JP2020505715A - 有機発光ダイオード(oled)アレイ基板及びその製造方法、表示装置 - Google Patents
有機発光ダイオード(oled)アレイ基板及びその製造方法、表示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 246
- 239000002346 layers by function Substances 0.000 claims abstract description 32
- 239000011368 organic material Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 80
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 60
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000005525 hole transport Effects 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 description 32
- 239000011651 chromium Substances 0.000 description 9
- 229910001069 Ti alloy Inorganic materials 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910001182 Mo alloy Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229910016525 CuMo Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- BVWCRASTPPDAAK-UHFFFAOYSA-N [Mo].[W].[Cu] Chemical compound [Mo].[W].[Cu] BVWCRASTPPDAAK-UHFFFAOYSA-N 0.000 description 2
- KUHMNNMMOVOJRH-UHFFFAOYSA-N [Ti].[Mo].[Cr] Chemical compound [Ti].[Mo].[Cr] KUHMNNMMOVOJRH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 2
- UMUXBDSQTCDPJZ-UHFFFAOYSA-N chromium titanium Chemical compound [Ti].[Cr] UMUXBDSQTCDPJZ-UHFFFAOYSA-N 0.000 description 2
- PCDGOLMIECCDAS-UHFFFAOYSA-N copper molybdenum niobium Chemical compound [Cu][Mo][Nb] PCDGOLMIECCDAS-UHFFFAOYSA-N 0.000 description 2
- BEDZDZCEOKSNMY-UHFFFAOYSA-N copper molybdenum titanium Chemical compound [Ti][Cu][Mo] BEDZDZCEOKSNMY-UHFFFAOYSA-N 0.000 description 2
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
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- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
(1)本開示の実施例における図面は本開示の実施例に係る構造に関するものに過ぎず、他の構造は通常の設計を参照してもよい。
102 駆動トランジスタ
103 第一電極
104 第二電極
105 有機材料機能層
106 補助電極
107a 遮光部
107b 遮光部
108 スイッチングトランジスタ
109 ビア構造
110 画素定義層
111 パッシベーション層
112 データ線
113 電源線
114 パッケージ層
115 第二絶縁層
116 ゲート線
1021 ゲート電極
1022 ソース電極
1023 ドレイン電極
1024 活性層
1025 ゲート絶縁層
1026 第一絶縁層
Claims (24)
- ベース基板と、
前記ベース基板に設置される駆動トランジスタ、第一電極、第二電極、有機材料機能層、及び前記第二電極に接続される補助電極とを備え、
前記有機材料機能層は前記第一電極と前記第二電極との間に位置し、
前記駆動トランジスタは、ゲート電極、ソース電極及びドレイン電極を備え、前記第一電極は前記ソース電極又は前記ドレイン電極と電気的に接続され、
前記補助電極は前記第一電極、前記ゲート電極及び前記ドレイン電極のうちの少なくとも1つと同層に設置される有機発光ダイオード(OLED)アレイ基板。 - 前記補助電極は前記第一電極及び前記ゲート電極と同層に設置される、請求項1に記載のOLEDアレイ基板。
- 前記補助電極は前記第一電極及び前記ドレイン電極と同層に設置される、請求項1に記載のOLEDアレイ基板。
- 前記補助電極は前記ゲート電極及び前記ドレイン電極と同層に設置される、請求項1に記載のOLEDアレイ基板。
- 前記補助電極は前記第一電極、前記ゲート電極及び前記ドレイン電極と同層に設置される、請求項1に記載のOLEDアレイ基板。
- 前記第二電極と前記補助電極との間に設置される絶縁構造をさらに備え、
前記絶縁構造に複数のビア構造が設置され、前記第二電極は前記複数のビア構造によって前記補助電極と接続される、請求項1から5のいずれか一項に記載のOLEDアレイ基板。 - 前記ベース基板における前記第二電極の正射影は、前記ベース基板における前記補助電極の正射影と少なくとも部分的に重なる、請求項6に記載のOLEDアレイ基板。
- 前記第一電極は、第一金属導電層、透明導電層、又は第一金属導電層及び透明導電層で形成される積層構造を備え、前記第二電極は第二金属導電層を備える、請求項7に記載のOLEDアレイ基板。
- 前記第一金属導電層の厚さが40〜120nmであり、前記第二金属導電層の厚さが3〜30nmである、請求項8に記載のOLEDアレイ基板。
- 前記第一電極が陽極であり、前記第二電極が陰極であり、又は、前記第一電極が陰極であり、前記第二電極が陽極である、請求項1から9のいずれか一項に記載のOLEDアレイ基板。
- 遮光部をさらに備え、前記遮光部は前記第一電極と同層に同様な材料で設置され、前記遮光部は前記補助電極と一体構造である、請求項1から3及び5のいずれか一項に記載のOLEDアレイ基板。
- 遮光部をさらに備え、前記遮光部は前記第一電極と同層に同様な材料で設置され、前記遮光部は前記補助電極と相互に離間される、請求項1から3及び5のいずれか一項に記載のOLEDアレイ基板。
- 前記ベース基板における前記遮光部の正射影は、前記ベース基板における前記駆動トランジスタの正射影と重なる、請求項11又は12に記載のOLEDアレイ基板。
- スイッチングトランジスタをさらに備え、前記ベース基板における前記遮光部の正射影は、前記ベース基板における前記スイッチングトランジスタの正射影と重なる、請求項11又は12に記載のOLEDアレイ基板。
- 前記有機材料機能層は、発光層、電子注入層、電子輸送層、正孔注入層及び正孔輸送層を備える、請求項1から14のいずれか一項に記載のOLEDアレイ基板。
- 請求項1から15のいずれか一項に記載のOLEDアレイ基板を備える表示装置。
- ベース基板を提供することと、
前記ベース基板に駆動トランジスタ、第一電極、有機材料機能層、第二電極及び補助電極を形成することとを含み、
前記有機材料機能層は前記第一電極と前記第二電極との間に形成され、
前記駆動トランジスタは、ゲート電極、ソース電極及びドレイン電極を備え、前記第一電極が前記ドレイン電極と電気的に接続され、
前記補助電極は、前記第一電極、前記ゲート電極及び前記ドレイン電極のうちの少なくとも1つと同じパターニングプロセスで形成される有機発光ダイオード(OLED)アレイ基板の製造方法。 - 前記補助電極は二層構造であり、前記補助電極の第一層と前記第一電極が、単一マスク及び単一材料で製造して形成され、前記補助電極の第二層と前記ゲート電極が、単一マスク及び単一材料で製造して形成される、請求項17に記載の製造方法。
- 前記補助電極は二層構造であり、前記補助電極の第一層と前記第一電極が、単一マスク及び単一材料で製造して形成され、前記補助電極の第二層と前記ドレイン電極が、単一マスク及び単一材料で製造して形成される、請求項17に記載の製造方法。
- 前記補助電極は二層構造であり、前記補助電極の第一層と前記ゲート電極が、単一マスク及び単一材料で製造して形成され、前記補助電極の第二層と前記ドレイン電極が、単一マスク及び単一材料で製造して形成される、請求項17に記載の製造方法。
- 前記補助電極は三層構造であり、前記補助電極の第一層と前記第一電極が、単一マスク及び単一材料で製造して形成され、前記補助電極の第二層と前記ゲート電極が、単一マスク及び単一材料で製造して形成され、前記補助電極の第三層と前記ドレイン電極が、単一マスク及び単一材料で製造して形成される、請求項17に記載の製造方法。
- 前記第二電極と前記補助電極との間に絶縁構造を形成し、前記絶縁構造に複数のビア構造を形成することをさらに含み、
前記第二電極は前記複数のビア構造によって前記補助電極と接続される、請求項17から21のいずれか一項に記載の製造方法。 - 前記第一電極は、第一金属導電層、透明導電層、又は第一金属導電層及び透明導電層で形成される積層構造を備え、前記第二電極は第二金属導電層を備える、請求項22に記載の製造方法。
- 前記第一金属導電層の厚さが40〜120nmであり、前記第二金属導電層の厚さが3〜30nmである、請求項23に記載の製造方法。
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