JP2021019178A - 熱処理装置及び処理方法 - Google Patents
熱処理装置及び処理方法 Download PDFInfo
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Abstract
Description
[基板処理システム]
図1〜図6を参照して第1実施形態に係る基板処理システムを説明する。基板処理システム1は、基板に対し、感光性被膜の形成、当該感光性被膜の露光、及び当該感光性被膜の現像を施すシステムである。処理対象の基板は、例えば半導体のウエハWである。感光性被膜は、例えばレジスト膜である。基板処理システム1は、塗布・現像装置2と露光装置3とを備える。露光装置3は、ウエハW(基板)上に形成されたレジスト膜(感光性被膜)を露光する装置である。具体的には、露光装置3は、液浸露光等の方法によりレジスト膜の露光対象部分にエネルギー線を照射する。塗布・現像装置2は、露光装置3による露光処理の前に、ウエハW(基板)の表面にレジスト(薬液)を塗布してレジスト膜を形成する処理を行い、露光処理後にレジスト膜の現像処理を行う。以下の例示的実施形態では、基板処理システム1は、金属を含有するレジスト(以下、「メタル含有レジスト」という。)を用いて、メタル含有レジストの被膜を形成する場合について説明する。例えば、基板処理システム1は、スズ(Sn)を含有するレジストを用いて上記被膜を形成してもよい。ただし、レジストの種類は上記に限定されない。
以下、基板処理装置の一例として、塗布・現像装置2の構成を説明する。図1及び図2に示されるように、塗布・現像装置2は、キャリアブロック4と、処理ブロック5と、インタフェースブロック6と、制御装置100とを備える。
続いて、処理モジュール14の熱処理ユニットU8の一例について、図4及び図5を参照して詳細に説明する。図4に示されるように、熱処理ユニットU8は、加熱機構20と、ウエハ昇降機構30(昇降部)と、収容機構40と、ガス供給機構60(ガス供給部)と、排気機構70(排気部)と、を備える。なお、図4では、一部の要素を除き断面であることを示すハッチングが省略されている。
図1に示されるように、制御装置100は、機能上の構成として、記憶部101と制御部102とを備える。記憶部101は、熱処理ユニットU8を含む塗布・現像装置2の各部を動作させるためのプログラムを記憶している。記憶部101は、各種のデータ(例えば、熱処理ユニットU8を動作させるための指示信号に係る情報)や、各部に設けられたセンサ等からの情報をも記憶している。記憶部101は、例えば半導体メモリ、光記録ディスク、磁気記録ディスク、光磁気記録ディスクである。当該プログラムは、記憶部101とは別体の外部記憶装置や、伝播信号などの無形の媒体にも含まれ得る。これらの他の媒体から記憶部101に当該プログラムをインストールして、記憶部101に当該プログラムを記憶させてもよい。制御部102、記憶部101から読み出したプログラムに基づいて、塗布・現像装置2の各部の動作を制御する。
図4に戻り、熱処理ユニットU8における熱処理時の動作について説明する。熱処理時には、制御装置100の制御部102は、まずチャンバ駆動部45を駆動することにより上チャンバ43を上昇させる。これにより、チャンバ41内の空間は、チャンバ41の外側の空間と接続される。次に、制御装置100の制御部102は、ウエハWをチャンバ41内に搬入するように搬送装置A3及びウエハ昇降機構30を制御する。例えば、ウエハ昇降制御部112が昇降駆動部32を駆動して支持ピン31を上昇させた状態で、制御装置100は支持ピン31上にウエハWを配置するように搬送装置A3を制御する。
以上のように、上記の熱処理装置(熱処理ユニットU8)及び熱処理方法によれば、ガス吐出部50から処理用ガスがウエハWの表面に設けて吐出されることにより、ウエハWの熱処理が促進される。一方、熱処理ユニットU8では、気体流路81と、排気孔71からチャンバ内を排気する排気機構70と、によって、これらの間を流れる気体によって基板の周囲に上昇流が形成される。このため、熱処理時にウエハWから発生した昇華物の移動が上昇流によって遮られる。したがって、基板上の被膜からの昇華物の飛散を抑制することが可能となる。
次に、第2実施形態に係る熱処理装置(熱処理ユニットU8A)について説明する。図9は、第2実施形態に係る熱処理ユニットU8Aの一例を示す図である。図9に示されるように、熱処理ユニットU8Aは、加熱機構20と、ウエハ昇降機構30(昇降部)と、収容機構40と、ガス供給機構60(ガス供給部)と、排気機構70(排気部)と、を備える。この点は、第1実施形態に係る熱処理ユニットU8と同様である。また、気体流路81,82の構成についても熱処理ユニットU8と同様である。熱処理ユニットU8Aが熱処理ユニットU8と異なる点は、排気機構70の配置である。
以上、種々の例示的実施形態について説明してきたが、上述した例示的実施形態に限定されることなく、様々な省略、置換、及び変更がなされてもよい。また、異なる実施形態における要素を組み合わせて他の実施形態を形成することが可能である。
Claims (10)
- レジストの被膜が形成され、当該被膜に露光処理が施された基板を熱処理する熱処理装置であって、
前記基板を支持して加熱する熱板と、
前記熱板上の処理空間を覆うチャンバと、
前記チャンバ内において、処理用ガスを前記熱板上の前記基板に向けて上方から吐出するガス吐出部と、
前記チャンバ内において、前記基板の表面よりも下方から前記チャンバ内に気体を供給する気体供給部と、
前記処理空間の上方に設けられた下方に開口する排気孔から前記チャンバ内を排気する排気部と、
を有する、熱処理装置。 - 前記被膜は、メタル含有レジストによる被膜である、請求項1に記載の熱処理装置。
- 前記排気孔は、前記ガス吐出部の周縁よりも内側に設けられる、請求項1または2に記載の熱処理装置。
- 前記排気孔の少なくとも一部は前記基板よりも外周に設けられる、請求項1または2に記載の熱処理装置。
- 前記気体供給部は、前記基板よりも外周から前記チャンバ内に気体を供給する、請求項1〜4のいずれか一項に記載の熱処理装置。
- 前記気体供給部は、
前記チャンバ内と接続された気体流路と、
前記気体流路の前記チャンバ側の端部において、流路面積を制御する整流部と、
を含む、請求項1〜5のいずれか一項に記載の熱処理装置。 - 前記チャンバ内には、前記整流部よりも上方且つ前記排気部よりも前記基板の径方向外側に、外側空間を有し、
前記外側空間に接続されて前記チャンバ内に気体を供給する前記気体供給部とは異なる第2気体供給部を有し、
前記第2気体供給部は、前記整流部側において前記外側空間に対して接続される、請求項6に記載の熱処理装置。 - 前記気体供給部は、
前記チャンバ内と接続された気体流路を有し、
前記気体流路は、前記熱板からの熱を伝熱可能とされている、請求項1〜7のいずれか一項に記載の熱処理装置。 - 前記ガス吐出部は、前記熱板上の前記基板に対向する面に沿って点在する複数の吐出孔を含む、請求項1〜8のいずれか一項に記載の熱処理装置。
- レジストの被膜が形成され、当該被膜に露光処理が施された基板について、熱板において支持して加熱することで熱処理する熱処理方法であって、
チャンバ内において、前記基板の表面よりも下方から前記チャンバ内に気体を供給し、前記チャンバ内の処理空間の上方に設けられた下方に開口する排気孔から前記チャンバ内を排気することで、前記基板の周囲に上昇流を形成しながら前記熱処理を行う、熱処理方法。
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CN114669553A (zh) * | 2022-03-18 | 2022-06-28 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 气浴装置及气浴装置的设计方法 |
WO2022219977A1 (ja) * | 2021-04-14 | 2022-10-20 | 東京エレクトロン株式会社 | 基板処理方法 |
KR20240048484A (ko) | 2022-10-06 | 2024-04-15 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 기판 처리 장치 및 컴퓨터 기억 매체 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004235469A (ja) * | 2003-01-30 | 2004-08-19 | Tokyo Electron Ltd | 熱的処理方法および熱的処理装置 |
JP2005064277A (ja) * | 2003-08-13 | 2005-03-10 | Dainippon Screen Mfg Co Ltd | 基板加熱装置および基板加熱方法 |
JP2007201037A (ja) * | 2006-01-25 | 2007-08-09 | Tokyo Electron Ltd | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
JP2008066645A (ja) * | 2006-09-11 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2016039369A (ja) * | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 基板加熱装置、基板加熱方法、記憶媒体 |
JP2018098229A (ja) * | 2016-12-08 | 2018-06-21 | 東京エレクトロン株式会社 | 基板処理方法及び熱処理装置 |
JP2019057672A (ja) * | 2017-09-22 | 2019-04-11 | 東京エレクトロン株式会社 | 加熱処理装置及び加熱処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
CN112289701A (zh) * | 2019-07-22 | 2021-01-29 | 东京毅力科创株式会社 | 热处理装置和热处理方法 |
-
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004235469A (ja) * | 2003-01-30 | 2004-08-19 | Tokyo Electron Ltd | 熱的処理方法および熱的処理装置 |
JP2005064277A (ja) * | 2003-08-13 | 2005-03-10 | Dainippon Screen Mfg Co Ltd | 基板加熱装置および基板加熱方法 |
JP2007201037A (ja) * | 2006-01-25 | 2007-08-09 | Tokyo Electron Ltd | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
JP2008066645A (ja) * | 2006-09-11 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2016039369A (ja) * | 2014-08-08 | 2016-03-22 | 東京エレクトロン株式会社 | 基板加熱装置、基板加熱方法、記憶媒体 |
JP2018098229A (ja) * | 2016-12-08 | 2018-06-21 | 東京エレクトロン株式会社 | 基板処理方法及び熱処理装置 |
JP2019057672A (ja) * | 2017-09-22 | 2019-04-11 | 東京エレクトロン株式会社 | 加熱処理装置及び加熱処理方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022219977A1 (ja) * | 2021-04-14 | 2022-10-20 | 東京エレクトロン株式会社 | 基板処理方法 |
CN114669553A (zh) * | 2022-03-18 | 2022-06-28 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 气浴装置及气浴装置的设计方法 |
CN114669553B (zh) * | 2022-03-18 | 2023-07-04 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 气浴装置及气浴装置的设计方法 |
KR20240048484A (ko) | 2022-10-06 | 2024-04-15 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 기판 처리 장치 및 컴퓨터 기억 매체 |
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