JP2020529729A - ナノポーラスマイクロｌｅｄデバイスおよび製造方法 - Google Patents

ナノポーラスマイクロｌｅｄデバイスおよび製造方法 Download PDF

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JP2020529729A
JP2020529729A JP2020505177A JP2020505177A JP2020529729A JP 2020529729 A JP2020529729 A JP 2020529729A JP 2020505177 A JP2020505177 A JP 2020505177A JP 2020505177 A JP2020505177 A JP 2020505177A JP 2020529729 A JP2020529729 A JP 2020529729A
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layer
led device
diode
diodes
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JP2020529729A5 (https=
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ジョン ハン
ジョン ハン
チア−フェン リン
チア−フェン リン
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Yale University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H—ELECTRICITY
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2020505177A 2017-07-31 2018-07-27 ナノポーラスマイクロｌｅｄデバイスおよび製造方法 Pending JP2020529729A (ja)

Applications Claiming Priority (3)

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US201762538994P 2017-07-31 2017-07-31
US62/538,994 2017-07-31
PCT/US2018/044023 WO2019027820A1 (en) 2017-07-31 2018-07-27 MICRO-LED NANOPOROUS DEVICES AND METHODS OF MAKING SAME

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JP2020529729A true JP2020529729A (ja) 2020-10-08
JP2020529729A5 JP2020529729A5 (https=) 2022-11-16

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US (1) US20200152841A1 (https=)
EP (1) EP3662518A4 (https=)
JP (1) JP2020529729A (https=)
CN (1) CN111052418A (https=)
WO (1) WO2019027820A1 (https=)

Cited By (8)

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JP2022527622A (ja) * 2020-03-03 2022-06-02 東莞市中麒光電技術有限公司 発光ダイオード及びその製造方法
KR20220139242A (ko) * 2021-04-07 2022-10-14 삼성전자주식회사 칼라 변환 구조물, 디스플레이 장치 및 디스플레이 장치 제조 방법
JP2022550015A (ja) * 2019-09-27 2022-11-30 ニュー シリコン コーポレーション プライベート リミテッド 半導体デバイスを製造する方法およびその半導体デバイス
KR20230082436A (ko) * 2021-12-01 2023-06-08 삼성전자주식회사 마이크로 발광 반도체 소자, 이를 포함한 디스플레이 장치 및 그 제조 방법
KR20230092393A (ko) * 2021-12-17 2023-06-26 삼성전자주식회사 색 변환 필름, 디스플레이 장치 및 색 변환 필름 제조 방법
US12170344B2 (en) 2021-04-30 2024-12-17 Samsung Display Co., Ltd. Display device including partitioning wall comprising transparent conductive oxide and method for manufacturing the same
US12272768B2 (en) 2021-04-30 2025-04-08 Samsung Display Co., Ltd. Display device and method for fabricating the same
US12402464B2 (en) 2021-04-30 2025-08-26 Samsung Display Co., Ltd. Display device and method of manufacturing the same

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* Cited by examiner, † Cited by third party
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CN110212064B (zh) * 2018-02-28 2020-10-09 华为技术有限公司 一种发光二极管芯片及其制备方法
US11870015B2 (en) 2019-03-11 2024-01-09 Saphlux, Inc. Light conversion devices incorporating quantum dots
US11757072B2 (en) * 2019-03-11 2023-09-12 Saphlux, Inc. Semiconductor devices incorporating quantum dots
CN110058412B (zh) * 2019-04-23 2020-02-18 深圳惠牛科技有限公司 一种传输解耦的大视场光波导镜片
US11094530B2 (en) 2019-05-14 2021-08-17 Applied Materials, Inc. In-situ curing of color conversion layer
US11239213B2 (en) 2019-05-17 2022-02-01 Applied Materials, Inc. In-situ curing of color conversion layer in recess
CN110992841A (zh) * 2019-11-06 2020-04-10 深圳市华星光电半导体显示技术有限公司 显示装置及显示装置的制作方法
FR3105567B1 (fr) * 2019-12-19 2021-12-17 Commissariat Energie Atomique Procede pour fabriquer une structure gan/ingan relaxee
KR102937515B1 (ko) * 2020-01-21 2026-03-11 사플럭스, 아이엔씨. 양자점들을 포함하는 반도체 소자들
KR20220140749A (ko) 2020-01-22 2022-10-18 포로 테크놀로지스 리미티드 적색 led 및 제작 방법
CN111505866B (zh) * 2020-04-21 2022-04-12 京东方科技集团股份有限公司 显示装置及其制作方法
CN111668249A (zh) * 2020-06-02 2020-09-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
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TW202211498A (zh) * 2020-08-04 2022-03-16 英商普羅科技有限公司 Led裝置及製造方法
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US11646397B2 (en) 2020-08-28 2023-05-09 Applied Materials, Inc. Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs
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US20220288878A1 (en) 2021-03-12 2022-09-15 Applied Materials, Inc. Print Process For Color Conversion Layer Using Mask
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TWI804952B (zh) 2021-08-17 2023-06-11 友達光電股份有限公司 電致發光元件及應用其的顯示裝置
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KR20240030349A (ko) * 2022-08-30 2024-03-07 삼성전자주식회사 다중 파장 발광 소자 및 그 제조 방법
KR20240044983A (ko) * 2022-09-29 2024-04-05 삼성전자주식회사 발광 소자, 이를 포함하는 디스플레이 장치 및 그 제조 방법
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010525555A (ja) * 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
WO2010123809A2 (en) * 2009-04-20 2010-10-28 3M Innovative Properties Company Non-radiatively pumped wavelength converter
JP2013501357A (ja) * 2009-07-30 2013-01-10 スリーエム イノベイティブ プロパティズ カンパニー ピクセル化されたｌｅｄ
WO2013109908A1 (en) * 2012-01-18 2013-07-25 The Penn State Research Foundation Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes
US20150053916A1 (en) * 2013-08-22 2015-02-26 Nanoco Technologies Ltd. Gas Phase Enhancement of Emission Color Quality in Solid State LEDs
US20150171269A1 (en) * 2013-12-16 2015-06-18 Samsung Display Co. Ltd. Light emitting diode and method of manufacturing the same
JP6131374B1 (ja) * 2016-07-18 2017-05-17 ルーメンス カンパニー リミテッド マイクロｌｅｄアレイディスプレイ装置
JP2017526180A (ja) * 2014-09-01 2017-09-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップを製造するための方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4193471B2 (ja) * 2001-12-14 2008-12-10 日亜化学工業株式会社 発光装置およびその製造方法
US20120161185A1 (en) * 2009-06-19 2012-06-28 Tao Wang Light emitting diodes
US8557616B2 (en) * 2009-12-09 2013-10-15 Nano And Advanced Materials Institute Limited Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display
KR101726807B1 (ko) * 2010-11-01 2017-04-14 삼성전자주식회사 반도체 발광소자
DE102010051286A1 (de) * 2010-11-12 2012-05-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR20120057298A (ko) * 2010-11-26 2012-06-05 서울옵토디바이스주식회사 발광 소자 및 그 제조 방법
CN103412435B (zh) * 2013-07-24 2015-11-25 北京京东方光电科技有限公司 一种液晶显示屏及显示装置
US9048387B2 (en) * 2013-08-09 2015-06-02 Qingdao Jason Electric Co., Ltd. Light-emitting device with improved light extraction efficiency
CN104868023B (zh) * 2015-05-11 2018-02-16 南京大学 Iii族氮化物半导体/量子点混合白光led器件及其制备方法
KR102650341B1 (ko) * 2016-11-25 2024-03-22 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US10629577B2 (en) * 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010525555A (ja) * 2007-03-08 2010-07-22 スリーエム イノベイティブ プロパティズ カンパニー 発光素子のアレイ
WO2010123809A2 (en) * 2009-04-20 2010-10-28 3M Innovative Properties Company Non-radiatively pumped wavelength converter
JP2013501357A (ja) * 2009-07-30 2013-01-10 スリーエム イノベイティブ プロパティズ カンパニー ピクセル化されたｌｅｄ
WO2013109908A1 (en) * 2012-01-18 2013-07-25 The Penn State Research Foundation Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes
US20150053916A1 (en) * 2013-08-22 2015-02-26 Nanoco Technologies Ltd. Gas Phase Enhancement of Emission Color Quality in Solid State LEDs
US20150171269A1 (en) * 2013-12-16 2015-06-18 Samsung Display Co. Ltd. Light emitting diode and method of manufacturing the same
JP2017526180A (ja) * 2014-09-01 2017-09-07 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップを製造するための方法
JP6131374B1 (ja) * 2016-07-18 2017-05-17 ルーメンス カンパニー リミテッド マイクロｌｅｄアレイディスプレイ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CUONG DANG, ET AL.: "A Wafer-Level Integrated White-Light Emitting Diode Incorporating Colloidal Quantum Dots as a Nanoco", ADVANCED MATERIALS, vol. Vol.24 Issue 44, JPN6022017647, 24 August 2012 (2012-08-24), pages 5915 - 5918, ISSN: 0004998494 *

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US12389718B2 (en) 2019-09-27 2025-08-12 New Silicon Corporation Pte Ltd Method for fabricating a semiconductor device including integrating III-V device and CMOS device, and the semiconductor device thereof
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