CN109075062B - 干式蚀刻装置的控制方法 - Google Patents
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- 238000001312 dry etching Methods 0.000 title claims abstract description 41
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- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims description 27
- 230000002457 bidirectional effect Effects 0.000 claims description 21
- 239000012212 insulator Substances 0.000 claims description 20
- 230000001276 controlling effect Effects 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000012423 maintenance Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
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- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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Abstract
与材质无关地能够适用的干式蚀刻装置的控制方法。本发明的一实施例公开的干式蚀刻装置的控制方法包括:将加工对象物紧贴于所述阴极部的下侧面的加工对象物放置步骤;将随着时间而极性为阳的电压和阴的电压交替的电压施加给阴极部的双向电压电源施加步骤;利用在施加于所述阴极部的双向电压电源的作用下产生的等离子而对加工对象物进行蚀刻的蚀刻步骤。
Description
技术领域
本发明涉及干式蚀刻装置的控制方法,更加具体地,涉及与材质无关地能够适用的干式蚀刻装置的控制方法。
背景技术
半导体等各种材料或产品的加工工序中采用有蚀刻工艺。
这种蚀刻工艺为将加工对象物的表面的一部分蚀刻掉的工艺,一般采用使用化学方法的湿式(wet)蚀刻法。
最近,对各种材质采用蚀刻工艺,但这种湿式蚀刻工艺在适用对象方面存在限度。
于是,最近提出有非湿式蚀刻法的干式(dry)蚀刻法。
图1为用于说明采用这种干式蚀刻法而对半导体的铜(Cu)进行蚀刻的过程的图。
首先,对硅材10上沉积了硬掩膜(hard mask)20的加工对象物实施平板印刷(lithography)过程之后,对所述硬掩膜20实施干式蚀刻而完成蚀刻。
然后,除去在上述的平板印刷过程中涂覆的光刻胶(PR:30)膜等之后,在真空室内沉积铜(Cu)膜42。
然后,在所沉积的铜膜42之上用电镀(electro-plating)法沉积铜(Cu)44之后,将位于硬掩膜20之上的铜用化学机械研磨(CMP,Chemical Mechanical Polishing)法除去。
但是,这种现有的干式蚀刻法存在由于包括化学工艺而加工过程长,而且只有少数的挥发性物质才能适用于干式蚀刻法而无法将多种多样的材质适用于干式蚀刻法的问题。
发明内容
(发明所要解决的问题)
本发明是为了解决上述的现有问题而创作的,本发明所要解决的课题为提供一种不依赖于化学工艺,并能够适用于多种多样的材质的干式蚀刻装置及其控制方法。
本发明的课题并不限于上面所提及的课题,关于未提及的其他的课题,本领域的普通技术人员根据本说明书的具体内容能够清楚地理解。
(解决问题所采用的措施)
为了解决上述的课题,本发明的一实施例公开的干式蚀刻装置的控制方法包括:将加工对象物紧贴于所述阴极部的下侧面的加工对象物放置步骤;将随着时间而极性为阳的电压和阴的电压交替的电压施加给阴极部的双向电压电源施加步骤;利用在施加于所述阴极部的双向电压电源的作用下产生的等离子而对加工对象物进行蚀刻的蚀刻步骤。
所述加工对象物被放置成欲蚀刻的面朝向下侧。
施加于所述阴极部的低频交流电源的频率低于1MHz。
所述加工对象物放置步骤和双向电压电源施加步骤之间,进一步包括调节阴极部和阳极部之间的距离的距离调节步骤。
被所述间隔调节部调节的所述阴极部和阳极部之间的距离为3mm~50mm。
所述双向电压电源施加步骤之后或同时,进一步包括给所述阳极部施加直流电压电源的直流电压电源施加步骤。
在所述直流电压电源施加步骤中给所述阳极部施加的直流电压是,在所述双向电压步骤中给所述阴极部施加的交流电压的最大电压的1~200%。
进一步包括用于控制所述阴极部的温度的温度控制步骤。
(发明的效果)
根据本发明的干式蚀刻装置的控制方法,蚀刻加工时间与现有技术相比显著减少,从而提高了生产性,能够在不受材质的制约下进行干式蚀刻,从能够对多种多样的材质及产品进行干式蚀刻,不发生再沉积(redeposition),从而被时刻部分能够形成为没有再沉积物或污染而整洁。
本发明的效果并不限于上面所提及的效果,关于未提及的其他的效果,本领域的普通技术人员根据本说明书的具体内容能够清楚地理解。
附图说明
图1为示出利用现有的干式蚀刻法而在半导体上形成铜层的过程的图。
图2为示出本发明的一实施例的干式蚀刻装置的截面图。
图3为示出本发明的另一实施例的干式蚀刻装置的截面图。
图4为示出在等离子蚀刻过程中被蚀刻的原子a在等离子或气体e的作用下弹回(rebound)而再沉积(re-deposition)的景象的图。
图5为示出双向电压电源表现出交流形态的波形,并给阳极部施加直流电源时形成于阴极和阳极之间的双向电压电源的电压波形变化的图表。
图6为示出给阳极部施加直流电源时被蚀刻的原子a的运动景象的图。
图7为示出本发明的一实施例的干式蚀刻装置的控制方法的流程图。
图8为示出利用本发明的一实施例的干式蚀刻装置及其控制方法而在半导体上形成铜膜过程的图。
图9为利用现有的湿式蚀刻方法和本发明的一实施例的干式蚀刻装置及其控制方法而被蚀刻部分的景象的图。
具体实施方式
参照附图而对能够具体实现本发明的目的的本发明的优选实施例。在本实施例的说明过程中,对相同的结构使用相同的名称及相同的附图标记,并省略对其的说明。
与在背景技术中介绍的现有的干式蚀刻法相比,为了突破材质的限度,本申请人关注到了高能离子源需要更加强劲地撞击加工对象物,并且根据加工对象物而加工温度不同,而且设定加工温度时需要以加工对象物的加工过程中的加工温度的偏差较小地维持的点。作为一个例子,为了防止光刻胶(PR)被固化的情况,加工对象物的温度超过80℃。此外,能够抑制因加工对象物的加工过程中的加工温度的偏差而引起的蚀刻收率的偏差的产生,而且能够实现一部分加工对象物材料的温度的上限或下限的设定等的多种多样的加工温度框架(profile)的设定控制。
另一方面,本申请人着眼于等离子的鞘区(Sheath Region)的扩大、高电压及1MHz以下的双向电压电源的使用、以及等离子密度的提高的概念,以使高能离子源以更高的动能撞击加工对象物。
此外,为了顺畅地进行加工对象物的温度控制,着眼于绝缘而不会给加工对象物施加电流的概念和给加工对象物所位于的阴极部追加温度控制功能的概念。此时,与加工对象物接触的绝缘物利用一体型涂装技术或者使用导热性优异的粘合材的粘合技术而与施加双向电压电源的部分接合,据此将所产生的热量迅速向冷却部释放而能够顺畅地进行温度的控制。
如图2所示,向这种方面着眼的本实施例的干式蚀刻装置100包括:阳极部120、阴极部110、载置部140、以及双向电压电源供给部130。
所述阳极部120和阴极部110在上下方向上相互分开而配置于附图中未示出的外壳(未图示)的内部。
所述外壳(未图示)在内部形成用于配置后述的各种构成要素的空间,并且该内部能够成为真空或往该内部注入氩气(Ar)等的气体,该外壳具有打开及关闭功能而能够对该内部进行加工对象物W的放入或取出。
此时,所述阴极部110配置于上侧,所述阳极部120配置于下侧。
此时,在下面的说明中,以重力方向为基准,重力所向的方向称之为下侧,与其相反的方向称之为上侧。
而且,所述双向电压电源供给部130给所述阴极部110施加双向电压的电源。
此时,所述双向电压的电源称之为随着时间而将极性为阳的电压和阴的电压双向交替的电流。
此外,所述双向电压的电源的频率为1MHz以下的频率。
如上所述,能够通过施加双向电压的电源的来使电荷积蓄时间变长,这对鞘区的扩大起到贡献。此外,因鞘区的扩大而能够确保离子向加工对象物侧加速的时间,从而能够用更高的能量撞击加工对象物W的表面。在后详细说明这种双向电压的电源。
另一方面,加工对象物W紧贴于所述阴极部110的面向于阳极部120的下侧面。
从而,对所述加工对象物W的下侧面进行蚀刻,据此蚀刻而从所述加工对象物W的表面脱落的原子在重力作用下向阳极部120侧掉落,从而能够防止脱落的原子再次沉积于加工对象物W的表面的再沉积(reseposition)现象。
所述载置部140为将所述加工对象物W紧贴于所述阴极部110的下侧面的构成要素。
此外,进一步包括用于调节所述阴极部110和阳极部120之间的距离的间隔调节部150。
通常,电荷量Q与所施加的电压V、电容率ε以及加工对象物的面积A成比例,与阴极部和阳极部之间的距离d成反比(Q=VεA/d)。
从而,通过间隔调节部150调节阴极部110和阳极部120之间的距离的来在对具有各种各样的面积A的各种加工对象物进行蚀刻时也能够以规定的或最佳的电荷量的状态进行加工。
这种间隔调节部150包括马达152、联结件154及支撑棒156。此时,支撑棒156采用绝缘材料,以使对阴极部110和阳极部120之间的等离子的影响最小。
所述马达152为产生旋转力的构成要素,在本实施例中,以能够精密调节旋转角度的步进马达为例进行说明。此外,所述步进马达由另外设置的控制部190控制。
所述联结件154在所述马达152的旋转力的作用下进行旋转,并沿着旋转中心轴形成有与所述中心旋转轴同轴的通孔,所述通孔的内周面形成有螺纹。此时,所述联结件154的旋转中心轴沿着上下方向形成。
而且,所述支撑棒156向上下方向延伸,并外周面形成有与所述联结件154的内周面啮合的螺纹,从而插入于所述联结件154的通孔的内周面而与其啮合,而且所述支撑棒156的上端支撑所述阴极部110。
从而,当所述马达152旋转时所述联结件154也旋转,据此,所述支撑棒156与马达152的旋转角度及联结件154的间距(pitch)相当的量进行升降,从而被所述支撑棒156的上端支撑的阴极部110也进行升降而调节所述阴极部110和阳极部120之间的距离。
此时,被所述间隔调节部150调节的所述阴极部110和阳极部120之间的距离为3mm~50mm之间。此外,为了加工对象物的外形形状和安装于治具及阴极部110的方式顺畅,间隔调节部150能够连接于与支撑在上端的阴极部110隔开的另外的其他支撑台(例如,真空室等)而使用。
所述载置部140为将加工对象物W弹性支撑而尽管所述阴极部110进行升降也能够使加工对象物W紧贴于所述阴极部110的下侧面的构成要素。
这样的载置部140包括第一部件144、第二部件146及弹簧148。
所述第一部件144形成为插入至设置于所述阳极部120的下侧的固定片142并能够沿上下方向移动,而且向上侧延伸。
此时,所述固定片142固定于所述外壳(未图示)。
而且,所述第二部件146形成于所述第一部件144的上端并具有比所述第一部件144更大的直径。而且,所述第二部件146的上端支撑所述加工对象物W而使其紧贴于所述阴极部110。此时,第二部件146采用绝缘材料,以使对阴极部110和阳极部120之间的等离子的影响最小。第二部件146根据加工对象物W的形状而能够具有圆形、四角形、多角形及圆锥形等的多种多样的形状。
而且,所述弹簧148包住所述第一部件144的外侧,下端被所述固定片142支撑且上端被第二部件146支撑而将所述第二部件144相对于所述固定片142弹性支撑。
从而,在所述弹簧148的作用下支撑在所述第二部件146的加工对象物W始终向上侧弹性支撑,因此即使所述阴极部110上升,加工对象物W也能够紧贴于阴极部110。此时,弹簧148采用绝缘材料,以使对阴极部110和阳极部120之间的等离子的影响最小。
另一方面,如图3所示,所述阳极部220的下侧设置有能够接地的基部222,所述基部222的上侧设置有阳极部220,而且所述基部222和阳极部220之间设置绝缘的第二阳极绝缘体224。
另一方面,如图4所示,蚀刻而从所述加工对象物W的表面脱落并向阳极部120侧掉落的原子a中的一部分遇到朝向所述加工对象物W的表面的离子i或等离子而与其撞击,从而再次朝向加工对象物W的表面而发生再沉积于加工对象物W的表面的再沉积(reseposition)现象。
为了防止这种现象,本实施例的干式蚀刻装置进一步包括直流电源施加部160,其将直流电压电源的直流的-侧或+侧施加给所述阳极部120,以使对所述加工对象物W的离子的撞击(hitting)时间变短,电子的撞击(hitting)时间变长。在本实施例中,以所述直流电压电源施加部160施加-侧的直流电压电源的情况为例而说明。
在说明所述直流电压电源施加部160所起到的作用之前,先说明从所述双向电压电源供给部提供至所述阴极部114的电压波形的形态。
如上所述,双向电压被称之为随着时间而电压的极性+和-交替的电流,由所述双向电压电源供给部130生成的双向电压的波形能够表现出如图5所示的通常的交流形态的正弦(sign)波形、或者梯形形态的双极(bipolar)波形。
即,在本发明中,所述双向电压电源为与波形的形态及大小无关地以电压为0的点为基准随着时间而电压的极性交替成+和-的电压。
另一方面,当所述双向电压的波形表现出梯形形态的双极(bipolar)波形时,电压的波形包括升压区间(U)和降压区间(D)。
此时,在所述电压的波形中,将向+或-侧发散的区间称之为升压区间(U),将向0收拢的区间称之为降压区间(D)。
此外,将在所述升压区间(U)和降压区间(D)维持规定的电压的区间称之为维持区间(D)。
根据从所述双向电压电源供给部提供的双向电压的波形,所述维持区间(D)有可能出现,也有可能不会出现。
此外,在所述双向电压电源供给部130中,由所述双向电压电源供给部130产生的双向电压电源的波形被控制部190控制。
所述控制部190能够由与所述双向电压电源供给部130连接的终端或电脑(PC)等构成。当然,本发明并不限于此,所述控制部190可为具备有输入单元、显示单元、演算单元以及通信单元的模组。
另一方面,当所述双向电压的波形表现出梯形形态的双极(bipolar)波形时,升压区间(U)、降压区间(D)及维持区间(D)的倾斜度及长度在所述控制部190的控制下被控制。
即,如图6所示,所述升压区间(U)和降压区间(D)的倾斜度对称,或者,如图7所示,所述升压区间(U)和降压区间(D)的倾斜度不同。或者,即使附图中未示出,但也能够调节所述维持区间(M)的长度,维持区间(M)被控制而除了峰值点以外,还能够以0Voltage状态出现。
这是根据所述加工对象物W所需的、撞击(hitting)电子(electron)的时间及强度和撞击(hitting)离子(ion)的时间及强度而由所述控制部190调节。
下面,说明所述直流电压电源施加部160所起到的作用。
图5为示出由所述双向电压电源供给部130生成的双向电压的波形为通常的交流形态的正弦(sign)波形,并给所述阳极部120施加直流时形成于阴极部110和阳极部120之间的双向电压电源的波形变化的图表。
如上所述,由所述双向电压电源供给部130生成的交流形态的所述双向电流的波形施加到所述阴极部110,因此如图5所示,形成于阴极部110和阳极部120之间的双向电流的波形成为交流形态的波形。
但是,如图5所示,所述直流电压电源施加部160给所述阳极部120施加直流的-侧的话,形成于阴极部110和阳极部120之间的交流形态的双向电压的波形向上侧移动。在图5的图表中,在交流波形向0Voltage下侧(-侧)下降的状态下,离子撞击加工对象物W,在交流波形向0Voltage上侧(+侧)上升的状态下,电子撞击加工对象物W。
或者,在由所述双向电压电源供给部130生成的所述双向电压电源的波形表现出梯形形态的双极(bipolar)波形的情况下,所述直流电压电源施加部160给所述阳极部120施加直流的-侧的话,形成于阴极部110和阳极部120之间的双极形态的双向电压的波形也能够向上侧移动。在图6的图表中,在交流波形向0Voltage下侧下降的状态下,离子撞击加工对象物W,在交流波形向0Voltage上侧上升的状态下,电子撞击加工对象物W。
在图5中,以双向电压电源与原来的波形形态时相比移动(Shift)了20%的情况为例而说明。
从而,如图6所示,蚀刻而从所述加工对象物W的表面脱落并向阳极部120侧掉落的原子a到达至阳极部120的时间充分,因此能够防止再沉积(redeposition)现象。
此时,所述直流电压电源施加部160给所述阳极部120施加的直流电压电源是,所述双向电压电源供给部130给所述阴极部110施加到双向电压电源的最大电压的1~200%。
另一方面,如图2及图3所示,所述阴极部110包括第一导体(conductor)112、第二导体114以及阴极绝缘体116。
所述第一导体112配置于最上侧,并由能够接地的金属等的导体形成。
所述第二导体114配置于所述第一导体112的下侧,并从所述双向电压电源供给部130施加有低频的交流电源,而且由铝(Al)等的导电性金属形成。
此外,所述阴极绝缘体116配置于所述第一导体112和第二导体114之间及所述第二导体114的外侧缘,以使第二导体114与外部成绝缘。
如果能够起到绝缘体的作用的话,所述阴极绝缘体116的材质为任何材质也无妨,可是设置于作为与所述加工对象物W接触的面的下侧面的薄的绝缘体118为氧化铝(Al2O3)等的氧化物或者氮化铝(AlN)等的氮化物的绝缘体。
此时,与加工对象物接触的绝缘体118利用一体型涂装技术或者使用导热性优异的粘合材的粘合技术而与施加双向电压电源的部分接合。从而将所产生的热量迅速向冷却部释放而能够顺畅地进行温度的控制。而且,所述绝缘体118对所述阴极部110的容量(capacity)的增加起到贡献。这种绝缘体118的厚度为3mm以下,但本发明并不会被绝缘体118的厚度所限定。
从而,由于绝缘而电流不会流向与所述阴极部110接触的加工对象物W,因此能够防止加工对象物W的温度上升。
此外,进一步包括用于调节所述阴极部110的温度的温度控制部170。
将与所述阴极部110接触的加工对象物的温度维持在加工温度区间内的构成要素。
此时,加工温度区间是指,根据加工对象物的材质及加工的种类等而能够获得良质的加工结果的加工工艺中的维持温度的范围。
即,在加工中维持能够实现顺畅的加工的温度而能够维持加工对象物的最佳的加工结果。
所述温度控制部170包括冷却通道172、冷媒循环部174及温度测定部176。
所述冷却通道172呈管状并形成于第二导体114的内部,管的内部流动冷却水。在本实施例中,从所述第一导体112的表面向下侧延伸至所述第二导体114的内侧,并在所述第二导体114的内部水平延伸而对所述第一导体112和第二导体114进行冷却。
而且,所述冷媒循环部174使冷却水在所述冷却通道172的内部循环。
而且,所述温度测定部176对所述第二导体114的温度进行测定。
从而,当驱动所述冷媒循环部174而温度上升时,另外设置的控制部190控制所述冷媒循环部174而使所述冷却水的循环量增多,以使所述温度测定部176所测定的温度不超出所设定的温度范围的上限值。
或者,所述控制部190控制冷媒循环部174而控制冷却水的循环量,以使所述温度测定部176所测定的温度不超出所设定的温度范围的下限值。
从而,具有所述温度控制部170控制所述阴极部110的温度的同时,控制与所述阴极部110接触的加工对象物的温度的效果。
下面,说明对上述的干式蚀刻装置进行控制的干式蚀刻装置的控制方法。
如图7所示,本实施例的干式蚀刻装置的控制方法包括:加工对象物放置步骤S110、距离调节步骤S120、双向电压电源施加步骤S130、直流施加步骤S140、蚀刻步骤S150以及温度调节步骤S160。
所述加工对象物放置步骤S110为在所述干式蚀刻装置的外壳的内侧将加工对象物W紧贴于所述阴极部110的下侧面而放置的步骤。此时,所述加工对象物W的欲蚀刻的面面向位于下侧的阳极部120。
从而,对所述加工对象物W的下侧面进行蚀刻,据此蚀刻而从所述加工对象物W的表面脱落的原子a在重力作用下向阳极部120侧掉落,从而能够防止脱落的原子再次沉积于加工对象物W的表面的再沉积(reseposition)现象。
此时,所述加工对象物W被夹住于所述载置部140和阴极部110之间而固定。
所述距离调节步骤S120为调节所述阴极部110和阳极部120之间的距离而在具有最佳的电子量的状态下进行等离子蚀刻加工的步骤。
在此步骤中,利用另外设置的控制部190而使所述马达152旋转,据此所述支撑棒156进行升降,所述阴极部110跟着升降而调节与所述阳极部120之间的距离。
此时,所述阴极部110和所述阳极部120之间的距离为3mm~50mm之间。
从而,以多种多样的形状和面积的加工对象物W作为对象而进行加工时,也能够调节成最佳的距离而以最佳的电荷量进行蚀刻加工。
所述双向电压电源施加步骤S130为给所述阴极部110施加双向电压电源的步骤。
此时,施加于所述阴极部110的双向电压电源的频率低于1MHz。
如此,通过施加比较低频带的双向电压电源的来使电荷积蓄时间变长,这对鞘区的扩大起到贡献。此外,确保离子向加工对象物侧加速的时间而能够用更高能量的等离子撞击加工对象物W的表面。
施加所述双向电压电源时,所述外壳的内部可以为充填有氩气(Ar)等的气体的状态。
而且,所述直流施加步骤S140为能够与所述双向电压电源施加步骤S130一同进行,并给所述阳极部120施加-侧或+侧的直流的步骤。在本实施例中,以施加直流的-侧为例而进行说明,但本发明并不一定限定于此。
如图5所示,给所述阳极部120施加直流时形成于阴极部110和阳极部120之间的双向电压电源的波形整体向+侧移动,从而对所述加工对象物W的离子的撞击(hitting)时间变长,电子的撞击(hitting)时间变短。据此,如图6所示,蚀刻而从所述加工对象物W的表面脱落并向阳极部120侧掉落的原子a到达至阳极部120的时间充分,因此能够防止再沉积(redeposition)现象。
此时,所述直流电压电源施加部160给所述阳极部120施加的直流是,所述双向电压电源供给部130给所述阴极部110施加的交流电压的最大电压的1~200%。
进行所述双向电压电源施加步骤S130和直流施加步骤S140时,也能够进行对加工对象物W进行蚀刻的蚀刻步骤S150。
另一方面,进行所述蚀刻步骤S150的过程中,还可进行温度控制步骤S160。在所述温度控制步骤S160中,当驱动所述冷媒循环部174而温度上升时,另外设置的控制部190控制所述冷媒循环部174而使所述冷却水的循环量增多,以使所述温度测定部176所测定的温度不超出所设定的温度范围。
此外,对所述冷媒循环部174另外设置加热器(未图示)的话,当所述温度测定部176所测定的温度低于预设的温度范围的下限值时,对所述冷媒循环部进行加热而对加工对象物进行加热。
从而,具有所述温度控制部170控制所述阴极部110的温度的同时,控制与所述阴极部110接触的加工对象物W的温度的效果。
图8为示出利用本发明的一实施例的干式蚀刻装置及其控制方法而蚀刻半导体上的铜(Cu)的过程的图。
如图8所示,对硅材10上均匀地沉积了铜(Cu)层46的加工对象物W实施平板印刷过程而形成光刻胶层30之后,利用上述的本实施例的干式蚀刻装置100而进行蚀刻的话,除了涂覆有在平板印刷过程中形成的光刻胶(PR:30)以外的部分的剩余部分全部被蚀刻。之后,去除PR30而结束整个工艺。
这与背景技术中所述的现有的干式蚀刻过程相比,显著减少了步骤数。
另一方面,图9为利用了现有的湿式蚀刻法而被蚀刻部分的截面和利用本发明的一实施例的干式蚀刻装置及其控制方法而被蚀刻部分的截面相比较的图。
如图9(a)所示,现有的湿式蚀刻法具有向所有方向均等蚀刻的各向同性的特性,因此对光刻胶以下的侧面与光刻胶的膜厚相当的量进行蚀刻而被时刻部分呈下面部分厚且越往上走变窄的抛物线的形态。但是如图9(b)所示,利用本发明的干式蚀刻装置及其控制方法的蚀刻方法具有各向异性的特性,因此被时刻部分的截面能够形成为上面部分和下面部分具有相同宽度的整洁的轮廓(profile)。
基于如上的本发明的优选实施例,除了上述的实施例以外,在不脱离本发明的要旨的范围内能够实现其他的特定形态,这对本领域的普通技术人员来说是显而易见的。因此,上述的实施例并非是限定性的例子,而是示例性的例子,据此,本发明并不限定于上述的内容,在所附的权利要求的范围及其等同的范围内能够进行变更。
Claims (7)
1.一种干式蚀刻装置的控制方法,其特征在于,包括:
以使得加工对象物的需要进行蚀刻的表面面向下侧的形式将加工对象物紧贴于阴极部的面向位于阴极部下侧的阳极部的面的加工对象物放置步骤;
将随着时间而极性为阳的电压和阴的电压交替的电压施加给阴极部的双向电压电源施加步骤;
利用在施加于所述阴极部的双向电压电源的作用下产生的等离子而对加工对象物进行蚀刻的蚀刻步骤;
所述双向电压电源为与波形的形态及大小无关地以电压为0的点为基准随着时间而电压的极性交替成+和-的电压;
另一方面,当所述双向电压的波形表现出梯形形态的双极(bipolar)波形时,电压的波形包括升压区间(U)和降压区间(D);
此时,在所述电压的波形中,将向+或-侧发散的区间称之为升压区间(U),将向0收拢的区间称之为降压区间(D);
此外,将在所述升压区间(U)和降压区间(D)维持规定的电压的区间称之为维持区间(D);
根据从所述双向电压电源供给部提供的双向电压的波形,所述维持区间(D)有可能出现,也有可能不会出现;
所述阳极部(220)的下侧设置有能够接地的基部(222),所述基部(222)的上侧设置有阳极部(220),而且所述基部(222)和阳极部(220)之间设置绝缘的第二阳极绝缘体(224);
蚀刻而从所述加工对象物W的表面脱落并向阳极部(120)侧掉落的原子a中的一部分遇到朝向所述加工对象物W的表面的离子i或等离子而与其撞击,从而再次朝向加工对象物W的表面而发生再沉积于加工对象物W的表面的再沉积现象;
干式蚀刻装置进一步包括直流电源施加部(160),其将直流电压电源的直流的-侧或+侧施加给所述阳极部(120),以使对所述加工对象物W的离子的撞击时间变短,电子的撞击时间变长;
所述阴极部(110)包括第一导体(112)、第二导体(114)以及阴极绝缘体(116);
所述第一导体(112)配置于最上侧,并由能够接地的金属等的导体形成;
所述第二导体(114)配置于所述第一导体(112)的下侧,并从所述双向电压电源供给部(130)施加有低频的交流电源,而且由铝Al等的导电性金属形成;
所述阴极绝缘体(116)配置于所述第一导体(112)和第二导体(114)之间及所述第二导体(114)的外侧缘,以使第二导体(114)与外部成绝缘;所述阴极绝缘体(116)的材质为任何材质,设置于作为与所述加工对象物W接触的面的下侧面的薄的绝缘体(118)为氧化铝(Al2O3)等的氧化物或者氮化铝(AlN)等的氮化物的绝缘体;与加工对象物接触的绝缘体(118)利用一体型涂装技术或者使用导热性优异的粘合材的粘合技术而与施加双向电压电源的部分接合;所述绝缘体(118)对所述阴极部(110)的容量的增加起到贡献;这种绝缘体(118)的厚度为3mm以下,并不会被绝缘体(118)的厚度所限定。
2.根据权利要求1所述的干式蚀刻装置的控制方法,其特征在于,
施加于所述阴极部的低频交流电源的频率低于1MHz。
3.根据权利要求1所述的干式蚀刻装置的控制方法,其特征在于,
所述加工对象物放置步骤和双向电压电源施加步骤之间,进一步包括:
调节阴极部和阳极部之间的距离的距离调节步骤。
4.根据权利要求3所述的干式蚀刻装置的控制方法,其特征在于,
被间隔调节部调节的所述阴极部和阳极部之间的距离为3mm~50mm。
5.根据权利要求1所述的干式蚀刻装置的控制方法,其特征在于,
所述双向电压电源施加步骤之后或同时,进一步包括:
给所述阳极部施加直流电压电源的直流电压电源施加步骤。
6.根据权利要求5所述的干式蚀刻装置的控制方法,其特征在于,
在所述直流电压电源施加步骤中给所述阳极部施加的直流电压是,在所述双向电压步骤中给所述阴极部施加的交流电压的最大电压的1~200%。
7.根据权利要求1所述的干式蚀刻装置的控制方法,其特征在于,
进一步包括用于控制所述阴极部的温度的温度控制步骤。
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