JP2019219603A - 電気光学装置および電子機器 - Google Patents
電気光学装置および電子機器 Download PDFInfo
- Publication number
- JP2019219603A JP2019219603A JP2018118642A JP2018118642A JP2019219603A JP 2019219603 A JP2019219603 A JP 2019219603A JP 2018118642 A JP2018118642 A JP 2018118642A JP 2018118642 A JP2018118642 A JP 2018118642A JP 2019219603 A JP2019219603 A JP 2019219603A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electro
- optical device
- pixel electrode
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 51
- 150000004767 nitrides Chemical class 0.000 claims abstract description 37
- 239000010937 tungsten Substances 0.000 claims abstract description 20
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- -1 tungsten nitride Chemical class 0.000 claims abstract description 7
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 37
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 37
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 description 116
- 239000000758 substrate Substances 0.000 description 113
- 239000010410 layer Substances 0.000 description 72
- 239000004973 liquid crystal related substance Substances 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 31
- 239000003990 capacitor Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000007257 malfunction Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
1−1.第1実施形態
本発明の電気光学装置の一例として、TFT(Thin Film Transistor)をスイッチング素子として備えるアクティブマトリックス方式の液晶装置を例に説明する。
図1は、第1実施形態に係る電気光学装置の一例である液晶装置の平面図である。図2は、第1実施形態に係る液晶装置の断面図であって、図1中のA−A線断面図である。なお、以下では、説明の便宜上、図1および図2のそれぞれに示す互いに直交するx軸、y軸、およびz軸を適宜用いて説明する。
図3は、第1実施形態における素子基板の電気的な構成を示す等価回路図である。図3に示すように、素子基板2には、n本の走査線261とm本の信号線262とn本の容量線263とが形成される。ただし、nおよびmは2以上の整数である。n本の走査線261とm本の信号線262との各交差に対応してTFT25が配置される。
次に、図2に示す素子基板2の表示領域A10の部分の詳細な構成について説明する。図4は、第1実施形態における素子基板の部分平面図である。図5は、第1実施形態における素子基板の部分断面図であって、図4中のB−B線断面図である。
次に、図2に示す素子基板2の周辺領域A20の部分の詳細な構成について説明する。図9は、第1実施形態における素子基板が有する回路用遮光体を示す断面図である。
次に、素子基板2の製造方法について説明する。図10は、第1実施形態における素子基板の製造方法を示すフローチャートである。
次に、本発明の第2実施形態について説明する。図14は、第2実施形態における素子基板の拡大断面図である。
次に、本発明の第3実施形態について説明する。図15は、第3実施形態における素子基板が有する遮光体を示す平面図である。
次に、本発明の第4実施形態について説明する。図16は、第4実施形態における素子基板が有する遮光体を示す断面図である。
次に、本発明の第5実施形態について説明する。図17は、第5実施形態における素子基板が有する遮光体を示す断面図である。
次に、本発明の第6実施形態について説明する。図18は、第6実施形態における素子基板が有する遮光体を示す断面図である。
次に、本発明の第7実施形態について説明する。図19は、第7実施形態における素子基板が有する遮光体を示す断面図である。図20は、第7実施形態における素子基板が有する遮光体を示す平面図である。
電気光学装置1は、各種電子機器に用いることができる。
Claims (8)
- 透光性の画素電極と、
前記画素電極側に開口する凹部が設けられる透光性の基材と、
前記凹部に配置される遮光体と、
前記基材の厚さ方向からの平面視で前記遮光体と重なり、前記画素電極に電気的に接続されるスイッチング素子と、を備え、
前記遮光体は、タングステンを含む金属膜と、前記金属膜と前記基材との間に位置し、タングステンナイトライドを含む金属窒化膜と、を有することを特徴とする電気光学装置。 - 透光性の画素電極と、
前記画素電極側に開口する凹部が設けられる透光性の基材と、
前記凹部に配置される遮光体と、
前記基材の厚さ方向からの平面視で前記遮光体と重なり、前記画素電極に電気的に接続されるスイッチング素子と、を備え、
前記遮光体は、タングステンを含む金属膜と、前記金属膜と前記基材との間に位置し、チタンナイトライドを含む金属窒化膜と、を有することを特徴とする電気光学装置。 - 前記遮光体は、前記金属窒化膜と前記基材との間に位置し、タングステンシリサイドを含むタングステンシリサイド膜を有する請求項1又は2に記載の電気光学装置。
- 前記タングステンシリサイド膜の厚さは、前記金属窒化膜の厚さよりも厚く、かつ、前記金属膜の厚さよりも薄い請求項3記載の電気光学装置。
- 前記基材の前記画素電極側の面と前記遮光体の前記画素電極側の面とで平坦面が構成される請求項1ないし4のいずれか1項に記載の電気光学装置。
- 前記遮光体は、前記画素電極から離間するにつれて連続的に幅が広がる形状である請求項1ないし5のいずれか1項に記載の電気光学装置。
- 前記遮光体の前記基材と接する接触面は、曲面状をなす曲面部を有する請求項1ないし6のいずれか1項に記載の電気光学装置。
- 請求項1ないし7のいずれか1項に記載の電気光学装置を備えることを特徴とする電子機器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018118642A JP6665888B2 (ja) | 2018-06-22 | 2018-06-22 | 電気光学装置および電子機器 |
US16/448,150 US11092862B2 (en) | 2018-06-22 | 2019-06-21 | Electro-optical device and electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018118642A JP6665888B2 (ja) | 2018-06-22 | 2018-06-22 | 電気光学装置および電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020022784A Division JP7124837B2 (ja) | 2020-02-13 | 2020-02-13 | 電気光学装置および電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019219603A true JP2019219603A (ja) | 2019-12-26 |
JP6665888B2 JP6665888B2 (ja) | 2020-03-13 |
Family
ID=68980643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018118642A Active JP6665888B2 (ja) | 2018-06-22 | 2018-06-22 | 電気光学装置および電子機器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11092862B2 (ja) |
JP (1) | JP6665888B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11614664B2 (en) | 2019-10-29 | 2023-03-28 | Seiko Epson Corporation | Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7505184B2 (ja) * | 2019-12-16 | 2024-06-25 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001318625A (ja) * | 2000-05-08 | 2001-11-16 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法及び電子機器 |
JP2008225034A (ja) * | 2007-03-13 | 2008-09-25 | Seiko Epson Corp | 電気光学装置及び電子機器 |
US20150227013A1 (en) * | 2014-02-12 | 2015-08-13 | Boe Technology Group Co., Ltd. | Display substrate and method of manufacturing the same, and display device |
JP2015215622A (ja) * | 2007-08-09 | 2015-12-03 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP2017083679A (ja) * | 2015-10-29 | 2017-05-18 | セイコーエプソン株式会社 | 表示装置および電子機器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100243272B1 (ko) * | 1996-12-20 | 2000-03-02 | 윤종용 | 반도체 소자의 콘택 플러그 형성방법 |
JP2001035808A (ja) | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
JP3460706B2 (ja) * | 2000-08-07 | 2003-10-27 | セイコーエプソン株式会社 | 電気光学装置、電子機器、電気光学装置用基板および電気光学装置用基板の製造方法。 |
JP2005250234A (ja) | 2004-03-05 | 2005-09-15 | Seiko Epson Corp | 電気光学装置、電子機器及び電気光学装置の製造方法 |
JP4755143B2 (ja) | 2007-06-05 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8144281B2 (en) | 2007-08-09 | 2012-03-27 | Seiko Epson Corporation | Electro-optical device having a light shielding film with first, second, and third portions |
US20130300968A1 (en) * | 2011-01-27 | 2013-11-14 | Sharp Kabushiki Kaisha | Substrate for liquid crystal display panel and liquid crystal display device |
US10088727B2 (en) | 2015-10-29 | 2018-10-02 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
-
2018
- 2018-06-22 JP JP2018118642A patent/JP6665888B2/ja active Active
-
2019
- 2019-06-21 US US16/448,150 patent/US11092862B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001318625A (ja) * | 2000-05-08 | 2001-11-16 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法及び電子機器 |
JP2008225034A (ja) * | 2007-03-13 | 2008-09-25 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2015215622A (ja) * | 2007-08-09 | 2015-12-03 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
US20150227013A1 (en) * | 2014-02-12 | 2015-08-13 | Boe Technology Group Co., Ltd. | Display substrate and method of manufacturing the same, and display device |
JP2017083679A (ja) * | 2015-10-29 | 2017-05-18 | セイコーエプソン株式会社 | 表示装置および電子機器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11614664B2 (en) | 2019-10-29 | 2023-03-28 | Seiko Epson Corporation | Electro-optical device, manufacturing method of electro-optical device, and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
US11092862B2 (en) | 2021-08-17 |
US20190391453A1 (en) | 2019-12-26 |
JP6665888B2 (ja) | 2020-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6690671B2 (ja) | 電気光学装置および電子機器 | |
JP6665889B2 (ja) | 電気光学装置および電子機器 | |
JP6665888B2 (ja) | 電気光学装置および電子機器 | |
US10948786B2 (en) | Electro-optical device, electronic apparatus, and method for manufacturing electro-optical device | |
JP6939857B2 (ja) | 電気光学装置、および電子機器 | |
US10884307B2 (en) | Electro-optical device and electronic apparatus | |
JP2022139567A (ja) | 電気光学装置および電子機器 | |
JP7124837B2 (ja) | 電気光学装置および電子機器 | |
JP2021092680A (ja) | 電気光学装置および電子機器 | |
JP2021043244A (ja) | 電気光学装置および電子機器 | |
JP7207387B2 (ja) | 電気光学装置および電子機器 | |
JP7524745B2 (ja) | 電気光学装置および電子機器 | |
JP2020126250A (ja) | 電気光学装置および電子機器 | |
JP7140296B2 (ja) | 電気光学装置および電子機器 | |
JP7302398B2 (ja) | 電気光学装置および電子機器 | |
US11221528B2 (en) | Electro-optical device and electronic apparatus | |
JP7367414B2 (ja) | 電気光学装置、電気光学装置の製造方法および電子機器 | |
US20240142834A1 (en) | Electro-optical device and electronic apparatus | |
US20220238565A1 (en) | Electro-optical device and electronic apparatus | |
JP2022079973A (ja) | 電気光学装置、電気光学装置の製造方法および電子機器 | |
JP2022139554A (ja) | 電気光学装置および電子機器 | |
JP2021184028A (ja) | 液晶装置および電子機器 | |
JP2021184043A (ja) | 電気光学装置および電子機器 | |
JP2021071513A (ja) | 電気光学装置、電気光学装置の製造方法および電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20180910 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20181120 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190805 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20190805 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20190918 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191105 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20191211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200203 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6665888 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |