CN110249407A - 在等离子体反应器中用于可调节工件偏压的系统 - Google Patents

在等离子体反应器中用于可调节工件偏压的系统 Download PDF

Info

Publication number
CN110249407A
CN110249407A CN201880009994.XA CN201880009994A CN110249407A CN 110249407 A CN110249407 A CN 110249407A CN 201880009994 A CN201880009994 A CN 201880009994A CN 110249407 A CN110249407 A CN 110249407A
Authority
CN
China
Prior art keywords
pulse
voltage source
workpiece
voltage
pulse voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880009994.XA
Other languages
English (en)
Chinese (zh)
Inventor
T·高
P·A·克劳斯
L·多尔夫
P·古帕拉加
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN110249407A publication Critical patent/CN110249407A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201880009994.XA 2017-02-03 2018-01-29 在等离子体反应器中用于可调节工件偏压的系统 Pending CN110249407A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (1)

Publication Number Publication Date
CN110249407A true CN110249407A (zh) 2019-09-17

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880009994.XA Pending CN110249407A (zh) 2017-02-03 2018-01-29 在等离子体反应器中用于可调节工件偏压的系统

Country Status (6)

Country Link
US (3) US10373804B2 (enExample)
JP (1) JP2020507678A (enExample)
KR (1) KR20190105243A (enExample)
CN (1) CN110249407A (enExample)
TW (1) TW201832620A (enExample)
WO (1) WO2018144374A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110936596A (zh) * 2019-12-27 2020-03-31 河南先途智能科技有限公司 低温等离子技术处理鞋材表面的工艺方法
CN115159865A (zh) * 2022-07-26 2022-10-11 艾瑞森表面技术（苏州）股份有限公司 一种防眩光的表面处理方法
CN115868003A (zh) * 2021-06-28 2023-03-28 应用材料公司 用于基板处理的脉冲电压增压

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
CN116633324A (zh) 2013-11-14 2023-08-22 鹰港科技有限公司 高压纳秒脉冲发生器
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US20240048056A1 (en) * 2016-06-21 2024-02-08 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
EP4266579A3 (en) 2017-02-07 2023-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
KR102466195B1 (ko) 2017-08-25 2022-11-11 이글 하버 테크놀로지스, 인코포레이티드 나노초 펄스를 이용한 임의의 파형 발생
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
JP7235761B2 (ja) 2017-11-17 2023-03-08 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TWI872423B (zh) 2017-11-17 2025-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11302518B2 (en) * 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
WO2020033931A1 (en) 2018-08-10 2020-02-13 Eagle Harbor Technologies, Inc. Plasma sheath control for rf plasma reactors
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
US10703654B2 (en) * 2018-11-07 2020-07-07 Pear Labs Llc Non-thermal multiple plasma gate devices
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
WO2020146436A1 (en) 2019-01-08 2020-07-16 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
CN113228830B (zh) * 2019-01-09 2024-10-01 东京毅力科创株式会社 等离子体处理装置及等离子体处理方法
JP7406965B2 (ja) * 2019-01-09 2023-12-28 東京エレクトロン株式会社 プラズマ処理装置
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20250100790A (ko) * 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
NL2022999B1 (en) * 2019-04-24 2020-11-02 Prodrive Tech Bv Voltage waveform generator for plasma processing apparatuses
US11887812B2 (en) 2019-07-12 2024-01-30 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
US11043387B2 (en) 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
JP7285377B2 (ja) 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
JP7439302B2 (ja) 2020-05-12 2024-02-27 イーグル ハーバー テクノロジーズ，インク． 高周波ｒｆ発生器及びｄｃパルシング
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US20230130986A1 (en) * 2021-10-21 2023-04-27 Applied Materials, Inc. Plasma processing chambers configured for tunable substrate and edge sheath control
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US20240096594A1 (en) * 2022-09-19 2024-03-21 Adaptive Plasma Technology Corp. System for etching with a plasma
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
WO2024073582A2 (en) 2022-09-29 2024-04-04 Eagle Harbor Technologies, Inc. High voltage plasma control
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
KR20240121029A (ko) 2023-02-01 2024-08-08 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
US20240347323A1 (en) * 2023-04-14 2024-10-17 Velvetch Llc Composite stage for electron enhanced material processing
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application
US12683123B2 (en) 2023-12-11 2026-07-14 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma
JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法
KR102691602B1 (ko) * 2024-03-22 2024-08-05 브이엠 주식회사 기판 손상 감소 구조의 원자층 식각 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1425187A (zh) * 1999-11-18 2003-06-18 东京电子有限公司 离子化物理蒸汽沉积的方法和装置
US20070247074A1 (en) * 2006-04-24 2007-10-25 Alexander Paterson Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
CN101069272A (zh) * 2004-11-29 2007-11-07 东京毅力科创株式会社 蚀刻方法和蚀刻设备
US20130213935A1 (en) * 2009-08-07 2013-08-22 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US20160056017A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Plasma apparatus and method of operating the same
CN105702550A (zh) * 2014-12-15 2016-06-22 朗姆研究公司 通过rf脉冲形状进行离子能量控制

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
WO2002073654A1 (en) * 2001-03-13 2002-09-19 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
JP4753306B2 (ja) * 2006-03-29 2011-08-24 東京エレクトロン株式会社 プラズマ処理装置
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2012044045A (ja) * 2010-08-20 2012-03-01 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
US8232193B2 (en) * 2010-07-08 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming Cu pillar capped by barrier layer
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP6212363B2 (ja) * 2012-11-19 2017-10-11 太陽誘電ケミカルテクノロジー株式会社 構造体及びその製造方法
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
JP6726856B2 (ja) * 2015-07-17 2020-07-22 パナソニックＩｐマネジメント株式会社 注意情報提示装置および注意情報提示方法
KR102744988B1 (ko) * 2015-11-16 2024-12-19 도쿄엘렉트론가부시키가이샤 제1 물질과 제2 물질을 가진 구조 패턴 층의 에칭 방법
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1425187A (zh) * 1999-11-18 2003-06-18 东京电子有限公司 离子化物理蒸汽沉积的方法和装置
CN101069272A (zh) * 2004-11-29 2007-11-07 东京毅力科创株式会社 蚀刻方法和蚀刻设备
US20070247074A1 (en) * 2006-04-24 2007-10-25 Alexander Paterson Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US20130213935A1 (en) * 2009-08-07 2013-08-22 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US20160056017A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Plasma apparatus and method of operating the same
CN105702550A (zh) * 2014-12-15 2016-06-22 朗姆研究公司 通过rf脉冲形状进行离子能量控制

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110936596A (zh) * 2019-12-27 2020-03-31 河南先途智能科技有限公司 低温等离子技术处理鞋材表面的工艺方法
CN115868003A (zh) * 2021-06-28 2023-03-28 应用材料公司 用于基板处理的脉冲电压增压
CN115159865A (zh) * 2022-07-26 2022-10-11 艾瑞森表面技术（苏州）股份有限公司 一种防眩光的表面处理方法

Also Published As

Publication number Publication date
TW201832620A (zh) 2018-09-01
US20190348258A1 (en) 2019-11-14
WO2018144374A1 (en) 2018-08-09
US10923320B2 (en) 2021-02-16
US20210134561A1 (en) 2021-05-06
US10373804B2 (en) 2019-08-06
US20180226225A1 (en) 2018-08-09
KR20190105243A (ko) 2019-09-16
JP2020507678A (ja) 2020-03-12

Similar Documents

Publication Publication Date Title
US10923320B2 (en) System for tunable workpiece biasing in a plasma reactor
JP7714600B2 (ja) プラズマ処理中に基板における電圧波形を制御するためのシステム及び方法
JP7432781B2 (ja) プラズマ処理源および基板バイアスの同期パルス化
TWI846014B (zh) 電壓脈衝的時域多工
TWI593010B (zh) 具有多重射頻功率之三極體反應器設計
US8974684B2 (en) Synchronous embedded radio frequency pulsing for plasma etching
JP7751740B2 (ja) プラズマリアクタ内の電極上のイオンエネルギー制御
US8404598B2 (en) Synchronized radio frequency pulsing for plasma etching
US11133759B2 (en) Electrostatic chuck, substrate processing apparatus, and substrate holding method
JP7500718B2 (ja) 基板の処理方法及び装置
CN102959675A (zh) 介电质基板的等离子体浸没离子植入的控制装置
JP2008135739A (ja) プラズマ放射分布の磁気コントロール増強のためのプラズマ閉じ込めバッフルおよび流量平衡器
CN118315271A (zh) 等离子体处理装置和系统
US20240347320A1 (en) Plasma processing apparatus, power system, control method, and storage medium
US11532456B2 (en) Inspection method, inspection apparatus, and plasma processing apparatus
CN106816396A (zh) 一种等离子体处理装置
US20190259626A1 (en) Etching method and plasma processing apparatus
CN109767967A (zh) 基板处理方法和基板处理装置
WO2018160554A1 (en) A method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
TW201911363A (zh) 偏壓調製方法、偏壓調製系統和電漿處理裝置
JPWO2013164940A1 (ja) 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置
US20250112040A1 (en) Thin film growth modulation using wafer bow
CN121002611A (zh) 脉冲电压辅助等离子体轰击
CN104347390B (zh) 一种等离子体刻蚀基片的方法
TW202329190A (zh) 用於處理基板的方法與設備

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190917

WD01 Invention patent application deemed withdrawn after publication