JP2021022688A5 - - Google Patents
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- Publication number
- JP2021022688A5 JP2021022688A5 JP2019139551A JP2019139551A JP2021022688A5 JP 2021022688 A5 JP2021022688 A5 JP 2021022688A5 JP 2019139551 A JP2019139551 A JP 2019139551A JP 2019139551 A JP2019139551 A JP 2019139551A JP 2021022688 A5 JP2021022688 A5 JP 2021022688A5
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength
- active layer
- region
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019139551A JP7414419B2 (ja) | 2019-07-30 | 2019-07-30 | 発光素子及び発光素子の製造方法 |
| KR1020227000428A KR102647549B1 (ko) | 2019-07-30 | 2020-07-28 | 발광 소자 및 발광 소자의 제조방법 |
| EP20846408.1A EP4006995A4 (en) | 2019-07-30 | 2020-07-28 | Light-emitting element, and method for manufacturing light-emitting element |
| PCT/JP2020/028840 WO2021020378A1 (ja) | 2019-07-30 | 2020-07-28 | 発光素子及び発光素子の製造方法 |
| CN202080054210.2A CN114175281B (zh) | 2019-07-30 | 2020-07-28 | 发光元件和发光元件的制造方法 |
| US17/577,598 US12002840B2 (en) | 2019-07-30 | 2022-01-18 | Light emitting element and manufacturing method of light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019139551A JP7414419B2 (ja) | 2019-07-30 | 2019-07-30 | 発光素子及び発光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021022688A JP2021022688A (ja) | 2021-02-18 |
| JP2021022688A5 true JP2021022688A5 (enExample) | 2022-08-04 |
| JP7414419B2 JP7414419B2 (ja) | 2024-01-16 |
Family
ID=74229091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019139551A Active JP7414419B2 (ja) | 2019-07-30 | 2019-07-30 | 発光素子及び発光素子の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12002840B2 (enExample) |
| EP (1) | EP4006995A4 (enExample) |
| JP (1) | JP7414419B2 (enExample) |
| KR (1) | KR102647549B1 (enExample) |
| CN (1) | CN114175281B (enExample) |
| WO (1) | WO2021020378A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7414419B2 (ja) | 2019-07-30 | 2024-01-16 | キヤノン株式会社 | 発光素子及び発光素子の製造方法 |
| JP7472820B2 (ja) | 2021-02-16 | 2024-04-23 | 株式会社Soken | 物体検知装置 |
| US12300770B2 (en) | 2021-03-03 | 2025-05-13 | Toyoda Gosei Co., Ltd. | Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix |
| JP7563254B2 (ja) * | 2021-03-11 | 2024-10-08 | 豊田合成株式会社 | 発光素子とその製造方法 |
| KR20230120921A (ko) | 2022-02-10 | 2023-08-17 | 삼성전자주식회사 | 반도체 발광 소자, 및 그 발광 소자를 포함한 발광 소자 어셈블리 |
| US12278256B2 (en) | 2022-12-15 | 2025-04-15 | Samsung Electronics Co., Ltd. | Display apparatus including LED with plurality of light emitting layers |
| WO2024170075A1 (en) * | 2023-02-15 | 2024-08-22 | Crocus Labs GmbH | Monolithic multi-color led device |
| CN119521910A (zh) * | 2023-08-15 | 2025-02-25 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310804A (ja) * | 1993-04-20 | 1994-11-04 | Sanyo Electric Co Ltd | 面発光レーザ素子 |
| JPH08288549A (ja) | 1995-04-11 | 1996-11-01 | Omron Corp | 多波長発光半導体素子 |
| US5898722A (en) * | 1997-03-10 | 1999-04-27 | Motorola, Inc. | Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication |
| JP3559446B2 (ja) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
| US8829546B2 (en) | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
| JP3667188B2 (ja) * | 2000-03-03 | 2005-07-06 | キヤノン株式会社 | 電子線励起レーザー装置及びマルチ電子線励起レーザー装置 |
| JP2002289965A (ja) * | 2001-03-23 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置、及び光ピックアップ装置 |
| JP4307113B2 (ja) | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| JP2006351966A (ja) | 2005-06-17 | 2006-12-28 | Sony Corp | 多波長半導体レーザ素子 |
| JP4874768B2 (ja) | 2006-11-14 | 2012-02-15 | 株式会社リコー | 波長変換素子 |
| JP2009070893A (ja) | 2007-09-11 | 2009-04-02 | Rohm Co Ltd | 発光装置及びその製造方法 |
| DE112008003200A5 (de) | 2007-09-28 | 2010-09-16 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper |
| JP5437253B2 (ja) | 2007-10-12 | 2014-03-12 | エイジェンシー フォア サイエンス テクノロジー アンド リサーチ | 蛍光体を含まない赤色及び白色窒化物ベースのledの作製 |
| US7839913B2 (en) * | 2007-11-22 | 2010-11-23 | Canon Kabushiki Kaisha | Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser |
| JP2009212308A (ja) | 2008-03-04 | 2009-09-17 | Sumitomo Electric Ind Ltd | 発光ダイオード |
| DE102009020127A1 (de) | 2009-03-25 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
| JP5590829B2 (ja) * | 2009-07-03 | 2014-09-17 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ及び画像形成装置 |
| JP5871458B2 (ja) * | 2010-11-02 | 2016-03-01 | キヤノン株式会社 | 垂直共振器型面発光レーザ、画像形成装置 |
| JP6136284B2 (ja) * | 2012-03-13 | 2017-05-31 | 株式会社リコー | 半導体積層体及び面発光レーザ素子 |
| FR3019380B1 (fr) | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
| US9508891B2 (en) | 2014-11-21 | 2016-11-29 | Epistar Corporation | Method for making light-emitting device |
| DE102018111021A1 (de) | 2017-12-14 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils |
| JP2019139551A (ja) | 2018-02-13 | 2019-08-22 | 沖電気工業株式会社 | 文字認識装置 |
| JP7248441B2 (ja) | 2018-03-02 | 2023-03-29 | シャープ株式会社 | 画像表示素子 |
| JP7414419B2 (ja) | 2019-07-30 | 2024-01-16 | キヤノン株式会社 | 発光素子及び発光素子の製造方法 |
-
2019
- 2019-07-30 JP JP2019139551A patent/JP7414419B2/ja active Active
-
2020
- 2020-07-28 WO PCT/JP2020/028840 patent/WO2021020378A1/ja not_active Ceased
- 2020-07-28 CN CN202080054210.2A patent/CN114175281B/zh active Active
- 2020-07-28 EP EP20846408.1A patent/EP4006995A4/en active Pending
- 2020-07-28 KR KR1020227000428A patent/KR102647549B1/ko active Active
-
2022
- 2022-01-18 US US17/577,598 patent/US12002840B2/en active Active
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