JP2020507479A - 高融点金属を切断する方法 - Google Patents
高融点金属を切断する方法 Download PDFInfo
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- 239000003870 refractory metal Substances 0.000 title claims abstract description 42
- 238000005520 cutting process Methods 0.000 claims abstract description 68
- 239000007787 solid Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000012530 fluid Substances 0.000 claims abstract description 13
- 239000010955 niobium Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 19
- 229910052758 niobium Inorganic materials 0.000 claims description 19
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- 239000002002 slurry Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 230000002829 reductive effect Effects 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 238000005554 pickling Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 125000003636 chemical group Chemical group 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 29
- 239000012535 impurity Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q11/00—Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling work; Safety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
- B23Q11/10—Arrangements for cooling or lubricating tools or work
- B23Q11/1038—Arrangements for cooling or lubricating tools or work using cutting liquids with special characteristics, e.g. flow rate, quality
- B23Q11/1061—Arrangements for cooling or lubricating tools or work using cutting liquids with special characteristics, e.g. flow rate, quality using cutting liquids with specially selected composition or state of aggregation
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/26—Anodisation of refractory metals or alloys based thereon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D57/00—Sawing machines or sawing devices not covered by one of the preceding groups B23D45/00 - B23D55/00
- B23D57/003—Sawing machines or sawing devices working with saw wires, characterised only by constructional features of particular parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D59/00—Accessories specially designed for sawing machines or sawing devices
- B23D59/02—Devices for lubricating or cooling circular saw blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D59/00—Accessories specially designed for sawing machines or sawing devices
- B23D59/04—Devices for lubricating or cooling straight or strap saw blades
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Manufacturing & Machinery (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Particle Accelerators (AREA)
- Sawing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
Description
Zr:O含有量:630μg/g H含有量:2μg/g
Ta:O含有量:9μg/g H含有量:1μg/g
Nb:O含有量:6μg/g H含有量:1μg/g
N含有量: 4...μg/g
O含有量: 35μg/g
C含有量: 1...2μg/g
H含有量: 40μg/g
RRR: 260
N含有量: 5...7μg/g
O含有量: 3...7μg/g
C含有量: 1...2μg/g
H含有量: 25μg/g
RRR: 340
N含有量: 11...13μg/g
O含有量: 7...18μg/g
C含有量: 1...2μg/g
H含有量: 1μg/g
RRR: 288...336
N含有量: 11...14μg/g
O含有量: 17...25μg/g
C含有量: 1...2μg/g
H含有量: 20...25μg/g
RRR: 220...290
2 電圧源
3 ボルトメータ
4 銅メッキワイヤ
5 偏向ローラ
6 スラリー
7 スラリー付き銅メッキワイヤ
Claims (15)
- 高融点金属を切断するための方法であって、高融点金属から構成される固体(1)を、切断装置(4、7)で機械的にかつ切削によって切断し、ここで、切断のための前記切断装置(4、7)を、少なくとも50質量%の水を有する流体(6)で湿潤させ、ここで、切断中の前記切断装置(4、7)を、前記固体(1)に対して正の電位に導く、方法。
- 前記固体(1)の切断面を、前記固体(1)に対する前記切断装置(4、7)の正の電位および前記水性流体(6)によって表面的に酸化させ、これによって、切断時に、酸化物層が前記切断面に形成され、ここで、好ましくは、非晶質酸化物層が前記切断面に形成されることを特徴とする、請求項1記載の方法。
- 切断時に形成された前記酸化物層によって、前記酸化物層を通る前記固体(1)の内部への水素および酸素の吸収は、減少または防止され、ここで、有利には、窒素および/または炭素および/または他のガスの前記酸化物層を通る前記固体(1)の内部への吸収も減少または防止されることを特徴とする、請求項2記載の方法。
- 前記切断装置(4、7)として、鋸装置の刃(4、7)を使用し、有利には、ワイヤソーのワイヤ(4、7)、スレッドソーのスレッド、バンドソーのバンド、弓鋸の鋸板、丸鋸の刃、またはカッティングディスクを使用し、ここで、特に好ましくは、前記ワイヤソーまたは前記スレッドソーを使用することを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 前記切断装置(4、7)として前記ワイヤソーのワイヤ(4、7)または前記スレッドソーのスレッドを使用し、前記流体(6)として水性のスラリー(6)を使用し、前記スラリー中に研磨粒子が分配されており、ここで、有利には、前記研磨粒子が、石英粒子、炭化タングステン粒子およびダイヤモンド粒子またはそれらの混合物から選択されることを特徴とする、請求項1から4までのいずれか1項記載の方法。
- 前記固体(1)が、結晶性、好ましくは、粗結晶性または単結晶性であることを特徴とする、請求項1から5までのいずれか1項記載の方法。
- 前記固体(1)と前記切断装置(4、7)との間で切断時に、少なくとも1Vの電圧、好ましくは5V〜200Vの電圧を印加することを特徴とする、請求項1から6までのいずれか1項記載の方法。
- 前記切断装置(4、7)を接地に対して電気的に正の電位にし、ここで、有利には、前記固体(1)を接地電位にすることを特徴とする、請求項1から7までのいずれか1項記載の方法。
- 前記固体(1)が化学主族IVb、VbもしくはVlbの高融点金属からなるか、または前記固体(1)がチタン、タンタル、ニオブ、バナジウム、ジルコニウム、モリブデンもしくはタングステンからなり、ここで、チタン、タンタル、ニオブおよびジルコニウムが特に好ましく、ニオブが非常に特に好ましいことを特徴とする、請求項1から8までのいずれか1項記載の方法。
- 前記固体(1)を切断時に前記水性流体(6)の浴中に置き、前記切断装置(4、7)を切断時に少なくとも部分的に前記浴に通すことを特徴とする、請求項1から9までのいずれか1項記載の方法。
- 切り離された前記ディスクの表面上の前記酸化物層を、切断後酸洗いによって除去することを特徴とする、請求項1から10までのいずれか1項記載の方法。
- 請求項1から11までのいずれか1項記載の方法で製造された高融点金属から構成されたディスク。
- 前記ディスクは、前記切断面上に2nm〜1000nm、有利には10nm〜500nmの厚さを有する酸化物層を有することを特徴とする、請求項1から10までのいずれか1項記載の方法で製造された高融点金属から構成されたディスク。
- 前記ディスクは、前記切断面上に非晶質酸化物層を有することを特徴とする、請求項13記載のディスク。
- 前記ディスクの内部が、20μg/g未満、有利には10μg/g未満の酸素含有量を有し、かつ/または前記ディスクの内部が、10μg/g未満、好ましくは3μg/g未満の水素含有量を有することを特徴とする、請求項12から14までのいずれか1項記載のディスク。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP17150817.9 | 2017-01-10 | ||
EP17150817.9A EP3346017B1 (de) | 2017-01-10 | 2017-01-10 | Verfahren zum schneiden von refraktärmetallen |
PCT/EP2017/079770 WO2018130327A1 (de) | 2017-01-10 | 2017-11-20 | Verfahren zum schneiden von refraktärmetallen |
Publications (2)
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JP2020507479A true JP2020507479A (ja) | 2020-03-12 |
JP7101682B2 JP7101682B2 (ja) | 2022-07-15 |
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US (1) | US11602816B2 (ja) |
EP (1) | EP3346017B1 (ja) |
JP (1) | JP7101682B2 (ja) |
CN (1) | CN110199041B (ja) |
WO (1) | WO2018130327A1 (ja) |
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US20200055157A1 (en) | 2020-02-20 |
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