JP7382848B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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JP7382848B2
JP7382848B2 JP2020026863A JP2020026863A JP7382848B2 JP 7382848 B2 JP7382848 B2 JP 7382848B2 JP 2020026863 A JP2020026863 A JP 2020026863A JP 2020026863 A JP2020026863 A JP 2020026863A JP 7382848 B2 JP7382848 B2 JP 7382848B2
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gas
substrate
signal
chamber
upper electrode
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JP2021132126A5 (enExample
JP2021132126A (ja
Inventor
誠一 渡部
和樹 成重
林欣禾
徐建峰
黄▲藝▼豪
梁振康
呂育駿
葉秋華
趙斌
蔡財進
雄仁 渡邉
浩司 河村
賢次 小松
麗 金
陳▲偉▼▲徳▼
劉達立
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2020026863A priority Critical patent/JP7382848B2/ja
Priority to TW110104594A priority patent/TWI874577B/zh
Priority to CN202110183119.7A priority patent/CN113284786B/zh
Priority to KR1020210021336A priority patent/KR102898208B1/ko
Priority to US17/179,436 priority patent/US11501976B2/en
Publication of JP2021132126A publication Critical patent/JP2021132126A/ja
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
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    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2020026863A 2020-02-20 2020-02-20 基板処理方法および基板処理装置 Active JP7382848B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020026863A JP7382848B2 (ja) 2020-02-20 2020-02-20 基板処理方法および基板処理装置
TW110104594A TWI874577B (zh) 2020-02-20 2021-02-08 基板處理方法及基板處理裝置
CN202110183119.7A CN113284786B (zh) 2020-02-20 2021-02-10 基片处理方法和基片处理装置
KR1020210021336A KR102898208B1 (ko) 2020-02-20 2021-02-17 기판 처리 방법 및 기판 처리 장치
US17/179,436 US11501976B2 (en) 2020-02-20 2021-02-19 Substrate processing method and substrate processing apparatus

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JP2020026863A JP7382848B2 (ja) 2020-02-20 2020-02-20 基板処理方法および基板処理装置

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JP2021132126A JP2021132126A (ja) 2021-09-09
JP2021132126A5 JP2021132126A5 (enExample) 2023-02-14
JP7382848B2 true JP7382848B2 (ja) 2023-11-17

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
US20230416906A1 (en) * 2022-06-28 2023-12-28 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20250293026A1 (en) * 2024-03-15 2025-09-18 Applied Materials, Inc. High-power carbon hardmask deposition and charge dissipation

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2010192668A (ja) 2009-02-18 2010-09-02 Tokyo Electron Ltd プラズマ処理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
JP2004111381A (ja) * 2002-08-26 2004-04-08 Matsushita Electric Ind Co Ltd プラズマ処理装置及び方法
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
JP5638682B2 (ja) * 2006-03-22 2014-12-10 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
JP5916056B2 (ja) * 2010-08-23 2016-05-11 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9269587B2 (en) * 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US9966231B2 (en) * 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP7137913B2 (ja) 2017-06-23 2022-09-15 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192668A (ja) 2009-02-18 2010-09-02 Tokyo Electron Ltd プラズマ処理方法

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Publication number Publication date
TWI874577B (zh) 2025-03-01
US20210265170A1 (en) 2021-08-26
TW202139787A (zh) 2021-10-16
US11501976B2 (en) 2022-11-15
KR20210106371A (ko) 2021-08-30
JP2021132126A (ja) 2021-09-09
CN113284786B (zh) 2025-08-01
CN113284786A (zh) 2021-08-20

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