JP2021046610A5 - - Google Patents
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- JP2021046610A5 JP2021046610A5 JP2020167701A JP2020167701A JP2021046610A5 JP 2021046610 A5 JP2021046610 A5 JP 2021046610A5 JP 2020167701 A JP2020167701 A JP 2020167701A JP 2020167701 A JP2020167701 A JP 2020167701A JP 2021046610 A5 JP2021046610 A5 JP 2021046610A5
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- JP
- Japan
- Prior art keywords
- layer
- phases
- phase
- coating source
- target layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 40
- 239000000843 powder Substances 0.000 claims description 40
- 239000000203 mixture Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 230000000087 stabilizing effect Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000010936 titanium Substances 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 238000000280 densification Methods 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 150000003609 titanium compounds Chemical class 0.000 claims 2
- 239000012071 phase Substances 0.000 description 53
- 230000008569 process Effects 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000002490 spark plasma sintering Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- AUNXOLCRDMKODF-UHFFFAOYSA-N [Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ti+4].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ti+4].[Ti+4].[Ti+4].[Ti+4].[Ti+4] Chemical compound [Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ti+4].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Si]([O-])([O-])([O-])O[Si]([O-])([O-])[O-].[Ti+4].[Ti+4].[Ti+4].[Ti+4].[Ti+4] AUNXOLCRDMKODF-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000004482 other powder Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM17/2015U AT14497U1 (de) | 2015-01-26 | 2015-01-26 | Beschichtungsquelle |
| ATGM17/2015 | 2015-01-26 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538609A Division JP7087229B2 (ja) | 2015-01-26 | 2016-01-20 | コーティング源 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021046610A JP2021046610A (ja) | 2021-03-25 |
| JP2021046610A5 true JP2021046610A5 (enExample) | 2022-05-12 |
| JP7116131B2 JP7116131B2 (ja) | 2022-08-09 |
Family
ID=54782339
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538609A Active JP7087229B2 (ja) | 2015-01-26 | 2016-01-20 | コーティング源 |
| JP2020167701A Active JP7116131B2 (ja) | 2015-01-26 | 2020-10-02 | コーティング源 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538609A Active JP7087229B2 (ja) | 2015-01-26 | 2016-01-20 | コーティング源 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10787735B2 (enExample) |
| EP (1) | EP3251145B1 (enExample) |
| JP (2) | JP7087229B2 (enExample) |
| KR (1) | KR102526957B1 (enExample) |
| CN (1) | CN107208257B (enExample) |
| AT (1) | AT14497U1 (enExample) |
| RU (1) | RU2707375C2 (enExample) |
| TW (1) | TWI658885B (enExample) |
| WO (1) | WO2016120002A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607577B (zh) * | 2017-09-28 | 2020-04-10 | 中国煤炭地质总局水文地质局 | 一种地层换热能力的热物性测试装置 |
| CN112620633A (zh) * | 2020-12-02 | 2021-04-09 | 东莞仁海科技股份有限公司 | 一种粉末冶金件表面处理工艺 |
| RU2761060C1 (ru) * | 2020-12-23 | 2021-12-02 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кубанский государственный технологический университет" (ФГБОУ ВО "КубГТУ") | Устройство для формирования функциональных покрытий из порошкового материала на торцевой поверхности металлической детали двухсторонним прессованием |
| US20250242406A1 (en) * | 2024-01-25 | 2025-07-31 | Applied Materials, Inc. | Alloy microstructure formation for chamber components |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1731440A1 (ru) * | 1990-07-12 | 1992-05-07 | Киевский государственный педагогический институт им.А.М.Горького | Способ получени деталей из дисилицида титана |
| US5234487A (en) * | 1991-04-15 | 1993-08-10 | Tosoh Smd, Inc. | Method of producing tungsten-titanium sputter targets and targets produced thereby |
| US5282943A (en) | 1992-06-10 | 1994-02-01 | Tosoh Smd, Inc. | Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby |
| US5397050A (en) | 1993-10-27 | 1995-03-14 | Tosoh Smd, Inc. | Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby |
| US6073830A (en) | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
| US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
| US6183686B1 (en) | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
| US6071389A (en) * | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
| AT4240U1 (de) * | 2000-11-20 | 2001-04-25 | Plansee Ag | Verfahren zur herstellung einer verdampfungsquelle |
| KR20050030642A (ko) * | 2002-07-30 | 2005-03-30 | 가부시키가이샤 브리지스톤 | 스퍼터링 표적 |
| JP2005139539A (ja) | 2003-11-10 | 2005-06-02 | Toudai Tlo Ltd | マグネシウム化合物被膜を有する金属材料、スパッタリング用ターゲット部材、スパッタリング用ターゲット部材の製造方法およびマグネシウム化合物被膜の形成方法 |
| GB0327043D0 (en) * | 2003-11-18 | 2004-04-07 | Rolls Royce Plc | A method of manufacturing an article by applying heat and pressure, a method of connecting a pipe to a sealed assembly and a connector for use therein |
| US8206646B2 (en) * | 2006-12-22 | 2012-06-26 | Praxair Tecnology, Inc. | Method for consolidating and diffusion-bonding powder metallurgy sputtering target |
| CN101524754B (zh) * | 2009-04-17 | 2010-10-13 | 中南大学 | 一种钛铝合金靶材快速热压烧结成型工艺 |
| US9334562B2 (en) * | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| CN202193837U (zh) * | 2011-09-02 | 2012-04-18 | 余鹏 | 一种多弧离子镀用双层复合结构钛铝靶材 |
| AT14346U1 (de) | 2014-07-08 | 2015-09-15 | Plansee Se | Target und Verfahren zur Herstellung eines Targets |
| WO2016064350A1 (en) * | 2014-10-23 | 2016-04-28 | Agency For Science, Technology And Research | Method of bonding a first substrate and a second substrate |
-
2015
- 2015-01-26 AT ATGM17/2015U patent/AT14497U1/de not_active IP Right Cessation
- 2015-12-16 TW TW104142242A patent/TWI658885B/zh active
-
2016
- 2016-01-20 RU RU2017122209A patent/RU2707375C2/ru active
- 2016-01-20 WO PCT/EP2016/000092 patent/WO2016120002A1/de not_active Ceased
- 2016-01-20 KR KR1020177019201A patent/KR102526957B1/ko active Active
- 2016-01-20 JP JP2017538609A patent/JP7087229B2/ja active Active
- 2016-01-20 US US15/546,290 patent/US10787735B2/en active Active
- 2016-01-20 EP EP16703427.1A patent/EP3251145B1/de active Active
- 2016-01-20 CN CN201680007368.8A patent/CN107208257B/zh active Active
-
2020
- 2020-10-02 JP JP2020167701A patent/JP7116131B2/ja active Active
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