CN111052418A - 纳米多孔微led器件及其制造方法 - Google Patents

纳米多孔微led器件及其制造方法 Download PDF

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CN111052418A
CN111052418A CN201880056804.XA CN201880056804A CN111052418A CN 111052418 A CN111052418 A CN 111052418A CN 201880056804 A CN201880056804 A CN 201880056804A CN 111052418 A CN111052418 A CN 111052418A
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gan
layer
diodes
led device
gan layer
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J·韩
C-F·林
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Yale University
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Yale University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
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    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201880056804.XA 2017-07-31 2018-07-27 纳米多孔微led器件及其制造方法 Pending CN111052418A (zh)

Applications Claiming Priority (3)

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US201762538994P 2017-07-31 2017-07-31
US62/538,994 2017-07-31
PCT/US2018/044023 WO2019027820A1 (en) 2017-07-31 2018-07-27 MICRO-LED NANOPOROUS DEVICES AND METHODS OF MAKING SAME

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US (1) US20200152841A1 (https=)
EP (1) EP3662518A4 (https=)
JP (1) JP2020529729A (https=)
CN (1) CN111052418A (https=)
WO (1) WO2019027820A1 (https=)

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CN111505866A (zh) * 2020-04-21 2020-08-07 京东方科技集团股份有限公司 显示装置及其制作方法
CN111668249A (zh) * 2020-06-02 2020-09-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN115064632A (zh) * 2022-05-19 2022-09-16 西安赛富乐斯半导体科技有限公司 一种基于量子点显色技术的Micro LED芯片及其制造方法
CN115207188A (zh) * 2021-04-07 2022-10-18 三星电子株式会社 颜色转换结构、显示装置以及制造该显示装置的方法
WO2022243297A1 (de) * 2021-05-19 2022-11-24 Osram Opto Semiconductors Gmbh Halbleiterlaser und optoelektronisches halbleiterkonverterelement
CN117038695A (zh) * 2023-08-07 2023-11-10 星钥(珠海)半导体有限公司 一种遂穿结联rgb微型发光二极管及其制作方法
US12328981B2 (en) 2021-08-17 2025-06-10 AUO Corporation Electroluminescent device and display apparatus applying the same

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US11870015B2 (en) 2019-03-11 2024-01-09 Saphlux, Inc. Light conversion devices incorporating quantum dots
US11757072B2 (en) * 2019-03-11 2023-09-12 Saphlux, Inc. Semiconductor devices incorporating quantum dots
CN110058412B (zh) * 2019-04-23 2020-02-18 深圳惠牛科技有限公司 一种传输解耦的大视场光波导镜片
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US11239213B2 (en) 2019-05-17 2022-02-01 Applied Materials, Inc. In-situ curing of color conversion layer in recess
KR20220067539A (ko) * 2019-09-27 2022-05-24 뉴 실리콘 코포레이션 피티이 엘티디 반도체 소자의 제조방법 및 이의 반도체 소자
CN110992841A (zh) * 2019-11-06 2020-04-10 深圳市华星光电半导体显示技术有限公司 显示装置及显示装置的制作方法
FR3105567B1 (fr) * 2019-12-19 2021-12-17 Commissariat Energie Atomique Procede pour fabriquer une structure gan/ingan relaxee
KR102937515B1 (ko) * 2020-01-21 2026-03-11 사플럭스, 아이엔씨. 양자점들을 포함하는 반도체 소자들
KR20220140749A (ko) 2020-01-22 2022-10-18 포로 테크놀로지스 리미티드 적색 led 및 제작 방법
JP7296481B2 (ja) 2020-03-03 2023-06-22 東莞市中麒光電技術有限公司 発光ダイオード及びその製造方法
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KR20220149877A (ko) 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20220149829A (ko) 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법
KR102903682B1 (ko) * 2021-05-14 2025-12-24 삼성디스플레이 주식회사 표시 장치
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KR102885873B1 (ko) * 2021-12-17 2025-11-12 삼성전자주식회사 색 변환 필름, 디스플레이 장치 및 색 변환 필름 제조 방법
CN114606499B (zh) * 2022-04-07 2023-06-06 燕山大学 一种表面具有微孔结构的金属及其制备方法与应用
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KR20240030349A (ko) * 2022-08-30 2024-03-07 삼성전자주식회사 다중 파장 발광 소자 및 그 제조 방법
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KR20250047000A (ko) * 2023-09-27 2025-04-03 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법, 및 나노 막대 발광 소자를 포함하는 디스플레이 장치

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