JP2021132126A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021132126A5 JP2021132126A5 JP2020026863A JP2020026863A JP2021132126A5 JP 2021132126 A5 JP2021132126 A5 JP 2021132126A5 JP 2020026863 A JP2020026863 A JP 2020026863A JP 2020026863 A JP2020026863 A JP 2020026863A JP 2021132126 A5 JP2021132126 A5 JP 2021132126A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- signal
- substrate
- chamber
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 32
- 239000000758 substrate Substances 0.000 claims 32
- 238000003672 processing method Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020026863A JP7382848B2 (ja) | 2020-02-20 | 2020-02-20 | 基板処理方法および基板処理装置 |
| TW110104594A TWI874577B (zh) | 2020-02-20 | 2021-02-08 | 基板處理方法及基板處理裝置 |
| CN202110183119.7A CN113284786B (zh) | 2020-02-20 | 2021-02-10 | 基片处理方法和基片处理装置 |
| KR1020210021336A KR102898208B1 (ko) | 2020-02-20 | 2021-02-17 | 기판 처리 방법 및 기판 처리 장치 |
| US17/179,436 US11501976B2 (en) | 2020-02-20 | 2021-02-19 | Substrate processing method and substrate processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020026863A JP7382848B2 (ja) | 2020-02-20 | 2020-02-20 | 基板処理方法および基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021132126A JP2021132126A (ja) | 2021-09-09 |
| JP2021132126A5 true JP2021132126A5 (enExample) | 2023-02-14 |
| JP7382848B2 JP7382848B2 (ja) | 2023-11-17 |
Family
ID=77275787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020026863A Active JP7382848B2 (ja) | 2020-02-20 | 2020-02-20 | 基板処理方法および基板処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11501976B2 (enExample) |
| JP (1) | JP7382848B2 (enExample) |
| CN (1) | CN113284786B (enExample) |
| TW (1) | TWI874577B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114695051B (zh) * | 2020-12-31 | 2025-02-21 | 拓荆科技股份有限公司 | 半导体处理设备及方法 |
| US20230416906A1 (en) * | 2022-06-28 | 2023-12-28 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US20250293026A1 (en) * | 2024-03-15 | 2025-09-18 | Applied Materials, Inc. | High-power carbon hardmask deposition and charge dissipation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5737177A (en) * | 1996-10-17 | 1998-04-07 | Applied Materials, Inc. | Apparatus and method for actively controlling the DC potential of a cathode pedestal |
| JP2004111381A (ja) * | 2002-08-26 | 2004-04-08 | Matsushita Electric Ind Co Ltd | プラズマ処理装置及び方法 |
| US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP5638682B2 (ja) * | 2006-03-22 | 2014-12-10 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| JP5171683B2 (ja) * | 2009-02-18 | 2013-03-27 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| JP5916056B2 (ja) * | 2010-08-23 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US9269587B2 (en) * | 2013-09-06 | 2016-02-23 | Applied Materials, Inc. | Methods for etching materials using synchronized RF pulses |
| JP6512962B2 (ja) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9966231B2 (en) * | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
| JP7137913B2 (ja) | 2017-06-23 | 2022-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2020
- 2020-02-20 JP JP2020026863A patent/JP7382848B2/ja active Active
-
2021
- 2021-02-08 TW TW110104594A patent/TWI874577B/zh active
- 2021-02-10 CN CN202110183119.7A patent/CN113284786B/zh active Active
- 2021-02-19 US US17/179,436 patent/US11501976B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021132126A5 (enExample) | ||
| US12154792B2 (en) | Plasma etching method | |
| TWI723049B (zh) | 原子層次解析度與電漿處理控制的方法 | |
| KR101256492B1 (ko) | 플라즈마 처리방법 | |
| JP2018186179A (ja) | 基板処理装置及び基板取り外し方法 | |
| EP2479783A3 (en) | Plasma processing apparatus and method | |
| JP2019087626A5 (enExample) | ||
| CN105390388A (zh) | 蚀刻方法 | |
| JP2000133638A (ja) | プラズマエッチング方法およびプラズマエッチング装置 | |
| US9548214B2 (en) | Plasma etching method of modulating high frequency bias power to processing target object | |
| JP6483266B2 (ja) | 基板処理方法、および、基板処理装置 | |
| TW200610052A (en) | Ashing method and ashing device | |
| JP2007208302A5 (enExample) | ||
| JP2020167186A5 (enExample) | ||
| JP2011249544A (ja) | クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法 | |
| JP4189303B2 (ja) | プラズマ処理方法 | |
| JP2004169933A5 (enExample) | ||
| TW201618156A (zh) | 電漿處理裝置及電漿處理方法 | |
| JP2020177959A5 (ja) | クリーニング方法及びプラズマ処理装置 | |
| JP2007080850A5 (enExample) | ||
| JP2009194194A (ja) | プラズマ処理方法 | |
| JP2666609B2 (ja) | プラズマ処理装置 | |
| JP4134741B2 (ja) | プラズマエッチング方法 | |
| JP2003124198A5 (enExample) | ||
| JP2006302924A5 (enExample) |