JP7414419B2 - 発光素子及び発光素子の製造方法 - Google Patents

発光素子及び発光素子の製造方法 Download PDF

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JP7414419B2
JP7414419B2 JP2019139551A JP2019139551A JP7414419B2 JP 7414419 B2 JP7414419 B2 JP 7414419B2 JP 2019139551 A JP2019139551 A JP 2019139551A JP 2019139551 A JP2019139551 A JP 2019139551A JP 7414419 B2 JP7414419 B2 JP 7414419B2
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light
wavelength
active layer
region
light emitting
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JP2021022688A (ja
JP2021022688A5 (enExample
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貴子 須賀
武志 内田
毅 吉岡
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Canon Inc
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Canon Inc
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Priority to JP2019139551A priority Critical patent/JP7414419B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN202080054210.2A priority patent/CN114175281B/zh
Priority to KR1020227000428A priority patent/KR102647549B1/ko
Priority to EP20846408.1A priority patent/EP4006995A4/en
Priority to PCT/JP2020/028840 priority patent/WO2021020378A1/ja
Publication of JP2021022688A publication Critical patent/JP2021022688A/ja
Priority to US17/577,598 priority patent/US12002840B2/en
Publication of JP2021022688A5 publication Critical patent/JP2021022688A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2019139551A 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法 Active JP7414419B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019139551A JP7414419B2 (ja) 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法
KR1020227000428A KR102647549B1 (ko) 2019-07-30 2020-07-28 발광 소자 및 발광 소자의 제조방법
EP20846408.1A EP4006995A4 (en) 2019-07-30 2020-07-28 Light-emitting element, and method for manufacturing light-emitting element
PCT/JP2020/028840 WO2021020378A1 (ja) 2019-07-30 2020-07-28 発光素子及び発光素子の製造方法
CN202080054210.2A CN114175281B (zh) 2019-07-30 2020-07-28 发光元件和发光元件的制造方法
US17/577,598 US12002840B2 (en) 2019-07-30 2022-01-18 Light emitting element and manufacturing method of light emitting element

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JP2019139551A JP7414419B2 (ja) 2019-07-30 2019-07-30 発光素子及び発光素子の製造方法

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JP2021022688A5 JP2021022688A5 (enExample) 2022-08-04
JP7414419B2 true JP7414419B2 (ja) 2024-01-16

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EP (1) EP4006995A4 (enExample)
JP (1) JP7414419B2 (enExample)
KR (1) KR102647549B1 (enExample)
CN (1) CN114175281B (enExample)
WO (1) WO2021020378A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7414419B2 (ja) 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
JP7472820B2 (ja) 2021-02-16 2024-04-23 株式会社Soken 物体検知装置
US12300770B2 (en) 2021-03-03 2025-05-13 Toyoda Gosei Co., Ltd. Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix
JP7563254B2 (ja) * 2021-03-11 2024-10-08 豊田合成株式会社 発光素子とその製造方法
KR20230120921A (ko) 2022-02-10 2023-08-17 삼성전자주식회사 반도체 발광 소자, 및 그 발광 소자를 포함한 발광 소자 어셈블리
US12278256B2 (en) 2022-12-15 2025-04-15 Samsung Electronics Co., Ltd. Display apparatus including LED with plurality of light emitting layers
WO2024170075A1 (en) * 2023-02-15 2024-08-22 Crocus Labs GmbH Monolithic multi-color led device
CN119521910A (zh) * 2023-08-15 2025-02-25 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

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JP2003347585A (ja) 2002-03-19 2003-12-05 Nobuhiko Sawaki 半導体発光素子およびその製造方法
JP2009527125A (ja) 2006-02-13 2009-07-23 クリー インコーポレイテッド 光変換のための希土類ドープされた層または基板
JP2009212308A (ja) 2008-03-04 2009-09-17 Sumitomo Electric Ind Ltd 発光ダイオード
JP2010541217A (ja) 2007-09-28 2010-12-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射放出用の半導体ボディ
JP2011501408A (ja) 2007-10-12 2011-01-06 エイジェンシー フォア サイエンス テクノロジー アンド リサーチ 蛍光体を含まない赤色及び白色窒化物ベースのｌｅｄの作製
JP2012521644A (ja) 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2017513225A (ja) 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
US20190158352A1 (en) 2014-11-21 2019-05-23 Epistar Corporation Light-emitting device
JP2019153783A (ja) 2018-03-02 2019-09-12 シャープ株式会社 画像表示素子

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Publication number Priority date Publication date Assignee Title
JP2003347585A (ja) 2002-03-19 2003-12-05 Nobuhiko Sawaki 半導体発光素子およびその製造方法
JP2009527125A (ja) 2006-02-13 2009-07-23 クリー インコーポレイテッド 光変換のための希土類ドープされた層または基板
JP2010541217A (ja) 2007-09-28 2010-12-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射放出用の半導体ボディ
JP2011501408A (ja) 2007-10-12 2011-01-06 エイジェンシー フォア サイエンス テクノロジー アンド リサーチ 蛍光体を含まない赤色及び白色窒化物ベースのｌｅｄの作製
JP2009212308A (ja) 2008-03-04 2009-09-17 Sumitomo Electric Ind Ltd 発光ダイオード
JP2012521644A (ja) 2009-03-25 2012-09-13 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光ダイオード
JP2017513225A (ja) 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
US20190158352A1 (en) 2014-11-21 2019-05-23 Epistar Corporation Light-emitting device
JP2019153783A (ja) 2018-03-02 2019-09-12 シャープ株式会社 画像表示素子

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Publication number Publication date
JP2021022688A (ja) 2021-02-18
WO2021020378A1 (ja) 2021-02-04
US12002840B2 (en) 2024-06-04
EP4006995A1 (en) 2022-06-01
EP4006995A4 (en) 2023-08-30
CN114175281B (zh) 2024-12-31
US20220139997A1 (en) 2022-05-05
KR20220018017A (ko) 2022-02-14
KR102647549B1 (ko) 2024-03-14
CN114175281A (zh) 2022-03-11

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