TW201832620A - 在電漿反應器中用於可調節工件偏壓之系統 - Google Patents
在電漿反應器中用於可調節工件偏壓之系統 Download PDFInfo
- Publication number
- TW201832620A TW201832620A TW107103368A TW107103368A TW201832620A TW 201832620 A TW201832620 A TW 201832620A TW 107103368 A TW107103368 A TW 107103368A TW 107103368 A TW107103368 A TW 107103368A TW 201832620 A TW201832620 A TW 201832620A
- Authority
- TW
- Taiwan
- Prior art keywords
- pulse
- workpiece
- voltage source
- pulse voltage
- source
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000009826 distribution Methods 0.000 claims abstract description 32
- 238000012545 processing Methods 0.000 claims abstract description 13
- 230000004907 flux Effects 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 abstract description 71
- 235000012431 wafers Nutrition 0.000 description 36
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 125000004122 cyclic group Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013501 data transformation Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32045—Circuits specially adapted for controlling the glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/424,405 | 2017-02-03 | ||
| US15/424,405 US10373804B2 (en) | 2017-02-03 | 2017-02-03 | System for tunable workpiece biasing in a plasma reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201832620A true TW201832620A (zh) | 2018-09-01 |
Family
ID=63037325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107103368A TW201832620A (zh) | 2017-02-03 | 2018-01-31 | 在電漿反應器中用於可調節工件偏壓之系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10373804B2 (enExample) |
| JP (1) | JP2020507678A (enExample) |
| KR (1) | KR20190105243A (enExample) |
| CN (1) | CN110249407A (enExample) |
| TW (1) | TW201832620A (enExample) |
| WO (1) | WO2018144374A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11955314B2 (en) | 2019-01-09 | 2024-04-09 | Tokyo Electron Limited | Plasma processing apparatus |
| TWI868096B (zh) * | 2019-01-09 | 2025-01-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
Families Citing this family (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US11539352B2 (en) | 2013-11-14 | 2022-12-27 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
| US10978955B2 (en) | 2014-02-28 | 2021-04-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| CN116633324A (zh) | 2013-11-14 | 2023-08-22 | 鹰港科技有限公司 | 高压纳秒脉冲发生器 |
| US10892140B2 (en) * | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| US10020800B2 (en) | 2013-11-14 | 2018-07-10 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser with variable pulse width and pulse repetition frequency |
| US10483089B2 (en) | 2014-02-28 | 2019-11-19 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
| US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
| US11824454B2 (en) * | 2016-06-21 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Wafer biasing in a plasma chamber |
| US10903047B2 (en) | 2018-07-27 | 2021-01-26 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| US10373804B2 (en) * | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
| EP3580841A4 (en) | 2017-02-07 | 2020-12-16 | Eagle Harbor Technologies, Inc. | TRANSFORMER-RESONANCE CONVERTER |
| JP6902167B2 (ja) | 2017-08-25 | 2021-07-14 | イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. | ナノ秒パルスを使用する任意波形の発生 |
| US20190088518A1 (en) * | 2017-09-20 | 2019-03-21 | Applied Materials, Inc. | Substrate support with cooled and conducting pins |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| CN111788655B (zh) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | 对等离子体处理的离子偏置电压的空间和时间控制 |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| KR102877884B1 (ko) | 2017-11-17 | 2025-11-04 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11302518B2 (en) | 2018-07-27 | 2022-04-12 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
| US11222767B2 (en) | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| US10607814B2 (en) | 2018-08-10 | 2020-03-31 | Eagle Harbor Technologies, Inc. | High voltage switch with isolated power |
| US11810761B2 (en) | 2018-07-27 | 2023-11-07 | Eagle Harbor Technologies, Inc. | Nanosecond pulser ADC system |
| US11532457B2 (en) | 2018-07-27 | 2022-12-20 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| KR102499709B1 (ko) | 2018-08-10 | 2023-02-16 | 이글 하버 테크놀로지스, 인코포레이티드 | RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어 |
| US10991550B2 (en) * | 2018-09-04 | 2021-04-27 | Lam Research Corporation | Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system |
| US10703654B2 (en) * | 2018-11-07 | 2020-07-07 | Pear Labs Llc | Non-thermal multiple plasma gate devices |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| WO2021134000A1 (en) | 2019-12-24 | 2021-07-01 | Eagle Harbor Technologies, Inc. | Nanosecond pulser rf isolation for plasma systems |
| US12456604B2 (en) | 2019-12-24 | 2025-10-28 | Eagle Harbor Technologies, Inc. | Nanosecond pulser RF isolation for plasma systems |
| US10796887B2 (en) | 2019-01-08 | 2020-10-06 | Eagle Harbor Technologies, Inc. | Efficient nanosecond pulser with source and sink capability for plasma control applications |
| CN113228830B (zh) * | 2019-01-09 | 2024-10-01 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
| KR102744694B1 (ko) * | 2019-01-10 | 2024-12-19 | 삼성전자주식회사 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US11488796B2 (en) * | 2019-04-24 | 2022-11-01 | Applied Materials, Inc. | Thermal break for high-frequency antennae |
| NL2022999B1 (en) | 2019-04-24 | 2020-11-02 | Prodrive Tech Bv | Voltage waveform generator for plasma processing apparatuses |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス， プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| JP7474651B2 (ja) * | 2019-09-09 | 2024-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11043387B2 (en) | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| TWI778449B (zh) | 2019-11-15 | 2022-09-21 | 美商鷹港科技股份有限公司 | 高電壓脈衝電路 |
| CN110936596A (zh) * | 2019-12-27 | 2020-03-31 | 河南先途智能科技有限公司 | 低温等离子技术处理鞋材表面的工艺方法 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11967484B2 (en) | 2020-07-09 | 2024-04-23 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) * | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12142469B2 (en) * | 2021-10-21 | 2024-11-12 | Applied Materials, Inc. | Plasma processing chambers configured for tunable substrate and edge sheath control |
| US11664195B1 (en) | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11688588B1 (en) * | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US11824542B1 (en) | 2022-06-29 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Bipolar high voltage pulser |
| CN115159865B (zh) * | 2022-07-26 | 2023-05-09 | 艾瑞森表面技术（苏州）股份有限公司 | 一种防眩光的表面处理方法 |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US20240096594A1 (en) * | 2022-09-19 | 2024-03-21 | Adaptive Plasma Technology Corp. | System for etching with a plasma |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| KR20250084155A (ko) | 2022-09-29 | 2025-06-10 | 이글 하버 테크놀로지스, 인코포레이티드 | 고전압 플라즈마 제어 |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US11869747B1 (en) | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
| KR20240121029A (ko) | 2023-02-01 | 2024-08-08 | 삼성전자주식회사 | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| US20240347323A1 (en) * | 2023-04-14 | 2024-10-17 | Velvetch Llc | Composite stage for electron enhanced material processing |
| JP7508758B1 (ja) | 2024-02-08 | 2024-07-02 | 京都電機器株式会社 | プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4013271B2 (ja) * | 1997-01-16 | 2007-11-28 | 日新電機株式会社 | 物品表面処理方法及び装置 |
| US6287435B1 (en) * | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| JP2004531880A (ja) * | 2001-03-13 | 2004-10-14 | アプライド マテリアルズ インコーポレイテッド | 二重電極を有する基板の支持体 |
| US6597117B2 (en) * | 2001-11-30 | 2003-07-22 | Samsung Austin Semiconductor, L.P. | Plasma coil |
| JP4701691B2 (ja) * | 2004-11-29 | 2011-06-15 | 東京エレクトロン株式会社 | エッチング方法 |
| JP4753306B2 (ja) * | 2006-03-29 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7780864B2 (en) | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
| JP5224837B2 (ja) * | 2008-02-01 | 2013-07-03 | 株式会社東芝 | 基板のプラズマ処理装置及びプラズマ処理方法 |
| US8382999B2 (en) | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| JP5496568B2 (ja) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
| JP2012044045A (ja) * | 2010-08-20 | 2012-03-01 | Toshiba Corp | 制御装置、プラズマ処理装置、及び制御方法 |
| US8232193B2 (en) * | 2010-07-08 | 2012-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming Cu pillar capped by barrier layer |
| KR20120022251A (ko) * | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
| JP5172928B2 (ja) * | 2010-09-30 | 2013-03-27 | 株式会社東芝 | 基板処理方法および基板処理装置 |
| JP6212363B2 (ja) * | 2012-11-19 | 2017-10-11 | 太陽誘電ケミカルテクノロジー株式会社 | 構造体及びその製造方法 |
| US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
| JP5701958B2 (ja) * | 2013-10-15 | 2015-04-15 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR20160022458A (ko) | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
| US9536749B2 (en) * | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| JP6726856B2 (ja) * | 2015-07-17 | 2020-07-22 | パナソニックＩｐマネジメント株式会社 | 注意情報提示装置および注意情報提示方法 |
| KR102744988B1 (ko) * | 2015-11-16 | 2024-12-19 | 도쿄엘렉트론가부시키가이샤 | 제1 물질과 제2 물질을 가진 구조 패턴 층의 에칭 방법 |
| US9966231B2 (en) | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
| US10373804B2 (en) * | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
-
2017
- 2017-02-03 US US15/424,405 patent/US10373804B2/en active Active
-
2018
- 2018-01-29 JP JP2019542079A patent/JP2020507678A/ja active Pending
- 2018-01-29 CN CN201880009994.XA patent/CN110249407A/zh active Pending
- 2018-01-29 WO PCT/US2018/015688 patent/WO2018144374A1/en not_active Ceased
- 2018-01-29 KR KR1020197025615A patent/KR20190105243A/ko not_active Abandoned
- 2018-01-31 TW TW107103368A patent/TW201832620A/zh unknown
-
2019
- 2019-07-24 US US16/521,094 patent/US10923320B2/en active Active
-
2021
- 2021-01-08 US US17/144,973 patent/US20210134561A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11955314B2 (en) | 2019-01-09 | 2024-04-09 | Tokyo Electron Limited | Plasma processing apparatus |
| TWI868096B (zh) * | 2019-01-09 | 2025-01-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110249407A (zh) | 2019-09-17 |
| US20190348258A1 (en) | 2019-11-14 |
| US20210134561A1 (en) | 2021-05-06 |
| US10923320B2 (en) | 2021-02-16 |
| JP2020507678A (ja) | 2020-03-12 |
| US20180226225A1 (en) | 2018-08-09 |
| US10373804B2 (en) | 2019-08-06 |
| KR20190105243A (ko) | 2019-09-16 |
| WO2018144374A1 (en) | 2018-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201832620A (zh) | 在電漿反應器中用於可調節工件偏壓之系統 | |
| JP7432781B2 (ja) | プラズマ処理源および基板バイアスの同期パルス化 | |
| JP7714600B2 (ja) | プラズマ処理中に基板における電圧波形を制御するためのシステム及び方法 | |
| CN112701025B (zh) | 产生离子能量分布函数(iedf) | |
| US8974684B2 (en) | Synchronous embedded radio frequency pulsing for plasma etching | |
| CN106920729B (zh) | 一种均匀刻蚀基片的等离子体处理装置及方法 | |
| TWI867255B (zh) | 控制離子能量分佈函數(iedf)的寬度的方法 | |
| US20190319555A1 (en) | Electrostatic chuck, substrate processing apparatus, and substrate holding method | |
| JP7500718B2 (ja) | 基板の処理方法及び装置 | |
| WO2020001361A1 (zh) | 射频脉冲匹配方法及其装置、脉冲等离子体产生系统 | |
| CN109767967A (zh) | 基板处理方法和基板处理装置 | |
| US20190348260A1 (en) | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation | |
| JP2022520337A (ja) | 静電チャックのための方法およびツール | |
| TW201911363A (zh) | 偏壓調製方法、偏壓調製系統和電漿處理裝置 | |
| US11990319B2 (en) | Methods and apparatus for processing a substrate | |
| CN110896019A (zh) | 等离子体刻蚀设备及刻蚀方法 |