JPWO2010008006A1 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
プラズマ処理装置およびプラズマ処理方法 Download PDFInfo
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- JPWO2010008006A1 JPWO2010008006A1 JP2010520877A JP2010520877A JPWO2010008006A1 JP WO2010008006 A1 JPWO2010008006 A1 JP WO2010008006A1 JP 2010520877 A JP2010520877 A JP 2010520877A JP 2010520877 A JP2010520877 A JP 2010520877A JP WO2010008006 A1 JPWO2010008006 A1 JP WO2010008006A1
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- 238000003672 processing method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 description 22
- 239000012212 insulator Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Toxicology (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Abstract
Description
上記式において、ε0は誘電体の誘電率、Sは静電チャック61の面積、dは静電チャック61の厚さであり、電圧Vを印加した場合の電荷Qは、Q=C×Vで表される。ここで、電流が流れる時間(時定数)τは、ここでは外部回路やプラズマに起因するプラズマ抵抗値Rにより決定され、τ=R×Cで表される。
20 真空ポンプ
21 真空バルブ
30 キャリアガス源
31、33 ガスバルブ
32 処理ガス源
40 プラズマ発生用コイル
41 プラズマ発生電源
50 基板
55 レジストマスク
60 基板ホルダ
61 静電チャック
63 絶縁板
70 バイアス用電源
100 制御部
110 プローブ計測器
120 電流計測機構
Claims (10)
- プラズマを用いて真空容器内で基板を処理するプラズマ処理装置であって、
前記基板を保持するための静電チャックと、
正負両極性を持つパルスをバイアス電圧として印加するためのパルス電源と、
前記パルスの正負両極それぞれについて制御する制御手段と、を含むことを特徴とするプラズマ処理装置。 - 前記真空容器内のプラズマ抵抗値を計測する計測手段を更に備え、
前記制御手段は、正バイアスパルスの印加時間を、前記静電チャックに起因するあらかじめ知られているコンデンサ容量と前記計測手段で計測されたプラズマ抵抗値の積以下とすることを特徴とする請求項1に記載のプラズマ処理装置。 - パルス印加中の電流を計測する電流計測手段を更に備え、
前記制御手段は、前記電流計測手段から計測された電流値を受け、正バイアスパルス印加時に計測された電流の時間積分値と同等の電流の時間積分値になるように正バイアスパルス印加後に逆バイアスパルスを印加することにより、正バイアスパルスの印加によって前記基板あるいは静電チャックに残留する電荷のデチャージを行うことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記パルス電源の周波数が10kHzを超えるものであることを特徴とする請求項1に記載のプラズマ処理装置。
- プラズマを用いて基板を処理するプラズマ処理方法であって、
前記基板を静電チャックで保持し、
正負両極性を持つパルスをバイアス電圧として印加し、
前記パルスの正負両極それぞれについて制御することを特徴とするプラズマ処理方法。 - プラズマ抵抗値を計測し、正バイアスパルスの印加時間を、前記静電チャックに起因するあらかじめ知られているコンデンサ容量と計測されたプラズマ抵抗値の積以下とすることを特徴とする請求項5に記載のプラズマ処理方法。
- パルス印加中の電流を計測し、正バイアスパルス印加時に計測された電流の時間積分値と同等の電流の時間積分値になるように正バイアスパルス印加後に逆バイアスパルスを印加することにより、正バイアスパルスの印加によって前記基板あるいは静電チャックに残留する電荷のデチャージを行うことを特徴とする請求項5に記載のプラズマ処理方法。
- 前記パルスの周波数を10kHzを超えるものとすることを特徴とする請求項5に記載のプラズマ処理方法。
- 正バイアスパルスの1パルス当たりの電圧を多段階に変化させることを特徴とする請求項5に記載のプラズマ処理方法。
- 正バイアスパルス印加後の逆バイアスパルスの印加を不連続とすることを特徴とする請求項5に記載のプラズマ処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010520877A JP5574962B2 (ja) | 2008-07-16 | 2009-07-15 | プラズマ処理装置およびプラズマ処理方法 |
Applications Claiming Priority (4)
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JP2008185016 | 2008-07-16 | ||
JP2008185016 | 2008-07-16 | ||
PCT/JP2009/062776 WO2010008006A1 (ja) | 2008-07-16 | 2009-07-15 | プラズマ処理装置およびプラズマ処理方法 |
JP2010520877A JP5574962B2 (ja) | 2008-07-16 | 2009-07-15 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
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JPWO2010008006A1 true JPWO2010008006A1 (ja) | 2012-01-05 |
JP5574962B2 JP5574962B2 (ja) | 2014-08-20 |
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JP2010520877A Expired - Fee Related JP5574962B2 (ja) | 2008-07-16 | 2009-07-15 | プラズマ処理装置およびプラズマ処理方法 |
Country Status (5)
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US (1) | US8366833B2 (ja) |
JP (1) | JP5574962B2 (ja) |
KR (1) | KR101283360B1 (ja) |
TW (1) | TWI390582B (ja) |
WO (1) | WO2010008006A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6013740B2 (ja) * | 2012-02-03 | 2016-10-25 | 東京エレクトロン株式会社 | 離脱制御方法及びプラズマ処理装置の制御装置 |
GB201321463D0 (en) * | 2013-12-05 | 2014-01-22 | Oxford Instr Nanotechnology Tools Ltd | Electrostatic clamping method and apparatus |
US9530626B2 (en) * | 2014-07-25 | 2016-12-27 | Tokyo Electron Limited | Method and apparatus for ESC charge control for wafer clamping |
JP6442242B2 (ja) * | 2014-11-17 | 2018-12-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US10510575B2 (en) * | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
US10811296B2 (en) * | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
KR102277822B1 (ko) * | 2019-07-09 | 2021-07-14 | 세메스 주식회사 | 기판 처리 장치 |
KR20210006682A (ko) | 2019-07-09 | 2021-01-19 | 세메스 주식회사 | 기판 처리 장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130826A (ja) * | 1993-11-01 | 1995-05-19 | Anelva Corp | 静電チャック |
JPH0817808A (ja) * | 1994-04-27 | 1996-01-19 | Anelva Corp | プラズマ処理方法および装置並びに基板脱離方法及び印加電圧の制御装置 |
JPH11330217A (ja) * | 1998-05-12 | 1999-11-30 | Ulvac Corp | 静電チャックプレート表面からの基板離脱方法 |
JP2000049216A (ja) * | 1998-07-28 | 2000-02-18 | Mitsubishi Electric Corp | プラズマ処理装置および当該装置で用いられる静電チャック吸着方法 |
JP2001358129A (ja) * | 2000-06-16 | 2001-12-26 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
WO2002059954A1 (fr) * | 2001-01-25 | 2002-08-01 | Tokyo Electron Limited | Appareil de gravure par plasma et procede de gravure par plasma |
JP2003077904A (ja) * | 1996-03-01 | 2003-03-14 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2007073568A (ja) * | 2005-09-05 | 2007-03-22 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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US5273610A (en) * | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
TW293231B (ja) | 1994-04-27 | 1996-12-11 | Aneruba Kk | |
US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
US7100532B2 (en) * | 2001-10-09 | 2006-09-05 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
US7169255B2 (en) * | 2002-02-15 | 2007-01-30 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
JP5102615B2 (ja) | 2005-04-04 | 2012-12-19 | パナソニック株式会社 | プラズマ処理方法及び装置 |
-
2009
- 2009-07-14 TW TW098123744A patent/TWI390582B/zh not_active IP Right Cessation
- 2009-07-15 WO PCT/JP2009/062776 patent/WO2010008006A1/ja active Application Filing
- 2009-07-15 JP JP2010520877A patent/JP5574962B2/ja not_active Expired - Fee Related
- 2009-07-15 KR KR1020117000289A patent/KR101283360B1/ko active IP Right Grant
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2011
- 2011-01-05 US US12/985,004 patent/US8366833B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07130826A (ja) * | 1993-11-01 | 1995-05-19 | Anelva Corp | 静電チャック |
JPH0817808A (ja) * | 1994-04-27 | 1996-01-19 | Anelva Corp | プラズマ処理方法および装置並びに基板脱離方法及び印加電圧の制御装置 |
JP2003077904A (ja) * | 1996-03-01 | 2003-03-14 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
JPH11330217A (ja) * | 1998-05-12 | 1999-11-30 | Ulvac Corp | 静電チャックプレート表面からの基板離脱方法 |
JP2000049216A (ja) * | 1998-07-28 | 2000-02-18 | Mitsubishi Electric Corp | プラズマ処理装置および当該装置で用いられる静電チャック吸着方法 |
JP2001358129A (ja) * | 2000-06-16 | 2001-12-26 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
WO2002059954A1 (fr) * | 2001-01-25 | 2002-08-01 | Tokyo Electron Limited | Appareil de gravure par plasma et procede de gravure par plasma |
JP2007073568A (ja) * | 2005-09-05 | 2007-03-22 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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Publication number | Publication date |
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KR101283360B1 (ko) | 2013-07-08 |
US20110097510A1 (en) | 2011-04-28 |
WO2010008006A1 (ja) | 2010-01-21 |
TWI390582B (zh) | 2013-03-21 |
KR20110016486A (ko) | 2011-02-17 |
JP5574962B2 (ja) | 2014-08-20 |
TW201009879A (en) | 2010-03-01 |
US8366833B2 (en) | 2013-02-05 |
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