TWI887272B - 用於對一基板進行電漿蝕刻之設備及方法 - Google Patents

用於對一基板進行電漿蝕刻之設備及方法 Download PDF

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Publication number
TWI887272B
TWI887272B TW109134345A TW109134345A TWI887272B TW I887272 B TWI887272 B TW I887272B TW 109134345 A TW109134345 A TW 109134345A TW 109134345 A TW109134345 A TW 109134345A TW I887272 B TWI887272 B TW I887272B
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TW
Taiwan
Prior art keywords
substrate
feature
camera
plasma etching
etching process
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TW109134345A
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English (en)
Chinese (zh)
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TW202131374A (zh
Inventor
奧利薇 安塞爾
摩伊士 哈利 戈登
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英商Ｓｐｔｓ科技公司
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Publication of TW202131374A publication Critical patent/TW202131374A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW109134345A 2019-11-05 2020-10-05 用於對一基板進行電漿蝕刻之設備及方法 TWI887272B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1916079.5 2019-11-05
GBGB1916079.5A GB201916079D0 (en) 2019-11-05 2019-11-05 Apparatus and method

Publications (2)

Publication Number Publication Date
TW202131374A TW202131374A (zh) 2021-08-16
TWI887272B true TWI887272B (zh) 2025-06-21

Family

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Family Applications (1)

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TW109134345A TWI887272B (zh) 2019-11-05 2020-10-05 用於對一基板進行電漿蝕刻之設備及方法

Country Status (7)

Country Link
US (1) US11710670B2 (enExample)
EP (1) EP3819927B1 (enExample)
JP (1) JP7328944B2 (enExample)
KR (1) KR20210054447A (enExample)
CN (1) CN112786423B (enExample)
GB (1) GB201916079D0 (enExample)
TW (1) TWI887272B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022144774A1 (en) * 2020-12-31 2022-07-07 3M Innovative Properties Company Metallic nanohole arrays on nanowells with controlled depth and methods of making the same
US11908716B2 (en) 2021-05-14 2024-02-20 Applied Materials, Inc. Image-based in-situ process monitoring
JP7645139B2 (ja) * 2021-06-22 2025-03-13 東京エレクトロン株式会社 検査方法及び検査システム
KR102740869B1 (ko) 2021-12-30 2024-12-09 세메스 주식회사 포토 마스크 보정 장치 및 방법
US12046522B2 (en) * 2022-02-18 2024-07-23 Applied Materials, Inc. Endpoint detection in low open area and/or high aspect ratio etch applications

Citations (5)

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US4479848A (en) * 1983-02-14 1984-10-30 Hitachi, Ltd. Etching method and apparatus
US20180261481A1 (en) * 2017-03-10 2018-09-13 Toshiba Memory Corporation Sensing system, sensing wafer, and plasma processing apparatus
US20180259848A1 (en) * 2017-03-13 2018-09-13 Applied Materials, Inc. Etch processing system having reflective endpoint detection
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
TW201908715A (zh) * 2017-07-17 2019-03-01 荷蘭商Ａｓｍｌ荷蘭公司 資訊判定設備及方法

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JPH066797B2 (ja) * 1985-03-11 1994-01-26 株式会社日立製作所 エツチングの終点検出方法
JP2595083B2 (ja) * 1988-06-08 1997-03-26 株式会社日立製作所 配線形成方法及びその装置
JPH03283615A (ja) * 1990-03-30 1991-12-13 Hitachi Electron Eng Co Ltd エッチング・モニタ方式
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JP4444428B2 (ja) 2000-01-28 2010-03-31 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
DE602004017983D1 (de) 2003-05-09 2009-01-08 Unaxis Usa Inc Endpunkt-Erkennung in einem zeitlich gemultiplexten Verfahren unter Verwendung eines Hüllkurvenalgorithmus
US20050020073A1 (en) 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4371999B2 (ja) 2004-12-28 2009-11-25 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP2006186222A (ja) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
EP2309533A1 (en) * 2006-10-30 2011-04-13 Applied Materials, Inc. Endpoint detection for photomask etching
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
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GB201119598D0 (en) 2011-11-14 2011-12-28 Spts Technologies Ltd Etching apparatus and methods
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US4479848A (en) * 1983-02-14 1984-10-30 Hitachi, Ltd. Etching method and apparatus
US20180261481A1 (en) * 2017-03-10 2018-09-13 Toshiba Memory Corporation Sensing system, sensing wafer, and plasma processing apparatus
US20180259848A1 (en) * 2017-03-13 2018-09-13 Applied Materials, Inc. Etch processing system having reflective endpoint detection
US20180286643A1 (en) * 2017-03-29 2018-10-04 Tokyo Electron Limited Advanced optical sensor, system, and methodologies for etch processing monitoring
TW201908715A (zh) * 2017-07-17 2019-03-01 荷蘭商Ａｓｍｌ荷蘭公司 資訊判定設備及方法

Also Published As

Publication number Publication date
JP7328944B2 (ja) 2023-08-17
EP3819927B1 (en) 2022-06-15
US20210134684A1 (en) 2021-05-06
CN112786423A (zh) 2021-05-11
TW202131374A (zh) 2021-08-16
EP3819927A1 (en) 2021-05-12
GB201916079D0 (en) 2019-12-18
US11710670B2 (en) 2023-07-25
JP2021077859A (ja) 2021-05-20
KR20210054447A (ko) 2021-05-13
CN112786423B (zh) 2025-07-15

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