JP2021077859A5 - - Google Patents

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Publication number
JP2021077859A5
JP2021077859A5 JP2020134511A JP2020134511A JP2021077859A5 JP 2021077859 A5 JP2021077859 A5 JP 2021077859A5 JP 2020134511 A JP2020134511 A JP 2020134511A JP 2020134511 A JP2020134511 A JP 2020134511A JP 2021077859 A5 JP2021077859 A5 JP 2021077859A5
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Japan
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substrate
location
feature
plasma etching
reflectance
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JP2020134511A
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Japanese (ja)
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JP7328944B2 (ja
JP2021077859A (ja
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Priority claimed from GBGB1916079.5A external-priority patent/GB201916079D0/en
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JP2020134511A 2019-11-05 2020-08-07 リフレクトメトリ終了点イメージング装置及び方法 Active JP7328944B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1916079.5 2019-11-05
GBGB1916079.5A GB201916079D0 (en) 2019-11-05 2019-11-05 Apparatus and method

Publications (3)

Publication Number Publication Date
JP2021077859A JP2021077859A (ja) 2021-05-20
JP2021077859A5 true JP2021077859A5 (enExample) 2023-07-04
JP7328944B2 JP7328944B2 (ja) 2023-08-17

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JP2020134511A Active JP7328944B2 (ja) 2019-11-05 2020-08-07 リフレクトメトリ終了点イメージング装置及び方法

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US (1) US11710670B2 (enExample)
EP (1) EP3819927B1 (enExample)
JP (1) JP7328944B2 (enExample)
KR (1) KR20210054447A (enExample)
CN (1) CN112786423B (enExample)
GB (1) GB201916079D0 (enExample)
TW (1) TWI887272B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022144774A1 (en) * 2020-12-31 2022-07-07 3M Innovative Properties Company Metallic nanohole arrays on nanowells with controlled depth and methods of making the same
US11908716B2 (en) 2021-05-14 2024-02-20 Applied Materials, Inc. Image-based in-situ process monitoring
JP7645139B2 (ja) * 2021-06-22 2025-03-13 東京エレクトロン株式会社 検査方法及び検査システム
KR102740869B1 (ko) 2021-12-30 2024-12-09 세메스 주식회사 포토 마스크 보정 장치 및 방법
US12046522B2 (en) * 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

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Publication number Priority date Publication date Assignee Title
JPS59147433A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd エツチング装置
JPH066797B2 (ja) * 1985-03-11 1994-01-26 株式会社日立製作所 エツチングの終点検出方法
JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH03283615A (ja) * 1990-03-30 1991-12-13 Hitachi Electron Eng Co Ltd エッチング・モニタ方式
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JP4444428B2 (ja) 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
DE602004017983D1 (de) 2003-05-09 2009-01-08 Unaxis Usa Inc Endpunkt-Erkennung in einem zeitlich gemultiplexten Verfahren unter Verwendung eines Hüllkurvenalgorithmus
US20050020073A1 (en) 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4371999B2 (ja) 2004-12-28 2009-11-25 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
EP2309533A1 (en) * 2006-10-30 2011-04-13 Applied Materials, Inc. Endpoint detection for photomask etching
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
US8709268B2 (en) 2011-11-14 2014-04-29 Spts Technologies Limited Etching apparatus and methods
GB201119598D0 (en) 2011-11-14 2011-12-28 Spts Technologies Ltd Etching apparatus and methods
CN104736744B (zh) 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP2017168625A (ja) 2016-03-16 2017-09-21 住友電気工業株式会社 面発光半導体レーザを作製する方法
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US11022877B2 (en) 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
JP7265493B2 (ja) * 2017-07-17 2023-04-26 エーエスエムエル ネザーランズ ビー.ブイ. 情報を測定する装置及び方法

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