JP2021022688A5 - - Google Patents

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Publication number
JP2021022688A5
JP2021022688A5 JP2019139551A JP2019139551A JP2021022688A5 JP 2021022688 A5 JP2021022688 A5 JP 2021022688A5 JP 2019139551 A JP2019139551 A JP 2019139551A JP 2019139551 A JP2019139551 A JP 2019139551A JP 2021022688 A5 JP2021022688 A5 JP 2021022688A5
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JP
Japan
Prior art keywords
light
wavelength
active layer
region
emitting device
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JP2019139551A
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English (en)
Japanese (ja)
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JP2021022688A (ja
JP7414419B2 (ja
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Priority claimed from JP2019139551A external-priority patent/JP7414419B2/ja
Priority to JP2019139551A priority Critical patent/JP7414419B2/ja
Priority to CN202080054210.2A priority patent/CN114175281B/zh
Priority to EP20846408.1A priority patent/EP4006995A4/en
Priority to PCT/JP2020/028840 priority patent/WO2021020378A1/ja
Priority to KR1020227000428A priority patent/KR102647549B1/ko
Publication of JP2021022688A publication Critical patent/JP2021022688A/ja
Priority to US17/577,598 priority patent/US12002840B2/en
Publication of JP2021022688A5 publication Critical patent/JP2021022688A5/ja
Publication of JP7414419B2 publication Critical patent/JP7414419B2/ja
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JP2019139551A 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法 Active JP7414419B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019139551A JP7414419B2 (ja) 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法
KR1020227000428A KR102647549B1 (ko) 2019-07-30 2020-07-28 발광 소자 및 발광 소자의 제조방법
EP20846408.1A EP4006995A4 (en) 2019-07-30 2020-07-28 Light-emitting element, and method for manufacturing light-emitting element
PCT/JP2020/028840 WO2021020378A1 (ja) 2019-07-30 2020-07-28 発光素子及び発光素子の製造方法
CN202080054210.2A CN114175281B (zh) 2019-07-30 2020-07-28 发光元件和发光元件的制造方法
US17/577,598 US12002840B2 (en) 2019-07-30 2022-01-18 Light emitting element and manufacturing method of light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019139551A JP7414419B2 (ja) 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法

Publications (3)

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JP2021022688A JP2021022688A (ja) 2021-02-18
JP2021022688A5 true JP2021022688A5 (enExample) 2022-08-04
JP7414419B2 JP7414419B2 (ja) 2024-01-16

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Family Applications (1)

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JP2019139551A Active JP7414419B2 (ja) 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法

Country Status (6)

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US (1) US12002840B2 (enExample)
EP (1) EP4006995A4 (enExample)
JP (1) JP7414419B2 (enExample)
KR (1) KR102647549B1 (enExample)
CN (1) CN114175281B (enExample)
WO (1) WO2021020378A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7414419B2 (ja) 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
JP7472820B2 (ja) 2021-02-16 2024-04-23 株式会社Soken 物体検知装置
US12300770B2 (en) 2021-03-03 2025-05-13 Toyoda Gosei Co., Ltd. Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix
JP7563254B2 (ja) * 2021-03-11 2024-10-08 豊田合成株式会社 発光素子とその製造方法
KR20230120921A (ko) 2022-02-10 2023-08-17 삼성전자주식회사 반도체 발광 소자, 및 그 발광 소자를 포함한 발광 소자 어셈블리
US12278256B2 (en) 2022-12-15 2025-04-15 Samsung Electronics Co., Ltd. Display apparatus including LED with plurality of light emitting layers
WO2024170075A1 (en) * 2023-02-15 2024-08-22 Crocus Labs GmbH Monolithic multi-color led device
CN119521910A (zh) * 2023-08-15 2025-02-25 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310804A (ja) * 1993-04-20 1994-11-04 Sanyo Electric Co Ltd 面発光レーザ素子
JPH08288549A (ja) 1995-04-11 1996-11-01 Omron Corp 多波長発光半導体素子
US5898722A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
US8829546B2 (en) 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
JP3667188B2 (ja) * 2000-03-03 2005-07-06 キヤノン株式会社 電子線励起レーザー装置及びマルチ電子線励起レーザー装置
JP2002289965A (ja) * 2001-03-23 2002-10-04 Matsushita Electric Ind Co Ltd 半導体レーザ装置、及び光ピックアップ装置
JP4307113B2 (ja) 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP2006351966A (ja) 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4874768B2 (ja) 2006-11-14 2012-02-15 株式会社リコー 波長変換素子
JP2009070893A (ja) 2007-09-11 2009-04-02 Rohm Co Ltd 発光装置及びその製造方法
DE112008003200A5 (de) 2007-09-28 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
JP5437253B2 (ja) 2007-10-12 2014-03-12 エイジェンシー フォア サイエンス テクノロジー アンド リサーチ 蛍光体を含まない赤色及び白色窒化物ベースのledの作製
US7839913B2 (en) * 2007-11-22 2010-11-23 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
JP2009212308A (ja) 2008-03-04 2009-09-17 Sumitomo Electric Ind Ltd 発光ダイオード
DE102009020127A1 (de) 2009-03-25 2010-09-30 Osram Opto Semiconductors Gmbh Leuchtdiode
JP5590829B2 (ja) * 2009-07-03 2014-09-17 キヤノン株式会社 面発光レーザ、面発光レーザアレイ及び画像形成装置
JP5871458B2 (ja) * 2010-11-02 2016-03-01 キヤノン株式会社 垂直共振器型面発光レーザ、画像形成装置
JP6136284B2 (ja) * 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
FR3019380B1 (fr) 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102018111021A1 (de) 2017-12-14 2019-06-19 Osram Opto Semiconductors Gmbh Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils
JP2019139551A (ja) 2018-02-13 2019-08-22 沖電気工業株式会社 文字認識装置
JP7248441B2 (ja) 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
JP7414419B2 (ja) 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法

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