US20240142834A1 - Electro-optical device and electronic apparatus - Google Patents
Electro-optical device and electronic apparatus Download PDFInfo
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- US20240142834A1 US20240142834A1 US18/496,902 US202318496902A US2024142834A1 US 20240142834 A1 US20240142834 A1 US 20240142834A1 US 202318496902 A US202318496902 A US 202318496902A US 2024142834 A1 US2024142834 A1 US 2024142834A1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
An electro-optical device includes a substrate; a transistor including a semiconductor layer and a gate electrode, the semiconductor layer including a drain region to which a pixel potential is applied and extending in a first direction; a scanning line electrically coupled to the gate electrode; a first insulating layer disposed between the scanning line and the gate electrode; and a light-blocking part with a light-blocking property. The semiconductor layer, the gate electrode, the first insulating layer, and the scanning line are arranged in this order from the substrate. The light-blocking part surrounds the semiconductor layer as viewed in the first direction. The light-blocking part includes a first portion disposed at the first insulating layer. The pixel potential is applied to the light-blocking part.
Description
- The present application is based on, and claims priority from JP Application Serial Number 2022-174340, filed Oct. 31, 2022, the disclosure of which is hereby incorporated by reference herein in its entirety.
- The present disclosure relates to an electro-optical device and an electronic apparatus.
- Electro-optical devices such as liquid crystal display devices in which optical characteristics can be changed for each pixel are used for electronic apparatuses such as projectors, for example. The electro-optical device disclosed in JP-A-2020-160208 is known as an example of electro-optical devices.
- The electro-optical device disclosed in JP-A-2020-160208 includes an element substrate, an opposing substrate, and an electro-optical layer such as a liquid crystal layer disposed between the substrates. The element substrate includes a plurality of pixel electrodes, a transistor electrically coupled to the plurality of pixel electrodes, and a scanning line electrically coupled to the gate electrode of the transistor.
- In JP-A-2020-160208, the scanning line is disposed at an upper layer of the gate electrode, and a first light-blocking layer of a constant potential Vcom is disposed at the layer between the gate electrode and the scanning line. Further, a light-blocking part electrically coupled to the first light-blocking layer is provided to cover a part of a semiconductor layer of the transistor from the width direction. Such first light-blocking layer and light-blocking part block the light that is about to enter the incident semiconductor layer. In addition, since the constant potential Vcom is applied to the first light-blocking layer and the light-blocking part, the semiconductor layer is less affected by the potential of the scanning line.
- However, since the constant potential Vcom is applied to the first light-blocking layer and the light-blocking part, the potential of the first light-blocking layer and the light-blocking part is different from the potential of the semiconductor layer. In this manner, it is necessary to separate the semiconductor layer, and the first light-blocking layer and the light-blocking part, by a given distance. Since this distance is required, it is difficult to improve the light-blocking property of the semiconductor layer. Therefore, it is desirable to improve the light-blocking property against the light incident on the semiconductor layer while suppressing the influence of the potential of the scanning line on the semiconductor layer.
- An electro-optical device according to an aspect of the present disclosure includes a substrate, a transistor including a semiconductor layer and a gate electrode, the semiconductor layer including a drain region to which a pixel potential is applied and extending in a first direction, a scanning line electrically coupled to the gate electrode, a first insulating layer disposed between the scanning line and the gate electrode, and a light-blocking part with a light-blocking property, wherein the semiconductor layer, the gate electrode, the first insulating layer, and the scanning line are arranged in this order from the substrate, the light-blocking part surrounds the semiconductor layer as viewed in the first direction, the light-blocking part includes a first portion disposed at the first insulating layer, and the pixel potential is applied to the light-blocking part.
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FIG. 1 is a plan view of an electro-optical device according to an embodiment. -
FIG. 2 is a sectional view of the electro-optical device illustrated inFIG. 1 taken along a line A-A. -
FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of an element substrate ofFIG. 1 . -
FIG. 4 illustrates a part of the element substrate in the display region ofFIG. 2 . -
FIG. 5 is a sectional view taken along a line A1-A1 inFIG. 2 . -
FIG. 6 is a sectional view taken along a line A2-A2. -
FIG. 7 is a plan view of a fourth portion of a light-blocking part illustrated inFIG. 5 . -
FIG. 8 is a plan view of two first lower conductive parts illustrated inFIG. 5 and a second lower conductive part illustrated inFIG. 6 . -
FIG. 9 is a plan view of a semiconductor layer illustrated inFIG. 6 . -
FIG. 10 is a plan view of a first upper conductive part illustrated inFIG. 5 and a second upper conductive part illustrated inFIG. 6 . -
FIG. 11 is a plan view of a first portion of the light-blocking part illustrated inFIG. 5 . -
FIG. 12 is a cross-sectional perspective view illustrating a part of the light-blocking part illustrated inFIG. 5 . -
FIG. 13 is a plan view of a scanning line illustrated inFIG. 6 . -
FIG. 14 is a plan view of a pixel relay electrode illustrated inFIG. 6 . -
FIG. 15 is a plan view of a signal line illustrated inFIG. 6 . -
FIG. 16 is a perspective view illustrating a personal computer as an example of an electronic apparatus. -
FIG. 17 is a plan view illustrating a smartphone as an example of the electronic apparatus. -
FIG. 18 is a schematic view illustrating a projector as an example of the electronic apparatus. - Preferred embodiments according to the present disclosure are described below with reference to the attached drawings. Note that in the drawing the dimension or scale of each part may differ from the actual one as appropriate, and some parts are schematically illustrated for ease of understanding. The scope of the invention is not limited to these forms, unless otherwise stated in the following description to limit the disclosure.
- 1. Electro-Optical Device
- 1A. Basic Configuration
-
FIG. 1 is a plan view of an electro-optical device 100 according to the embodiment.FIG. 2 is a sectional view of the electro-optical device 100 illustrated inFIG. 1 taken along a line A-A. Note that inFIG. 1 , illustration of an opposing substrate 3 is omitted. In addition, the X axis, Y axis, and Z axis orthogonal to one another are used as necessary in the following description for convenience of description. In addition, one direction along the X axis is denoted as X1 direction, and the direction opposite to the X1 direction is denoted as X2 direction. Likewise, one direction along the Y axis is denoted as Y1 direction, and the direction opposite to the Y1 direction is denoted as Y2 direction. One direction along the Z axis is denoted as Z1 direction, and the direction opposite to the Z1 direction is denoted as Z2 direction. In addition, the Y1 direction or the Y2 direction is an example of the “first direction”. - In addition, in this specification, “an element β on an element α” means that the element β is located on the upper side of the element α. Therefore, “an element β on an element α” includes not only a case where the element β is in direct contact with element α, but also a case where the element α and the element β are separated from each other. In addition, “electrical coupling” between the element α and the element β includes not only a configuration where the element α and the element β conduct by being directly joined to each other, but also a configuration where the element α and the element β indirectly conduct through another conductive material.
- The electro-
optical device 100 illustrated inFIGS. 1 and 2 is a transmissive electro-optical device of an active matrix driving type. As illustrated inFIG. 2 , the electro-optical device 100 includes anelement substrate 2, the opposing substrate 3, a frame-shaped sealing member 4, and aliquid crystal layer 5. As illustrated inFIG. 2 , theelement substrate 2, theliquid crystal layer 5 and the opposing substrate 3 are arranged in this order in the Z1 direction. Note that the viewing from their overlapping direction, namely the Z1 direction or the Z2 direction, is referred to as “plan view”. In addition, the shape of the electro-optical device 100 illustrated inFIG. 1 in plan view is quadrangle, but may be polygons other than quadrangle, or circles. - The
element substrate 2 illustrated inFIG. 2 includes afirst substrate 21 having a light-transmitting property, alayered body 22 having a light-transmitting property, a plurality ofpixel electrodes 25 having a light-transmitting property, and afirst orientation film 29 having a light-transmitting property. Thefirst substrate 21, thelayered body 22, the plurality ofpixel electrodes 25, and thefirst orientation film 29 are layered in this order in the Z1 direction. Note that the “light-transmitting property” means transmissivity with respect to visible light, and may mean a transmittance of visible light of 50% or greater. In addition, as will be described later in detail, theelement substrate 2 includes a light-blockingpart 6 having a light-blocking property illustrated inFIGS. 5 and 6 . Note that “light-blocking property” means a light-blocking property to visible light, may mean a transmittance to visible light of smaller than 50%, and may mean a transmittance to visible light of 10% or smaller. - The
first substrate 21 corresponds to “substrate”. Thefirst substrate 21 is a flat plate having a light-transmitting property and an insulating property, and is composed of a glass substrate or a quartz substrate, for example. Thelayered body 22 includes a plurality of insulating films having a light-transmitting property. In addition, thelayered body 22 is provided with various wiring lines and the like. Thepixel electrode 25 is used for applying an electric field to theliquid crystal layer 5. Thepixel electrode 25 includes a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped tin oxide (FTO). Note that although not illustrated in the drawings, theelement substrate 2 includes a plurality of dummy pixel electrodes surrounding the plurality ofpixel electrodes 25 in plan view. In addition, thefirst orientation film 29 has a light-transmitting property and an insulating property. Thefirst orientation film 29 aligns liquid crystal molecules in theliquid crystal layer 5. Thefirst orientation film 29 is disposed to cover the plurality ofpixel electrodes 25. The material of thefirst orientation film 29 is polyimide, silicon oxide and the like, for example. - The opposing substrate 3 is disposed opposite to the
element substrate 2. The opposing substrate 3 includes asecond substrate 31 having a light-transmitting property, an inorganic insulatinglayer 32 having a light-transmitting property, acommon electrode 33 having a light-transmitting property, and asecond orientation film 34 having a light-transmitting property. In addition, although not illustrated in the drawings, the opposing substrate 3 includes a light-blocking parting that surrounds the plurality ofpixel electrodes 25 in plan view. - The
second substrate 31, the inorganic insulatinglayer 32, thecommon electrode 33, and thesecond orientation film 34 are layered in this order in the Z2 direction. Thesecond substrate 31 is a flat plate having a light-transmitting property and an insulating property, and is composed of a glass substrate or a quartz substrate, for example. The inorganic insulatinglayer 32 has a light-transmitting property and an insulating property, and is made of an inorganic material containing silicon such as silicon oxide, for example. Thecommon electrode 33 is an opposing electrode disposed opposite to the plurality ofpixel electrodes 25 through theliquid crystal layer 5. Thecommon electrode 33 is used for applying an electric field to theliquid crystal layer 5. Thecommon electrode 33 has a light-transmitting property and conductivity. Thecommon electrode 33 includes a transparent conductive material such as ITO, IZO and FTO. Thesecond orientation film 34 has a light-transmitting property and an insulating property. Thesecond orientation film 34 aligns liquid crystal molecules in theliquid crystal layer 5. The material of thesecond orientation film 34 is polyimide, silicon oxide and the like, for example. - The sealing
member 4 is disposed between theelement substrate 2 and the opposing substrate 3. The sealingmember 4 is formed by using an adhesive agent including various curable resins such as epoxy resins, or the like. The sealingmember 4 may include a gap material composed of an inorganic material such as glass. - The
liquid crystal layer 5 is disposed in a region surrounded by theelement substrate 2, the opposing substrate 3, and the sealingmember 4. Theliquid crystal layer 5 is an electro-optical layer with optical characteristics that change in accordance with the electric field. Theliquid crystal layer 5 contains liquid crystal molecules with positive or negative dielectric anisotropy. The orientation of the liquid crystal molecules changes in accordance with the voltage applied to theliquid crystal layer 5. - As illustrated in
FIG. 1 , a plurality of scanningline driving circuits 11, a signalline driving circuit 12 and a plurality ofexternal terminals 13 are disposed at theelement substrate 2. Some of the plurality ofexternal terminals 13 are coupled with a wiring line drawn from the scanningline driving circuit 11 or the signalline driving circuit 12 although not illustrated in the drawings. In addition, the plurality ofexternal terminals 13 includes a terminal to which a constant potential Vcom is applied. The terminal is electrically coupled to thecommon electrode 33 of the opposing substrate 3 through a wiring line and a conductive material (not illustrated). In this manner, the constant potential Vcom is supplied to thecommon electrode 33. - The electro-
optical device 100 includes a display region A10 that displays images, and a peripheral region A20 located outside the display region A10 in plan view. A plurality of pixels P arranged in a matrix is provided in the display region A10. The plurality ofpixel electrodes 25 is disposed in a one-to-one relationship for the plurality of pixels P. The above-describedcommon electrode 33 is provided commonly to the plurality of pixels P. In addition, the peripheral region A20 surrounds the display region A10 in plan view. The scanningline driving circuit 11 and the signalline driving circuit 12 are disposed in the peripheral region A20. - In this embodiment, the electro-
optical device 100 is of a transmissive type. More specifically, as illustrated inFIG. 2 , after entering the opposing substrate 3, light LL is modulated before being emitted from theelement substrate 2, whereby an image is displayed. Note that light having entered theelement substrate 2 may be modulated before being emitted from the opposing substrate 3, whereby an image is displayed. - In addition, the electro-
optical device 100 is applied to display devices that perform color display such as personal computers and smartphones to be described later, for example. When applied to the display device, a color filter is used for the electro-optical device 100 as necessary. In addition, the electro-optical device 100 is applied to projection-type projectors to be described later. In this case, the electro-optical device 100 functions as a light valve. Note that in this case, the color filter is omitted for the electro-optical device 100. - 1B. Electrical Configuration of
Element Substrate 2 -
FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of theelement substrate 2 ofFIG. 1 . As illustrated inFIG. 3 , theelement substrate 2 includes a plurality oftransistors 23,n scanning lines 241, msignal lines 242 and n constantpotential lines 243. The n and m are each an integer of 2 or greater. Thetransistor 23 is disposed in a manner corresponding to each intersection of then scanning lines 241 and the m signal lines 242. Eachtransistor 23 is a thin film transistor (TFT) that functions as a switching element, for example. Eachtransistor 23 includes a gate, a source, and a drain. - The
n scanning lines 241 are extended in the X1 direction, and then scanning lines 241 are arranged at even intervals in the Y1 direction. Then scanning lines 241 are respectively electrically coupled to the gates of the plurality ofcorresponding transistors 23. Then scanning lines 241 is electrically coupled to the scanningline driving circuit 11 illustrated inFIG. 1 . Scanning signals G1, G2 . . . and Gn are line-sequentially supplied to one ton scanning lines 241 from the scanningline driving circuit 11. - The
m signal lines 242 illustrated inFIG. 3 are extended in the Y1 direction, and them signal lines 242 are arranged at even intervals in the X1 direction. Them signal lines 242 are respectively electrically coupled to the sources of the plurality ofcorresponding transistors 23. Them signal lines 242 are electrically coupled to the signalline driving circuit 12 illustrated inFIG. 1 . Image signals S1, S2 . . . and Sm are supplied in parallel to one to msignal lines 242 from the signalline driving circuit 12. - The
n scanning lines 241 and them signal lines 242 illustrated inFIG. 3 are electrically isolated from each other, and disposed in a grid form in plan view. The region surrounded by adjacent two scanninglines 241 and adjacent twosignal lines 242 corresponds to a pixel P. Thetransistor 23, thepixel electrode 25 and acapacitive element 24 are provided for each pixel P. Thepixel electrode 25 is provided in a one-to-one relationship for thetransistor 23. Eachpixel electrode 25 is electrically coupled to the drain of the correspondingtransistor 23. - The n constant
potential lines 243 are extended in the X1 direction, and the n constantpotential lines 243 are arranged at even intervals in the Y2 direction. In addition, the n constantpotential lines 243 are electrically isolated from then scanning lines 241 and them signal lines 242, and are disposed with a space therebetween. The constant potential Vcom is applied to each constantpotential line 243. Each of the n constantpotential lines 243 is electrically coupled to one of the two electrodes of the correspondingcapacitive element 24. Eachcapacitive element 24 is a capacitive element for holding the potential of thepixel electrode 25. Thecapacitive element 24 is provided in a one-to-one relationship for thetransistor 23. In addition, the other of the two electrodes of eachcapacitive element 24 is electrically coupled to thecorresponding pixel electrode 25. Therefore, the constant potential Vcom is applied to one electrode of thecapacitive element 24, and the other electrode is electrically coupled to the drain of thetransistor 23. - When the scanning signals G1, G2 . . . and Gn sequentially become active and the
n scanning lines 241 are sequentially selected, thetransistor 23 coupled with the selectedscanning line 241 is turned on. Then, the image signals S1, S2 . . . and Sm with values corresponding to the gradation to be displayed through them signal lines 242 are taken by the pixel P corresponding to the selectedscanning line 241, and applied to thepixel electrode 25. In this manner, the voltage corresponding to the gradation to be displayed is applied to the liquid crystal capacitance formed between thepixel electrode 25 and thecommon electrode 33 inFIG. 2 , and the orientation of the liquid crystal molecules changes in accordance with the applied voltage. In addition, the applied voltage is held by thecapacitive element 24. Such a change of the orientation of the liquid crystal molecules modulates the light and achieves gradation display. - 1C. Structure of Part of
Element Substrate 2 -
FIG. 4 illustrates a part of theelement substrate 2 in the display region A10 ofFIG. 2 . As illustrated inFIG. 4 , the display region A10 includes a plurality of opening regions A11, and a light-blocking region A12. The plurality of opening regions A11 is disposed in a matrix in plan view. The shape of the light-blocking region A12 in plan view is a frame shape located between the plurality of opening regions A11. Each opening region A11 is a region where thepixel electrode 25 is disposed, and is a portion through which light is transmitted. On the other hand, thetransistor 23 is disposed in the light-blocking region A12. In addition, although not illustrated inFIG. 4 , various wiring lines such as thescanning line 241, thesignal line 242 and the constantpotential line 243, and thecapacitive element 24 illustrated inFIG. 3 are disposed in the light-blocking region A12. -
FIG. 5 is a sectional view taken along a line A1-A1 inFIG. 2 .FIG. 6 is a sectional view taken along a line A2-A2. As illustrated inFIGS. 5 and 6 , theelement substrate 2 includes thefirst substrate 21 as “substrate”, thelayered body 22, and the light-blockingpart 6. Thelayered body 22 includes a plurality of insulatingfilms films first substrate 21. In addition, the insulatingfilms layer 220. The insulatingfilms 221 to 227 have a light-transmitting property and an insulating property. Each material of the insulatingfilms 221 to 227 is an inorganic material containing silicon such as silicon oxide and silicon oxynitride, for example. - The
transistor 23, thescanning line 241, thesignal line 242, and the light-blockingpart 6 are disposed at thelayered body 22. Further, apixel relay electrode 244, andrelay electrodes layered body 22. Theelement substrate 2 is described below with reference toFIGS. 5 and 6 and by usingFIGS. 7 to 15 to be described later. - As described above, the
first substrate 21 illustrated inFIGS. 5 and 6 is composed of a glass substrate or a quartz substrate, for example. Thefirst substrate 21 includes arecess 210. Therecess 210 is a depression formed in thefirst substrate 21, and formed for eachtransistor 23. Therecess 210 is formed along the Y1 direction, which is the extending direction of asemiconductor layer 231 to be described later. Therecess 210 is formed by a damascene method. - A part of the light-blocking
part 6 is disposed in therecess 210. The light-blockingpart 6 is provided for preventing the entry of light into thesemiconductor layer 231 of thetransistor 23. The light-blockingpart 6 includes afirst portion 61, twosecond portions 62, athird portion 63, and afourth portion 64. Eachsecond portion 62 includes a first lowerconductive part 621 and a first upperconductive part 622. Thethird portion 63 includes a second lowerconductive part 631 and a second upperconductive part 632. Thefourth portion 64 is disposed in therecess 210. -
FIG. 7 is a plan view of thefourth portion 64 of the light-blockingpart 6 illustrated inFIG. 5 . In plan view, thefourth portion 64 extends in the Y1 direction and includes awide portion 641 in the middle portion. With thefourth portion 64 provided in therecess 210, peeling of thefourth portion 64 from thefirst substrate 21 and warp of thefirst substrate 21 can be suppressed in comparison with the case where thefourth portion 64 is provided to protrude from thefirst substrate 21. Note that therecess 210 may not be provided in thefirst substrate 21, and thefourth portion 64 may be provided to protrude from the flat top surface of thefirst substrate 21. - As illustrated in
FIG. 5 , the first lowerconductive part 621 of eachsecond portion 62 of the light-blockingpart 6 is provided at the insulatingfilm 221. In addition, as illustrated inFIG. 6 , the second lowerconductive part 631 of thethird portion 63 is provided at the insulatingfilm 221. The first lowerconductive part 621 and the second lowerconductive part 631 are disposed in a through hole formed in the insulatingfilm 221. The first lowerconductive part 621 and the second lowerconductive part 631 are joined to thefourth portion 64. -
FIG. 8 is a plan view of the first lowerconductive part 621 illustrated inFIG. 5 and the second lowerconductive part 631 illustrated inFIG. 6 . As illustrated inFIG. 8 , two first lowerconductive parts 621 and the second lowerconductive part 631 are integrally formed. Each of the two first lowerconductive parts 621 extends along the Y1 direction in plan view. The second lowerconductive part 631 extends in the X1 direction in plan view, located between the two first lowerconductive parts 621, and coupled to the two first lowerconductive parts 621. In addition, the two first lowerconductive parts 621 and the second lowerconductive part 631 overlap thewide portion 641 of thefourth portion 64 in plan view. - As illustrated in
FIGS. 5 and 6 , thetransistor 23 is disposed on the insulatingfilm 221. Thetransistor 23 includes thesemiconductor layer 231, agate electrode 232, and agate insulating film 233. Thesemiconductor layer 231 is disposed on the insulatingfilm 221, and thegate electrode 232 is disposed on an insulatingfilm 222. Thegate insulating film 233 is interposed between thegate electrode 232 and achannel region 231 c of thesemiconductor layer 231. The region corresponding to thegate electrode 232 in the insulatingfilm 222 corresponds to thegate insulating film 233. -
FIG. 9 is a plan view of thesemiconductor layer 231 illustrated inFIG. 6 . Thesemiconductor layer 231 has a lightly doped drain (LDD) structure. More specifically, thesemiconductor layer 231 includes adrain region 231 a, asource region 231 b, thechannel region 231 c, a low-concentration drain region 231 d and a low-concentration source region 231 e. Thechannel region 231 c is located between thedrain region 231 a and thesource region 231 b. The low-concentration drain region 231 d is located between thechannel region 231 c and thedrain region 231 a. The low-concentration source region 231 e is located between thechannel region 231 c and thesource region 231 b. Thesemiconductor layer 231 is made of polysilicon, for example. The region excluding thechannel region 231 c is doped with impurities that increase conductivity. The impurity concentration in the low-concentration drain region 231 d is lower than the impurity concentration in thedrain region 231 a. The impurity concentration in the low-concentration source region 231 e is lower than the impurity concentration in thesource region 231 b. Note that the low-concentration source region 231 e may be omitted, for example. - The
semiconductor layer 231 extends in the Y1 direction in plan view as with thefourth portion 64, and overlaps thefourth portion 64. In addition, thedrain region 231 a overlaps the second lowerconductive part 631 of thethird portion 63 in plan view. In addition, in plan view, the two first lowerconductive parts 621 of thesecond portion 62 separated from the low-concentration drain region 231 d are provided on both sides of the low-concentration drain region 231 d. In other words, in plan view, the low-concentration drain region 231 d is provided between the two first lowerconductive parts 621 with a space therebetween. - The
gate electrode 232 illustrated inFIG. 6 is made of polysilicon doped with impurities that increase conductivity, for example. Note that thegate electrode 232 may be made of conductive materials of metals, metal oxides, and metal compounds. In addition, thegate insulating film 233 is composed of a silicon oxide film deposited by a heat oxidation or chemical vapor deposition (CVD) method or the like film. - As illustrated in
FIG. 5 , the first upperconductive part 622 of thesecond portion 62 is disposed at the insulatingfilms FIG. 6 , the second upperconductive part 632 of thethird portion 63 is disposed at the insulatingfilms -
FIG. 10 is a plan view of the first upperconductive part 622 illustrated inFIG. 5 and the second upperconductive part 632 illustrated inFIG. 6 . As illustrated inFIG. 10 , the two first upperconductive parts 622 and the second upperconductive part 632 are integrally formed. The two first upperconductive parts 622 extend along the Y1 direction in plan view. The two first upperconductive parts 622 overlap the two first lowerconductive parts 621 in plan view. In addition, the second upperconductive part 632 is extended in the X1 direction in plan view, located between the two first upperconductive parts 622, and coupled to the two first upperconductive parts 622. The second upperconductive part 632 overlaps the second lowerconductive part 631 in plan view. In addition, as illustrated inFIG. 10 , the above-describedgate electrode 232 overlaps thechannel region 231 c in plan view. - As illustrated in
FIG. 5 , the first upperconductive part 622 and the first lowerconductive part 621 are joined to each other. Likewise, the second upperconductive part 632 and the second lowerconductive part 631 are joined to each other. In addition, as illustrated inFIG. 6 , thesemiconductor layer 231 is disposed between the second upperconductive part 632 and the second lowerconductive part 631. More specifically, thedrain region 231 a is provided between the second upperconductive part 632 and the second lowerconductive part 631. Then, the second upperconductive part 632 and the second lowerconductive part 631 are joined to thedrain region 231 a. In this manner, thesecond portion 62 is electrically coupled to thedrain region 231 a, and the pixel potential is supplied to thesecond portion 62. - As illustrated in
FIGS. 5 and 6 , thefirst portion 61 of the light-blockingpart 6 is disposed at insulatingfilm 223. In other words, thefirst portion 61 is disposed at the insulatinglayer 220. Thefirst portion 61 is formed by a damascene method, for example. Thescanning line 241 is disposed on the insulatinglayer 220, and thus the insulatinglayer 220 is disposed between thescanning line 241 and thegate electrode 232. Thus, thesemiconductor layer 231, thegate electrode 232, the insulatinglayer 220, thescanning line 241, and thefirst substrate 21 are disposed side by side in this order. In addition, thefirst portion 61 is joined to twosecond portions 62 and thethird portion 63. In addition, as illustrated inFIG. 6 , arelay electrode 246 is disposed on insulatingfilm 223 in addition to thefirst portion 61. Therelay electrode 246 is electrically coupled to thesource region 231 b of thesemiconductor layer 231 through acontact hole 271 extending through the insulatingfilms -
FIG. 11 is a plan view of thefirst portion 61 of the light-blockingpart 6 illustrated inFIG. 5 . As illustrated inFIG. 11 , thefirst portion 61 has a substantially quadrangular shape in plan view and overlaps thewide portion 641 of thefourth portion 64. In addition, thefirst portion 61 overlaps twosecond portions 62 and thethird portion 63 in plan view. In addition, thefirst portion 61 overlaps the low-concentration drain region 231 d and thedrain region 231 a in plan view. -
FIG. 12 is a cross-sectional perspective view illustrating a part of theelement substrate 2 illustrated inFIG. 5 . As described above, the light-blockingpart 6 includes thefirst portion 61, the twosecond portions 62, thethird portion 63, and thefourth portion 64. As illustrated inFIG. 12 , the light-blockingpart 6 is provided to cover a part of thesemiconductor layer 231. In addition, as illustrated inFIG. 5 , the light-blockingpart 6 surrounds thesemiconductor layer 231 as viewed in the Y1 direction, which is the extending direction of thesemiconductor layer 231. By surrounding thesemiconductor layer 231 with the light-blockingpart 6, incidence of light on thesemiconductor layer 231 can be suppressed by the light-blockingpart 6. More specifically, in addition to the entry of light in the Z2 direction toward thesemiconductor layer 231, the entry of light from a direction other than the Z2 direction due to interface reflection and the like can be suppressed. - In addition, the
first portion 61 of the light-blockingpart 6 is disposed at the insulatinglayer 220. That is, thefirst portion 61 is provided between thescanning line 241 and thegate electrode 232. In this manner, the influence of the potential of thescanning line 241 on thesemiconductor layer 231 of the lower layer of thegate electrode 232 can be suppressed. More specifically, the increase in off-leak current due to the gate potential coming closer to the region other than thechannel region 231 c of thesemiconductor layer 231 can be suppressed. In this manner, the reduction in display quality due to the occurrence of black spots and the like can be suppressed. Note that the off-leak current is a leakage current that flows when thetransistor 23 is turned off. - Further, the pixel potential is applied to the light-blocking
part 6. In this manner, since the light-blockingpart 6 is not a gate potential, there is no risk of the influence of the above-described gate potential even when the light-blockingpart 6 is disposed near thesemiconductor layer 231. In addition, the pixel potential is applied to the light-blockingpart 6, and the pixel potential is applied to thedrain region 231 a of thesemiconductor layer 231. Thus, the potential of the light-blockingpart 6 and the potential of a part of thesemiconductor layer 231 are the same potential. Therefore, defects less occur even when the light-blockingpart 6 is brought closer to thesemiconductor layer 231, and thus the light-blockingpart 6 can be brought closer to thesemiconductor layer 231 than in the related art. Thus, the light-blocking property of thesemiconductor layer 231 by the light-blockingpart 6 can be increased than in the related art. In this manner, the destabilization of the operation of thetransistor 23 can be suppressed, and as a result the risk of the occurrence of display defects such as luminance unevenness can be suppressed. - In addition, as described above, the
first portion 61 overlaps the low-concentration drain region 231 d ofsemiconductor layer 231 in plan view. In this manner, the influence of the potential of thescanning line 241 on the low-concentration drain region 231 d can be suppressed. Therefore, the drain leakage current when thetransistor 23 is turned off can be suppressed. - In addition, as described above, the light-blocking
part 6 includes the twosecond portions 62. As illustrated inFIG. 5 , the twosecond portions 62 extend from thefirst portion 61 toward thefirst substrate 21, and are located on both sides of thesemiconductor layer 231 as viewed in the Y1 direction, respectively. With the twosecond portions 62 included, the entry of light into thesemiconductor layer 231 from the X1 direction and the X2 direction due to interface reflection and the like can be suppressed. - Further, as illustrated in
FIG. 6 , the light-blockingpart 6 includes thethird portion 63. Thethird portion 63 is joined to thedrain region 231 a. Specifically, the light-blockingpart 6 includes a portion electrically coupled to thedrain region 231 a. In this manner, the light-blockingpart 6 is electrically coupled to thedrain region 231 a, and the pixel potential is supplied to the light-blockingpart 6. In addition, since the light-blockingpart 6 is directly coupled to thesemiconductor layer 231, the distance between the light-blockingpart 6 and thesemiconductor layer 231 is very smaller than in the related art. Specifically, the light-blockingpart 6 has a proximal light-blocking structure in which the distance to thesemiconductor layer 231 is small. Thus, the light-blocking property of the light-blockingpart 6 can be especially effectively increased. In addition, thethird portion 63 extends from thefirst portion 61 toward thefirst substrate 21, is located between the twosecond portions 62 as viewed in the Y1 direction, and is coupled to the twosecond portions 62. With thefirst portion 61, thesecond portion 62 and thethird portion 63, the entry of light from the X1 direction, the X2 direction, the Y1 direction and the Z2 direction toward thesemiconductor layer 231, especially the low-concentration drain region 231 d, can be suppressed. - In addition, the light-blocking
part 6 includes thefourth portion 64. Thefourth portion 64 is disposed between thefirst substrate 21 and thesemiconductor layer 231. With thefourth portion 64, the entry of light into thesemiconductor layer 231 from the Z2 direction can be suppressed. Thus, with the light-blockingpart 6 including thefirst portion 61, thesecond portion 62, thethird portion 63 and thefourth portion 64, the entry of light into the low-concentration drain region 231 d from various directions can be blocked. - Examples of the material of the light-blocking
part 6 include metals such as tungsten (W), titanium (Ti), chromium (Cr), iron (Fe) and aluminum (Al), metal nitrides and metal silicides, for example. Among them, the light-blockingpart 6 may contain tungsten. Among various metals, tungsten is excellent in heat resistance, and its optical density (OD) value does not decrease easily by heat treatment during manufacturing, for example. Thus, with the light-blockingpart 6 containing tungsten, the entry of light into thesemiconductor layer 231 can be especially effectively prevented by the light-blockingpart 6. In addition, the material of each portion of the light-blockingpart 6 may be identical to or different from each other. - As illustrated in
FIGS. 5 and 6 , thescanning line 241 is disposed on an insulatingfilm 224. In addition, as illustrated inFIG. 6 , therelay electrodes film 224. Thescanning line 241 is electrically coupled to thegate electrode 232 through acontact hole 272 extending through the insulatinglayer 220. Therelay electrode 245 is electrically coupled to thefirst portion 61 through acontact hole 273 extending through the insulatingfilm 224. Arelay electrode 247 is electrically coupled to therelay electrode 246 through acontact hole 274 extending through the insulatingfilm 224. -
FIG. 13 is a plan view of thescanning line 241 illustrated inFIG. 6 . As illustrated inFIG. 13 , thescanning line 241 extends in the X1 direction. In addition, thescanning line 241 includes a portion overlapping thegate electrode 232 in plan view to achieve electrical coupling to thegate electrode 232. - As illustrated in
FIG. 6 , thepixel relay electrode 244 and therelay electrode 248 are disposed on an insulatingfilm 225. Thepixel relay electrode 244 is electrically coupled to therelay electrode 245 through acontact hole 275 extending through the insulatingfilm 225. In this manner, thepixel relay electrode 244 is electrically coupled to thedrain region 231 a. As illustrated inFIG. 5 , thepixel relay electrode 244 is electrically coupled to thepixel electrode 25 not illustrated in the drawing through acontact hole 278 extending through the insulatingfilms contact hole 278, a conductive coupling member that electrically couples thepixel relay electrode 244 and thepixel electrode 25 is disposed. The coupling member is a plug made of a metal, for example. Thepixel relay electrode 244 is electrically coupled to thepixel electrode 25 and thedrain region 231 a of thetransistor 23 through the coupling member and the like. In addition, therelay electrode 248 is electrically coupled to therelay electrode 247 through acontact hole 276 extending through the insulatingfilm 225. -
FIG. 14 is a plan view of thepixel relay electrode 244 illustrated inFIG. 6 . As illustrated inFIG. 14 , thepixel relay electrode 244 includes a portion overlapping thefirst portion 61 in plan view, and protruding portions extending in the X2 direction and the Y1 direction from that portion. - As illustrated in
FIG. 6 , thesignal line 242 is disposed on the insulatingfilm 226. Thesignal line 242 is electrically coupled to therelay electrode 248 through acontact hole 277 extending through the insulatingfilm 226.FIG. 15 is a plan view of thesignal line 242 illustrated inFIG. 6 . As illustrated inFIG. 15 , thesignal line 242 extends along the Y1 direction. - Note that although not illustrated in the drawings, the
pixel electrode 25, thecapacitive element 24, and the constantpotential line 243 are disposed on the upper side of the insulatingfilm 227 illustrated inFIGS. 5 and 6 . - In addition, the material of the
scanning line 241, thesignal line 242, the constantpotential line 243, thepixel relay electrode 244, therelay electrodes contact holes 271 to 278 is not limited, and examples of the material include metals such as tungsten, titanium, chromium, iron and aluminum, metal nitrides and metal silicides. - Note that for example, after the contact holes 271 to 278 are formed in the corresponding insulating film, the contact holes 271 to 278 are filled with a metal such as tungsten, and thereafter the surface of the insulating film is formed into a continuous flat surface by chemical mechanical polishing or the like. As a result, the contact holes 271 to 278 are formed as plugs. Note that the contact holes 271 to 278 may be integrally formed with various wiring lines or electrodes formed thereon.
- 2. Modifications
- Embodiments exemplified above may be modified in various manners. Aspects of specific modifications applicable to the above-described embodiments are described below. Two or more aspects freely selected from the following examples may be combined as appropriate to the extent that they are not inconsistent with each other.
- While the electro-
optical device 100 of an active matrix type is exemplified in the above-described embodiments, this is not limitative, and the driving type of the electro-optical device 100 may be a passive matrix type and the like, for example. - The driving type of “electro-optical device” is not limited to a vertical electric field type, and may be a horizontal electric field type. Note that examples of the horizontal electric field type include an in-plane switching (IPS) mode. In addition, examples of the vertical electric field type include a twisted nematic (TN) mode, a vertical alignment (VA), a PVA mode, and an optically compensated bend (OCB) mode.
- While the
first portion 61 overlaps the low-concentration drain region 231 d and thedrain region 231 a in plan view in the above description, thefirst portion 61 may overlap another region. - The
third portion 63 is joined to thedrain region 231 a in the above description. However, it suffices that the light-blockingpart 6 is a pixel potential, and thethird portion 63 may not be directly coupled to thedrain region 231 a. - While the
fourth portion 64 is disposed inside therecess 210 of thefirst substrate 21 in the above description, thefourth portion 64 may be disposed at a flat top surface of thefirst substrate 21. Therefore, thefourth portion 64 may be protruded from thefirst substrate 21. - 3. Electronic Apparatus
- The electro-
optical device 100 may be used for various electronic apparatuses. -
FIG. 16 is a perspective view illustrating apersonal computer 2000 as an example of an electronic apparatus. Thepersonal computer 2000 includes the electro-optical device 100 that displays various images, amain body part 2010 where apower switch 2001 and akeyboard 2002 are installed, and acontrol unit 2003. Thecontrol unit 2003 includes a processor and a memory, and controls the operation of the electro-optical device 100, for example. -
FIG. 17 is a plan view illustrating asmartphone 3000 as an example of the electronic apparatus. Thesmartphone 3000 includes anoperation button 3001, the electro-optical device 100 that displays various images, and acontrol unit 3002. The screen content displayed on the electro-optical device 100 is changed in accordance with the operation of theoperation button 3001. Thecontrol unit 3002 includes a processor and a memory, and controls the operation of the electro-optical device 100, for example. -
FIG. 18 is a schematic view illustrating a projector as an example of the electronic apparatus. A projection-type display device 4000 is a projector of a three plate type, for example. An electro-optical device 1 r is the electro-optical device 100 corresponding to the red display color, an electro-optical device 1 g is the electro-optical device 100 corresponding to the green display color, and an electro-optical device 1 b is the electro-optical device 100 corresponding to the blue display color. That is, the projection-type display device 4000 includes the three electro-optical devices control unit 4005 includes a processor and a memory, and controls the operation of the electro-optical device 100, for example. - Of light emitted from an
illumination apparatus 4002 serving as the light source, the illuminationoptical system 4001 supplies the red component r to the electro-optical device 1 r, the green component g to the electro-optical device 1 g, and the blue component b to the electro-optical device 1 b. Each of the electro-optical devices optical system 4001 in accordance with the display image. A projectionoptical system 4003 combines and projects light emitted from each of the electro-optical devices projection surface 4004. - The above-described electronic apparatus includes the electro-
optical device 100, and thecontrol units optical device 100 has an excellent light-blocking property because of the light-blockingpart 6 of thesemiconductor layer 231, and thus the destabilization of the operation of thetransistor 23 is suppressed. In this manner, the risk of the occurrence of display defects is suppressed. Thus, with the electro-optical device 100, the display quality of thepersonal computer 2000, thesmartphone 3000, or the projection-type display device 4000 can be increased. - Note that electronic apparatuses to which the electro-optical device of the present disclosure is applied are not limited to the exemplified apparatuses, and examples of the electronic apparatuses to which the electro-optical device of the present disclosure is applied include personal digital assistants (PDA), digital still cameras, televisions, video camcorders, car navigation systems, in-vehicle displays, electronic notebooks, electronic papers, calculators, word processors, workstations, television phones, and point-of-sale (POS) terminals. Further, examples of electronic apparatuses to which the present disclosure is applied include printers, scanners, copiers, video players, or apparatuses including a touch panel.
- Hereinabove, the present disclosure has been described based on preferred embodiments, but the present disclosure is not limited to the above-described embodiments. In addition, the configuration of each part of the present disclosure may be replaced with any configuration that exhibits functions similar to those of the above-described embodiment, and any configuration may be added.
- In addition, while as a liquid crystal display device has been described as an example of the electro-optical device of the present disclosure in the above description, the electro-optical device of the present disclosure is not limited to this. For example, the electro-optical device of the present disclosure may be applied to image sensors and the like.
Claims (10)
1. An electro-optical device comprising:
a substrate;
a transistor including a semiconductor layer and a gate electrode, the semiconductor layer including a drain region to which a pixel potential is applied and extending in a first direction;
a scanning line electrically coupled to the gate electrode;
an insulating layer disposed between the scanning line and the gate electrode; and
a light-blocking part with a light-blocking property, wherein
the semiconductor layer, the gate electrode, the insulating layer, the scanning line are arranged in this order from the substrate,
the light-blocking part surrounds the semiconductor layer as viewed in the first direction,
the light-blocking part includes a first portion disposed at the insulating layer, and
the pixel potential is applied to the light-blocking part.
2. The electro-optical device according to claim 1 , wherein
the semiconductor layer includes the drain region, a source region, a channel region located between the drain region and the source region in plan view, and a low-concentration drain region located between the drain region and the channel region in plan view and
the first portion overlaps the low-concentration drain region in plan view.
3. The electro-optical device according to claim 1 , wherein
the light-blocking part includes two second portions extending from the first portion toward the substrate, the two second portions located on both sides of the semiconductor layer as viewed in the first direction, respectively.
4. The electro-optical device according to claim 1 , wherein
the light-blocking part includes a third portion joined to the drain region.
5. The electro-optical device according to claim 3 , wherein
the light-blocking part includes a third portion joined to the drain region and
the third portion extends from the first portion toward the substrate, is located between the two second portions as viewed in the first direction, and is joined to the two second portions.
6. The electro-optical device according to claim 1 , wherein
the light-blocking part includes a fourth portion disposed between the substrate and the semiconductor layer.
7. The electro-optical device according to claim 1 , further comprising:
a pixel electrode;
a pixel relay electrode; and
a coupling member, wherein
the transistor is provided corresponding to the pixel electrode,
the pixel relay electrode electrically couples the pixel electrode and the transistor, and
the coupling member is provided in a contact hole through which the pixel relay electrode and the pixel electrode are electrically coupled.
8. The electro-optical device according to claim 1 , further comprising
a pixel electrode of the pixel potential, wherein
the semiconductor layer, the gate electrode, the insulating layer, the scanning line, and the pixel electrode are arranged in this order from the substrate.
9. The electro-optical device according to claim 1 , wherein
the light-blocking part includes a portion joined to the semiconductor layer and
the light-blocking part has a proximal light-blocking structure in which a distance to the semiconductor layer is small.
10. An electronic apparatus comprising:
the electro-optical device according to claim 1 ; and
a control unit configured to control an operation of the electro-optical device.
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