JP2020507678A - プラズマリアクタ内での調整可能なワークピースバイアス用システム - Google Patents

プラズマリアクタ内での調整可能なワークピースバイアス用システム Download PDF

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Publication number
JP2020507678A
JP2020507678A JP2019542079A JP2019542079A JP2020507678A JP 2020507678 A JP2020507678 A JP 2020507678A JP 2019542079 A JP2019542079 A JP 2019542079A JP 2019542079 A JP2019542079 A JP 2019542079A JP 2020507678 A JP2020507678 A JP 2020507678A
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Japan
Prior art keywords
voltage source
workpiece
pulse
voltage
bias
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Pending
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JP2019542079A
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English (en)
Japanese (ja)
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JP2020507678A5 (enExample
Inventor
トラビス コー
トラビス コー
フィリップ アラン クラウス
フィリップ アラン クラウス
レオニド ドルフ
レオニド ドルフ
プラブ ゴパルラジャ
プラブ ゴパルラジャ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2020507678A publication Critical patent/JP2020507678A/ja
Publication of JP2020507678A5 publication Critical patent/JP2020507678A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019542079A 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム Pending JP2020507678A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (2)

Publication Number Publication Date
JP2020507678A true JP2020507678A (ja) 2020-03-12
JP2020507678A5 JP2020507678A5 (enExample) 2021-02-25

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019542079A Pending JP2020507678A (ja) 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム

Country Status (6)

Country Link
US (3) US10373804B2 (enExample)
JP (1) JP2020507678A (enExample)
KR (1) KR20190105243A (enExample)
CN (1) CN110249407A (enExample)
TW (1) TW201832620A (enExample)
WO (1) WO2018144374A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法

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JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法
JP2025122466A (ja) * 2024-02-08 2025-08-21 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法

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US20180226225A1 (en) 2018-08-09
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