JP2020529729A5 - - Google Patents

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Publication number
JP2020529729A5
JP2020529729A5 JP2020505177A JP2020505177A JP2020529729A5 JP 2020529729 A5 JP2020529729 A5 JP 2020529729A5 JP 2020505177 A JP2020505177 A JP 2020505177A JP 2020505177 A JP2020505177 A JP 2020505177A JP 2020529729 A5 JP2020529729 A5 JP 2020529729A5
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JP
Japan
Prior art keywords
gan
contact
gan layer
optimal
layer doped
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020505177A
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English (en)
Japanese (ja)
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JP2020529729A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2018/044023 external-priority patent/WO2019027820A1/en
Publication of JP2020529729A publication Critical patent/JP2020529729A/ja
Publication of JP2020529729A5 publication Critical patent/JP2020529729A5/ja
Pending legal-status Critical Current

Links

JP2020505177A 2017-07-31 2018-07-27 ナノポーラスマイクロｌｅｄデバイスおよび製造方法 Pending JP2020529729A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762538994P 2017-07-31 2017-07-31
US62/538,994 2017-07-31
PCT/US2018/044023 WO2019027820A1 (en) 2017-07-31 2018-07-27 MICRO-LED NANOPOROUS DEVICES AND METHODS OF MAKING SAME

Publications (2)

Publication Number Publication Date
JP2020529729A JP2020529729A (ja) 2020-10-08
JP2020529729A5 true JP2020529729A5 (https=) 2022-11-16

Family

ID=65234177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020505177A Pending JP2020529729A (ja) 2017-07-31 2018-07-27 ナノポーラスマイクロｌｅｄデバイスおよび製造方法

Country Status (5)

Country Link
US (1) US20200152841A1 (https=)
EP (1) EP3662518A4 (https=)
JP (1) JP2020529729A (https=)
CN (1) CN111052418A (https=)
WO (1) WO2019027820A1 (https=)

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CN115064632A (zh) * 2022-05-19 2022-09-16 西安赛富乐斯半导体科技有限公司 一种基于量子点显色技术的Micro LED芯片及其制造方法
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