JP2020502820A - ドライエッチング装置及びその制御方法 - Google Patents
ドライエッチング装置及びその制御方法 Download PDFInfo
- Publication number
- JP2020502820A JP2020502820A JP2019543151A JP2019543151A JP2020502820A JP 2020502820 A JP2020502820 A JP 2020502820A JP 2019543151 A JP2019543151 A JP 2019543151A JP 2019543151 A JP2019543151 A JP 2019543151A JP 2020502820 A JP2020502820 A JP 2020502820A
- Authority
- JP
- Japan
- Prior art keywords
- unit
- cathode
- anode
- voltage power
- work object
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000001312 dry etching Methods 0.000 title claims abstract description 36
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 7
- 239000000615 nonconductor Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 230000005596 ionic collisions Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (12)
- アノード部と、
前記アノード部の上方に前記アノード部と向かい合うように配置され、時間に応じて電圧の極性が正の電圧と負の電圧を交互する双方向電圧電源が印加され、前記アノード部と離隔するように配置されるカソード部と、
前記カソード部のアノード部と向かい合う面に密着するように位置し、作業対象物を平らな状態に位置させる扁平部と、
前記カソード部のアノード部と向かい合う面に作業対象物と扁平部を固定させる据置部と、
前記カソード部に前記双方向電圧電源を印加する双方向電圧電源供給部と、を含む、ドライエッチング装置。 - 前記扁平部は、前記カソード部のアノード部と向かい合う面に密着し、その背面に作業対象物が平らな状態で密着するように付着するフラットプレートを含む、請求項1に記載のドライエッチング装置。
- 前記扁平部は、前記作業対象物が付着したフラットプレートと作業対象物の表面の周りに形成されるフォトレジストフィルムをさらに含む、請求項2に記載のドライエッチング装置。
- 前記扁平部は、前記フラットプレートと作業対象物との間に形成され、前記作業対象物を前記フラットプレートに付着させるための接着層をさらに含む、請求項2に記載のドライエッチング装置。
- 前記接着層が接着物質である、請求項4に記載のドライエッチング装置。
- 前記作業対象物は、前記フラットプレートに静電気を用いて付着する、請求項2に記載のドライエッチング装置。
- 前記作業対象物とフォトレジストフィルムとの間に積層され、半導体または不導体を含む材質からなる挿入層をさらに含む、請求項2に記載のドライエッチング装置。
- 前記据置部は、前記作業対象物及びフォトレジストフィルムが備えられたフラットプレートを、前記カソード部アノード部と向かい合う面に密着させるように、前記扁平部を弾性支持する、請求項1に記載のドライエッチング装置。
- 前記作業対象物へのイオン衝突(hitting)時間は減らし、電子の衝突(hitting)時間は増えるように、前記アノード部に直流電圧電源を印加する直流電圧電源印加部をさらに含む、請求項1に記載のドライエッチング装置。
- 前記直流電圧電源印加部によって印加される電源は負の電圧または正の電圧である、請求項9に記載のドライエッチング装置。
- フラットプレートに作業対象物を付着させる付着段階と、
前記フラットプレートに付着した作業対象物及びフラットプレートにフォトレジストフィルムをラミネートするラミネート段階と、
前記ラミネート段階の後、ラミネートされたフォトレジストフィルムに露光を施してパターンを形成する露光段階と、
前記露光段階で露光が行われた状態のフォトレジストフィルム、作業対象物及びフラットプレートを、カソード部のアノード部と向かい合う面に密着するように装着する装着段階と、
前記カソード部に時間に応じて電圧の極性が正の電圧と負の電圧を交互して電源を印加させる双方向電圧電源印加段階と、
前記カソード部に印加された双方向電圧電源により発生したプラズマによって作業対象物の表面にエッチングが行われるエッチング段階と、を含んでなる、ドライエッチング装置の制御方法。 - 前記双方向電圧電源印加段階の後または同時に、前記アノード部に直流電圧電源を印加する直流電圧電源印加段階をさらに含む、請求項11に記載のドライエッチング装置の制御方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0137827 | 2016-10-21 | ||
KR1020160137827A KR101913684B1 (ko) | 2016-10-21 | 2016-10-21 | 건식 에칭장치 및 그 제어방법 |
PCT/KR2017/011294 WO2018074780A1 (ko) | 2016-10-21 | 2017-10-13 | 건식 에칭장치 및 그 제어방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020502820A true JP2020502820A (ja) | 2020-01-23 |
JP6898456B2 JP6898456B2 (ja) | 2021-07-07 |
Family
ID=62019085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019543151A Active JP6898456B2 (ja) | 2016-10-21 | 2017-10-13 | ドライエッチング装置及びその制御方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11348810B2 (ja) |
JP (1) | JP6898456B2 (ja) |
KR (1) | KR101913684B1 (ja) |
CN (1) | CN109891557B (ja) |
WO (1) | WO2018074780A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102419550B1 (ko) * | 2020-09-03 | 2022-07-11 | 주식회사 볼트크리에이션 | 수평 설치형 건식 에칭장치 |
KR102518437B1 (ko) * | 2020-11-19 | 2023-04-05 | 주식회사 볼트크리에이션 | Metal의 Micro-patterning을 이용한 패러데이 케이지 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120173A (ja) * | 1992-10-09 | 1994-04-28 | Fujitsu Ltd | エッチング終点検出方法 |
JPH07292473A (ja) * | 1995-01-30 | 1995-11-07 | Hitachi Ltd | 低圧雰囲気内の処理方法及びその装置 |
JP2005268436A (ja) * | 2004-03-17 | 2005-09-29 | Sharp Corp | 半導体装置製造方法およびドライエッチング装置 |
JP2009239222A (ja) * | 2008-03-28 | 2009-10-15 | Tokyo Electron Ltd | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60126832A (ja) * | 1983-12-14 | 1985-07-06 | Hitachi Ltd | ドライエツチング方法および装置 |
JPS63238288A (ja) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | ドライエツチング方法 |
JPH08134666A (ja) | 1994-11-10 | 1996-05-28 | Mitsui Toatsu Chem Inc | ドライエッチング方法 |
US6245189B1 (en) * | 1994-12-05 | 2001-06-12 | Nordson Corporation | High Throughput plasma treatment system |
EP1441577A4 (en) * | 2002-02-20 | 2008-08-20 | Matsushita Electric Works Ltd | PLASMA PROCESSING DEVICE AND METHOD |
US7951262B2 (en) * | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7169248B1 (en) * | 2005-07-19 | 2007-01-30 | Micron Technology, Inc. | Methods for releasably attaching support members to microfeature workpieces and microfeature assemblies formed using such methods |
JP2008028022A (ja) * | 2006-07-19 | 2008-02-07 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
KR101515150B1 (ko) | 2008-04-07 | 2015-04-27 | 참엔지니어링(주) | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US8373086B2 (en) * | 2008-04-07 | 2013-02-12 | Charm Engineering Co., Ltd. | Plasma processing apparatus and method for plasma processing |
JP2012004160A (ja) * | 2010-06-14 | 2012-01-05 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
EP2407998B1 (en) * | 2010-07-15 | 2019-02-13 | Ecole Polytechnique | Plasma processing in a capacitively-coupled reactor with trapezoidal-waveform excitation |
WO2013046640A1 (ja) | 2011-09-26 | 2013-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
EP2951860B1 (en) * | 2013-01-31 | 2020-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Carrier substrate and method for fixing a substrate structure |
US20140263182A1 (en) | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Dc pulse etcher |
US9209033B2 (en) * | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
-
2016
- 2016-10-21 KR KR1020160137827A patent/KR101913684B1/ko active IP Right Grant
-
2017
- 2017-10-13 JP JP2019543151A patent/JP6898456B2/ja active Active
- 2017-10-13 CN CN201780063840.4A patent/CN109891557B/zh active Active
- 2017-10-13 WO PCT/KR2017/011294 patent/WO2018074780A1/ko active Application Filing
- 2017-10-13 US US16/343,591 patent/US11348810B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120173A (ja) * | 1992-10-09 | 1994-04-28 | Fujitsu Ltd | エッチング終点検出方法 |
JPH07292473A (ja) * | 1995-01-30 | 1995-11-07 | Hitachi Ltd | 低圧雰囲気内の処理方法及びその装置 |
JP2005268436A (ja) * | 2004-03-17 | 2005-09-29 | Sharp Corp | 半導体装置製造方法およびドライエッチング装置 |
JP2009239222A (ja) * | 2008-03-28 | 2009-10-15 | Tokyo Electron Ltd | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
Also Published As
Publication number | Publication date |
---|---|
KR20180044124A (ko) | 2018-05-02 |
US11348810B2 (en) | 2022-05-31 |
CN109891557B (zh) | 2023-06-20 |
WO2018074780A1 (ko) | 2018-04-26 |
CN109891557A (zh) | 2019-06-14 |
KR101913684B1 (ko) | 2018-11-01 |
US20190318942A1 (en) | 2019-10-17 |
JP6898456B2 (ja) | 2021-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4431402B2 (ja) | プラズマエッチング方法 | |
JP2019529695A (ja) | 高密度、低応力のアモルファスカーボン膜、ならびにその堆積のための方法および装置 | |
US20050039773A1 (en) | Particle removal apparatus and method and plasma processing apparatus | |
US4798650A (en) | Method of dry etching aluminum | |
JP2010238980A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JPH0365013B2 (ja) | ||
JP5710318B2 (ja) | プラズマ処理装置 | |
JP2012015162A (ja) | 誘電体の厚さ設定方法、及び電極に設けられた誘電体を備える基板処理装置 | |
JP2020502820A (ja) | ドライエッチング装置及びその制御方法 | |
KR101853167B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
CN109075107B (zh) | 干式蚀刻装置 | |
JP2898635B2 (ja) | 第2の電極のスパッタリングを減少させる方法および装置 | |
US20130203260A1 (en) | Etching method and etching apparatus | |
JPH06302678A (ja) | 静電チャック | |
JP4566373B2 (ja) | 酸化膜エッチング方法 | |
KR102419550B1 (ko) | 수평 설치형 건식 에칭장치 | |
JP5373903B2 (ja) | 成膜装置 | |
CN109075062B (zh) | 干式蚀刻装置的控制方法 | |
JP2006093269A (ja) | エッチング方法 | |
JP2011124295A (ja) | プラズマ処理装置 | |
JPH04346225A (ja) | マグネトロンプラズマエッチング方法及び装置 | |
JPS6182434A (ja) | プラズマ処理装置 | |
JP2005044877A (ja) | レジスト塗布装置、レジスト塗布方法及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190422 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191120 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200625 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200630 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20201027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210218 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20210218 |
|
C11 | Written invitation by the commissioner to file amendments |
Free format text: JAPANESE INTERMEDIATE CODE: C11 Effective date: 20210302 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20210428 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20210511 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210601 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6898456 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |