN([SiH](O[Si](O[Si](O[Si](C)(C)C)(C)C)(C)C)C)C DUDSDBXUSIWSIU-UHFFFAOYSA-N 0.000 description 1
- AIOOAKUSKLXDBT-UHFFFAOYSA-N N-[[[dimethylsilyloxy(dimethyl)silyl]oxy-dimethylsilyl]oxy-dimethylsilyl]-N-methylmethanamine Chemical compound CN([Si](O[Si](O[Si](O[SiH](C)C)(C)C)(C)C)(C)C)C AIOOAKUSKLXDBT-UHFFFAOYSA-N 0.000 description 1
- UHHFRHKEOFOLPV-UHFFFAOYSA-N N-[[dimethyl(trimethylsilyloxy)silyl]oxy-dimethylsilyl]oxysilyl-N-methylmethanamine Chemical compound CN([SiH2]O[Si](O[Si](O[Si](C)(C)C)(C)C)(C)C)C UHHFRHKEOFOLPV-UHFFFAOYSA-N 0.000 description 1
- DDDUGVQSSHOKNB-UHFFFAOYSA-N N-methyl-N-[methyl-[methyl-[methyl(trimethylsilyloxy)silyl]oxysilyl]oxysilyl]methanamine Chemical compound CN([SiH](O[SiH](O[SiH](O[Si](C)(C)C)C)C)C)C DDDUGVQSSHOKNB-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KHBSNGHCLLLZKB-UHFFFAOYSA-N [dimethyl(silyloxysilyloxy)silyl]oxy-dimethyl-trimethylsilyloxysilane Chemical compound C[Si](O[Si](O[Si](C)(C)C)(C)C)(O[SiH2]O[SiH3])C KHBSNGHCLLLZKB-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- XQDUQDMHENEJSC-UHFFFAOYSA-N n,n,2,4,4,6,6,8,8-nonamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocan-2-amine Chemical compound CN(C)[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XQDUQDMHENEJSC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
図1及び図2を参照し、実施形態の成膜装置の一例について説明する。以下、成膜装置として、多数枚の基板に対して一括で処理を行うバッチ式の縦型熱処理装置を例に挙げて説明する。図1は、縦型熱処理装置の構成例を示す縦断面図である。図2は、図1の縦型熱処理装置の処理容器を説明するための図である。
図3を参照し、縦型熱処理装置1により実行されるシリコン酸化膜の成膜方法の一例について説明する。図3は、実施形態の成膜方法の一例を示すフローチャートである。
実施例として、縦型熱処理装置1を用い、ウエハボート16の上部、中央部及び下部を含んで多数枚のウエハWを搭載して、前述の成膜方法によって多数枚のウエハWの表面にシリコン酸化膜を形成した。
参考例として、縦型熱処理装置1を用い、ウエハボート16の上部、中央部及び下部を含んで多数枚のウエハWを搭載して、前述の成膜方法によって多数枚のウエハWの表面にシリコン酸化膜を形成した。
16 ウエハボート
W ウエハ
Claims (5)
- 処理容器内において多数枚の基板に一括でシリコン酸化膜を形成する成膜方法であって、
前記処理容器内に有機アミノ官能化オリゴシロキサン化合物を含むシリコン原料ガスを供給するステップと、
1〜10Torr(133〜1333Pa)の圧力に調整された前記処理容器内に酸化ガスを供給するステップと、
を含む複数回のサイクルを実行する、成膜方法。 - 前記有機アミノ官能化オリゴシロキサン化合物は、2−ジメチルアミノ−2,4,6,8−テトラメチルシクロテトラシロキサンである、
請求項1に記載の成膜方法。 - 前記酸化ガスは、O3ガスを含む、
請求項1又は2に記載の成膜方法。 - 前記酸化ガスを供給するステップにおける前記処理容器内の圧力は、1.5〜10Torr(200〜1333Pa)である、
請求項1乃至3のいずれか一項に記載の成膜方法。 - 前記処理容器は、前記多数枚の基板を上下方向に間隔を有して棚状に保持する基板保持具を収容可能である、
請求項1乃至4のいずれか一項に記載の成膜方法。
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JP2020038628A JP7386732B2 (ja) | 2020-03-06 | 2020-03-06 | 成膜方法 |
CN202110193603.8A CN113355652A (zh) | 2020-03-06 | 2021-02-20 | 成膜方法 |
KR1020210024578A KR20210113051A (ko) | 2020-03-06 | 2021-02-24 | 성막 방법 |
TW110106632A TWI821637B (zh) | 2020-03-06 | 2021-02-25 | 成膜方法 |
US17/184,807 US11881396B2 (en) | 2020-03-06 | 2021-02-25 | Deposition method |
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JP2018154615A (ja) * | 2017-02-08 | 2018-10-04 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | ケイ素含有膜の堆積のための有機アミノ官能化直鎖状及び環状オリゴシロキサン |
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JP2006261434A (ja) * | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
JP4228008B2 (ja) * | 2006-08-23 | 2009-02-25 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
US8528224B2 (en) * | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
KR20150036114A (ko) * | 2012-07-20 | 2015-04-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Ald/cvd 규소-함유 필름 애플리케이션을 위한 유기실란 전구체 |
JP6545093B2 (ja) * | 2015-12-14 | 2019-07-17 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US10283348B2 (en) * | 2016-01-20 | 2019-05-07 | Versum Materials Us, Llc | High temperature atomic layer deposition of silicon-containing films |
US11098069B2 (en) * | 2018-01-30 | 2021-08-24 | Versum Materials Us, Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
KR20210114546A (ko) * | 2019-02-05 | 2021-09-23 | 버슘머트리얼즈 유에스, 엘엘씨 | 탄소 도핑된 산화규소의 증착 |
US20210017198A1 (en) * | 2019-04-05 | 2021-01-21 | Versum Materials Us, Llc | Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
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