JP2021085900A - 電気光学装置および電子機器 - Google Patents
電気光学装置および電子機器 Download PDFInfo
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 77
- 229910010272 inorganic material Inorganic materials 0.000 claims description 23
- 239000011147 inorganic material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 172
- 239000010410 layer Substances 0.000 description 98
- 229910044991 metal oxide Inorganic materials 0.000 description 43
- 150000004706 metal oxides Chemical class 0.000 description 43
- 239000004973 liquid crystal related substance Substances 0.000 description 36
- 238000005530 etching Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000003860 storage Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- YDCWBDWPPAHSOR-UHFFFAOYSA-N C1CCC1.F.F.F.F.F.F.F.F Chemical compound C1CCC1.F.F.F.F.F.F.F.F YDCWBDWPPAHSOR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- VMTCKFAPVIWNOF-UHFFFAOYSA-N methane tetrahydrofluoride Chemical compound C.F.F.F.F VMTCKFAPVIWNOF-UHFFFAOYSA-N 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 silicon dioxide Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Abstract
Description
本発明の電気光学装置の一例として、アクティブマトリクス方式の液晶装置を例に説明する。
図1は、第1実施形態に係る電気光学装置100の平面図である。図2は、図1に示す電気光学装置100の断面図である。なお、図1では、対向基板4の図示を省略する。また、以下では、説明の便宜上、互いに直交するX軸、Y軸およびZ軸を適宜用いて説明する。また、X軸に沿う一方向をX1方向といい、X1方向とは反対の方向をX2方向という。同様に、Y軸に沿う一方向をY1方向といい、Y1方向とは反対の方向をY2方向という。Z軸に沿う一方向をZ1方向といい、Z1方向とは反対の方向をZ2方向という。
図3は、素子基板2の電気的な構成を示す等価回路図である。図3に示すように、素子基板2は、複数のトランジスター23と、n本の走査線244と、m本のデータ線246と、n本の容量線245と、複数の蓄積容量240とを有する。これらは、図2の積層体22に配置される。なお、nおよびmのそれぞれは2以上の整数である。また、複数のトランジスター23は、複数の画素電極26に1対1で配置される。各トランジスター23は、例えばスイッチング素子として機能するTFTである。各トランジスター23は、ゲート、ソースおよびドレインを含む。
図4は、電気光学装置100の一部を示す断面図である。図4に示すように、素子基板2は、第1基材21と、積層体22と、吸湿膜25と、複数の画素電極26と、コート層28と、第1配向膜29と、を有する。積層体22と吸湿膜25と複数の画素電極26とコート層28と第1配向膜29とは、この順に第1基材21から積層される。また、積層体22とコート層28との間には、複数のスペーサー51が配置される。また、図4では図示しないが、素子基板2は、複数の保護部30を有する。複数の保護部30は図6を参照しつつ後で説明する。なお、以下の説明では、Z1方向を上方とし、Z2方向を下方として説明する。
図4および図5に示すように、複数のスペーサー51は、複数の中継電極249に1対1で配置される。また、複数のスペーサー51は、複数の画素電極26に1対1で配置される。例えば、図5に示すように、複数のスペーサー51のうちの任意の1個のスペーサー51であるスペーサー51aは、当該スペーサー51aに対して図5中の右斜め上に位置する画素電極26に対応して配置される。また、スペーサー51aは、平面視で当該スペーサー51aに重なる中継電極249に対応する。
以下、複数のスペーサー51の製造方法、およびそれに関連する要素の製造方法を説明する。図7は、保護層30x等を形成する方法を説明するための図である。なお、以下では、スペーサー51aを代表して説明する。
以上に例示した実施形態は多様に変形され得る。前述の実施形態に適用され得る具体的な変形の態様を以下に例示する。以下の例示から任意に選択された2以上の態様は、相互に矛盾しない範囲で適宜に併合され得る。
電気光学装置100は、各種電子機器に用いることができる。
Claims (9)
- 複数の絶縁層を含む積層体と、前記積層体に配置される画素電極と、を有する第1基板と、
共通電極を有する第2基板と、
前記画素電極と前記共通電極との間に配置され、電界に応じて光学的特性が変化する電気光学層と、
前記第1基板に接続され、前記画素電極と前記共通電極との間の距離を規定するスペーサーと、を備え、
前記スペーサーは、前記第1基板の厚さ方向からみて前記画素電極に重なる第1部分と、前記厚さ方向からみて前記画素電極に重ならない第2部分と、を有することを特徴とする電気光学装置。 - 前記スペーサーは、無機材料で構成される請求項1に記載の電気光学装置。
- 前記積層体は、前記無機材料を含み、
前記第2部分は、前記積層体に接触する請求項2に記載の電気光学装置。 - 前記第1部分と前記画素電極との間に配置され、前記画素電極を保護する保護部をさらに有し、
前記保護部は、前記無機材料、および前記画素電極の材料と異なる材料で構成される膜を有する請求項2または3に記載の電気光学装置。 - 前記保護部は、遮光性を有する遮光膜を有する請求項4に記載の電気光学装置。
- 前記無機材料は、酸化ケイ素、または酸窒化ケイ素である請求項2から5のいずれか1項に記載の電気光学装置。
- 前記積層体は、前記第2部分の一部が配置される第1凹部を有する請求項1から6のいずれか1項に記載の電気光学装置。
- 前記スペーサーは、先端面を有し、
前記先端面は、第2凹部を有する請求項1から7のいずれか1項に記載の電気光学装置。 - 請求項1から8のいずれか1項に記載の電気光学装置と、
前記電気光学装置の動作を制御する制御部と、を有することを特徴とする電子機器。
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Citations (8)
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JPH0457819U (ja) * | 1990-09-21 | 1992-05-18 | ||
JPH11153798A (ja) * | 1997-11-20 | 1999-06-08 | Toshiba Corp | アクティブマトリクス型液晶表示装置 |
JP2005302808A (ja) * | 2004-04-07 | 2005-10-27 | Sharp Corp | 薄膜トランジスタアレイ基板の製造方法 |
JP2008311616A (ja) * | 2007-06-14 | 2008-12-25 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
KR20140091396A (ko) * | 2013-01-11 | 2014-07-21 | 엘지디스플레이 주식회사 | 액정표시장치의 어레이기판 및 이의 제조 방법 |
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JP2005302808A (ja) * | 2004-04-07 | 2005-10-27 | Sharp Corp | 薄膜トランジスタアレイ基板の製造方法 |
JP2008311616A (ja) * | 2007-06-14 | 2008-12-25 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
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US20150022766A1 (en) * | 2013-07-17 | 2015-01-22 | Samsung Display Co., Ltd. | Liquid crystal display |
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US20190129265A1 (en) * | 2017-10-26 | 2019-05-02 | Samsung Display Co., Ltd. | Liquid crystal display device |
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