TW201832620A - 在電漿反應器中用於可調節工件偏壓之系統 - Google Patents

在電漿反應器中用於可調節工件偏壓之系統 Download PDF

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Publication number
TW201832620A
TW201832620A TW107103368A TW107103368A TW201832620A TW 201832620 A TW201832620 A TW 201832620A TW 107103368 A TW107103368 A TW 107103368A TW 107103368 A TW107103368 A TW 107103368A TW 201832620 A TW201832620 A TW 201832620A
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Taiwan
Prior art keywords
pulse
workpiece
voltage source
pulse voltage
source
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Application number
TW107103368A
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English (en)
Chinese (zh)
Inventor
特拉維斯 高
菲利浦亞倫 克勞司
雷歐尼德 朵夫
帕布 古柏羅吉
Original Assignee
美商應用材料股份有限公司
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Publication of TW201832620A publication Critical patent/TW201832620A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW107103368A 2017-02-03 2018-01-31 在電漿反應器中用於可調節工件偏壓之系統 TW201832620A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor

Publications (1)

Publication Number Publication Date
TW201832620A true TW201832620A (zh) 2018-09-01

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107103368A TW201832620A (zh) 2017-02-03 2018-01-31 在電漿反應器中用於可調節工件偏壓之系統

Country Status (6)

Country Link
US (3) US10373804B2 (enExample)
JP (1) JP2020507678A (enExample)
KR (1) KR20190105243A (enExample)
CN (1) CN110249407A (enExample)
TW (1) TW201832620A (enExample)
WO (1) WO2018144374A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
TWI868096B (zh) * 2019-01-09 2025-01-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923999B (zh) * 2019-01-09 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

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US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
TWI868096B (zh) * 2019-01-09 2025-01-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923999B (zh) * 2019-01-09 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

Also Published As

Publication number Publication date
CN110249407A (zh) 2019-09-17
US20190348258A1 (en) 2019-11-14
WO2018144374A1 (en) 2018-08-09
US10923320B2 (en) 2021-02-16
US20210134561A1 (en) 2021-05-06
US10373804B2 (en) 2019-08-06
US20180226225A1 (en) 2018-08-09
KR20190105243A (ko) 2019-09-16
JP2020507678A (ja) 2020-03-12

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