WO2002059954A1 - Appareil de gravure par plasma et procede de gravure par plasma - Google Patents

Appareil de gravure par plasma et procede de gravure par plasma Download PDF

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Publication number
WO2002059954A1
WO2002059954A1 PCT/JP2002/000311 JP0200311W WO02059954A1 WO 2002059954 A1 WO2002059954 A1 WO 2002059954A1 JP 0200311 W JP0200311 W JP 0200311W WO 02059954 A1 WO02059954 A1 WO 02059954A1
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WO
WIPO (PCT)
Prior art keywords
electrostatic chuck
potential
plasma
charge
plasma processing
Prior art date
Application number
PCT/JP2002/000311
Other languages
English (en)
Japanese (ja)
Inventor
Kimihiro Higuchi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2002560185A priority Critical patent/JPWO2002059954A1/ja
Publication of WO2002059954A1 publication Critical patent/WO2002059954A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Definitions

  • the present invention relates to a plasma processing apparatus and a plasma processing method, and is suitably applied to a case where a potential of an object to be processed in plasma is obtained.
  • Japanese Patent Application Laid-Open No. 6-232088 discloses a technique of monitoring VDC by a monitor terminal installed completely independently of a power supply circuit. .
  • it is necessary to form a signal path for an independent monitor which may complicate the device configuration. Disclosure of the invention
  • an object of the present invention is to provide a simple configuration in which the potential of an object to be processed in plasma is It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of accurately determining the value of the plasma processing apparatus.
  • the present invention provides an electrostatic chuck that attracts an object to be processed, a DC voltage source that applies a DC voltage to the electrostatic chuck, and generates plasma on the object to be processed.
  • a plasma generation unit a charge amount calculation unit that calculates an amount of charge stored in the electrostatic chuck, and the object to be processed based on a change in the amount of charge stored in the electrostatic chuck before and after the generation of the plasma.
  • a potential calculating means for calculating the potential of the above.
  • the electrostatic chuck When a workpiece is placed on the electrostatic chuck, a capacitance is formed between the workpiece and the electrostatic chuck. When the potential of the workpiece changes, the amount of electric charge accumulated in the electrostatic chuck Fluctuates via this capacitance.
  • the electric charge stored in the electrostatic chuck is supplied through a line of a DC voltage source. Therefore, for example, by measuring the current flowing through this line, the amount of charge accumulated in the electrostatic chuck can be easily calculated. Therefore, even when it is difficult to directly measure the potential of the object to be processed, the potential of the object in the plasma can be simply calculated by calculating the variation in the amount of charge accumulated in the electrostatic chuck. It can be obtained with high accuracy by the configuration.
  • control means for controlling the DC voltage source based on the potential of the object to be processed calculated by the potential calculation means.
  • the present invention provides a step of adsorbing an object to be processed on an electrostatic chuck; a step of generating plasma on the object to be processed; Calculation And a step of calculating an electric potential of the object to be processed based on the fluctuation of the calculated electric charge amount.
  • the potential of the target object can be easily obtained.
  • the present invention is characterized in that the change in the charge amount is calculated based on an integration result of a pulse current flowing in a DC voltage source connected to the electrostatic chuck.
  • the present invention is characterized in that the method further comprises a step of controlling a DC voltage applied to the electrostatic chuck based on the calculated potential of the object to be processed.
  • FIG. 1 is a sectional view showing a schematic configuration of a plasma processing apparatus according to one embodiment of the present invention.
  • FIG. 2 is a diagram showing a potential change of each part before and after generation of plasma in the plasma processing apparatus according to one embodiment of the present invention.
  • FIG. 3 is a waveform diagram showing a change in the DC power supply current of the plasma processing apparatus according to one embodiment of the present invention, and FIG. 3 (a) shows a waveform of one entire process.
  • FIG. 3 (b) is an enlarged view of portion B of FIG. 3 (a).
  • FIG. 1 is a sectional view showing a schematic configuration of a plasma processing apparatus according to one embodiment of the present invention.
  • a magnetron R IE will be described as an example of a plasma processing apparatus.
  • an upper electrode 2 and a susceptor 3 are provided in a processing chamber 1.
  • This susceptor 3 also serves as the lower electrode.
  • the upper electrode 2 is provided with a plurality of gas ejection holes 2 a for introducing a processing gas into the processing chamber 1.
  • the susceptor 3 is supported on a susceptor 4, and the susceptor 4 is held in the processing chamber 1 via an insulating plate 5.
  • High frequency power supply RF is connected to susceptor 3 via capacitor C1. Then, by turning on the high-frequency power supply RF, a plasma P is generated in the processing chamber 1 (also, a resistor R 1 is connected to the line of the high-frequency power supply RF, and the voltage V pp across the resistor R 1 is applied. By measuring, the voltage of susceptor 3 can be measured.
  • the processing chamber 1 is provided with a gas supply pipe 1a and an exhaust pipe 1b, and the gas supply pipe la is connected to a gas supply source (not shown). Further, the exhaust pipe 1b is connected to a vacuum pump (not shown), and the pressure in the processing chamber 1 can be adjusted by evacuating the processing chamber 1 with the vacuum pump.
  • a horizontal magnetic field forming magnet 9 is provided around the processing chamber 1 to form a magnetic field in the processing chamber 1. This makes it possible to increase the density of the plasma and efficiently perform the etching.
  • An electrostatic chuck 6 is provided on the susceptor 3.
  • This electrostatic The hole 6 has, for example, a structure in which a C11 electrode 7 is sandwiched between polyimide films 8a and 8b.
  • a DC high voltage power supply HV is connected to the Cii electrode 7 via a coil L and a resistor R2.
  • a Coulomb force acts on the wafer W, and the wafer W can be electrostatically attracted to the electrostatic chuck 6.
  • the coil L and the resistor R2 block high frequency components from the high frequency power supply RF. Therefore, the high-frequency component from the high-frequency power supply RF is not transmitted to the DC high-voltage power supply HV.
  • the line of the DC high-voltage power supply HV is provided with charge amount calculation means 11.
  • the charge amount calculating means 11 calculates the amount of charge stored in the electrostatic chuck 6.
  • the wafer potential calculation means 12 calculates the potential of the wafer W based on the change in the charge amount calculated by the charge amount calculation means 11.
  • control means 13 controls the DC high-voltage power supply HV based on the potential of the wafer W calculated by the wafer potential calculation means 12. That is, the DC voltage applied from the DC high-voltage power supply HV to the electrostatic chuck 6 is adjusted based on the potential of the wafer W.
  • the charge amount calculation means 11 can be configured using, for example, an ammeter A for measuring the current Id and a charge meter 10 for calculating the charge amount based on the current Id.
  • an ammeter A for measuring a current Id flowing through the DC high-voltage power supply HV is connected to the line of the DC high-voltage power supply HV.
  • the ammeter A is connected to a charge meter 10.
  • FIG. 2 is a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 3 (a) is a waveform diagram showing a change in DC power supply current of a plasma processing apparatus according to an embodiment of the present invention, and FIG. It is an enlarged view of B part of (a).
  • the current Id for inducing the charge Q0 corresponds to the pulse P1 generated when the DC high-voltage power supply HV is turned on, and the pulse P2 generated several seconds later.
  • the pulse P1 is a current flowing when the wafer W is floating from the electrostatic chuck 6.
  • the pulse P2 is a current flowing when the wafer W comes into contact with the electrostatic chuck 6.
  • the potential of the Cu electrode 7 remains at 1.5 kV, but since the wafer W is in an electrically floating state, The voltage Vdc is applied to the wafer W under the influence of the generated plasma P. Therefore, the voltage between the wafer W and the Cu electrode 7 changes from V0 to V0 + Vdc, and the amount of charge induced between the wafer W and the Cu electrode 7 changes.
  • the amount of change ⁇ Q of the charge induced between the wafer W and the Cu electrode 7 is
  • a current I d corresponding to the change amount ⁇ Q of the charge flows like a pulse.
  • This current Id corresponds to the pulse P3 generated when the high-frequency power supply RF is turned on. For this reason, the current Id corresponding to the pulse P3 is measured by the ammeter A connected to the line of the DC high-voltage power supply HV, and the amount of change ⁇ Q in the charge can be obtained by integrating this current Id. .
  • the electrostatic capacitance C between the wafer W and the Cu electrode 7 has a specific value, so that the voltage Vdc of the wafer W can be obtained from equation (1).
  • the charge stored in the electrostatic chuck 6 changes. For this reason, when the high-frequency power supply RF is turned on (the The voltage V dc of the wafer W can be determined by calculating the amount of change in the applied charge.
  • the electric charge stored in the electrostatic chuck 6 is supplied from the line of the DC high-voltage power supply HV, it can be easily calculated using the ammeter A provided in the DC high-voltage power supply HV. Therefore, even when it is difficult to directly measure the potential of the wafer W with a voltmeter, the voltage applied to the wafer W can be easily obtained.
  • control means 13 controls the voltage value applied to the electrostatic chuck 6 from the DC high-voltage power supply HV. This makes it possible to accurately control the energy of ions incident on the wafer W.
  • ammeter A an ammeter attached to the DC high-voltage power supply HV in advance can be used, and the voltage Vdc of the wafer W can be easily obtained at low cost.
  • a magnetron an IE device is used to generate plasma
  • any plasma processing device may be used, and the present invention may be applied to a plasma CVD device, an asshing device, or the like.
  • ECR Electrode Cyclotron Resonance
  • HEP Helicon Wave Excited Plasma
  • ICP Inductively Coupled Plasma
  • TCP Transfer Coupling Plasma
  • the wafer W has been described as an example of an object to be processed by the plasma processing apparatus, but the wafer W may be anything such as a semiconductor substrate or a glass substrate.
  • the present invention may be applied to a semiconductor device, a liquid crystal display device, an optical component, a CSP (chip size package) or a magnetic head.
  • the charge amount is obtained from the pulse current generated at that time, and based on the calculated charge amount, (C) The voltage Vdc of W can be calculated.
  • the charge amount may be obtained from the current of one of the lines of the DC high-voltage power supply.
  • the currents of both lines of the DC high-voltage power supply are monitored, and the charge amounts flowing through both lines are made equal.
  • the voltage of each DC high-voltage power supply may be adjusted.
  • the plasma processing apparatus and the plasma processing method according to the present invention can be used in a semiconductor manufacturing industry or the like that manufactures semiconductor devices. Therefore, it has industrial applicability.

Abstract

Selon cette invention, le courant Id passant à travers une ligne d'alimentation (HV) à haute tension en courant continu lorsque une alimentation à haute fréquence (RF) est mise en marche, est mesuré et intégré de manière à déterminer le changement de la charge ΔQ. La tension Vdc de la plaquette (W) est déterminée à partir du changement de la charge ΔQ. Ainsi, le potentiel électrique d'un travail dans un plasma est déterminé de façon précise à l'aide d'une structure simple.
PCT/JP2002/000311 2001-01-25 2002-01-18 Appareil de gravure par plasma et procede de gravure par plasma WO2002059954A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002560185A JPWO2002059954A1 (ja) 2001-01-25 2002-01-18 プラズマ処理装置およびプラズマ処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001017015 2001-01-25
JP2001-17015 2001-01-25

Publications (1)

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WO2002059954A1 true WO2002059954A1 (fr) 2002-08-01

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010008006A1 (fr) * 2008-07-16 2010-01-21 住友重機械工業株式会社 Appareil de traitement par plasma et procédé de traitement par plasma
JP2012138581A (ja) * 2012-01-10 2012-07-19 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017016858A (ja) * 2015-06-30 2017-01-19 ダイハツ工業株式会社 プラズマリアクタの印加電圧制御装置
US11284500B2 (en) 2018-05-10 2022-03-22 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224286A (ja) * 1993-01-26 1994-08-12 Hitachi Ltd 静電吸着装置の吸着モニター装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224286A (ja) * 1993-01-26 1994-08-12 Hitachi Ltd 静電吸着装置の吸着モニター装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010008006A1 (ja) * 2008-07-16 2012-01-05 住友重機械工業株式会社 プラズマ処理装置およびプラズマ処理方法
US8366833B2 (en) 2008-07-16 2013-02-05 Sumitomo Heavy Industries Plasma processing apparatus and plasma processing method
JP5574962B2 (ja) * 2008-07-16 2014-08-20 住友重機械工業株式会社 プラズマ処理装置およびプラズマ処理方法
WO2010008006A1 (fr) * 2008-07-16 2010-01-21 住友重機械工業株式会社 Appareil de traitement par plasma et procédé de traitement par plasma
JP2012138581A (ja) * 2012-01-10 2012-07-19 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2017016858A (ja) * 2015-06-30 2017-01-19 ダイハツ工業株式会社 プラズマリアクタの印加電圧制御装置
US11284500B2 (en) 2018-05-10 2022-03-22 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11699572B2 (en) 2019-01-22 2023-07-11 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11776789B2 (en) 2020-07-31 2023-10-03 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11887813B2 (en) 2021-06-23 2024-01-30 Applied Materials, Inc. Pulsed voltage source for plasma processing
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing

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