JP2020515502A - 光透過性フィルムの製造法 - Google Patents
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Abstract
Description
セラミック材料を準備する工程であって、該セラミック材料が380nm〜1000nmの波長を有する光に透過性である工程と、
セラミック材料の少なくともいくつかの成分を互いに接着させるために電磁放射線を使用する工程であって、該電磁放射線が450nmより短い波長を有する工程と、
を含む。
エタノール中のマンガンドープ二酸化チタンナノ粒子のモノ分散系を含むペースト状のナノ粒子セラミック材料を、超音波撹拌して、良好な分散を得た。次に、これをメイヤーロッドで塗布して、PET表面(基板とも呼ぶ)に名目10〜20ミクロンの塗膜を与えた。溶液が急速に乾燥する間に、ちりめん状のしわが、ほとんどまたは全く観察されなかった。メイヤーロッドは溝付き面を有するので、ロッドを引いて平面を移動させるときに既知量の液体被覆材料が残る。200〜1000nmの波長を有し、100〜1000マイクロ秒持続する電磁放射線のシングルパルスで該平面を処理して、ナノ粒子セラミックペースト材料のいくつかの成分を互いに接着させた。得られたフィルムは、優れた接着性、および酸素透過率(OTR)に関するフィルムの向上した気体バリア特性を示した。対照試料は38.8cc/m2/日のOTRを有し、被覆試料は5.6cc/m2/日のOTRを有していた。ナノ粒子セラミックペースト材料は、360〜760nmの波長を有する光に透過性であった。
2つの試料を調製し、第一試料は水中で安定化した二酸化チタンの単一成分セラミック材料を使用し、第二セラミック材料は、3%のZnOを添加し、エタノールで希釈した同じ溶液を使用した。得られた2つのフィルムは、第二フィルムの減少した固形分により、異なる厚さを有すると考えられた。しかし、第二試料は異なる大きさの粒子を使用し、これらの粒子の比率は3:1であった。それによって、粒子の充填密度が向上した。得られたこれらのフィルムのバリア特性は、2成分系に関して、より厚い単一成分フィルムより良好な気体バリア特性を示した。したがって、バリア性能は異なっていた。前記実施例1で概説したのと同様の処理後に、第一の、より厚い単一成分フィルムは、10.6cc/m2/日のOTRおよび23.7g/m3/日の水蒸気透過率(MVTR)を有し、これに対して、より薄い2成分フィルムは、4.66cc/m2/日のOTRおよび5.02g/m3/日のMVTRを有していた。これは、第二ナノ粒子の少量添加が有益効果を有し、より厚いフィルムに基づいて予想された特性より意外にも優れていたことを示している。別の方法では固体重量により3倍の厚さになるフィルムを、2成分フィルムと同じ厚さに作製した。
50nmの大きさのマンガンドープ二酸化チタンナノ粒子、5〜15nmの大きさのケイ素ナノ粒子、20nmの大きさの中空ケイ素ナノ粒子、50nmの大きさのマンガンドープ酸化亜鉛、20nmの大きさの酸化亜鉛および30nmの大きさのバナジウムドープ酸化亜鉛の懸濁液を使用して、セラミック材料の試料を調製した。全ての材料を5mLのエタノールと定量混合し、担体PET織布に吹付塗布した。200〜1000nmの波長を有する電磁放射線に全ての試料を曝露して、少なくともいくらかのそれらの成分を互いに接着させた。5〜15nmの粒径の二酸化ケイ素試料は、200〜450nmの波長範囲におけるそれらの非常に低い吸収により、テープ試験した場合に、妥当な接着を示さなかった。1000マイクロ秒のパルス持続時間を有する500ボルト未満の初期電圧パルスは、妥当な接着をほとんどまたは全く有さない試料を生じた。残りの全ての試料は、200〜1000nmの波長において、初期電圧パルスの150%のパルス、すなわち700〜750ボルトのパルスに、300マイクロ秒の持続時間で曝露した場合に、良好な結果を示した。
Claims (18)
- 光透過性フィルムの製造法であって、
セラミック材料を準備する工程であって、前記セラミック材料が380nm〜1000nmの波長を有する光に透過性である工程と、
前記セラミック材料の少なくともいくつかの成分を互いに接着させるために電磁放射線を使用する工程であって、前記電磁放射線が450nmより短い波長を有する工程と、
を含む製造法。 - 前記電磁放射線が450nmより短い波長分布を有する、請求項1に記載の製造法。
- 前記セラミック材料が少なくとも2つの成分を含み、前記少なくとも2つの成分が、1つまたはそれ以上の異なる大きさ、異なる形であり、かつ異なる化学組成を有する、請求項1または2に記載の製造法。
- 前記少なくとも2つの成分が少なくとも実質的に球形である、請求項3に記載の製造法。
- 前記少なくとも2つの成分が異なる大きさであり、第一成分の直径が第二成分より25〜35%小さい、請求項4に記載の製造法。
- 前記セラミック材料の少なくともいくつかの成分が扁球形である、請求項1〜5のいずれか一項に記載の製造法。
- 前記セラミック材料中に極微量の前記少なくともいくつかの成分が存在する、請求項1〜6のいずれか一項に記載の製造法。
- 前記セラミック材料が、450nmより短い波長の前記電磁放射線を吸収する、請求項1〜7のいずれか一項に記載の製造法。
- 前記セラミック材料の前記少なくともいくつかの成分を互いに接着させるために使用される前記電磁放射線が、パルス電磁放射線である、請求項1〜8のいずれか一項に記載の製造法。
- 前記パルス電磁放射線が、パルス光放出システムによって発生される、請求項9に記載の製造法。
- 前記セラミック材料の前記少なくともいくつかの成分を互いに接着させるために使用される前記電磁放射線が、200nm〜450nmの波長を有する、請求項1〜10のいずれか一項に記載の製造法。
- 前記セラミック材料が、380nm〜760nmの波長を有する光に透過性である、請求項1〜11のいずれか一項に記載の製造法。
- 基板を準備することをさらに含み、前記基板に前記セラミック材料を付着させる工程を含む、請求項1〜12のいずれか一項に記載の製造法。
- 前記基板が非導電性であり、前記基板に前記セラミック材料を付着させる工程が周囲雰囲気で行われる、請求項13に記載の製造法。
- 前記セラミック材料の前記少なくともいくつかの成分を互いに接着させるために必要とされる前記電磁放射線のエネルギーを計算する工程をさらに含む、請求項1〜14のいずれか一項に記載の製造法。
- 前記セラミック材料の前記少なくともいくつかの成分が前記基板に隣接している場合に、前記電磁放射線が前記少なくともいくつかの成分を前記基板に接着させる、請求項13〜15のいずれか一項に記載の製造法。
- 前記光透過性フィルムが光電子デバイスの一部であり、前記光電子デバイスが一連の溝を含み、前記一連の溝の各溝が第一面および第二面ならびにそれらの間の空洞を有し、前記空洞が第一半導体材料で少なくとも部分的に満たされ、前記第一面が導体材料で被覆され、前記第二面が第二半導体材料で被覆されている、請求項1〜16のいずれか一項に記載の製造法。
- 前記光透過性フィルムが100〜400nmの厚さである、請求項17に記載の製造法。
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