JP2020507678A5 - - Google Patents

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Publication number
JP2020507678A5
JP2020507678A5 JP2019542079A JP2019542079A JP2020507678A5 JP 2020507678 A5 JP2020507678 A5 JP 2020507678A5 JP 2019542079 A JP2019542079 A JP 2019542079A JP 2019542079 A JP2019542079 A JP 2019542079A JP 2020507678 A5 JP2020507678 A5 JP 2020507678A5
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JP
Japan
Prior art keywords
workpiece
pulse voltage
voltage source
coupled
plasma chamber
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Pending
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JP2019542079A
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English (en)
Japanese (ja)
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JP2020507678A (ja
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Priority claimed from US15/424,405 external-priority patent/US10373804B2/en
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Publication of JP2020507678A publication Critical patent/JP2020507678A/ja
Publication of JP2020507678A5 publication Critical patent/JP2020507678A5/ja
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JP2019542079A 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム Pending JP2020507678A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (2)

Publication Number Publication Date
JP2020507678A JP2020507678A (ja) 2020-03-12
JP2020507678A5 true JP2020507678A5 (enExample) 2021-02-25

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JP2019542079A Pending JP2020507678A (ja) 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム

Country Status (6)

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US (3) US10373804B2 (enExample)
JP (1) JP2020507678A (enExample)
KR (1) KR20190105243A (enExample)
CN (1) CN110249407A (enExample)
TW (1) TW201832620A (enExample)
WO (1) WO2018144374A1 (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
US10892140B2 (en) * 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
EP3580841A4 (en) 2017-02-07 2020-12-16 Eagle Harbor Technologies, Inc. TRANSFORMER-RESONANCE CONVERTER
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
KR102499709B1 (ko) 2018-08-10 2023-02-16 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
US10703654B2 (en) * 2018-11-07 2020-07-07 Pear Labs Llc Non-thermal multiple plasma gate devices
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2021134000A1 (en) 2019-12-24 2021-07-01 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
US10796887B2 (en) 2019-01-08 2020-10-06 Eagle Harbor Technologies, Inc. Efficient nanosecond pulser with source and sink capability for plasma control applications
JP7406965B2 (ja) * 2019-01-09 2023-12-28 東京エレクトロン株式会社 プラズマ処理装置
CN113228830B (zh) * 2019-01-09 2024-10-01 东京毅力科创株式会社 等离子体处理装置及等离子体处理方法
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
NL2022999B1 (en) 2019-04-24 2020-11-02 Prodrive Tech Bv Voltage waveform generator for plasma processing apparatuses
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
US11043387B2 (en) 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
CN110936596A (zh) * 2019-12-27 2020-03-31 河南先途智能科技有限公司 低温等离子技术处理鞋材表面的工艺方法
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) * 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US12142469B2 (en) * 2021-10-21 2024-11-12 Applied Materials, Inc. Plasma processing chambers configured for tunable substrate and edge sheath control
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
CN115159865B (zh) * 2022-07-26 2023-05-09 艾瑞森表面技术（苏州）股份有限公司 一种防眩光的表面处理方法
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US20240096594A1 (en) * 2022-09-19 2024-03-21 Adaptive Plasma Technology Corp. System for etching with a plasma
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
KR20250084155A (ko) 2022-09-29 2025-06-10 이글 하버 테크놀로지스, 인코포레이티드 고전압 플라즈마 제어
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
KR20240121029A (ko) 2023-02-01 2024-08-08 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
US20240347323A1 (en) * 2023-04-14 2024-10-17 Velvetch Llc Composite stage for electron enhanced material processing
JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP2004531880A (ja) * 2001-03-13 2004-10-14 アプライド マテリアルズ インコーポレイテッド 二重電極を有する基板の支持体
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
JP4753306B2 (ja) * 2006-03-29 2011-08-24 東京エレクトロン株式会社 プラズマ処理装置
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
JP2012044045A (ja) * 2010-08-20 2012-03-01 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
US8232193B2 (en) * 2010-07-08 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming Cu pillar capped by barrier layer
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP6212363B2 (ja) * 2012-11-19 2017-10-11 太陽誘電ケミカルテクノロジー株式会社 構造体及びその製造方法
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
JP6726856B2 (ja) * 2015-07-17 2020-07-22 パナソニックＩｐマネジメント株式会社 注意情報提示装置および注意情報提示方法
KR102744988B1 (ko) * 2015-11-16 2024-12-19 도쿄엘렉트론가부시키가이샤 제1 물질과 제2 물질을 가진 구조 패턴 층의 에칭 방법
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor

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