CN103035604B - 一种倒装芯片封装结构及其制作工艺 - Google Patents

一种倒装芯片封装结构及其制作工艺 Download PDF

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CN103035604B
CN103035604B CN201210550325.8A CN201210550325A CN103035604B CN 103035604 B CN103035604 B CN 103035604B CN 201210550325 A CN201210550325 A CN 201210550325A CN 103035604 B CN103035604 B CN 103035604B
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weld pad
metal level
projection
flip chip
exposed
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CN103035604A (zh
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谭小春
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Hangzhou Silergy Semiconductor Technology Ltd
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Hangzhou Silergy Semiconductor Technology Ltd
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Priority to CN201210550325.8A priority Critical patent/CN103035604B/zh
Publication of CN103035604A publication Critical patent/CN103035604A/zh
Priority to TW102136211A priority patent/TWI529869B/zh
Priority to US14/094,278 priority patent/US9653355B2/en
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Publication of CN103035604B publication Critical patent/CN103035604B/zh
Priority to US15/446,169 priority patent/US9735122B2/en
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  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract

本发明公开了一种倒装芯片封装结构及其制作工艺，包括位于芯片之上的焊垫；位于芯片和所述焊垫之上的第一隔离层，所述第一隔离层设有通孔，以选择性的将所述焊垫的部分上表面裸露；位于所述裸露焊垫上的第二金属层和位于所述第二金属层上的凸块，其中，所述第二金属层完全覆盖所述裸露的焊垫，所述凸块的侧边沿不接触所述第一隔离层。本发明中所述凸块的侧边沿不接触所述第一隔离层，从而避免了因接触而造成钝化层破裂的问题，提高了封装结构的可靠性，同时无需对第一隔离层进行附加保护，降低了封装结构的成本；本发明中采用的第二金属层可同时现实焊垫和凸块的紧密焊接和对焊垫防腐蚀保护。

Description

一种倒装芯片封装结构及其制作工艺
技术领域
本发明涉及一种半导体封装技术，尤其涉及一种倒装芯片封装结构及其制作工艺。
背景技术
焊料凸块用以将半导体集成电路（通常称为“芯片”）的有源表面连接至基板或引线框架上，以实现芯片和基板（或引线框架）间的电气连接和机械连接，在倒装芯片封装技术中，凸块的尺寸、结构以及传导性能对封装的结果有着很大的影响。
图1所示为现有技术中的一种倒装芯片封装结构的示意图，芯片1上具有一焊垫2，第一隔离层3覆盖于所述芯片1上的剩余区域，第一隔离层上具有一通孔以使所述焊垫的一部分裸露，焊料凸块4（例如图1中的柱状凸块）沉积在裸露的焊垫上表面。如图1所示，现有的凸块底面宽度往往要大于焊垫的宽度，以至于凸块4的边缘处会有一部分覆盖在钝化层的表面上。这样，在封装、运输或可靠性测试中，由于热应力和机械应力的影响，导致处于凸块边缘处的钝化层的表面容易破碎。一般情况下，需要一个保护层5（如尼龙材料）覆盖于钝化层和凸块的接触处以防止钝化层表面发生破碎，但是在较大的压力下，所述保护层并不能完全起到保护作用，此外增加的保护层也提高了最终产品的成本。
发明内容
有鉴于此，本发明的目的在于提供一种新型的倒装芯片封装结构及其制作工艺，解决了现有技术中芯片上的钝化层表面与凸块接触中造成的破裂问题。
为解决上述技术问题，本发明采用如下技术方案：
依据本发明的一种倒装芯片封装结构，包括：
位于芯片之上的焊垫；
位于芯片和所述焊垫之上的第一隔离层，所述第一隔离层设有通孔，以选择性的将所述焊垫的部分上表面裸露；
位于所述裸露焊垫上的第二金属层和位于所述第二金属层上的凸块，其中，所述第二金属层完全覆盖所述裸露的焊垫，所述凸块的侧边沿不接触所述第一隔离层。
优选的，所述第一隔离层包括芯片的钝化保护层。
进一步的，所述第二金属层用以使所述焊垫和所述凸块紧密焊接。
优选的，所述第二金属层包括一钛铜金属层。
进一步的，所述第二金属层用以使所述焊垫和所述凸块紧密焊接并且防止剩余的裸露焊垫表面被腐蚀。
优选的，所述第二金属层包括一钛钨铜金属层。
优选的，所述凸块为锡凸块或铜凸块或金凸块。
依据本发明的一种倒装芯片封装结构的制作工艺，包括：
在芯片上形成一焊垫；
在芯片和所述焊垫上沉积第一隔离层，所述第一隔离层设有通孔，以选择性的将所述焊垫的部分上表面裸露；
在裸露焊垫上沉积第二金属层，然后在所述第二金属层上形成凸块，其中，所述第二金属层完全覆盖所述裸露的焊垫，所述凸块的侧边沿不接触所述第一隔离层。
优选的，所述第一隔离层包括芯片的钝化保护层。
优选的，形成所述第二金属层的步骤包括：在所述焊垫的裸露表面先溅射一钛金属层，再在所述钛金属层上溅射一铜金属层。
优选的，形成所述第二金属层的步骤包括：在所述焊垫的裸露表面先溅射一钛金属层，再在所述钛金属层上溅射一钨金属层，之后在所述钨金属层上溅射一铜金属层。
采用依据本发明的倒装芯片封装结构，由于所述凸块的侧边沿不与第一隔离层接触，因此避免了由于接触产生的第一隔离层破裂的问题，提高了封装结构的可靠性，且无需对第一隔离层进行附加保护，降低了封装结构的成本；覆盖焊垫裸露区域的第二金属层不但使所述焊垫与凸块紧密焊接并有效保护了焊垫上表面的裸露金属不受腐蚀。
附图说明
图1所示为采用现有技术的一种倒装芯片封装结构的示意图；
图2所示为依据本发明的一种倒装芯片封装结构的示意图；
图3A至图3E所示依据本发明一实施例的倒装芯片封装结构制作工艺的示意图；
在下文中，相同的标号表示相同的组件：
1：芯片；
2：焊垫；
3：第一隔离层；
4：凸块；
5：保护层；
6：第二金属层。
具体实施方式
以下结合附图对本发明的几个优选实施例进行详细描述，但本发明并不仅仅限于这些实施例。本发明涵盖任何在本发明的精髓和范围上做的替代、修改、等效方法以及方案。为了使公众对本发明有彻底的了解，在以下本发明优选实施例中详细说明了具体的细节，而对本领域技术人员来说没有这些细节的描述也可以完全理解本发明。
以下结合具体实施例详细说明依据本发明的倒装芯片封装结构。参考图2，所示为依据本发明的一种倒装芯片封装结构的示意图；在芯片1的有源表面有一焊垫2，第一隔离层3覆盖所述芯片1和焊垫2之上，并且所述第一隔离层3设有通孔，以选择性的将所述焊垫的部分上表面裸露。其中，所述焊垫的材质为铝、铝合金或其它导电材料；第一隔离层为一由氮化硅或氧化硅形成的钝化保护层，其用以保护芯片不受腐蚀和其它损害。
进一步包括位于所述焊垫2上的第二金属层6和位于所述第二金属层6上的凸块4，其中，所述凸块4的侧边沿不接触所述第一隔离层3。其中，所述第二金属层6完全覆盖所述裸露的焊垫2的表面，在一实施例中，所述第二金属层用以使所述焊垫和凸块紧密焊接，所述第二金属层优选为钛铜金属层；在另一实施例中，所述第二金属层用以使所述焊垫和凸块紧密焊接并且防止剩余的裸露焊垫表面被腐蚀，所述第二金属层优选为钛钨铜金属层。本发明实施例中，所述凸块4的侧边沿不接触所述第一隔离层3，例如所述凸块4可为锡、铜或金金属形成的柱状凸块，其底面宽度小于顶端宽度，因此避免了由于接触产生的第一隔离层3破裂的问题，提高了封装结构的可靠性，同时无需额外的保护层对钝化层进行保护，节省了成本。
以下结合附图3A-3E所示的依据本发明一实施例的倒装芯片封装结构制作工艺的示意图来详细说明本发明。
如图3A所示，首先，在制备好的芯片1的有源表面上沉积一层金属如铝金属作为焊垫2，焊垫可以由任何常规方式形成，如溅射、电镀等。
其次，如图3B所示，在芯片1的有源表面和焊垫2上覆盖一第一隔离层3，所述第一隔离层为钝化保护层，以保护芯片内部电路；
再次，在所述第一隔离层3设置通孔，以选择性的将所述焊垫的部分上表面裸露；如图3C所示，所述通孔的形状和大小可根据需要选择，如本实施例中根据后续凸块的形状以选择通孔为长方形；
之后，如图3D所示，在所述通孔处的裸露的焊垫上沉积第二金属层6，所述第二金属层6用以使所述焊垫与所述凸块4形成良好的电气连接和机械连接，其具体步骤为在所述通孔内的裸露的焊垫2上先溅射一层钛金属层，再在所述钛金属层上溅射一层铜金属层，其中，所述第二金属层6完全覆盖所述通孔内裸露的焊垫。需要说明的是，第二金属层6中的钛金属层与焊垫的铝金属层具有良好的共结面，而上层的铜金属层可以与构成凸块的金属材质具有良好的共结面，从而增强焊垫与凸块连接的可靠性。
优选的，所述第二金属层6不但用以使所述焊垫与所述凸块4形成良好的电气连接和机械连接，并且防止剩余的裸露焊垫表面被腐蚀，其具体步骤为在所述通孔内的裸露的焊垫2上先溅射一层钛金属层，再在所述钛金属层上溅射一层钨金属层，之后在所述钨金属层上溅射一层铜金属层。这种优选的方案能有效保护芯片内部电路不受腐蚀或其它因素影响，本发明优选此方案。
然后，如图3E所示，在所述第二金属层上沉积一金属层以形成凸块4，其具体步骤为：
在通孔处焊垫的上面涂覆光刻胶；
为了保证所述凸块的底面覆盖所述裸露的焊垫的一部分表面而非全部，需要对所述光刻胶进行选择性的曝光及显影，这样可以形成与所述裸露的焊垫的部分表面对应的电镀凹槽；所述电镀凹槽的侧边沿不接触所述第一隔离层；
在所述电镀凹槽内电镀金属如铜金属形成高度低于所述电镀凹槽高度的凸块；
去除剩余的光刻胶。
这里，所述凸块可以为锡凸块或铜凸块或金凸块，并且所述凸块的形状为下窄上宽。
从上述倒装芯片封装结构的制作工艺中可以看出，本发明实施例中的第二金属层不但实现了使焊垫金属层与凸块紧密焊接，而且将未与凸块焊接的裸露的焊垫金属层也保护起来了，以防止裸露出来的焊垫被腐蚀而影响芯片的性能。
综上所述，依照本发明所公开的倒装芯片封装结构以及制作工艺，使所述凸块的侧边沿不接触所述第一隔离层，从而避免了凸块与钝化层接触而造成钝化层破裂的问题，提高了封装结构的可靠性，同时无需对第一隔离层进行附加保护，降低了封装结构的成本；本发明中采用的第二金属层可同时现实焊垫和凸块的紧密焊接和对焊垫防腐蚀保护。
以上对依据本发明的优选实施例的倒装芯片封装结构及其制作工艺进行了详尽描述，本领域普通技术人员据此可以推知其他技术或者结构以及电路布局、元件等均可应用于所述实施例。
依照本发明的实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该发明仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本发明的原理和实际应用，从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。

Claims (12)

1.一种倒装芯片封装结构，其特征在于，包括：
位于芯片之上的焊垫；
位于芯片和所述焊垫之上的第一隔离层，所述第一隔离层包括芯片的钝化保护层，所述第一隔离层设有通孔，以选择性的将所述焊垫的部分上表面裸露；
位于所述裸露焊垫上的第二金属层和位于所述第二金属层上的凸块，其中，所述第二金属层完全覆盖所述裸露的焊垫，所述凸块的侧边沿不接触所述第一隔离层。
2.根据权利要求1所述的倒装芯片封装结构，其特征在于，所述第二金属层用以使所述焊垫和所述凸块紧密焊接。
3.根据权利要求2所述的倒装芯片封装结构，其特征在于，所述第二金属层包括一钛铜金属层。
4.根据权利要求1所述的倒装芯片封装结构，其特征在于，所述第二金属层用以使所述焊垫和所述凸块紧密焊接并且防止剩余的裸露焊垫表面被腐蚀。
5.根据权利要求4所述的倒装芯片封装结构，其特征在于，所述第二金属层包括一钛钨铜金属层。
6.根据权利要求1所述的倒装芯片封装结构，其特征在于，所述凸块为锡凸块或铜凸块或金凸块。
7.一种倒装芯片封装结构的制作工艺，其特征在于，包括：
在芯片上形成一焊垫；
在芯片和所述焊垫上沉积第一隔离层，所述第一隔离层包括芯片的钝化保护层，所述第一隔离层设有通孔，以选择性的将所述焊垫的部分上表面裸露；
在裸露焊垫上沉积第二金属层，然后在所述第二金属层上形成凸块，其中，所述第二金属层完全覆盖所述裸露的焊垫，所述凸块的侧边沿不接触所述第一隔离层。
8.根据权利要求7所述的倒装芯片封装结构的制作工艺，其特征在于，所述第二金属层用以使所述焊垫和所述凸块紧密焊接。
9.根据权利要求8所述的倒装芯片封装结构的制作工艺，其特征在于，形成所述第二金属层的步骤包括：在所述焊垫的裸露表面先溅射一钛金属层，再在所述钛金属层上溅射一铜金属层。
10.根据权利要求7所述的倒装芯片封装结构的制作工艺，其特征在于，所述第二金属层用以使所述焊垫和所述凸块紧密焊接并且防止剩余的裸露焊垫表面被腐蚀。
11.根据权利要求10所述的倒装芯片封装结构的制作工艺，其特征在于，形成所述第二金属层的步骤包括：在所述焊垫的裸露表面先溅射一钛金属层，再在所述钛金属层上溅射一钨金属层，之后在所述钨金属层上溅射一铜金属层。
12.根据权利要求7所述的倒装芯片封装结构的制作工艺，其特征在于，所述凸块为锡凸块或铜凸块或金凸块。
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