KR20190105243A - 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 - Google Patents

플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 Download PDF

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Publication number
KR20190105243A
KR20190105243A KR1020197025615A KR20197025615A KR20190105243A KR 20190105243 A KR20190105243 A KR 20190105243A KR 1020197025615 A KR1020197025615 A KR 1020197025615A KR 20197025615 A KR20197025615 A KR 20197025615A KR 20190105243 A KR20190105243 A KR 20190105243A
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KR
South Korea
Prior art keywords
workpiece
voltage source
biasing
pulsed voltage
pulsed
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Abandoned
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KR1020197025615A
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English (en)
Korean (ko)
Inventor
트래비스 코
필립 앨런 크라우스
레오니드 도프
프라부 고팔라자
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20190105243A publication Critical patent/KR20190105243A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020197025615A 2017-02-03 2018-01-29 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 Abandoned KR20190105243A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (1)

Publication Number Publication Date
KR20190105243A true KR20190105243A (ko) 2019-09-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197025615A Abandoned KR20190105243A (ko) 2017-02-03 2018-01-29 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템

Country Status (6)

Country Link
US (3) US10373804B2 (enExample)
JP (1) JP2020507678A (enExample)
KR (1) KR20190105243A (enExample)
CN (1) CN110249407A (enExample)
TW (1) TW201832620A (enExample)
WO (1) WO2018144374A1 (enExample)

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Also Published As

Publication number Publication date
CN110249407A (zh) 2019-09-17
US20190348258A1 (en) 2019-11-14
US20210134561A1 (en) 2021-05-06
US10923320B2 (en) 2021-02-16
JP2020507678A (ja) 2020-03-12
US20180226225A1 (en) 2018-08-09
US10373804B2 (en) 2019-08-06
WO2018144374A1 (en) 2018-08-09
TW201832620A (zh) 2018-09-01

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