JP2020512703A5 - - Google Patents
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- Publication number
- JP2020512703A5 JP2020512703A5 JP2019553500A JP2019553500A JP2020512703A5 JP 2020512703 A5 JP2020512703 A5 JP 2020512703A5 JP 2019553500 A JP2019553500 A JP 2019553500A JP 2019553500 A JP2019553500 A JP 2019553500A JP 2020512703 A5 JP2020512703 A5 JP 2020512703A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- cathode
- anode
- anode metal
- semiconductor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims 48
- 239000002184 metal Substances 0.000 claims 48
- 239000010410 layer Substances 0.000 claims 43
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000010949 copper Substances 0.000 claims 6
- 230000003647 oxidation Effects 0.000 claims 6
- 238000007254 oxidation reaction Methods 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 5
- 239000012790 adhesive layer Substances 0.000 claims 5
- 229910052802 copper Inorganic materials 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 239000011777 magnesium Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/473,294 US10593638B2 (en) | 2017-03-29 | 2017-03-29 | Methods of interconnect for high density 2.5D and 3D integration |
| US15/473,294 | 2017-03-29 | ||
| PCT/US2018/024778 WO2018183453A1 (en) | 2017-03-29 | 2018-03-28 | Methods of interconnect for high density 2.5d and 3d integration |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020512703A JP2020512703A (ja) | 2020-04-23 |
| JP2020512703A5 true JP2020512703A5 (https=) | 2021-02-18 |
| JP7145169B2 JP7145169B2 (ja) | 2022-09-30 |
Family
ID=62002720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019553500A Active JP7145169B2 (ja) | 2017-03-29 | 2018-03-28 | 高密度２．５ｄおよび３ｄ集積のための相互接続の方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10593638B2 (https=) |
| EP (1) | EP3580779B1 (https=) |
| JP (1) | JP7145169B2 (https=) |
| KR (1) | KR102496142B1 (https=) |
| CN (1) | CN110476240B (https=) |
| WO (1) | WO2018183453A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10943791B2 (en) * | 2018-10-31 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern formation method and method for manufacturing a semiconductor device |
| US11658122B2 (en) | 2019-03-18 | 2023-05-23 | Intel Corporation | EMIB patch on glass laminate substrate |
| US11211378B2 (en) * | 2019-07-18 | 2021-12-28 | International Business Machines Corporation | Heterogeneous integration structure for artificial intelligence computing |
| KR20240165937A (ko) | 2022-03-24 | 2024-11-25 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 구리 표면 보호용 조성물, 그리고 이것을 이용한 반도체 중간체 및 반도체의 제조방법 |
| CN117525061A (zh) * | 2022-07-25 | 2024-02-06 | 矽磐微电子(重庆)有限公司 | 扇出型系统级封装结构及其制作方法 |
| CN115732407B (zh) * | 2022-12-06 | 2026-04-24 | 通富微电子股份有限公司 | 分散硅中介芯片封装方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3452795B2 (ja) * | 1997-05-07 | 2003-09-29 | 東京エレクトロン株式会社 | 塗布膜形成方法および塗布装置 |
| JP3654485B2 (ja) * | 1997-12-26 | 2005-06-02 | 富士通株式会社 | 半導体装置の製造方法 |
| US6190940B1 (en) * | 1999-01-21 | 2001-02-20 | Lucent Technologies Inc. | Flip chip assembly of semiconductor IC chips |
| US6703069B1 (en) * | 2002-09-30 | 2004-03-09 | Intel Corporation | Under bump metallurgy for lead-tin bump over copper pad |
| US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
| US20050003650A1 (en) * | 2003-07-02 | 2005-01-06 | Shriram Ramanathan | Three-dimensional stacked substrate arrangements |
| US6979647B2 (en) * | 2003-09-02 | 2005-12-27 | Texas Instruments Incorporated | Method for chemical etch control of noble metals in the presence of less noble metals |
| JP3794403B2 (ja) * | 2003-10-09 | 2006-07-05 | セイコーエプソン株式会社 | 半導体装置 |
| JP2006179570A (ja) * | 2004-12-21 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法 |
| US7402509B2 (en) * | 2005-03-16 | 2008-07-22 | Intel Corporation | Method of forming self-passivating interconnects and resulting devices |
| KR101534682B1 (ko) * | 2009-03-13 | 2015-07-08 | 삼성전자주식회사 | 범프에 스틱을 구비하는 반도체 장치 |
| US8841766B2 (en) * | 2009-07-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
| CN102005397B (zh) * | 2009-08-31 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | 提高芯片键合块抗腐蚀性的方法 |
| US8993431B2 (en) * | 2010-05-12 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating bump structure |
| US9048135B2 (en) * | 2010-07-26 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Copper pillar bump with cobalt-containing sidewall protection |
| US8598030B2 (en) * | 2010-08-12 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for making conductive post with footing profile |
| US10128206B2 (en) * | 2010-10-14 | 2018-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive pillar structure |
| CN102569171B (zh) * | 2010-11-18 | 2015-02-04 | 精材科技股份有限公司 | 改善冠状缺陷的线路结构及其制作方法 |
| US8242011B2 (en) * | 2011-01-11 | 2012-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming metal pillar |
| JP6118816B2 (ja) * | 2012-11-16 | 2017-04-19 | 日立オートモティブシステムズ株式会社 | 接合部材、単電池および組電池 |
| CN103035604B (zh) * | 2012-12-17 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | 一种倒装芯片封装结构及其制作工艺 |
| KR20140130915A (ko) | 2013-05-02 | 2014-11-12 | 삼성전자주식회사 | 범프를 갖는 반도체 소자를 제조하는 방법 |
| US9412709B2 (en) | 2013-05-21 | 2016-08-09 | Freescale Semiconductor, Inc. | Semiconductor structure with sacrificial anode and passivation layer and method for forming |
| KR102192195B1 (ko) * | 2014-07-28 | 2020-12-17 | 삼성전자주식회사 | 솔더 조인트를 갖는 반도체 소자 및 그 형성 방법 |
| KR102245825B1 (ko) * | 2014-09-04 | 2021-04-30 | 삼성전자주식회사 | 반도체 패키지 |
| US9496238B2 (en) * | 2015-02-13 | 2016-11-15 | Advanced Semiconductor Engineering, Inc. | Sloped bonding structure for semiconductor package |
| US20170051426A1 (en) * | 2015-08-19 | 2017-02-23 | Apple Inc. | Processes to avoid anodic oxide delamination of anodized high strength aluminum alloys |
| US10181448B2 (en) * | 2016-03-22 | 2019-01-15 | Advanced Semiconductor Engineering, Inc. | Semiconductor devices and semiconductor packages |
| US9859258B2 (en) * | 2016-05-17 | 2018-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US10020281B2 (en) * | 2016-08-30 | 2018-07-10 | International Business Machines Corporation | Metal bonding pads for packaging applications |
| DE102016119485A1 (de) * | 2016-10-12 | 2018-04-12 | Infineon Technologies Ag | Chipträger mit elektrisch leitfähiger Schicht, die sich über eine wärmeleitfähige dielektrische Sheet-Struktur hinaus erstreckt |
-
2017
- 2017-03-29 US US15/473,294 patent/US10593638B2/en active Active
-
2018
- 2018-03-28 CN CN201880022465.3A patent/CN110476240B/zh active Active
- 2018-03-28 KR KR1020197032079A patent/KR102496142B1/ko active Active
- 2018-03-28 JP JP2019553500A patent/JP7145169B2/ja active Active
- 2018-03-28 WO PCT/US2018/024778 patent/WO2018183453A1/en not_active Ceased
- 2018-03-28 EP EP18718550.9A patent/EP3580779B1/en active Active
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